公开(公告)号：US20080170005A1

公开(公告)日：2008-07-17

申请号：US11832307

申请日：2007-08-01

申请人： Mitsuaki Osame ,  Aya Anzai ,  Jun Koyama ,  Makoto Udagawa ,  Masahiko Hayakawa ,  Shunpei Yamazaki

发明人： Mitsuaki Osame ,  Aya Anzai ,  Jun Koyama ,  Makoto Udagawa ,  Masahiko Hayakawa ,  Shunpei Yamazaki

IPC分类号： G09G3/30

CPC分类号： H01L33/08 ,  G09G3/3233 ,  G09G2300/0426 ,  G09G2300/0842 ,  G09G2310/0254 ,  G09G2320/043 ,  H01L27/3211 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A-light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. A large holding capacitor Cs is not provided in the pixel portion but, instead, the channel length and the channel width of the driving TFTs are increased, and the channel capacitance is utilized as Cs. The channel length is selected to be very larger than the channel width to improve current characteristics in the saturated region, and a high VGS is applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT. In the case of the 3-transistor pixels, the switching TFT and the erasing TFT are linearly arranged to further increase the aperture ratio.

摘要翻译： 实现高开口率并且图像质量几乎不受TFT的特性变化影响的A发光器件。 在像素部分中不设置大的保持电容器Cs，而是增加了沟道长度和沟道宽度，并且将沟道电容用作Cs。 通道长度选择为非常大于沟道宽度以改善饱和区域中的电流特性，并且向驱动TFT施加高V S GS以获得所需的漏极电流。 因此，驱动TFT的漏极电流几乎不受阈值电压的变化的影响。 此外，在布置像素时，布线布置在分隔壁下方，并且驱动TFT布置在布线下方，以避免开口率的降低，尽管驱动TFT的尺寸增加。 在3晶体管像素的情况下，开关TFT和擦除TFT被线性布置以进一步增加开口率。

公开(公告)号：US07173282B2

公开(公告)日：2007-02-06

申请号：US10857356

申请日：2004-06-01

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

IPC分类号： H01L29/04 ,  H01L31/036

CPC分类号： H01L29/66757 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L21/28158 ,  H01L21/3221 ,  H01L21/3226 ,  H01L29/04 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675

摘要： Nickel is selectively held in contact with a particular region of an amorphous silicon film. Crystal growth parallel with a substrate is effected by performing a heat treatment. A thermal oxidation film is formed by performing a heat treatment in an oxidizing atmosphere containing a halogen element. During this step, the crystallinity is improved and the gettering of nickel elements proceeds. A thin-film transistor is formed so that the direction connecting source and drain regions coincides with the above crystal growth direction. As a result, a TFT having superior characteristics such as a mobility larger than 200 cm2/Vs and an S value smaller than 100 mV/dec. can be obtained.

摘要翻译： 镍选择性地保持与非晶硅膜的特定区域接触。 通过进行热处理来实现与基板平行的晶体生长。 通过在含有卤素元素的氧化气氛中进行热处理而形成热氧化膜。 在此步骤中，结晶度得到改善，并且镍元素的吸除进行。 形成薄膜晶体管，使得连接源极和漏极区域的方向与上述晶体生长方向一致。 结果，具有诸如迁移率大于200cm 2 / Vs的优异特性和小于100mV / dec的S值的TFT。 可以获得。

公开(公告)号：US07037811B1

公开(公告)日：2006-05-02

申请号：US09699466

申请日：2000-10-31

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/2026 ,  H01L21/3226 ,  H01L27/1203 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/0657 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675

摘要： Concentration of metal element which promotes crystallization of silicon and which exists within a crystalline silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is performed after introducing nickel to an amorphous silicon film 103. Then, laser light is irradiated to diffuse nickel element which is concentrated locally. After that, another heat treatment is performed within an oxidizing atmosphere at a temperature higher than that of the previous heat treatment. At this time, HCl or the like is added to the atmosphere. A thermal oxide film 106 is formed in this step. At this time, gettering of the nickel element into the thermal oxide film 106 takes place. Then, the thermal oxide film 106 is removed. Thereby, a crystalline silicon film 107 having low concentration of the metal element and a high crystallinity can be obtained.

公开(公告)号：US20050231122A1

公开(公告)日：2005-10-20

申请号：US11147317

申请日：2005-06-08

申请人： Mitsuaki Osame ,  Aya Anzai ,  Jun Koyama ,  Makoto Udagawa ,  Masahiko Hayakawa ,  Shunpei Yamazaki

发明人： Mitsuaki Osame ,  Aya Anzai ,  Jun Koyama ,  Makoto Udagawa ,  Masahiko Hayakawa ,  Shunpei Yamazaki

IPC分类号： G09G3/32 ,  H01L27/32 ,  G09G3/10 ,  G09G3/36

CPC分类号： H01L33/08 ,  G09G3/3233 ,  G09G2300/0426 ,  G09G2300/0842 ,  G09G2310/0254 ,  G09G2320/043 ,  H01L27/3211 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. A large holding capacitor Cs is not provided in the pixel portion but, instead, the channel length and the channel width of the driving TFTs are increased, and the channel capacitance is utilized as Cs. The channel length is selected to be very larger than the channel width to improve current characteristics in the saturated region, and a high VGS is applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT. In the case of the 3-transistor pixels, the switching TFT and the erasing TFT are linearly arranged to further increase the aperture ratio.

公开(公告)号：US20050056843A1

公开(公告)日：2005-03-17

申请号：US10857356

申请日：2004-06-01

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/28 ,  H01L21/322 ,  H01L21/324 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/49 ,  H01L29/786 ,  H01L29/10

CPC分类号： H01L29/66757 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L21/28158 ,  H01L21/3221 ,  H01L21/3226 ,  H01L29/04 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675

摘要： Nickel is selectively held in contact with a particular region of an amorphous silicon film. Crystal growth parallel with a substrate is effected by performing a heat treatment. A thermal oxidation film is formed by performing a heat treatment in an oxidizing atmosphere containing a halogen element. During this step, the crystallinity is improved and the gettering of nickel elements proceeds. A thin-film transistor is formed so that the direction connecting source and drain regions coincides with the above crystal growth direction. As a result, a TFT having superior characteristics such as a mobility larger than 200 cm2/Vs and an S value smaller than 100 mV/dec. can be obtained.

摘要翻译： 镍选择性地保持与非晶硅膜的特定区域接触。 通过进行热处理来实现与基板平行的晶体生长。 通过在含有卤素元素的氧化气氛中进行热处理而形成热氧化膜。 在此步骤中，结晶度得到改善，并且镍元素的吸除进行。 形成薄膜晶体管，使得连接源极和漏极区域的方向与上述晶体生长方向一致。 结果，具有诸如迁移率大于200cm 2 / Vs和S值小于100mV / dec的优异特性的TFT。 可以获得。

公开(公告)号：US06465287B1

公开(公告)日：2002-10-15

申请号：US08784292

申请日：1997-01-16

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame

IPC分类号： H01L2184

CPC分类号： H01L21/02672 ,  H01L21/2022 ,  H01L21/3226 ,  H01L27/12 ,  H01L27/1203 ,  H01L27/1277 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675

摘要： Concentration of metal element which promotes crystallization of silicon and which exists within a crystalline silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is performed in temperature above 750° C. after introducing elemental nickel to an amorphous silicon film 103 disposed on a quartz substrate 101. Then, after obtaining the crystalline silicon film 105, it is patterned to obtain a pattern 106. Then, another heat treatment is performed within an oxidizing atmosphere at a temperature higher than that of the previous heat treatment. A thermal oxide film 107 is formed in this step. At this time, the elemental nickel is gettered to the thermal oxide film 107. Next, the thermal oxide film 107 is removed. Thereby, a crystalline silicon film 106 having low concentration of the metal element and a high crystallinity can be obtained.

摘要翻译： 通过利用金属元素获得的结晶硅膜中存在促进硅结晶的金属元素的浓度降低。 在将元素镍引入设置在石英衬底101上的非晶硅膜103之后，在750℃以上的温度下进行第一次结晶热处理。然后，在获得晶体硅膜105之后，对其进行图案化以获得图案106 然后，在比以前的热处理温度高的氧化气氛中进行另一热处理。 在该步骤中形成热氧化膜107。 此时，元素镍被吸收到热氧化膜107上。接下来，去除热氧化膜107。 由此，可以得到金属元素浓度低，结晶性高的结晶硅膜106。

公开(公告)号：US07834355B2

公开(公告)日：2010-11-16

申请号：US12348574

申请日：2009-01-05

申请人： Masahiko Hayakawa ,  Yu Yamazaki ,  Yukari Ando ,  Keisuke Miyagawa ,  Jun Koyama ,  Mitsuaki Osame ,  Aya Anzai ,  Shunpei Yamazaki ,  Satoshi Seo ,  Hiroko Abe

发明人： Masahiko Hayakawa ,  Yu Yamazaki ,  Yukari Ando ,  Keisuke Miyagawa ,  Jun Koyama ,  Mitsuaki Osame ,  Aya Anzai ,  Shunpei Yamazaki ,  Satoshi Seo ,  Hiroko Abe

IPC分类号： H01L29/04

CPC分类号： G09G3/3233 ,  G09G3/006 ,  G09G2300/08 ,  G09G2300/0842 ,  G09G2310/0256 ,  G09G2310/0275 ,  G09G2310/061 ,  G09G2320/029 ,  G09G2320/041 ,  G09G2320/043 ,  G09G2330/02 ,  G09G2330/12 ,  H01L27/3244 ,  H01L2251/5323

摘要： A display device where the influence of variations in current of the light emitting element due to changes in ambient temperature and changes with time can be suppressed. The display device of the invention has a light emitting element, a driving transistor connected in series to the light emitting element, a monitoring light emitting element, a limiter transistor connected in series to the monitoring light emitting element, a constant current source for supplying a constant current to the monitoring light emitting element, and a circuit for outputting a potential equal to an inputted potential. A first electrode of the light emitting element is connected to an output terminal of the circuit through the driving transistor, and a first electrode of the monitoring light emitting element is connected to an input terminal of the circuit through the limiter transistor. The channel length L1 and the channel width W1 of the driving transistor, and the channel length L2 and the channel width W2 of the limiter transistor satisfy L1/W1:L2/W2=1:2 to 1:10.

摘要翻译： 可以抑制由于环境温度的变化而随着时间的变化而影响发光元件的电流的变化的显示装置。 本发明的显示装置具有发光元件，与发光元件串联连接的驱动晶体管，监视发光元件，与监视发光元件串联连接的限幅晶体管，用于供给 到监视发光元件的恒定电流，以及用于输出等于输入电位的电位的电路。 发光元件的第一电极通过驱动晶体管连接到电路的输出端，并且监控发光元件的第一电极通过限幅晶体管连接到电路的输入端。 驱动晶体管的沟道长度L1和沟道宽度W1以及限制晶体管的沟道长度L2和沟道宽度W2满足L1 / W1：L2 / W2 = 1:2至1:10。

公开(公告)号：US07422630B2

公开(公告)日：2008-09-09

申请号：US11446135

申请日：2006-06-05

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame

IPC分类号： C30B25/02

CPC分类号： H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02675 ,  H01L21/3221 ,  H01L27/12 ,  H01L27/1277

摘要： Concentration of metal element which promotes crystallization of silicon and which exists within a crystal silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is implemented after introducing nickel to an amorphous silicon film 103. Then, laser light is irradiated to diffuse the nickel element concentrated locally. After that, another heat treatment is implemented within an oxidizing atmosphere at a temperature higher than that of the previous heat treatment. A thermal oxide film 106 is formed in this step. At this time, the nickel element is gettered to the thermal oxide film 106. Then, the thermal oxide film 106 is removed. Thereby, a crystal silicon film 107 having low concentration of the metal element and a high crystallinity can be obtained.

摘要翻译： 通过利用金属元素获得的晶体硅膜中存在促进硅结晶的金属元素的浓度降低。 在将镍引入非晶硅膜103之后，首先进行结晶热处理。 然后，照射激光以使局部浓缩的镍元素扩散。 之后，在比之前的热处理温度高的氧化气氛中进行另一次热处理。 在该步骤中形成热氧化膜106。 此时，镍元素被吸收到热氧化膜106上。 然后，去除热氧化膜106。 由此，可以得到金属元素浓度低，结晶性高的结晶硅膜107。

公开(公告)号：US07262556B2

公开(公告)日：2007-08-28

申请号：US11147317

申请日：2005-06-08

申请人： Mitsuaki Osame ,  Aya Anzai ,  Jun Koyama ,  Makoto Udagawa ,  Masahiko Hayakawa ,  Shunpei Yamazaki

发明人： Mitsuaki Osame ,  Aya Anzai ,  Jun Koyama ,  Makoto Udagawa ,  Masahiko Hayakawa ,  Shunpei Yamazaki

IPC分类号： G09G3/10

CPC分类号： H01L33/08 ,  G09G3/3233 ,  G09G2300/0426 ,  G09G2300/0842 ,  G09G2310/0254 ,  G09G2320/043 ,  H01L27/3211 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. A large holding capacitor Cs is not provided in the pixel portion but, instead, the channel length and the channel width of the driving TFTs are increased, and the channel capacitance is utilized as Cs. The channel length is selected to be very larger than the channel width to improve current characteristics in the saturated region, and a high VGS is applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT. In the case of the 3-transistor pixels, the switching TFT and the erasing TFT are linearly arranged to further increase the aperture ratio.

摘要翻译： 实现高开口率并且图像质量几乎不受TFT的特性变化影响的发光器件。 在像素部分中不设置大的保持电容器Cs，而是增加了沟道长度和沟道宽度，并且将沟道电容用作Cs。 通道长度选择为非常大于沟道宽度以改善饱和区域中的电流特性，并且向驱动TFT施加高V S GS以获得所需的漏极电流。 因此，驱动TFT的漏极电流几乎不受阈值电压的变化的影响。 此外，在布置像素时，布线布置在分隔壁下方，并且驱动TFT布置在布线下方，以避免开口率的降低，尽管驱动TFT的尺寸增加。 在3晶体管像素的情况下，开关TFT和擦除TFT被线性布置以进一步增加开口率。

公开(公告)号：US20070176176A1

公开(公告)日：2007-08-02

申请号：US10453940

申请日：2003-06-04

申请人： Shunpei Yamazaki ,  Masahiko Hayakawa ,  Yoshifumi Tanada ,  Mitsuaki Osame ,  Aya Anzai ,  Ryota Fukumoto

发明人： Shunpei Yamazaki ,  Masahiko Hayakawa ,  Yoshifumi Tanada ,  Mitsuaki Osame ,  Aya Anzai ,  Ryota Fukumoto

IPC分类号： H01L29/04

CPC分类号： H01L27/3262 ,  G09G3/3233 ,  G09G2310/0251 ,  G09G2330/04 ,  H01L27/0248 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/78675

摘要： Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

摘要翻译： 半导体元件由于静电放电损坏而劣化或被破坏。 本发明提供一种其中在每个像素中形成保护装置的半导体器件。 保护装置设置有从由电阻元件，电容器元件和整流元件组成的组中选择的一个或多个元件。 通过在发光元件的像素电极和源电极之间设置保护装置，可以减轻由于在像素电极中积聚的电荷导致的晶体管的源电极或漏电极的电位的突然变化，或 晶体管的漏极。 因此防止了由于静电放电损坏导致的半导体元件的劣化或破坏。