Method for manufacturing semiconductor device
    43.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US07229862B2

    公开(公告)日:2007-06-12

    申请号:US10885636

    申请日:2004-07-08

    IPC分类号: H01L21/84

    摘要: An object of the present invention is to provide a method for manufacturing a semiconductor device of which manufacturing process is simplified by improving usage rate of a material. A method for manufacturing a semiconductor device of the invention comprises the steps of: forming gate electrodes with a droplet discharge method on a substrate having an insulating surface; laminating gate insulating layers, semiconductor layers, and a semiconductor layer containing one-conductivity type impurity over the gate electrodes; forming first conductive layers serving as masks with a droplet discharge method in a position overlapping the gate electrodes, etching the semiconductor layer and the semiconductor layer containing one-conductivity type impurity with the first conductive layers, forming a second conductive layer serving as a source wiring or a drain wiring with a droplet discharge method over the first conductive layers; and etching the first conductive layers and the semiconductor layer containing one-conductivity type impurity, using the second conductive layers as masks.

    摘要翻译: 本发明的目的是提供一种通过提高材料的使用率来简化制造工艺的半导体器件的制造方法。 本发明的半导体器件的制造方法包括以下步骤:在具有绝缘表面的基板上形成具有液滴喷射法的栅电极; 在栅电极上层叠栅绝缘层,半导体层和含有一导电型杂质的半导体层; 在与栅电极重叠的位置处形成用作液滴喷射法的掩模的第一导电层,用第一导电层蚀刻半导体层和含有一导电型杂质的半导体层,形成用作源极布线的第二导电层 或在第一导电层上具有液滴喷射方法的漏极布线; 并且使用第二导电层作为掩模来蚀刻第一导电层和含有一种导电型杂质的半导体层。

    Liquid crystal display device and manufacturing method thereof
    46.
    发明申请
    Liquid crystal display device and manufacturing method thereof 有权
    液晶显示装置及其制造方法

    公开(公告)号:US20070040971A1

    公开(公告)日:2007-02-22

    申请号:US10577058

    申请日:2004-11-05

    IPC分类号: G02F1/1333 G02F1/136

    摘要: By using one photo mask in the manufacturing steps of a liquid crystal display device, steps such as resist coating, prebaking, exposure, development, and postbaking, as well as the formation of a covering film, etching, resist peeling, rinsing, drying and the like before and after the aforementioned steps are required, which make the process complicated. To solve the problem, a channel-etch type bottom gate TFT (inverted staggered TFT) is employed to pattern source and drain regions and a pixel electrode with the same mask. Moreover, according to the invention, among the patterns required to form a liquid crystal display device such as a conductive layer for a wiring layer or an electrode, a mask for forming a predetermined pattern and the like, at least one or more of them is formed by a method by which a pattern can selectively be formed, thereby manufacturing a liquid crystal display device.

    摘要翻译: 通过在液晶显示装置的制造步骤中使用一个光掩模,诸如抗蚀涂层,预烘烤,曝光,显影和后烘烤之类的步骤,以及形成覆盖膜,蚀刻,抗蚀剂剥离,漂洗,干燥和 需要上述步骤之前和之后,这使得该过程变得复杂。 为了解决这个问题,采用沟道蚀刻型底栅TFT(反交错TFT)来对源极和漏极区域以及具有相同掩模的像素电极进行图案化。 此外,根据本发明,形成布线层或电极用导电层等液晶显示装置所需的图案,形成规定图案的掩模等,其中至少一个或多个是 通过可以选择性地形成图案的方法形成,从而制造液晶显示装置。