-
公开(公告)号：US20050053720A1
公开(公告)日：2005-03-10
申请号：US10894434
申请日：2004-07-20
申请人： Shunpei Yamazaki , Keitaro Imai , Shinji Maekawa , Makoto Furuno , Osamu Nakamura , Masakazu Murakami
发明人： Shunpei Yamazaki , Keitaro Imai , Shinji Maekawa , Makoto Furuno , Osamu Nakamura , Masakazu Murakami
CPC分类号： H01L51/56 , H01L27/3244
摘要： The present invention provides an active matrix substrate which can be fabricated at a lower cost and a light emitting device having a large display area fabricated by a vapor deposition system which makes a film with uniform thickness for a large substrate. According to the invention, an organic light-emitting device can be fabricated by performing vapor deposition toward a large substrate provided with a pixel portion (and a driver circuit) including an n-channel TFT having a amorphous silicon film, semi-amorphous semiconductor film or an organic semiconductor film as an active layer.
摘要翻译： 本发明提供了一种能够以较低成本制造的有源矩阵基板和具有由气相沉积系统制造的具有大的显示面积的发光器件，该气相沉积系统制造了具有均匀厚度的薄膜用于大基片。 根据本发明，可以通过向具有包括具有非晶硅膜，半非晶半导体膜的n沟道TFT的像素部分（和驱动电路）的大型衬底进行气相沉积来制造有机发光器件 或有机半导体膜作为活性层。
-
2.发明授权Manufacturing method of a light emitting device including moving the source of the vapor deposition parallel to the substrate 有权一种发光器件的制造方法，包括使所述气相沉积源平行于所述衬底移动公开(公告)号：US07211454B2
公开(公告)日：2007-05-01
申请号：US10894434
申请日：2004-07-20
申请人： Shunpei Yamazaki , Keitaro Imai , Shinji Maekawa , Makoto Furuno , Osamu Nakamura , Masakazu Murakami
发明人： Shunpei Yamazaki , Keitaro Imai , Shinji Maekawa , Makoto Furuno , Osamu Nakamura , Masakazu Murakami
CPC分类号： H01L51/56 , H01L27/3244
摘要： The present invention provides an active matrix substrate which can be fabricated at a lower cost and a light emitting device having a large display area fabricated by a vapor deposition system which makes a film with uniform thickness for a large substrate. According to the invention, an organic light-emitting device can be fabricated by performing vapor deposition toward a large substrate provided with a pixel portion (and a driver circuit) including an n-channel TFT having a amorphous silicon film, semi-amorphous semiconductor film or an organic semiconductor film as an active layer.
摘要翻译： 本发明提供了一种能够以较低成本制造的有源矩阵基板和具有由气相沉积系统制造的具有大的显示面积的发光器件，该气相沉积系统制造了具有均匀厚度的薄膜用于大基片。 根据本发明，可以通过向具有包括具有非晶硅膜，半非晶半导体膜的n沟道TFT的像素部分（和驱动电路）的大型衬底进行气相沉积来制造有机发光器件 或有机半导体膜作为活性层。
-
公开(公告)号：US20050014319A1
公开(公告)日：2005-01-20
申请号：US10885636
申请日：2004-07-08
IPC分类号： H01L29/786 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/423 , H01L21/00 , H01L21/8234
CPC分类号： H01L27/12 , H01L27/1292 , H01L29/42384 , H01L29/66765
摘要： An object of the present invention is to provide a method for manufacturing a semiconductor device of which manufacturing process is simplified by improving usage rate of a material. A method for manufacturing a semiconductor device of the invention comprises the steps of: forming gate electrodes with a droplet discharge method on a substrate having an insulating surface; laminating gate insulating layers, semiconductor layers, and a semiconductor layer containing one-conductivity type impurity over the gate electrodes; forming first conductive layers serving as masks with a droplet discharge method in a position overlapping the gate electrodes, etching the semiconductor layer and the semiconductor layer containing one-conductivity type impurity with the first conductive layers, forming a second conductive layer serving as a source wiring or a drain wiring with a droplet discharge method over the first conductive layers; and etching the first conductive layers and the semiconductor layer containing one-conductivity type impurity, using the second conductive layers as masks.
摘要翻译： 本发明的目的是提供一种通过提高材料的使用率来简化制造工艺的半导体器件的制造方法。 本发明的半导体器件的制造方法包括以下步骤：在具有绝缘表面的基板上形成具有液滴喷射法的栅电极; 在栅电极上层叠栅绝缘层，半导体层和含有一导电型杂质的半导体层; 在与栅电极重叠的位置处形成用作液滴喷射法的掩模的第一导电层，用第一导电层蚀刻半导体层和含有一导电型杂质的半导体层，形成用作源极布线的第二导电层 或在第一导电层上具有液滴喷射方法的漏极布线; 并且使用第二导电层作为掩模来蚀刻第一导电层和含有一种导电型杂质的半导体层。
-
4.发明授权公开(公告)号：US07709843B2
公开(公告)日：2010-05-04
申请号：US10574880
申请日：2004-10-25
IPC分类号： H01L29/786
CPC分类号： H01L27/12 , H01L27/1292 , H01L27/3276 , H01L29/66757 , H01L29/66765 , H01L51/56
摘要： According to the present invention, which is a display device in which a light-emitting element where an organic substance generating luminescence referred to as electroluminescence or a medium including a mixture of an organic substance and an inorganic substance is sandwiched between electrodes is connected to a TFT, the invention is to manufacture a display panel by forming at least one or more of a conductive layer which forms a wiring or an electrode and a pattern necessary for manufacturing a display panel such as a mask layer for forming a predetermined pattern is formed by a method capable of selectively forming a pattern. A droplet discharge method capable of forming a predetermined pattern by selectively discharging a droplet of a composition in accordance with a particular object and by forming a conductive layer or an insulating layer is used as a method capable of selectively forming a pattern.
摘要翻译： 根据本发明，其中将发出被称为电致发光的有机物质的发光元件或包含有机物和无机物的混合物的介质夹在电极之间的发光元件连接到 TFT，本发明通过形成至少一个或多个形成布线或电极的导电层以及用于制造用于形成预定图案的掩模层等显示面板所需的图案来制造显示面板，由 能够选择性地形成图案的方法。 使用能够通过选择性地排出根据特定目的的组合物的液滴并且通过形成导电层或绝缘层来形成预定图案的液滴喷射方法作为能够选择性地形成图案的方法。
-
公开(公告)号：US20050012887A1
公开(公告)日：2005-01-20
申请号：US10884945
申请日：2004-07-07
申请人： Jun Koyama , Keitaro Imai , Shinji Maekawa , Makoto Furuno , Osamu Nakamura , Shunpei Yamazaki
发明人： Jun Koyama , Keitaro Imai , Shinji Maekawa , Makoto Furuno , Osamu Nakamura , Shunpei Yamazaki
IPC分类号： G02F1/1368 , G02F1/133 , G02F1/1362 , G09F9/00 , G09F9/30 , G09G3/20 , G09G3/30 , G09G3/36 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786 , H01L51/50 , G02F1/1345
CPC分类号： H01L27/1288 , G02F1/13454 , G02F1/13624 , G09G3/20 , G09G2300/0408 , G09G2300/08 , G09G2310/0289 , H01L27/1214 , H01L29/04 , H01L29/78669 , H01L29/78678
摘要： When semi-amorphous TFTs are used for forming a signal line driver circuit and a pixel, a large amplitude is required for driving the pixel, and a large power supply voltage is thus needed. On the other hand, when a shift register is made up of transistors having a single conductivity, a bootstrap circuit is required, and a voltage over a power supply is applied to a specific element. Therefore, not both the driving amplitude and the reliability can be achieved with a single power supply. According to the invention, a level shifter having a single conductivity is provided to solve such a problem.
摘要翻译： 当使用半非晶TFT来形成信号线驱动电路和像素时，驱动像素需要大的幅度，因此需要大的电源电压。 另一方面，当移位寄存器由具有单一导电性的晶体管构成时，需要自举电路，并且将电源上的电压施加到特定元件。 因此，不能通过单个电源实现驱动振幅和可靠性。 根据本发明，提供具有单一电导率的电平移位器来解决这个问题。
-
公开(公告)号：US08310474B2
公开(公告)日：2012-11-13
申请号：US12371936
申请日：2009-02-17
申请人： Jun Koyama , Keitaro Imai , Shinji Maekawa , Makoto Furuno , Osamu Nakamura , Shunpei Yamazaki
发明人： Jun Koyama , Keitaro Imai , Shinji Maekawa , Makoto Furuno , Osamu Nakamura , Shunpei Yamazaki
IPC分类号： G09G5/00
CPC分类号： H01L27/1288 , G02F1/13454 , G02F1/13624 , G09G3/20 , G09G2300/0408 , G09G2300/08 , G09G2310/0289 , H01L27/1214 , H01L29/04 , H01L29/78669 , H01L29/78678
摘要： When semi-amorphous TFTs are used for forming a signal line driver circuit and a pixel, a large amplitude is required for driving the pixel, and a large power supply voltage is thus needed. On the other hand, when a shift register is made up of transistors having a single conductivity, a bootstrap circuit is required, and a voltage over a power supply is applied to a specific element. Therefore, not both the driving amplitude and the reliability can be achieved with a single power supply. According to the invention, a level shifter having a single conductivity is provided to solve such a problem.
摘要翻译： 当使用半非晶TFT来形成信号线驱动电路和像素时，驱动像素需要大的幅度，因此需要大的电源电压。 另一方面，当移位寄存器由具有单一导电性的晶体管构成时，需要自举电路，并且将电源上的电压施加到特定元件。 因此，不能通过单个电源实现驱动振幅和可靠性。 根据本发明，提供具有单一电导率的电平移位器来解决这个问题。
-
公开(公告)号：US07572688B2
公开(公告)日：2009-08-11
申请号：US11797533
申请日：2007-05-04
CPC分类号： H01L27/12 , H01L27/1292 , H01L29/42384 , H01L29/66765
摘要： An object of the present invention is to provide a method for manufacturing a semiconductor device of which manufacturing process is simplified by improving usage rate of a material. A method for manufacturing a semiconductor device of the invention comprises the steps of: forming gate electrodes with a droplet discharge method on a substrate having an insulating surface; laminating gate insulating layers, semiconductor layers, and a semiconductor layer containing one-conductivity type impurity over the gate electrodes; forming first conductive layers serving as masks with a droplet discharge method in a position overlapping the gate electrodes, etching the semiconductor layer and the semiconductor layer containing one-conductivity type impurity with the first conductive layers, forming a second conductive layer serving as a source wiring or a drain wiring with a droplet discharge method over the first conductive layers; and etching the first conductive layers and the semiconductor layer containing one-conductivity type impurity, using the second conductive layers as masks.
摘要翻译： 本发明的目的是提供一种通过提高材料的使用率来简化制造工艺的半导体器件的制造方法。 本发明的半导体器件的制造方法包括以下步骤：在具有绝缘表面的基板上形成具有液滴喷射法的栅电极; 在栅电极上层叠栅绝缘层，半导体层和含有一导电型杂质的半导体层; 在与栅电极重叠的位置处形成用作液滴喷射法的掩模的第一导电层，用第一导电层蚀刻半导体层和含有一导电型杂质的半导体层，形成用作源极布线的第二导电层 或在第一导电层上具有液滴喷射方法的漏极布线; 并且使用第二导电层作为掩模来蚀刻第一导电层和含有一种导电型杂质的半导体层。
-
公开(公告)号：US07229862B2
公开(公告)日：2007-06-12
申请号：US10885636
申请日：2004-07-08
IPC分类号： H01L21/84
CPC分类号： H01L27/12 , H01L27/1292 , H01L29/42384 , H01L29/66765
摘要： An object of the present invention is to provide a method for manufacturing a semiconductor device of which manufacturing process is simplified by improving usage rate of a material. A method for manufacturing a semiconductor device of the invention comprises the steps of: forming gate electrodes with a droplet discharge method on a substrate having an insulating surface; laminating gate insulating layers, semiconductor layers, and a semiconductor layer containing one-conductivity type impurity over the gate electrodes; forming first conductive layers serving as masks with a droplet discharge method in a position overlapping the gate electrodes, etching the semiconductor layer and the semiconductor layer containing one-conductivity type impurity with the first conductive layers, forming a second conductive layer serving as a source wiring or a drain wiring with a droplet discharge method over the first conductive layers; and etching the first conductive layers and the semiconductor layer containing one-conductivity type impurity, using the second conductive layers as masks.
摘要翻译： 本发明的目的是提供一种通过提高材料的使用率来简化制造工艺的半导体器件的制造方法。 本发明的半导体器件的制造方法包括以下步骤：在具有绝缘表面的基板上形成具有液滴喷射法的栅电极; 在栅电极上层叠栅绝缘层，半导体层和含有一导电型杂质的半导体层; 在与栅电极重叠的位置处形成用作液滴喷射法的掩模的第一导电层，用第一导电层蚀刻半导体层和含有一导电型杂质的半导体层，形成用作源极布线的第二导电层 或在第一导电层上具有液滴喷射方法的漏极布线; 并且使用第二导电层作为掩模来蚀刻第一导电层和含有一种导电型杂质的半导体层。
-
9.发明申请公开(公告)号：US20070051952A1
公开(公告)日：2007-03-08
申请号：US10574829
申请日：2004-10-25
IPC分类号： H01L29/04
CPC分类号： H01L33/08 , G02F1/1368 , G02F2001/136295 , H01L21/76838 , H01L27/12 , H01L27/1285 , H01L27/1292 , H01L29/66765 , H01L2924/0002 , Y10T428/24421 , H01L2924/00
摘要： At least one or more of a conductive layer which forms a wiring or an electrode and a pattern necessary for manufacturing a display panel such as a mask for forming a predetermined pattern is formed by a method capable of selectively forming a pattern to manufacture a liquid crystal display device. A droplet discharge method capable of forming a predetermined pattern by selectively discharging a droplet of a composition in accordance with a particular object is used as a method capable of selectively forming a pattern in forming a conductive layer, an insulating layer, or the like.
摘要翻译： 通过能够选择性地形成图案以制造液晶的方法形成至少一个或多个形成布线或电极的导电层和制造用于形成预定图案的掩模等显示面板所需的图案 显示设备。 使用能够通过根据特定目的选择性地排出组合物的液滴来形成预定图案的液滴喷射方法作为能够在形成导电层，绝缘层等中选择性地形成图案的方法。
-
公开(公告)号：US20070212828A1
公开(公告)日：2007-09-13
申请号：US11797533
申请日：2007-05-04
IPC分类号： H01L21/84
CPC分类号： H01L27/12 , H01L27/1292 , H01L29/42384 , H01L29/66765
摘要： An object of the present invention is to provide a method for manufacturing a semiconductor device of which manufacturing process is simplified by improving usage rate of a material. A method for manufacturing a semiconductor device of the invention comprises the steps of: forming gate electrodes with a droplet discharge method on a substrate having an insulating surface; laminating gate insulating layers, semiconductor layers, and a semiconductor layer containing one-conductivity type impurity over the gate electrodes; forming first conductive layers serving as masks with a droplet discharge method in a position overlapping the gate electrodes, etching the semiconductor layer and the semiconductor layer containing one-conductivity type impurity with the first conductive layers, forming a second conductive layer serving as a source wiring or a drain wiring with a droplet discharge method over the first conductive layers; and etching the first conductive layers and the semiconductor layer containing one-conductivity type impurity, using the second conductive layers as masks.
-
-
-
-
-
-
-
-
-
搜索结果
457 条记录 (耗时 0.035 秒)
