公开(公告)号：US11005035B2

公开(公告)日：2021-05-11

申请号：US16364905

申请日：2019-03-26

Applicant: TDK CORPORATION

Inventor： Tsuyoshi Suzuki ,  Katsuyuki Nakada ,  Shinto Ichikawa

IPC: H01L43/10 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetoresistive effect element includes a first ferromagnetic layer and a tunnel barrier layer. The tunnel barrier layer has a main body region and a first interface region. The main body region has an oxide material of a first spinel structure represented by a general formula LM2O4. The first interface region has at least one element X selected from a group consisting of elements having a valence of 2 and elements having a valence of 3 excluding Al and has an oxide material of a second spinel structure represented by a general formula DG2O4(D represents one or more kinds of elements including Mg or the element X, and G represents one or more kinds of elements including Al or the element X). A content of the element X contained in the first interface region is larger than that of the element X contained in the main body region.

公开(公告)号：US10944043B2

公开(公告)日：2021-03-09

申请号：US16025171

申请日：2018-07-02

Applicant: TDK CORPORATION

Inventor： Katsuyuki Nakada ,  Shinto Ichikawa

IPC: H01L29/82 ,  H01L21/00 ,  H01L43/02 ,  H01L43/12 ,  H01L43/10 ,  H01L43/08

Abstract: This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer which is interposed between the first and second ferromagnetic layers, wherein the tunnel barrier layer has a spinel structure represented by a compositional formula X1-αYαOβ, and the tunnel barrier layer contains one or more additional elements selected from the group consisting of He, Ne, Ar, Kr, Xe, P, C, B, and Si, and in the compositional formula, X represents one or more elements selected from the group consisting of Mg, Zn, Cd, Ag, Pt, and Pb, Y represents one or more elements selected from the group consisting of Al, Ga, and In, a range of α is 0

公开(公告)号：US10937951B2

公开(公告)日：2021-03-02

申请号：US15911689

申请日：2018-03-05

Applicant: TDK CORPORATION

Inventor： Katsuyuki Nakada ,  Kazuumi Inubushi

IPC: H01F10/193 ,  H01F10/32 ,  H01L43/10 ,  H01F1/00 ,  H01L43/08

Abstract: A magnetoresistance effect element according to an aspect of the present disclosure includes a first ferromagnetic layer as a magnetization fixed layer including a ferromagnetic Heusler alloy, a second ferromagnetic layer as a magnetization free layer including a ferromagnetic Heusler alloy, and a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer, and the nonmagnetic spacer layer includes a nonmagnetic Fe group, Co group, or Ni group Heusler alloy.

公开(公告)号：US10790440B2

公开(公告)日：2020-09-29

申请号：US16587178

申请日：2019-09-30

Applicant: TDK CORPORATION

Inventor： Tomoyuki Sasaki ,  Tatsuo Shibata ,  Katsuyuki Nakada ,  Yoshitomo Tanaka

IPC: H01L45/00 ,  H01L43/08 ,  H01L43/10 ,  G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L43/12 ,  G11B5/39

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.

公开(公告)号：US10784438B2

公开(公告)日：2020-09-22

申请号：US16209533

申请日：2018-12-04

Applicant: TDK CORPORATION

Inventor： Kazuumi Inubushi ,  Katsuyuki Nakada

IPC: H01L29/82 ,  H01L43/02 ,  H01L43/12 ,  H01L43/10 ,  H01L43/08

Abstract: A magnetoresistive effect element according to one aspect of the present disclosure includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer. The spacer layer is provided between the first ferromagnetic layer and the second ferromagnetic layer. The spacer layer includes an Mn alloy represented by General Formula (1). MnγX1-γ  (1) (in the Formula, X is at least one metal selected from the group consisting of Al, V, Cr, Cu, Zn, Ag, Au, an NiAl alloy, an AgMg alloy, and an AgZn alloy, and γ is 0

公开(公告)号：US10720178B2

公开(公告)日：2020-07-21

申请号：US16277045

申请日：2019-02-15

Applicant: TDK CORPORATION

Inventor： Tomoyuki Sasaki ,  Katsuyuki Nakada ,  Tatsuo Shibata

IPC: G11B5/39 ,  H01L43/08 ,  H01L43/10 ,  H01L27/105 ,  H01F10/32 ,  G11C11/16 ,  H01F10/193 ,  H01L27/22 ,  H01L29/82 ,  H01F1/40

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure represented by a composition formula AGa2Ox (0

公开(公告)号：US10665374B2

公开(公告)日：2020-05-26

申请号：US16564602

申请日：2019-09-09

Applicant: TDK CORPORATION

Inventor： Kazuumi Inubushi ,  Katsuyuki Nakada ,  Tomoyuki Sasaki

IPC: G11B5/39 ,  H01F10/32 ,  H01L43/02 ,  H03H11/04 ,  G01R33/09 ,  H03B15/00 ,  H01L43/10 ,  H01L43/08 ,  H01F10/193 ,  H03H2/00

Abstract: There is provided a magnetoresistive effect element having improved magnetoresistive effect. A magnetoresistive effect element MR includes a first ferromagnetic layer 4 as a fixed magnetization layer, a second ferromagnetic layer 6 as a free magnetization layer, and a nonmagnetic spacer layer 5 provided between the first ferromagnetic layer 4 and the second ferromagnetic layer 6. The nonmagnetic spacer layer 5 includes at least one of a first insertion layer 5A provided under the nonmagnetic spacer layer 5 and a second insertion layer 5C provided over the nonmagnetic spacer layer 5. The first insertion layer 5A and the second insertion layer 5C are made of Fe2TiSi.

公开(公告)号：US10446740B2

公开(公告)日：2019-10-15

申请号：US16364590

申请日：2019-03-26

Applicant: TDK CORPORATION

Inventor： Tomoyuki Sasaki ,  Katsuyuki Nakada ,  Tatsuo Shibata

IPC: H01L43/08 ,  H01L43/10 ,  H01L27/105 ,  H01L29/82 ,  G11B5/39 ,  G01R33/09 ,  G11C11/16 ,  H01L27/22

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure represented by a composition formula of AIn2Ox (0

公开(公告)号：US10263181B2

公开(公告)日：2019-04-16

申请号：US15994057

申请日：2018-05-31

Applicant: TDK CORPORATION

Inventor： Eiji Suzuki ,  Katsuyuki Nakada ,  Shogo Yonemura

IPC: H01L27/11585 ,  H01L27/115 ,  H01L43/08 ,  H01F10/32 ,  H01L43/10 ,  H01L21/28

Abstract: To provide a laminated structure and a spin modulation element capable of stably modulating spin polarizability of a ferromagnetic material by an electric field. A laminated structure according to an embodiment includes: a ferromagnetic layer; and a multiferroic layer formed on one surface of the ferromagnetic layer, wherein the multiferroic layer includes a first region having a rhombohedral crystal structure formed on a surface side on the ferromagnetic layer side and a second region having a tetragonal crystal structure formed further inside than the first region.

公开(公告)号：US10020445B2

公开(公告)日：2018-07-10

申请号：US15467168

申请日：2017-03-23

Applicant: TDK CORPORATION

Inventor： Kazuumi Inubushi ,  Katsuyuki Nakada

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10

CPC classification number: H01L43/08 ,  H01L43/02 ,  H01L43/10

Abstract: A magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic metal layer interposed between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer and the second ferromagnetic layer include a Heusler alloy consisting of a CoMnSi alloy. A ratio x of Mn with respect to Co2 in each of the first ferromagnetic layer and the second ferromagnetic layer is 0.7≤x≤1.7. Compositions of the first ferromagnetic layer and the second ferromagnetic layer are different from each other.