公开(公告)号：US20210408266A1

公开(公告)日：2021-12-30

申请号：US16917577

申请日：2020-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Jhe Sie ,  Chen-Huang Huang ,  Shao-Hua Hsu ,  Cheng-Chung Chang ,  Szu-Ping Lee ,  An Chyi Wei ,  Shiang-Bau Wang ,  Chia-Jen Chen

IPC: H01L29/66 ,  H01L29/78 ,  H01L27/092 ,  H01L21/8238 ,  H01L21/768

Abstract: In an embodiment, a method of forming a semiconductor device includes forming a dummy gate stack over a substrate; forming a first spacer layer over the dummy gate stack; oxidizing a surface of the first spacer layer to form a sacrificial liner; forming one or more second spacer layers over the sacrificial liner; forming a third spacer layer over the one or more second spacer layers; forming an inter-layer dielectric (ILD) layer over the third spacer layer; etching at least a portion of the one or more second spacer layers to form an air gap, the air gap being interposed between the third spacer layer and the first spacer layer; and forming a refill layer to fill an upper portion of the air gap.

公开(公告)号：US09664999B2

公开(公告)日：2017-05-30

申请号：US15245499

申请日：2016-08-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Tsung Shih ,  Tien-Hsi Lee ,  Chia-Jen Chen ,  Shang-Chieh Chien ,  Shinn-Sheng Yu ,  Jeng-Horng Chen ,  Anthony Yen

IPC: G03F1/64 ,  G03F1/62 ,  B29C71/02 ,  G03F7/20

CPC classification number: G03F1/64 ,  B29C71/02 ,  B29C2071/022 ,  G03F1/62 ,  G03F7/2002

Abstract: The present disclosure relates to an extreme ultraviolet (EUV) pellicle having a pellicle film connected to a pellicle frame. In some embodiments, the EUV pellicle has a substrate, and an adhesive material disposed onto the substrate. A pellicle frame is connected to the substrate by way of the adhesive material. The pellicle frame is configured to mount the substrate to an extreme ultraviolet (EUV) reticle.

公开(公告)号：US20160363857A1

公开(公告)日：2016-12-15

申请号：US15245499

申请日：2016-08-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Tsung Shih ,  Tien-Hsi Lee ,  Chia-Jen Chen ,  Shang-Chieh Chien ,  Shinn-Sheng Yu ,  Jeng-Horng Chen ,  Anthony Yen

IPC: G03F1/64

CPC classification number: G03F1/64 ,  B29C71/02 ,  B29C2071/022 ,  G03F1/62 ,  G03F7/2002

Abstract: The present disclosure relates to an extreme ultraviolet (EUV) pellicle having a pellicle film connected to a pellicle frame. In some embodiments, the EUV pellicle has a substrate, and an adhesive material disposed onto the substrate. A pellicle frame is connected to the substrate by way of the adhesive material. The pellicle frame is configured to mount the substrate to an extreme ultraviolet (EUV) reticle.

Abstract translation: 本发明涉及一种具有与防护薄膜组件框架连接的防护薄膜的极紫外（EUV）防护薄膜组件。 在一些实施方案中，EUV防护薄膜具有基材和设置在基材上的粘合剂材料。 防护薄膜组件框架通过粘合剂材料连接到基底。 防护薄膜框架被配置为将基板安装到极紫外（EUV）掩模版上。

公开(公告)号：US09341940B2

公开(公告)日：2016-05-17

申请号：US14278678

申请日：2014-05-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wen-Chang Hsueh ,  Chia-Jen Chen ,  Ta-Cheng Lien ,  Hsin-Chang Lee

IPC: G03F1/32

CPC classification number: G03F1/32 ,  G03F1/28

Abstract: A reticle and a method of fabricating the reticle are provided. In various embodiments, the reticle includes a substrate, a patterned first attenuating layer, a patterned second attenuating layer, and a patterned third attenuating layer. The patterned first attenuating layer is disposed on the substrate. The patterned second attenuating layer is disposed on the patterned first attenuating layer. The patterned third attenuating layer is disposed on the patterned second attenuating layer. A first part of the patterned first attenuating layer, a first part of patterned second attenuating layer, and the patterned third attenuating layer are stacked on the substrate as a binary intensity mask portion.

Abstract translation: 提供了掩模版和制作掩模版的方法。 在各种实施例中，掩模版包括衬底，图案化的第一衰减层，图案化的第二衰减层和图案化的第三衰减层。 图案化的第一衰减层设置在基板上。 图案化的第二衰减层设置在图案化的第一衰减层上。 图案化的第三衰减层设置在图案化的第二衰减层上。 图案化第一衰减层的第一部分，图案化第二衰减层的第一部分和图案化的第三衰减层作为二值强度掩模部分堆叠在基板上。

公开(公告)号：US09256123B2

公开(公告)日：2016-02-09

申请号：US14259194

申请日：2014-04-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Tsung Shih ,  Tien-Hsi Lee ,  Chia-Jen Chen ,  Shang-Chieh Chien ,  Shinn-Sheng Yu ,  Jeng-Horng Chen ,  Anthony Yen

IPC: G03F1/64 ,  G03F7/20 ,  B29C71/02

CPC classification number: G03F1/64 ,  B29C71/02 ,  B29C2071/022 ,  G03F1/62 ,  G03F7/2002

Abstract: The present disclosure relates to a method of forming an EUV pellicle having an pellicle film connected to a pellicle frame without a supportive mesh, and an associated apparatus. In some embodiments, the method is performed by forming a cleaving plane within a substrate at a position parallel to a top surface of the substrate. A pellicle frame is attached to the top surface of the substrate. The substrate is cleaved along the cleaving plane to form a pellicle film comprising a thinned substrate coupled to the pellicle frame. Prior to cleaving the substrate, the substrate is operated upon to reduce structural damage to the top surface of substrate during formation of the cleaving plane and/or during cleaving the substrate. Reducing structural damage to the top surface of the substrate improves the durability of the thinned substrate and removes a need for a support structure for the pellicle film.

Abstract translation: 本发明涉及一种形成具有连接到没有支撑网的防护薄膜框架的防护薄膜组件的EUV防护薄膜组件的方法，以及相关联的装置。 在一些实施例中，该方法通过在平行于衬底顶表面的位置处在衬底内形成切割平面来进行。 防护薄膜组件框架附接到基板的顶表面。 基底沿着切割平面切割以形成防护薄膜，该薄膜包含连接到防护薄膜框架上的薄化基底。 在切割基板之前，操作基板以在形成切割平面期间和/或在分离基板期间减少对基板顶表面的结构损伤。 降低对基板顶表面的结构损伤提高了薄板基板的耐久性，并且消除了对防护薄膜的支撑结构的需要。

公开(公告)号：US09046776B2

公开(公告)日：2015-06-02

申请号：US13758114

申请日：2013-02-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Hao Hsu ,  Chia-Chen Chen ,  Jui-Ching Wu ,  Shang-Chieh Chien ,  Chia-Jen Chen ,  Chia-Ching Huang

IPC: G03F1/22 ,  G03F1/24 ,  G03F1/00

CPC classification number: H01L21/0274 ,  G03F1/14 ,  G03F1/22 ,  G03F1/24 ,  G03F7/70283

Abstract: A reticle for use in an extreme ultraviolet (euv) lithography tool includes a trench formed in the opaque border formed around the image field of the reticle. The trench is coated with an absorber material. The reticle is used in an euv lithography tool in conjunction with a reticle mask and the positioning of the reticle mask and the presence of the trench combine to prevent any divergent beams of radiation from reaching any undesired areas on the substrate being patterned. In this manner, only the exposure field of the substrate is exposed to the euv radiation. Pattern integrity in neighboring fields is maintained.

Abstract translation: 用于极紫外（euv）光刻工具的掩模版包括形成在掩模版的图像周围形成的不透明边界中的沟槽。 沟槽涂有吸收材料。 掩模版用于与光掩模掩模结合的电子光刻工具，并且掩模版掩模的定位和沟槽的存在组合以防止任何发散的辐射束到达衬底上的任何不期望的区域被图案化。 以这种方式，只有基板的曝光场暴露于euv辐射。 保持相邻区域中的模式完整性。