公开(公告)号：US20190096753A1

公开(公告)日：2019-03-28

申请号：US16111605

申请日：2018-08-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsing-Lien Lin ,  Chii-Ming Wu ,  Hai-Dang Trinh ,  Fa-Shen Jiang

IPC: H01L21/768 ,  H01L49/02 ,  H01L43/02 ,  H01L45/00 ,  H01L23/535 ,  H01L23/532 ,  H01L21/285

Abstract: The present disclosure relates to an integrated circuit (IC) comprising an adhesion layer to enhance adhesion of an electrode. In some embodiments, the IC comprises a via dielectric layer, an adhesion layer, and a first electrode. The adhesion layer overlies the via dielectric layer, and the first electrode overlies and directly contacts the adhesion layer. The adhesion layer has a first surface energy at an interface at which the first electrode contacts the adhesion layer, and the first electrode has a second surface energy at the interface. Further, the first surface energy is greater than the second surface energy to promote adhesion. The present disclosure also relates to a method for forming the IC.

公开(公告)号：US09859129B2

公开(公告)日：2018-01-02

申请号：US15054142

申请日：2016-02-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ting-Huang Kuo ,  Chia-Pin Lo ,  Wei-Barn Chen ,  Chen-Chieh Chiang ,  Chii-Ming Wu ,  Chi-Cherng Jeng

IPC: H01L29/167 ,  H01L29/51 ,  H01L29/78 ,  H01L21/3115 ,  H01L21/8238 ,  H01L21/3105 ,  H01L21/32 ,  H01L21/02 ,  H01L27/092

CPC classification number: H01L27/0922 ,  H01L21/02134 ,  H01L21/02137 ,  H01L21/3105 ,  H01L21/823821 ,  H01L27/0924

Abstract: Semiconductor devices and manufacturing method of the same are disclosed. A semiconductor device includes a substrate, a p-type MOS transistor, an n-type MOS transistor and a cured flowable oxide layer. The substrate includes a first region and a second region. The p-type MOS transistor is in the first region. The n-type MOS transistor is in the second region. The cured flowable oxide layer covers the p-type MOS transistor and the n-type MOS transistor, wherein a first strain of the cured flowable oxide layer applying to the p-type MOS transistor is different from a second strain of the cured flowable oxide layer applying to the n-type MOS transistor, and the difference therebetween is greater than 0.002 Gpa.