公开(公告)号：US20130231786A1

公开(公告)日：2013-09-05

申请号：US13884194

申请日：2011-10-24

申请人： Takashi Noguchi

发明人： Takashi Noguchi

IPC分类号： G05D23/19

CPC分类号： G05D23/19 ,  F24F11/52 ,  G05B19/0426 ,  G05B2219/23261

摘要： An engineering device includes a template producing unit that produces a template that defines monitoring point information and control point information as information for an object that is an equipment subject to monitoring/control, a system defining unit that defines system information for each equipment of a facility that is subject to monitoring/control, a physical entity deploying unit that produces monitoring point information and control point information for each individual equipment by deploying the template, for each individual equipment within the facility, following the system information, and a modification processing unit that regenerates the monitoring point information and control point information for each individual equipment, by deploying, to each individual equipment within the facility, a post-modification template, following the system information, when a modification has been made to the template.

摘要翻译： 工程装置包括：模板生成单元，其生成将监视点信息和控制点信息定义为作为受监视/控制的设备的对象的信息的模板;系统定义单元，其定义设施的每个设备的系统信息 接受监视/控制的物理实体部署单元，根据系统信息，通过部署模板为每个单独设备生成监视点信息和控制点信息，以及设备内的每个设备，以及修改处理单元， 通过在对该模板进行修改的情况下，按照系统信息部署到设施内的每个单独的设备，再次生成每个单独设备的监视点信息和控制点信息。

公开(公告)号：US08203268B2

公开(公告)日：2012-06-19

申请号：US12550426

申请日：2009-08-31

申请人： Hideyuki Matsumoto ,  Takashi Noguchi

发明人： Hideyuki Matsumoto ,  Takashi Noguchi

IPC分类号： H01J1/62

CPC分类号： H01J61/0732

摘要： A discharge lamp configured to suppress temperature increases in the electrode on the opening part side of a reflective mirror is described. The discharge lamp includes an F electrode and an R electrode having shapes before forming the melt electrodes that satisfy at least one of the following conditions (a) to (c): (a) The diameter of the core wire of the F electrode is d1f, and the diameter of the core wire of the R electrode is d1r, then d1f>1.2×d1r; (b) The wire diameter of the coil of said F electrode is d2f, and the wire diameter of the coil of the R electrode is d2r, then d2f>1.2×d2r; (c) the number of windings of the coil of the F electrode is nf, and the number of windings of the coil of the R electrode is nr, then nf>1.2×nr.

摘要翻译： 描述了构造成抑制反射镜的开口部侧的电极的温度升高的放电灯。 放电灯包括F电极和R电极，其形成熔融电极之前的形状满足以下条件（a）至（c）中的至少一个：（a）F电极的芯线的直径为d1f ，R电极的芯线直径为d1r，d1f> 1.2×d1r; （b）所述F电极的线圈的线径为d2f，R电极的线圈的线径为d2r，d2f> 1.2×d2r; （c）F电极的线圈的绕组数为nf，R电极的线圈的绕组数为nr，nf> 1.2×nr。

公开(公告)号：US08128225B2

公开(公告)日：2012-03-06

申请号：US12710701

申请日：2010-02-23

申请人： Keiji Nishimoto ,  Takashi Noguchi ,  Hiroyuki Seki

发明人： Keiji Nishimoto ,  Takashi Noguchi ,  Hiroyuki Seki

IPC分类号： G02C7/10 ,  G02C7/02 ,  B32B17/06 ,  B05D5/06

CPC分类号： G02B1/115 ,  G02C7/108 ,  G02C2202/16

摘要： A process for producing an optical article having an antireflection layer formed directly or via another layer on an optical base material, includes: forming a primary layer contained in the antireflection layer; and forming a light transmissive conductive layer containing a metal containing germanium as a main component and/or a compound of germanium and a transition metal on a surface of the primary layer.

摘要翻译： 一种光学制品的制造方法，其特征在于，在光学基材上直接或经由另一层形成具有抗反射层的光学物品的制造方法，其特征在于，包括：形成所述防反射层中含有的主层; 以及在所述主层的表面上形成含有锗作为主要成分的金属和/或锗和过渡金属的化合物的透光导电层。

公开(公告)号：US08058094B2

公开(公告)日：2011-11-15

申请号：US12707115

申请日：2010-02-17

申请人： Takashi Noguchi ,  Jong-man Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung ,  Hyuck Lim

发明人： Takashi Noguchi ,  Jong-man Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung ,  Hyuck Lim

IPC分类号： H01L21/00

CPC分类号： H01L29/78645 ,  H01L27/1288 ,  H01L27/3244 ,  H01L29/78624 ,  H01L29/78696

摘要： A transistor includes; at least two polycrystalline silicon layers disposed substantially parallel to each other, each polycrystalline silicon layer including a channel region and at least two high conductivity regions disposed at opposing sides of the channel region; a gate which corresponds to the channel region of the two polycrystalline silicon layers and which crosses the two polycrystalline silicon layers, and a gate insulating layer interposed between the gate and the two polycrystalline silicon layers, wherein low conductivity regions are disposed adjacent to one edge of the gate and are formed between the channel region and one high conductivity region of each polycrystalline silicon layer.

摘要翻译： 晶体管包括： 至少两个多晶硅层基本上彼此平行地布置，每个多晶硅层包括沟道区和至少两个设置在沟道区相对侧的高导电性区; 对应于两个多晶硅层的沟道区并与两个多晶硅层交叉的栅极和介于栅极和两个多晶硅层之间的栅极绝缘层，其中低导电性区域邻近 并且形成在每个多晶硅层的沟道区域和一个高导电率区域之间。

公开(公告)号：US07816678B2

公开(公告)日：2010-10-19

申请号：US12175778

申请日：2008-07-18

申请人： Takashi Noguchi ,  Wenxu Xianyu ,  Huaxiang Yin

发明人： Takashi Noguchi ,  Wenxu Xianyu ,  Huaxiang Yin

IPC分类号： H01L35/24 ,  H01L51/00 ,  H01L31/00 ,  H01L21/00 ,  H01L51/40

CPC分类号： H01L27/1266 ,  H01L27/1255 ,  H01L27/3244 ,  H01L29/78603

摘要： Provided is an organic light emitting display, in which a semiconductor circuit unit of 2T-1C structure including a switching transistor and a driving transistor formed of single crystalline silicon is formed on a plastic substrate. A method of fabricating the single crystalline silicon includes: growing a single crystalline silicon layer to a predetermined thickness on a crystal growth plate; depositing a buffer layer on the single crystalline silicon layer; forming a partition layer at a predetermined depth in the single crystalline silicon layer by, e.g., implanting hydrogen ions in the single crystalline silicon layer from an upper portion of an insulating layer; attaching a substrate to the buffer layer; and releasing the partition layer of the single crystalline silicon layer by heating the partition layer from the crystal growth plate to obtain a single crystalline silicon layer of a predetermined thickness on the substrate.

摘要翻译： 提供一种有机发光显示器，其中在塑料基板上形成包括开关晶体管和由单晶硅形成的驱动晶体管的2T-1C结构的半导体电路单元。 制造单晶硅的方法包括：在晶体生长板上生长单晶硅层至预定厚度; 在单晶硅层上沉积缓冲层; 通过例如从绝缘层的上部注入单晶硅层中的氢离子，在单晶硅层中形成预定深度的分隔层; 将衬底附接到缓冲层; 以及通过从晶体生长板加热分隔层来释放单晶硅层的分隔层，以在基板上获得预定厚度的单晶硅层。

公开(公告)号：US20100228445A1

公开(公告)日：2010-09-09

申请号：US12660823

申请日：2010-03-04

申请人： Toshihide Kondoh ,  Takashi Noguchi

发明人： Toshihide Kondoh ,  Takashi Noguchi

IPC分类号： B60R21/0136

CPC分类号： B60R21/0132 ,  B60R21/01332 ,  B60R21/0136 ,  B60R2021/0004 ,  B60R2021/0011 ,  B60R2021/01322

摘要： An activation device is configured to activate a protection apparatus for protecting an occupant. The activation device includes a front collision detection unit and a rear collision detection unit. The front collision detection unit outputs a front-collision-state activation signal to a front-collision protection apparatus so as to activate the front-collision protection apparatus when detecting front collision of the vehicle. The rear collision detection unit outputs a rear-collision-state activation signal to a rear-collision protection apparatus so as to activate the rear-collision protection apparatus when detecting rear collision of the vehicle. The rear collision detection unit prohibits output of the rear-collision-state activation signal to the rear-collision protection apparatus for a first period when the front collision detection unit detects front collision of the vehicle.

摘要翻译： 激活装置被配置为激活用于保护乘员的保护装置。 激活装置包括前碰撞检测单元和后碰撞检测单元。 前碰撞检测单元向前碰撞保护装置输出前碰撞状态激活信号，以便在检测到车辆的前方碰撞时启动前防撞保护装置。 后方碰撞检测单元向后方碰撞保护装置输出后方碰撞状态激活信号，以便在检测到车辆的后方碰撞时起动后方碰撞保护装置。 当前方碰撞检测部检测到车辆的前方碰撞时，后方碰撞检测部在第一期间禁止向后方碰撞保护装置输出后方碰撞状态激活信号。

公开(公告)号：US07772711B2

公开(公告)日：2010-08-10

申请号：US11430117

申请日：2006-05-09

申请人： Takashi Noguchi ,  Hans S. Cho ,  Wenxu Xianyu ,  Do-young Kim ,  Jang-yeong Kwon ,  Huaxiang Yin ,  Kyung-bae Park ,  Xiaoxin Zhang

发明人： Takashi Noguchi ,  Hans S. Cho ,  Wenxu Xianyu ,  Do-young Kim ,  Jang-yeong Kwon ,  Huaxiang Yin ,  Kyung-bae Park ,  Xiaoxin Zhang

IPC分类号： H01L27/11

CPC分类号： H01L21/84 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/1203 ,  H01L29/66772 ,  H01L29/7842 ,  Y10S257/903

摘要： A semiconductor device including a substrate, a P-MOS single crystal TFT formed on the substrate, and an N-MOS single crystal TFT formed on the P-MOS single crystal TFT. The source region of the P-MOS single crystal TFT and the source region of the N-MOS single crystal TFT may be connected to each other. The P-MOS single crystal TFT and the N-MOS single crystal TFT may share a common gate. Also, the P-MOS single crystal TFT may include a single crystal silicon layer with a crystal plane of (100) and a crystal direction of . The N-MOS single crystal TFT may include a single crystal silicon layer having the same crystal direction as the single crystal silicon layer of the P-MOS single crystal TFT and having a tensile stress greater than the single crystal silicon layer of the P-MOS single crystal TFT.

摘要翻译： 包括基板，形成在基板上的P-MOS单晶TFT的半导体器件和形成在P-MOS单晶TFT上的N-MOS单晶TFT。 P-MOS单晶TFT的源极区域和N-MOS单晶TFT的源极区域可以彼此连接。 P-MOS单晶TFT和N-MOS单晶TFT可以共用公共栅极。 此外，P-MOS单晶TFT可以包括具有（100）的晶面并且晶体方向<100的单晶硅层。 N-MOS单晶TFT可以包括与P-MOS单晶TFT的单晶硅层相同的晶体方向的单晶硅层，其拉应力大于P-MOS的单晶硅层 单晶TFT。

公开(公告)号：US20100193797A1

公开(公告)日：2010-08-05

申请号：US12662272

申请日：2010-04-08

申请人： Huaxing Yin ,  Takashi Noguchi ,  Wenxu Xianyu ,  Kyung-bae Park

发明人： Huaxing Yin ,  Takashi Noguchi ,  Wenxu Xianyu ,  Kyung-bae Park

IPC分类号： H01L29/04 ,  H01L27/088

CPC分类号： H01L21/02675 ,  H01L21/2026 ,  H01L21/84 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/12 ,  H01L27/1281

摘要： Stacked transistors and electronic devices including the stacked transistors. An electronic device includes a substrate, a first transistor on the substrate and including a first active layer, a first gate, and a first gate insulating layer between the first active layer and the first gate, a first metal line spaced apart from the first gate on the substrate, a first insulating layer covering the first transistor and the first metal line, and a second transistor on the first insulating layer between the first transistor and the first metal line, and including a second active layer, a second gate, and a second gate insulating layer between the second active layer and the second gate.

摘要翻译： 堆叠晶体管和包括堆叠晶体管的电子器件。 电子器件包括衬底，衬底上的第一晶体管，并且在第一有源层和第一栅极之间包括第一有源层，第一栅极和第一栅极绝缘层，与第一栅极间隔开的第一金属线 在所述基板上，覆盖所述第一晶体管和所述第一金属线的第一绝缘层，以及在所述第一晶体管和所述第一金属线之间的所述第一绝缘层上的第二晶体管，并且包括第二有源层，第二栅极和 第二栅极绝缘层，位于第二有源层和第二栅极之间。

公开(公告)号：US07714330B2

公开(公告)日：2010-05-11

申请号：US11889471

申请日：2007-08-14

申请人： Hans S. Cho ,  Takashi Noguchi ,  Wenxu Xianyu ,  Do-Young Kim ,  Huaxiang Yin ,  Xiaoxin Zhang

发明人： Hans S. Cho ,  Takashi Noguchi ,  Wenxu Xianyu ,  Do-Young Kim ,  Huaxiang Yin ,  Xiaoxin Zhang

IPC分类号： H01L29/04

CPC分类号： H01L29/78654 ,  H01L29/0673 ,  H01L29/66772 ,  H01L29/78696 ,  Y10S977/762 ,  Y10S977/814 ,  Y10S977/90 ,  Y10S977/938 ,  Y10T428/26

摘要： A silicon nanowire substrate having a structure in which a silicon nanowire film having a fine line-width is formed on a substrate, a method of manufacturing the same, and a method of manufacturing a thin film transistor using the same. The method of manufacturing the silicon nanowire substrate includes preparing a substrate, forming an insulating film on the substrate, forming a silicon film on the insulating film, patterning the insulating film and the silicon film into a strip shape, reducing the line-width of the insulating film by undercut etching at least one lateral side of the insulating film, and forming a self-aligned silicon nanowire film on an upper surface of the insulating film by melting and crystallizing the silicon film.

摘要翻译： 具有其中在衬底上形成具有细线宽度的硅纳米线膜的结构的硅纳米线衬底，其制造方法以及使用其制造薄膜晶体管的方法。 制造硅纳米线基板的方法包括：准备基板，在基板上形成绝缘膜，在绝缘膜上形成硅膜，将绝缘膜和硅膜图形化成带状，减小线宽 通过对绝缘膜的至少一个侧面进行底切蚀刻来绝缘膜，并且通过使硅膜熔化和结晶，在绝缘膜的上表面上形成自对准硅纳米线膜。

公开(公告)号：US20100112763A1

公开(公告)日：2010-05-06

申请号：US12654866

申请日：2010-01-07

申请人： Xiaoxin Zhang ,  Wenxu Xianyu ,  Takashi Noguchi ,  Hans S. Cho ,  Huaxiang Yin

发明人： Xiaoxin Zhang ,  Wenxu Xianyu ,  Takashi Noguchi ,  Hans S. Cho ,  Huaxiang Yin

IPC分类号： H01L21/336

CPC分类号： H01L21/823412 ,  H01L21/823456 ,  H01L21/823807 ,  H01L21/82385

摘要： A semiconductor device includes a transistor. The transistor includes a substrate having an inclined surface, a first upper surface extending from a lower portion of the inclined surface, and a second upper surface extending from an upper end of the inclined surface. A gate stack structure is formed on the inclined surface and includes a gate electrode. A first impurity region formed on one of the first and second upper surfaces contacts the gate stack structure. A second impurity region formed on the second upper surface contacts the gate stack structure. A channel between the first and second impurity regions is formed along the inclined surface in a crystalline direction.

摘要翻译： 半导体器件包括晶体管。 晶体管包括具有倾斜表面的基板，从倾斜表面的下部延伸的第一上表面和从倾斜表面的上端延伸的第二上表面。 栅极堆叠结构形成在倾斜表面上并且包括栅电极。 形成在第一和第二上表面中的一个上的第一杂质区域接触栅极堆叠结构。 形成在第二上表面上的第二杂质区域接触栅堆叠结构。 第一和第二杂质区之间的通道在结晶方向上沿着倾斜表面形成。