公开(公告)号：US6034418A

公开(公告)日：2000-03-07

申请号：US34997

申请日：1998-03-05

申请人： Masazumi Matsuura

发明人： Masazumi Matsuura

IPC分类号： H01L21/768 ,  H01L21/316 ,  H01L23/522 ,  H01L23/532 ,  H01L23/58

CPC分类号： H01L23/5329 ,  H01L2924/0002

摘要： A semiconductor device which has an interlayer insulating film comprised of molecules with silicon-oxygen bonds and silicon-fluorine bonds and contains a rare gas in concentration higher than 10.sup.11 atoms per cm.sup.2. The interlayer insulating film is preferably a fluorine-containing silicon oxide film which contains a rare gas. In a manufacturing process, an interlayer insulating is formed by a chemical vapor deposition from a material gas including a silicon-containing gas, a fluorine compound gas, a rare gas, and oxygen. The silicon-containing gas is preferably SiH.sub.4 gas, and the fluorine compound gas is preferably SiF4 gas. The flow rate of the rare gas is greater than three times the total flow rate of the SiH.sub.4 gas and SiF.sub.4 gas. The rare gas is at least one type of gas selected from neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe).

摘要翻译： 一种半导体器件，其具有由具有硅 - 氧键和硅 - 氟键的分子组成的层间绝缘膜，并且含有浓度高于1011个原子/ cm 2的稀有气体。 层间绝缘膜优选为含有稀有气体的含氟氧化硅膜。 在制造过程中，通过由包含含硅气体，氟化合物气体，稀有气体和氧气的原料气体进行化学气相沉积而形成层间绝缘体。 含硅气体优选为SiH 4气体，氟化合物气体优选为SiF 4气体。 稀有气体的流量大于SiH4气体和SiF4气体总流量的三倍。 稀有气体是选自氖（Ne），氩（Ar），氪（Kr）和氙（Xe）中的至少一种气体。

公开(公告)号：US5937322A

公开(公告)日：1999-08-10

申请号：US114854

申请日：1998-07-14

申请人： Masazumi Matsuura

发明人： Masazumi Matsuura

IPC分类号： H01L21/3205 ,  H01L21/316 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/522 ,  H01L27/108

CPC分类号： H01L27/10844 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31608 ,  Y10S257/908

摘要： A silicon oxide film is formed on a wire array by CVD employing a gas mixture composed of a gas containing silicon atoms and hydrogen peroxide, and the thickness of the silicon oxide film in the region apart from the wire array is formed to be at least 50% of the wire thickness. Planarization of the silicon oxide film over the wire array region is attained.

摘要翻译： 通过使用由含硅原子和过氧化氢的气体组成的气体混合物的CVD形成在线阵列上的氧化硅膜，并且在距离导线阵列的区域中氧化硅膜的厚度形成为至少50 ％的线材厚度。 达到在线阵列区域上的氧化硅膜的平面化。

公开(公告)号：US5811849A

公开(公告)日：1998-09-22

申请号：US630689

申请日：1996-04-12

申请人： Masazumi Matsuura

发明人： Masazumi Matsuura

IPC分类号： H01L21/3205 ,  H01L21/316 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/522 ,  H01L27/108 ,  H01L29/00

CPC分类号： H01L27/10844 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31608 ,  Y10S257/908

摘要： A silicon oxide film is formed on a wire array by CVD employing a gas mixture composed of a gas containing silicon atoms and hydrogen peroxide, and the thickness of the silicon oxide film in the region apart from the wire array is formed to be at least 50% of the wire thickness. Planarization of the silicon oxide film over the wire array region is attained.

摘要翻译： 通过使用由含硅原子和过氧化氢的气体组成的气体混合物的CVD形成在线阵列上的氧化硅膜，并且在距离导线阵列的区域中氧化硅膜的厚度形成为至少50 ％的线材厚度。 达到在线阵列区域上的氧化硅膜的平面化。

公开(公告)号：US5721156A

公开(公告)日：1998-02-24

申请号：US538324

申请日：1995-10-03

申请人： Masazumi Matsuura

发明人： Masazumi Matsuura

IPC分类号： H01L21/3205 ,  H01L21/31 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L21/02129 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76801 ,  H01L21/76819 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002

摘要： A method of manufacturing a semiconductor device having a flat surface and an interlayer insulating film having superior crack resistance is disclosed. A first silicon oxide film having a superior crack resistance is formed on a semiconductor substrate so as to cover the surface of a stepped pattern. A second silicon oxide film having a superior step coverage is deposited on the above-mentioned first silicon oxide film so as to fill the recessed portions of the stepped pattern and to cover the stepped pattern. The above-described second silicon oxide film is etched to a prescribed thickness. A third silicon oxide film superior in filling of recesses is placed into the recessed portions existing on the surface of the above-described second silicon oxide film after its etching. A fourth silicon oxide film is formed on the semiconductor substrate including the above-described second silicon oxide film and third silicon oxide film.

摘要翻译： 公开了一种具有平坦表面的半导体器件的制造方法和具有优异的抗裂性的层间绝缘膜。 在半导体基板上形成具有优异的耐龟裂性的第一氧化硅膜，以覆盖阶梯图案的表面。 在上述第一氧化硅膜上沉积具有优异的台阶覆盖率的第二氧化硅膜，以填充阶梯图案的凹陷部分并覆盖阶梯图案。 将上述第二氧化硅膜蚀刻至规定厚度。 在蚀刻之后，在上述第二氧化硅膜的表面上形成凹陷部的第3氧化硅膜， 在包括上述第二氧化硅膜和第三氧化硅膜的半导体衬底上形成第四氧化硅膜。

公开(公告)号：US5459105A

公开(公告)日：1995-10-17

申请号：US223192

申请日：1994-04-05

申请人： Masazumi Matsuura

发明人： Masazumi Matsuura

IPC分类号： H01L21/3205 ,  H01L21/31 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L ,  H01L21/473

CPC分类号： H01L21/02129 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76801 ,  H01L21/76819 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002

摘要： A method of manufacturing a semiconductor device having a flat surface and an interlayer insulating film having superior crack resistance comprises forming a first silicon oxide film having a superior crack resistance on a semiconductor substrate so as to cover the surface of a stepped pattern. A second silicon oxide film having a superior step coverage is deposited on the first silicon oxide film so as to fill the recessed portions of the stepped pattern and to cover the stepped pattern. The second silicon oxide film is etched to a prescribed thickness. A third silicon oxide film superior in filling of recesses is placed into the recessed portions existing on the surface of the second silicon oxide film after its etching. A fourth silicon oxide film is formed on the semiconductor substrate including the second silicon oxide film and third silicon oxide film.

摘要翻译： 制造具有平坦表面的半导体器件和具有优异抗裂性的层间绝缘膜的方法包括在半导体衬底上形成具有优异抗裂性的第一氧化硅膜以覆盖阶梯状图案的表面。 在第一氧化硅膜上沉积具有优异的台阶覆盖率的第二氧化硅膜，以填充阶梯图案的凹陷部分并覆盖阶梯图案。 将第二氧化硅膜蚀刻至规定厚度。 蚀刻后，第二氧化硅膜的表面上存在的凹部中放置有凹陷部填充优异的第三氧化硅膜。 在包括第二氧化硅膜和第三氧化硅膜的半导体衬底上形成第四氧化硅膜。

公开(公告)号：US5319247A

公开(公告)日：1994-06-07

申请号：US781342

申请日：1991-10-25

申请人： Masazumi Matsuura

发明人： Masazumi Matsuura

IPC分类号： H01L21/3205 ,  H01L21/31 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L21/02129 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76801 ,  H01L21/76819 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002

摘要： A method of manufacturing a semiconductor device having a flat surface and an interlayer insulating film having superior crack resistance is disclosed. A first silicon oxide film having a superior crack resistance is formed on a semiconductor substrate so as to cover the surface of a stepped pattern. A second silicon oxide film having a superior step coverage is deposited on the above-mentioned first silicon oxide film so as to fill the recessed portions of said stepped pattern and to cover said stepped pattern. The above-described second silicon oxide film is etched to a prescribed thickness. A third silicon oxide film superior in filling of recesses is placed into the recessed portions existing on the surface of the above-described second silicon oxide film after its etching. A fourth silicon oxide film is formed on said semiconductor substrate including the above-described second silicon oxide film and third silicon oxide film.

摘要翻译： 公开了一种具有平坦表面的半导体器件的制造方法和具有优异的抗裂性的层间绝缘膜。 在半导体基板上形成具有优异的耐龟裂性的第一氧化硅膜，以覆盖台阶状的表面。 在上述第一氧化硅膜上沉积具有优异的台阶覆盖率的第二氧化硅膜，以便填充所述阶梯图案的凹陷部分并覆盖所述阶梯图案。 将上述第二氧化硅膜蚀刻至规定厚度。 在蚀刻之后，在上述第二氧化硅膜的表面上形成凹陷部的第3氧化硅膜， 在包括上述第二氧化硅膜和第三氧化硅膜的所述半导体衬底上形成第四氧化硅膜。

公开(公告)号：US5250468A

公开(公告)日：1993-10-05

申请号：US857141

申请日：1992-03-25

申请人： Masazumi Matsuura ,  Hideo Kotani ,  Atsuhiro Fujii ,  Shigeo Nagao ,  Hideki Genjo

发明人： Masazumi Matsuura ,  Hideo Kotani ,  Atsuhiro Fujii ,  Shigeo Nagao ,  Hideki Genjo

IPC分类号： H01L21/02 ,  H01L21/316 ,  H01L21/768 ,  H01L21/441

CPC分类号： H01L28/40 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02214 ,  H01L21/02271 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834

摘要： The method of forming an interlayer insulating film insulating first and second layers of conductor patterns in a semiconductor device includes the steps of preparing a reaction gas including at least ozone and silicon alkoxide, wherein the ratio of ozone with respect to silicon alkoxide is adjusted to be not less than 5 within the reaction gas, and forming an insulating film by CVD reacting the reaction gas at atmospheric pressure at the temperature of 350.degree. C.- 450.degree. C., whereupon the interlayer insulating film includes at least the insulating film formed by atmospheric pressure CVD reaction.

摘要翻译： 在半导体器件中形成绝缘第一和第二导体图案层的层间绝缘膜的方法包括以下步骤：制备至少包括臭氧和硅氧烷的反应气体，其中臭氧与烷氧基硅的比例调节为 在反应气体内不少于5个，并通过在350℃-450℃的温度下在大气压下使反应气体进行CVD反应形成绝缘膜，由此层间绝缘膜至少包括由 大气压CVD反应。