公开(公告)号：US20120042898A1

公开(公告)日：2012-02-23

申请号：US13286281

申请日：2011-11-01

申请人： Pamela M. Visintin ,  Michael B. Korzenski

发明人： Pamela M. Visintin ,  Michael B. Korzenski

IPC分类号： C11D7/60 ,  C23G5/02

CPC分类号： C11D11/0047 ,  C11D1/008 ,  C11D3/044 ,  C11D3/2068 ,  C11D3/30 ,  G03F7/425

摘要： Compositions useful in reworking microelectronic device wafers, i.e., removing photoresist from rejected wafers, without damaging underlying layers and structures such as cap layers, interlevel dielectric layers, etch stop layers and metal interconnect material. The semi-aqueous compositions include at least one alkali and/or alkaline earth metal basic salt, at least one organic solvent, water, optionally at least one quaternary ammonium basic salt, optionally at least one metal corrosion inhibitor and optionally at least one water-soluble polymer surfactant.

摘要翻译： 用于重新加工微电子器件晶片的组合物，即从被拒绝的晶片去除光致抗蚀剂，而不损坏下层和诸如盖层，层间电介质层，蚀刻停止层和金属互连材料的结构。 所述半水性组合物包括至少一种碱金属和/或碱土金属碱盐，至少一种有机溶剂，水，任选的至少一种季铵碱式盐，任选的至少一种金属腐蚀抑制剂和任选的至少一种水 - 可溶性聚合物表面活性剂。

公开(公告)号：US20090192065A1

公开(公告)日：2009-07-30

申请号：US11917654

申请日：2006-06-16

申请人： Michael B. Korzenski ,  Pamela M. Visintin ,  Thomas H. Baum ,  David W. Minsek ,  Chongying Xu

发明人： Michael B. Korzenski ,  Pamela M. Visintin ,  Thomas H. Baum ,  David W. Minsek ,  Chongying Xu

IPC分类号： G03F7/42

CPC分类号： C11D11/0047 ,  C11D3/3947 ,  C11D7/08 ,  C11D7/264 ,  C11D7/265 ,  C11D7/32 ,  C11D7/34 ,  C11D7/5004 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02063

摘要： A method and composition for removing hardened photoresist, post-etch photoresist, and/or bottom anti-reflective coating from a microelectronic device is described. The composition may include a dense fluid, e.g., a supercritical fluid, and a dense fluid concentrate including a co-solvent, optionally a fluoride source, and optionally an acid. The dense fluid compositions substantially remove the contaminating residue and/or layers from the microelectronic device prior to subsequent processing, thus improving the morphology, performance, reliability and yield of the microelectronic device.

摘要翻译： 描述了用于从微电子器件去除硬化的光致抗蚀剂，蚀刻后光致抗蚀剂和/或底部抗反射涂层的方法和组合物。 组合物可以包括致密流体，例如超临界流体，以及包含共溶剂，任选的氟化物源和任选的酸的致密流体浓缩物。 致密的流体组合物在随后的处理之前基本上从微电子器件去除污染的残余物和/或层，从而改善微电子器件的形态，性能，可靠性和产量。

公开(公告)号：US07557073B2

公开(公告)日：2009-07-07

申请号：US10827395

申请日：2004-04-19

申请人： Michael B. Korzenski ,  Thomas H. Baum

发明人： Michael B. Korzenski ,  Thomas H. Baum

IPC分类号： C11D7/50

CPC分类号： C11D11/0047 ,  B08B7/0021 ,  C11D3/0042 ,  C11D3/02 ,  C11D3/044 ,  C11D3/43 ,  C11D7/02 ,  C11D7/5004 ,  G03F7/40 ,  G03F7/422 ,  G03F7/425 ,  G03F7/426

摘要： A method and composition for removing ion-implanted photoresist from semiconductor substrates having such photoresist is described. The removal composition contains supercritical CO2 (SCCO2), a co-solvent and a reducing agent for use in removing ion-implanted photoresist. Such removal composition overcomes the intrinsic deficiency of SCCO2 as a removal reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the photoresist and that must be removed from the semiconductor substrate for efficient cleaning.

摘要翻译： 描述了用于从具有这种光致抗蚀剂的半导体衬底去除离子注入的光致抗蚀剂的方法和组合物。 去除组合物含有超临界CO 2（SCCO 2），用于去除离子注入的光致抗蚀剂的共溶剂和还原剂。 这种去除组合物克服了作为去除试剂的SCCO 2的固有缺陷，即SCCO2的非极性特征及其不溶解物质如无机盐和存在于光致抗蚀剂中的极性有机化合物，并且必须除去 从半导体基板进行高效清洗。

公开(公告)号：US07223352B2

公开(公告)日：2007-05-29

申请号：US10285015

申请日：2002-10-31

申请人： Michael B. Korzenski ,  Eliodor G. Ghenciu ,  Chongying Xu ,  Thomas H. Baum

发明人： Michael B. Korzenski ,  Eliodor G. Ghenciu ,  Chongying Xu ,  Thomas H. Baum

IPC分类号： C09K13/00 ,  C09K13/04 ,  C09K13/08 ,  C09K13/06 ,  H01L21/302

CPC分类号： H01L21/02071 ,  C11D7/08 ,  C11D7/10 ,  C11D7/261 ,  C11D7/264 ,  C11D7/265 ,  C11D7/28 ,  C11D7/32 ,  C11D7/3245 ,  C11D7/50 ,  C11D7/5022 ,  C11D11/0047 ,  C23G5/00 ,  H01L21/02052 ,  H01L21/31133 ,  H01L21/32138

摘要： A post-etch residue cleaning composition for cleaning ashed or unashed aluminum/SiN/Si post-etch residue from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2), alcohol, fluoride source, an aluminum ion complexing agent and, optionally, corrosion inhibitor. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the post-etch residue and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having ashed or unashed aluminum/SiN/Si post-etch residue thereon.

摘要翻译： 蚀刻后残留物清洁组合物，用于从半导体衬底上的小尺寸清洁灰化或未沉淀的铝/ SiN / Si后蚀刻残留物。 清洁组合物含有超临界CO 2（SCCO 2），醇，氟化物源，铝离子络合剂和任选的缓蚀剂。 这样的清洁组合物克服了SCCO2作为清洗剂的固有缺陷，即SCCO2的非极性特征及其与溶解残留物中存在的物质如无机盐和极性有机化合物无关，并且与SCCO2的非极性相关 必须从半导体衬底去除以进行有效的清洁。 清洁组合物能够对其上具有灰化或未镀铝/ SiN / Si蚀刻后残留物的基材进行无损伤，无残留的清洁。

公开(公告)号：US07160815B2

公开(公告)日：2007-01-09

申请号：US10782355

申请日：2004-02-19

申请人： Michael B. Korzenski ,  Thomas H. Baum ,  Chongying Xu ,  Eliodor G. Ghenciu

发明人： Michael B. Korzenski ,  Thomas H. Baum ,  Chongying Xu ,  Eliodor G. Ghenciu

IPC分类号： H01L21/461

CPC分类号： B81C1/00936 ,  B08B7/0021 ,  B81C2201/0108 ,  B81C2201/117 ,  H01L21/02063

摘要： A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) and other semiconductor substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid (SCF), an etchant species, a co-solvent, and optionally a surfactant. Such etching compositions overcome the intrinsic deficiency of SCFs as cleaning reagents, viz., the non-polar character of SCFs and their associated inability to solubilize polar species that must be removed from the semiconductor substrate. The resultant etched substrates experience lower incidents of stiction relative to substrates etched using conventional wet etching techniques.

摘要翻译： 描述了用于从微机电系统（MEMS）和其它具有这种牺牲层的半导体衬底去除含硅牺牲层的方法和组合物。 蚀刻组合物包括超临界流体（SCF），蚀刻剂物质，共溶剂和任选的表面活性剂。 这样的蚀刻组合物克服了作为清洗剂的SCF的固有缺陷，即SCF的非极性特征以及它们不溶于必须从半导体衬底去除的极性物质。 所得到的蚀刻的衬底相对于使用常规湿蚀刻技术蚀刻的衬底的沉降事件较少。

公开(公告)号：US07119052B2

公开(公告)日：2006-10-10

申请号：US10602172

申请日：2003-06-24

申请人： Michael B. Korzenski ,  Chongying Xu ,  Thomas H. Baum ,  David Minsek ,  Eliodor G. Ghenciu

发明人： Michael B. Korzenski ,  Chongying Xu ,  Thomas H. Baum ,  David Minsek ,  Eliodor G. Ghenciu

IPC分类号： B01D11/00 ,  G03F7/42

CPC分类号： G03F7/425 ,  C11D7/261 ,  C11D7/28 ,  C11D7/3209 ,  C11D7/5013 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/31133 ,  Y10S134/902 ,  Y10S438/906

摘要： A composition including supercritical fluid and at least one additive selected from fluoro species, and primary and/or secondary amines, optionally with co-solvent, low k material attack-inhibitor(s) and/or surfactant(s). The composition has particular utility for cleaning of semiconductor wafers to remove post-ashing residues therefrom.

摘要翻译： 一种组合物，其包含超临界流体和至少一种选自氟物质的添加剂，以及伯胺和/或仲胺，任选与共溶剂，低k物质攻击抑制剂和/或表面活性剂。 该组合物具有用于清洁半导体晶片从而除去其后灰化残留物的特殊用途。

公开(公告)号：US06989358B2

公开(公告)日：2006-01-24

申请号：US10285146

申请日：2002-10-31

申请人： Michael B. Korzenski ,  Eliodor G. Ghenciu ,  Chongying Xu ,  Thomas H. Baum

发明人： Michael B. Korzenski ,  Eliodor G. Ghenciu ,  Chongying Xu ,  Thomas H. Baum

IPC分类号： B08B3/00

CPC分类号： G03F7/423 ,  C11D7/02 ,  C11D7/10 ,  C11D7/3209 ,  C11D7/3281 ,  C11D7/5022

摘要： A photoresist cleaning composition for removing photoresist and ion implanted photoresist from semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2) and alcohol for use in removing photoresist that is not ion-implanted. When the photoresist has been subjected to ion implantation, the cleaning composition additionally contains a fluorine ion source. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the photoresist and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having photoresist or ion implanted photoresist thereon.

摘要翻译： 一种用于从半导体衬底去除光致抗蚀剂和离子注入的光致抗蚀剂的光致抗蚀剂清洁组合物。 清洁组合物含有超临界CO 2（SCCO 2）和用于除去未离子注入的光致抗蚀剂的醇。 当光致抗蚀剂已经进行离子注入时，清洁组合物另外含有氟离子源。 这种清洁组合物克服了SCCO2作为清洁剂的固有缺陷，即SCCO2的非极性特征及其与溶解光致抗蚀剂中存在并且必须除去的物质如无机盐和极性有机化合物无关 从半导体基板进行高效清洗。 清洁组合物能够对其上具有光致抗蚀剂或离子注入的光致抗蚀剂的基材进行无损伤，无残留的清洁。

公开(公告)号：US06943139B2

公开(公告)日：2005-09-13

申请号：US10284861

申请日：2002-10-31

申请人： Michael B. Korzenski ,  Eliodor G. Ghenciu ,  Chongying Xu ,  Thomas H. Baum

发明人： Michael B. Korzenski ,  Eliodor G. Ghenciu ,  Chongying Xu ,  Thomas H. Baum

IPC分类号： B08B7/00 ,  C11D7/02 ,  C11D7/10 ,  C11D7/32 ,  C11D7/50 ,  H01L21/306 ,  H01L21/311 ,  B08B3/00

CPC分类号： C11D11/0047 ,  B08B7/0021 ,  C11D7/02 ,  C11D7/10 ,  C11D7/3209 ,  C11D7/3281 ,  C11D7/5022 ,  H01L21/02063 ,  H01L21/31116

摘要： A cleaning composition for cleaning particulate contamination from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2), alcohol, fluoride source and, optionally, hydroxyl additive. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in particulate contamination on wafer substrates and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having particulate contamination on Si/SiO2 substrates.

摘要翻译： 一种用于从半导体衬底上的小尺寸清洁颗粒污染的清洁组合物。 清洁组合物含有超临界CO 2（SCCO 2），醇，氟化物源和任选的羟基添加剂。 这种清洁组合物克服了SCCO2作为清洁剂的固有缺陷，即SCCO2的非极性特征及其与溶解诸如无机盐和极性有机化合物的物质无关，这些物质存在于晶片衬底上的颗粒污染物中，并且 必须从半导体衬底去除以进行有效的清洁。 清洁组合物能够对Si / SiO 2基体上具有颗粒污染物的基材进行无损伤，无残留的清洗。