中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

46 records (took 0.028 seconds)

    Non-planar transistor
    43.
    发明授权
    Non-planar transistor 有权
    非平面晶体管

    公开(公告)号：US09117909B2

    公开(公告)日：2015-08-25

    申请号：US14470957

    申请日：2014-08-28

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Lung-En Kuo ,  Po-Wen Su ,  Chen-Yi Weng ,  Hsuan-Hsu Chen

    IPC: H01L29/78 ,  H01L21/762 ,  H01L29/66 ,  H01L27/088 ,  H01L29/06

    CPC classification number: H01L29/7851 ,  H01L21/76224 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/66795 ,  H01L29/7853

    Abstract: A method of forming a fin structure is provided. First, a substrate is provided, wherein a first region, a second region encompassing the first region, and a third region encompassing the second region are defined on the substrate. Then, a plurality of first trenches having a first depth are formed in the first region and the second region, wherein each two first trenches defines a first fin structure. The first fin structure in the second region is removed. Lastly, the first trenches are deepened to form a plurality of second trenches having a second depth, wherein each two second trenches define a second fin structure. The present invention further provides a structure of a non-planar transistor.

    Abstract translation: 提供一种形成翅片结构的方法。 首先，提供衬底，其中第一区域，包围第一区域的第二区域和包围第二区域的第三区域被限定在衬底上。 然后，在第一区域和第二区域中形成具有第一深度的多个第一沟槽，其中每两个第一沟槽限定第一鳍结构。 第二区域中的第一鳍结构被去除。 最后，加深第一沟槽以形成具有第二深度的多个第二沟槽，其中每两个第二沟槽限定第二鳍结构。 本发明还提供了一种非平面晶体管的结构。

    SEMICONDUCTOR STRUCTURE HAVING TRIMMING SPACERS
    44.
    发明申请
    SEMICONDUCTOR STRUCTURE HAVING TRIMMING SPACERS 有权
    具有切割间隔的半导体结构

    公开(公告)号：US20150137197A1

    公开(公告)日：2015-05-21

    申请号：US14608165

    申请日：2015-01-28

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Shyan-Liang Chou ,  Tsung-Min Kuo ,  Po-Wen Su ,  Chun-Mao Chiou ,  Feng-Mou Chen

    IPC: H01L29/78 ,  H01L29/49

    CPC classification number: H01L29/4983 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/7843

    Abstract: A semiconductor structure includes a substrate, a gate electrode disposed on the substrate, wherein the gate electrode has a first top surface. Agate dielectric layer is disposed between the substrate and the gate electrode. A silicon carbon nitride spacer surrounds the gate electrode, wherein the silicon carbon nitride spacer has a second top surface not higher than the first top surface. A silicon oxide spacer surrounds the silicon carbon nitride spacer.

    Abstract translation: 半导体结构包括衬底，设置在衬底上的栅电极，其中栅电极具有第一顶表面。 玛瑙电介质层设置在基板和栅电极之间。 硅碳氮化物间隔物环绕栅电极，其中硅氮化物间隔物具有不高于第一顶表面的第二顶表面。 硅氧化物间隔物包围硅氮化硅间隔物。

    Sidewall Image Transfer Process
    45.
    发明申请
    Sidewall Image Transfer Process 有权
    侧墙图像传输过程

    公开(公告)号：US20140308761A1

    公开(公告)日：2014-10-16

    申请号：US13862484

    申请日：2013-04-15

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Lung-En Kuo ,  Po-Wen Su ,  Chen-Yi Weng ,  Hsuan-Hsu Chen

    IPC: H01L21/308 ,  H01L21/66

    CPC classification number: H01L21/3086 ,  H01L21/31116 ,  H01L21/823431 ,  H01L21/823821 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26 ,  H01L29/66795 ,  H01L29/785

    Abstract: A sidewall image transfer (SIT) process is provided. First, a substrate is provided. A sacrificial layer having a pattern is formed on the substrate. A first measuring step is performed to measure a width of the pattern of the sacrificial layer. A material layer is formed conformally on the sacrificial layer, wherein a thickness of the material layer is adjusted according to the result of the first measuring step. Then, the material layer is removed anisotropically, so the material layer becomes a spacer on a sidewall of the sacrificial layer. Lastly, the sacrificial layer is removed.

    Abstract translation: 提供侧壁图像传送（SIT）处理。 首先，提供基板。 在衬底上形成具有图案的牺牲层。 执行第一测量步骤以测量牺牲层的图案的宽度。 材料层在牺牲层上共形地形成，其中根据第一测量步骤的结果调整材料层的厚度。 然后，各向异性地去除材料层，因此材料层成为牺牲层的侧壁上的间隔物。 最后，去除牺牲层。

    METHOD OF FORMING A FINFET STRUCTURE
    46.
    发明申请
    METHOD OF FORMING A FINFET STRUCTURE 有权
    形成FINFET结构的方法

    公开(公告)号：US20140306272A1

    公开(公告)日：2014-10-16

    申请号：US13863393

    申请日：2013-04-16

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Lung-En Kuo ,  Po-Wen Su ,  Chen-Yi Weng ,  Hsuan-Hsu Chen

    IPC: H01L21/762 ,  H01L29/78

    CPC classification number: H01L29/7851 ,  H01L21/76224 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/66795 ,  H01L29/7853

    Abstract: A method of forming a fin structure is provided. First, a substrate is provided, wherein a first region, a second region encompassing the first region, and a third region encompassing the second region are defined on the substrate. Then, a plurality of first trenches having a first depth are formed in the first region and the second region, wherein each two first trenches defines a first fin structure. The first fin structure in the second region is removed. Lastly, the first trenches are deepened to form a plurality of second trenches having a second depth, wherein each two second trenches define a second fin structure. The present invention further provides a structure of a non-planar transistor.

    Abstract translation: 提供一种形成翅片结构的方法。 首先，提供衬底，其中第一区域，包围第一区域的第二区域和包围第二区域的第三区域被限定在衬底上。 然后，在第一区域和第二区域中形成具有第一深度的多个第一沟槽，其中每两个第一沟槽限定第一鳍结构。 第二区域中的第一鳍结构被去除。 最后，加深第一沟槽以形成具有第二深度的多个第二沟槽，其中每两个第二沟槽限定第二鳍结构。 本发明还提供了一种非平面晶体管的结构。

Patent Agency Ranking