Methods of forming single-crystal metal-silicide nanowires and resulting nanowire structures
    41.
    发明授权
    Methods of forming single-crystal metal-silicide nanowires and resulting nanowire structures 失效
    形成单晶金属硅化物纳米线和所得纳米线结构的方法

    公开(公告)号:US07829050B2

    公开(公告)日:2010-11-09

    申请号:US11707601

    申请日:2007-02-13

    IPC分类号: C01B21/068

    CPC分类号: C30B29/10 C30B29/60

    摘要: Various embodiments of the present invention are directed to methods of forming single-crystal metal-silicide nanowires and resulting nanowire structures. In one embodiment of the present invention, a method of fabricating nanowires is disclosed. In the method, a number of nanowire-precursor members are formed. Each of the nanowire-precursor members includes a substantially single-crystal silicon region and a polycrystalline-metallic region. The substantially single-crystal silicon region and the polycrystalline-metallic region of each of the nanowire-precursor members is reacted to form corresponding substantially single-crystal metal-silicide nanowires. In another embodiment of the present invention, a nanowire structure is disclosed. The nanowire structure includes a substrate having an electrically insulating layer. A number of substantially single-crystal metal-silicide nanowires are positioned on the electrically insulating layer.

    摘要翻译: 本发明的各种实施方案涉及形成单晶金属硅化物纳米线和所得纳米线结构的方法。 在本发明的一个实施例中,公开了一种制造纳米线的方法。 在该方法中,形成许多纳米线前体部件。 每个纳米线前体构件包括基本单晶硅区域和多晶金属区域。 每个纳米线前体部件的大致单晶硅区域和多晶金属区域反应形成对应的基本单晶金属硅化物纳米线。 在本发明的另一个实施方案中,公开了一种纳米线结构。 纳米线结构包括具有电绝缘层的衬底。 大量单晶金属硅化物纳米线位于电绝缘层上。

    Integrated circuits having photonic interconnect layers and methods for fabricating same
    42.
    发明授权
    Integrated circuits having photonic interconnect layers and methods for fabricating same 有权
    具有光互连层的集成电路及其制造方法

    公开(公告)号:US07778501B2

    公开(公告)日:2010-08-17

    申请号:US11732549

    申请日:2007-04-03

    IPC分类号: G02B6/12

    摘要: Various embodiments of the present invention are directed to integrated circuits having photonic interconnect layers and methods for fabricating the integrated circuits. In one embodiment of the present invention, an integrated circuit comprises an electronic device layer and one or more photonic interconnect layers. The electronic device layer includes one or more electronic devices, and the electronic device layer is attached to a surface of an intermediate layer. One of the photonic interconnect layers is attached to an opposing surface of the intermediate layer, and each of the photonic interconnect layers has at least one photonic device in communication with at least one of the electronic devices of the electronic device layer.

    摘要翻译: 本发明的各种实施例涉及具有光子互连层的集成电路和用于制造集成电路的方法。 在本发明的一个实施例中,集成电路包括电子器件层和一个或多个光子互连层。 电子器件层包括一个或多个电子器件,并且电子器件层附着到中间层的表面。 光子互连层中的一个附着到中间层的相对表面,并且每个光子互连层具有与电子器件层的至少一个电子器件通信的至少一个光子器件。

    Compensation for distortion in contact lithography
    43.
    发明授权
    Compensation for distortion in contact lithography 失效
    接触光刻中的失真补偿

    公开(公告)号:US07613538B2

    公开(公告)日:2009-11-03

    申请号:US11492365

    申请日:2006-07-24

    摘要: A method of contact lithography includes predicting distortions likely to occur in transferring a pattern from a mold to a substrate during a contact lithography process; and modifying the mold to compensate for the distortions. A contact lithography system includes a design subsystem configured to generate data describing a lithography pattern; an analysis subsystem configured to identify one or more distortions likely to occur when using a mold created from the data; and a mold modification subsystem configured to modify the data to compensate for the one or more distortions identified by the analysis subsystem.

    摘要翻译: 接触光刻的方法包括预测在接触光刻工艺期间将图案从模具转移到衬底可能发生的变形; 并修改模具以补偿失真。 接触光刻系统包括设计子系统,被配置为产生描述光刻图案的数据; 分析子系统被配置为识别当使用从数据创建的模具时可能发生的一个或多个失真; 以及模具修改子系统,被配置为修改数据以补偿由分析子系统识别的一个或多个失真。

    Surface enhanced raman spectroscopy with periodically deformed SERS-active structure
    44.
    发明授权
    Surface enhanced raman spectroscopy with periodically deformed SERS-active structure 有权
    具有周期性变形的SERS活性结构的表面增强拉曼光谱

    公开(公告)号:US07609377B2

    公开(公告)日:2009-10-27

    申请号:US11796455

    申请日:2007-04-26

    IPC分类号: G01J3/44

    CPC分类号: G01N21/658

    摘要: An apparatus and related methods for facilitating surface-enhanced Raman spectroscopy (SERS) is described. A SERS-active structure near which a plurality of analyte molecules is disposed is periodically deformed at an actuation frequency. A synchronous measuring device synchronized with the actuation frequency receives Raman radiation scattered from the analyte molecules and generates therefrom at least one Raman signal measurement.

    摘要翻译: 描述了用于促进表面增强拉曼光谱(SERS)的装置和相关方法。 多个分析物分子附近的SERS-活性结构以致动频率周期性地变形。 与致动频率同步的同步测量装置接收从分析物分子散射的拉曼辐射,并由此产生至少一个拉曼信号测量。

    Methods of forming single-crystal metal-silicide nanowires and resulting nanowire structures
    47.
    发明申请
    Methods of forming single-crystal metal-silicide nanowires and resulting nanowire structures 失效
    形成单晶金属硅化物纳米线和所得纳米线结构的方法

    公开(公告)号:US20080193359A1

    公开(公告)日:2008-08-14

    申请号:US11707601

    申请日:2007-02-13

    IPC分类号: C01B21/068

    CPC分类号: C30B29/10 C30B29/60

    摘要: Various embodiments of the present invention are directed to methods of forming single-crystal metal-silicide nanowires and resulting nanowire structures. In one embodiment of the present invention, a method of fabricating nanowires is disclosed. In the method, a number of nanowire-precursor members are formed. Each of the nanowire-precursor members includes a substantially single-crystal silicon region and a polycrystalline- metallic region. The substantially single-crystal silicon region and the polycrystalline-metallic region of each of the nanowire-precursor members is reacted to form corresponding substantially single-crystal metal-silicide nanowires. In another embodiment of the present invention, a nanowire structure is disclosed. The nanowire structure includes a substrate having an electrically insulating layer. A number of substantially single-crystal metal-silicide nanowires are positioned on the electrically insulating layer.

    摘要翻译: 本发明的各种实施方案涉及形成单晶金属硅化物纳米线和所得纳米线结构的方法。 在本发明的一个实施例中,公开了一种制造纳米线的方法。 在该方法中,形成许多纳米线前体部件。 每个纳米线前体构件包括大致单晶硅区域和多晶金属区域。 每个纳米线前体部件的大致单晶硅区域和多晶金属区域反应形成对应的基本单晶金属硅化物纳米线。 在本发明的另一个实施方案中,公开了一种纳米线结构。 纳米线结构包括具有电绝缘层的衬底。 大量单晶金属硅化物纳米线位于电绝缘层上。

    Method for arranging nanoparticles by way of an electric field, structures and systems therefor
    48.
    发明申请
    Method for arranging nanoparticles by way of an electric field, structures and systems therefor 审中-公开
    通过电场,结构和系统布置纳米颗粒的方法

    公开(公告)号:US20080093217A1

    公开(公告)日:2008-04-24

    申请号:US11584678

    申请日:2006-10-20

    IPC分类号: G01N27/26

    CPC分类号: G01N21/658

    摘要: A method of forming a plurality of NERS-active structures is disclosed. Particularly, a substrate having a surface and a liquid including nanoparticles is deposited on at least a portion of the surface of the substrate. At least one electric field may be generated proximate to the surface and at least a portion of the nanoparticles may be arranged via the electric field. A system includes at least two electrodes configured for producing at least one electric field for substantially arranging nanoparticles substantially according to a selected pattern. A NERS-active structure includes a substrate and a plurality of features located at predetermined positions on a surface of the substrate and at least one NERS-active nanoparticle at least partially embedded therein.

    摘要翻译: 公开了一种形成多个NERS-活性结构的方法。 特别地,具有表面和包含纳米颗粒的液体的基底沉积在基底表面的至少一部分上。 可以在表面附近产生至少一个电场,并且可以经由电场布置至少一部分纳米颗粒。 一种系统包括至少两个电极,所述至少两个电极被配置用于产生至少一个电场,用于基本上根据所选择的图案基本上布置纳米颗粒。 NERS活性结构包括基底和位于基底表面上的预定位置的多个特征以及至少部分地嵌入其中的至少一个NERS-活性纳米颗粒。

    Compensation for distortion in contact lithography
    49.
    发明申请
    Compensation for distortion in contact lithography 失效
    接触光刻中的失真补偿

    公开(公告)号:US20080021587A1

    公开(公告)日:2008-01-24

    申请号:US11492365

    申请日:2006-07-24

    IPC分类号: G06F17/50 G06F19/00

    摘要: A method of contact lithography includes predicting distortions likely to occur in transferring a pattern from a mold to a substrate during a contact lithography process; and modifying the mold to compensate for the distortions. A contact lithography system includes a design subsystem configured to generate data describing a lithography pattern; an analysis subsystem configured to identify one or more distortions likely to occur when using a mold created from the data; and a mold modification subsystem configured to modify the data to compensate for the one or more distortions identified by the analysis subsystem.

    摘要翻译: 接触光刻的方法包括预测在接触光刻工艺期间将图案从模具转移到衬底可能发生的变形; 并修改模具以补偿失真。 接触光刻系统包括设计子系统,被配置为产生描述光刻图案的数据; 分析子系统被配置为识别当使用从数据创建的模具时可能发生的一个或多个失真; 以及模具修改子系统,被配置为修改数据以补偿由分析子系统识别的一个或多个失真。

    Monolithic system and method for enhanced Raman spectroscopy
    50.
    发明授权
    Monolithic system and method for enhanced Raman spectroscopy 有权
    用于增强拉曼光谱的单片系统和方法

    公开(公告)号:US07151599B2

    公开(公告)日:2006-12-19

    申请号:US11044421

    申请日:2005-01-27

    IPC分类号: G01J3/44 G01N21/65

    CPC分类号: G01N21/658 G01N2201/0873

    摘要: Devices, systems, and methods for enhancing Raman spectroscopy and hyper-Raman are disclosed. A molecular analysis device for performing Raman spectroscopy comprises a substrate and a laser source disposed on the substrate. The laser source may be configured for emanating a laser radiation, which may irradiate an analyte disposed on a Raman enhancement structure. The Raman enhancement structure may be disposed in a waveguide. The molecular analysis device also includes a wavelength demultiplexer and radiation sensors disposed on the substrate and configured for receiving a Raman scattered radiation, which may be generated by the irradiation of the analyte and Raman enhancement structure.

    摘要翻译: 公开了用于增强拉曼光谱和超拉曼的装置,系统和方法。 用于执行拉曼光谱的分子分析装置包括设置在基板上的基板和激光源。 激光源可以被配置为发射激光辐射,其可照射设置在拉曼增强结构上的分析物。 拉曼增强结构可以设置在波导中。 该分子分析装置还包括布置在基板上的波长解复用器和辐射传感器,并且被配置为用于接收可以通过分析物的照射和拉曼增强结构产生的拉曼散射辐射。