公开(公告)号：US20080164504A1

公开(公告)日：2008-07-10

申请号：US11857396

申请日：2007-09-18

Applicant: Wei-Su Chen ,  Yi-Chan Chen ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Der-Sheng Chao ,  Chih-Wei Chen ,  Ming-Jinn Tsai

Inventor： Wei-Su Chen ,  Yi-Chan Chen ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Der-Sheng Chao ,  Chih-Wei Chen ,  Ming-Jinn Tsai

IPC: H01L47/00 ,  H01L21/76

CPC classification number: H01L27/2409 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/124 ,  H01L45/126 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1691

Abstract: A phase change memory device is provided. The phase change memory device comprises a substrate. An electrode layer is on the substrate. A phase change memory structure is on the electrode layer and electrically connected to the electrode layer, wherein the phase change memory structure comprises a cup-shaped heating electrode on the electrode layer. An insulating layer is on the cup-shaped heating electrode along a first direction covering a portion of the cup-shaped heating electrode. An electrode structure is on the cup-shaped heating electrode along a second direction covering a portion of the insulating layer and the cup-shaped heating electrode. A pair of double spacers is on a pair of sidewalls of the electrode structure covering a portion of the cup-shaped heating electrode, wherein the double spacer comprises a phase change material spacer and an insulating material spacer on a sidewall of the phase change material spacer.

Abstract translation: 提供了相变存储器件。 相变存储器件包括衬底。 电极层位于基板上。 相变存储器结构在电极层上并电连接到电极层，其中相变存储器结构包括在电极层上的杯形加热电极。 绝缘层沿着覆盖杯状加热电极的一部分的第一方向位于杯状加热电极上。 电极结构沿着覆盖绝缘层和杯状加热电极的一部分的第二方向位于杯状加热电极上。 一对双间隔物位于电极结构的一对侧壁上，覆盖杯状加热电极的一部分，其中双间隔物包括相变材料间隔物和在相变材料间隔物的侧壁上的绝缘材料间隔物 。

公开(公告)号：US20070291533A1

公开(公告)日：2007-12-20

申请号：US11758559

申请日：2007-06-05

Applicant: Yen Chuo ,  Wen-Han Wang ,  Min-Hung Lee ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Te-Sheng Chao ,  Yi-Chan Chen ,  Wei-Su Chen

Inventor： Yen Chuo ,  Wen-Han Wang ,  Min-Hung Lee ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Te-Sheng Chao ,  Yi-Chan Chen ,  Wei-Su Chen

IPC: G11C11/00

CPC classification number: H01L45/06 ,  H01L45/124 ,  H01L45/144 ,  H01L45/1691

Abstract: The invention provides a phase change memory device comprising a stacked structure disposed on a substrate. The stacked structure comprises a first electrode, a second electrode overlying the first electrode and an insulating layer interposed between the first and the second electrodes. A memory spacer is formed on part of the sidewall of the stacked structure to contact the first electrode, the insulating layer and the second electrode.

Abstract translation: 本发明提供一种相变存储器件，其包括设置在衬底上的层叠结构。 层叠结构包括第一电极，覆盖第一电极的第二电极和插在第一和第二电极之间的绝缘层。 在层叠结构的侧壁的一部分上形成有与第一电极，绝缘层和第二电极接触的记忆间隔物。

公开(公告)号：US20070152205A1

公开(公告)日：2007-07-05

申请号：US11463899

申请日：2006-08-11

Applicant: Wei-Su Chen

Inventor： Wei-Su Chen

IPC: H01L47/00

CPC classification number: H01L27/2463 ,  H01L45/06 ,  H01L45/124 ,  H01L45/126 ,  H01L45/1691

Abstract: A phase change memory (PCM) device includes a substrate, bottom electrodes disposed in the substrate, a first dielectric layer disposed on the substrate, second dielectric layers, third dielectric layers, cup-shaped thermal electrodes, top electrodes, and PC material spacers. In the PCM device, each cup-shaped thermal electrode contacts with each bottom electrode. Second and third dielectric layers are disposed over the substrate in different directions, wherein each of the second and third dielectric layers covers a portion of the area surrounded by each cup-shaped thermal electrode, and the third dielectric layers overlay the second dielectric layers. The top electrodes are disposed on the third dielectric layers, wherein a plurality of stacked structure composed of the third dielectric layers and the top electrodes are formed thereon. The PC material spacers are formed on the sidewalls of each stacked structure and physically and electrically contact the cup-shaped thermal electrodes and the top electrodes.

Abstract translation: 相变存储器（PCM）装置包括基板，设置在基板中的底部电极，设置在基板上的第一介电层，第二介电层，第三电介质层，杯形热电极，顶部电极和PC材料间隔物。 在PCM装置中，每个杯状热电极与每个底部电极接触。 第二和第三电介质层设置在不同方向上的衬底上，其中第二和第三电介质层中的每一个覆盖由每个杯形热电极包围的区域的一部分，并且第三电介质层覆盖第二电介质层。 顶部电极设置在第三电介质层上，其中在其上形成由第三电介质层和顶部电极构成的多个层叠结构。 PC材料间隔件形成在每个堆叠结构的侧壁上，并与杯状热电极和顶部电极物理和电接触。

公开(公告)号：US06830981B2

公开(公告)日：2004-12-14

申请号：US10301715

申请日：2002-11-22

Applicant: Chun-Tao Lee ,  Lin-Hung Shi ,  Chi-Cherng Jeng ,  Wen-Ti Lin ,  Wei-Su Chen

Inventor： Chun-Tao Lee ,  Lin-Hung Shi ,  Chi-Cherng Jeng ,  Wen-Ti Lin ,  Wei-Su Chen

IPC: H01L21331

CPC classification number: H01L51/057 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0595 ,  Y10S977/843 ,  Y10S977/845

Abstract: A vertical nanotube transistor and a process for fabricating the same. First, a source layer and a catalyst layer are successively formed on a substrate. A dielectric layer is formed on the catalyst layer and the substrate. Next, the dielectric layer is selectively removed to form a first dielectric mesa, a gate dielectric layer spaced apart from the first dielectric mesa by a first opening, and a second dielectric mesa spaced apart from the gate dielectric layer by a second opening. Next, a nanotube layer is formed in the first opening. Finally, a drain layer is formed on the nanotube layer and the first dielectric mesa, and a gate layer is formed in the second opening. The formation position of the nanotubes can be precisely controlled.

公开(公告)号：US06734074B2

公开(公告)日：2004-05-11

申请号：US10057009

申请日：2002-01-24

Applicant: Wei-Su Chen ,  Hui-Chi Su ,  Yi-Shian Chen ,  Chao-Chiun Liang ,  Cheng Hong Lee ,  Jeng En Juang

Inventor： Wei-Su Chen ,  Hui-Chi Su ,  Yi-Shian Chen ,  Chao-Chiun Liang ,  Cheng Hong Lee ,  Jeng En Juang

IPC: H01L2120

CPC classification number: H01L28/10 ,  H01F17/0006 ,  H01F41/041 ,  H01L27/08

Abstract: Within both a micro fabrication and a method for fabricating the micro fabrication there is formed over a substrate a spirally patterned conductor layer spirally topographically tapered in a vortex shape. The spirally patterned conductor layer is particularly useful as a microelectronic inductor structure within a microelectronic fabrication.

Abstract translation: 在微制造和微制造的制造方法中，在衬底上形成螺旋形图案化的导体层，其中涡旋形状呈螺旋状地呈渐变。 螺旋形图案的导体层特别可用作微电子制造中的微电子电感器结构。