摘要:
A processing system including a chamber defining an interior cavity having a processing tube assembly arranged within the interior cavity. A heating assembly moveable relative to the processing tube assembly from a first position where said processing tube assembly is disposed within the heating assembly and a second position where the processing tube assembly is exposed to an internal environment within the interior cavity of the chamber.
摘要:
A wafer processing system occupies minimal floor space by using vertically mounted modules such as reactors, load locks, and cooling stations. Further saving in floor space is achieved by using a loading station which employs rotational motion to move a wafer carrier into a load lock. The wafer processing system includes a robot having extension, rotational, and vertical motion for accessing vertically mounted modules. The robot is internally cooled and has a heat resistant end-effector, making the robot compatible with high temperature semiconductor processing.
摘要:
A positionable arm composed of multiple member segments connected by an adjustable joint which may be fixedly positioned and repeatedly repositioned. The first member includes an end portion defining a first connector opening and an inner surface defining a chamber. A slideable piston provided in the first member includes a first end and a second end, the first end being adjacent the chamber and creating a seal along the inner surface of the first member. A rotatable connector is received in the first member between the second end of said piston and the end portion of the first member, and a second member is attached to the rotatable connector. To position the arm, a pressurized fluid source supplies compressed air to the chamber, which presses the piston against the rotatable connector, fixedly clamping the connector between the piston and the end portion of the first chamber.
摘要:
A heating apparatus and method for isothermally distributing a temperature across the surface of a semiconductor device during processing. Specifically, a chamber is provided defining a cavity, which is configured to receive a single semiconductor wafer. A plurality of resistive heating elements are provided and advantageously arranged in the cavity. The heating elements are disposed across the chamber and are aligned in close proximity to one another so as to provide an even heating temperature distribution. In accordance with the present invention, the cavity is divided into heating zones. The resistive heating elements are each individually assigned to a zone and are independently controllable. By individually varying the amount of energy emanating from each resistive heating element, an isothermal temperature distribution may be generated across each zone.
摘要:
An adapter used in conjunction with voltage modules to provide multiple and variable DC output voltages. The adapter may include a circuit for stepping down an AC input voltage to lower AC output voltages. A voltage module is provided having an interface bus, configured to be coupleable to a distribution bus on the voltage adapter. Preferably, the voltage module includes AC-DC conversion circuitry, such that the AC output voltages received from the adapter may be converted to DC voltages. Once the adapter and voltage module are coupled together, the voltage module allows the user to select among the multiple DC output voltages provided. In some embodiments, the adapter includes additional circuitry for converting the stepped-down AC voltages into DC output voltages. Additional separate voltage modules may be coupled to the first voltage module, in series, to form a modular stack of voltage modules. Like the first voltage module, the second voltage module may have a selectable output voltage, as well.
摘要:
Methods and systems for in situ process control, monitoring, optimization and fabrication of devices and components on semiconductor and related material substrates includes a light illumination system and electrical probe circuitry. The light illumination system may include a light source and detectors to measure optical properties of the in situ substrate while the electrical probe circuitry causes one or more process steps due to applied levels of voltage or current signals. The electrical probe circuitry may measure changes in electrical properties of the substrate due to the light illumination, the applied voltages and/or currents or other processes. The in situ process may be controlled on the basis of the optical and electrical measurements.
摘要:
Systems and techniques for improved spectroscopy. In some embodiments, mechanical and/or optical zoom mechanisms may be provided for monochromator systems. For example, movable detector systems allow a detector to be positioned with respect to a dispersive element in order to obtain a first resolution. The detector systems may then allow the detector to be positioned with respect to a dispersive element to obtain a second different resolution. In some embodiments, spectroscopy of a first sample region may be performed using a plurality of excitation wavelengths. Multiple detectors may be positioned to receive light associated with different ones of the plurality of excitation wavelengths.
摘要:
Methods and systems for control and monitoring processing of semiconductor materials with a focused laser beam. Laser light may be focused on a sample to excite optical emission at the sample surface during processing, which may include laser processing. Optical emission spectra produced may be analyzed for various properties effectively during the process. For example, process effects such as chemical composition analysis, species concentration, depth profiling, homogeneity characterization and mapping, purity, and reactivity may be monitored by optical spectral analysis. The wavelength may be selected to be appropriate for the process effect chosen.
摘要:
Systems and techniques for improved spectroscopy. In some embodiments, mechanical and/or optical zoom mechanisms may be provided for monochromator systems. For example, movable detector systems allow a detector to be positioned with respect to a dispersive element in order to obtain a first resolution. The detector systems may then allow the detector to be positioned with respect to a dispersive element to obtain a second different resolution. In some embodiments, spectroscopy of a first sample region may be performed using a plurality of excitation wavelengths. Multiple detectors may be positioned to receive light associated with different ones of the plurality of excitation wavelengths.
摘要:
A metallic, semiconductor, dielectric or oxide layer, such as a thin gate oxide, is formed by supplying a wafer in a processing chamber with thermal energy to heat the wafer and light energy, such as laser light at a selected wavelength, to improve the quality of the resulting layer. The laser light may be focused and/or scanned to control the depth and spatial extent of laser processing.