公开(公告)号：US20080300837A1

公开(公告)日：2008-12-04

申请号：US11755911

申请日：2007-05-31

申请人： Melissa Jane Buco ,  Genady Grabarnik ,  Larisa Shwartz ,  Maheswaran Surendra ,  Christopher Ward

发明人： Melissa Jane Buco ,  Genady Grabarnik ,  Larisa Shwartz ,  Maheswaran Surendra ,  Christopher Ward

IPC分类号： G06G7/48

CPC分类号： G06Q10/00

摘要： The exemplary embodiments of the invention provide methods, computer program products and apparatus that describe techniques for improved selection of agreements between entities, such as between a service provider and another entity (e.g., a supplier or customer of the service provider). In one non-limiting, exemplary embodiment, a method includes: providing a workflow model for a plurality of sub-processes, wherein the plurality of sub-processes has a plurality of second values, wherein each sub-process of the plurality of sub-processes has a different second value of the plurality of second values corresponding to a property common to each sub-process of the plurality of sub-processes, wherein the workflow model is a workflow model of a process; determining a first probability distribution of a first value for the process based on a plurality of second probability distributions for the plurality of second values, wherein each second probability distribution of the plurality of second probability distributions is for a different second value of the plurality of second values; and selecting an agreement based on the determined first probability distribution of the first value, wherein the selected agreement is an agreement to be used between a first entity and a second entity.

摘要翻译： 本发明的示例性实施例提供了描述用于改进实体之间的协议选择的技术的方法，计算机程序产品和装置，例如在服务提供商和另一实体（例如，服务提供商的供应商或客户）之间。 在一个非限制性的示例性实施例中，一种方法包括：为多个子过程提供工作流模型，其中所述多个子过程具有多个第二值，其中所述多个子过程中的每个子过程， 过程具有与多个子过程的每个子过程共同的属性对应的多个第二值的不同的第二值，其中工作流模型是过程的工作流模型; 基于所述多个第二值的多个第二概率分布来确定所述处理的第一值的第一概率分布，其中所述多个第二概率分布中的每个第二概率分布用于所述多个第二概率分布中的所述多个第二概率分布的不同第二值 价值观 以及基于所确定的第一值的第一概率分布来选择协议，其中所选择的协议是在第一实体和第二实体之间使用的协议。

公开(公告)号：US07326983B2

公开(公告)日：2008-02-05

申请号：US11082993

申请日：2005-03-17

申请人： An L. Steegen ,  Maheswaran Surendra ,  Hsing-Jen Wann ,  Ying Zhang ,  Franz Zach ,  Robert Wong

发明人： An L. Steegen ,  Maheswaran Surendra ,  Hsing-Jen Wann ,  Ying Zhang ,  Franz Zach ,  Robert Wong

IPC分类号： H01L27/108

CPC分类号： H01L29/66651 ,  H01L21/823481 ,  H01L21/823878 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0653 ,  H01L29/66772

摘要： A first aspect of the present invention is a method of forming an isolation structure including: (a) providing a semiconductor substrate; (b) forming a buried N-doped region in the substrate; (c) forming a vertical trench in the substrate, the trench extending into the N-doped region; (d) removing the N-doped region to form a lateral trench communicating with and extending perpendicular to the vertical trench; and (e) at least partially filling the lateral trench and filling the vertical trench with one or more insulating materials.

摘要翻译： 本发明的第一方面是一种形成隔离结构的方法，包括：（a）提供半导体衬底; （b）在衬底中形成掩埋的N掺杂区域; （c）在所述衬底中形成垂直沟槽，所述沟槽延伸到所述N掺杂区域中; （d）去除所述N掺杂区域以形成与所述垂直沟槽连通并垂直于所述垂直沟槽延伸的横向沟槽; 和（e）至少部分地填充横向沟槽并用一种或多种绝缘材料填充垂直沟槽。

公开(公告)号：US20080004991A1

公开(公告)日：2008-01-03

申请号：US11478747

申请日：2006-06-30

申请人： Glenn C. Aikens ,  Naga A. Ayachitula ,  Messaoud B. Benantar ,  Krishna S. Garimella ,  Hari Haranath Madduri ,  Yan Or ,  Larisa Shwartz ,  Maheswaran Surendra ,  Steve Weinberger

发明人： Glenn C. Aikens ,  Naga A. Ayachitula ,  Messaoud B. Benantar ,  Krishna S. Garimella ,  Hari Haranath Madduri ,  Yan Or ,  Larisa Shwartz ,  Maheswaran Surendra ,  Steve Weinberger

IPC分类号： G06Q30/00

CPC分类号： G06Q10/00 ,  G06Q30/0601

摘要： A global service management configuration comprises a plurality of interrelated administrative objects. One or more of the plurality of interrelated administrative objects provide access control of one or more of a plurality of configuration items of a configuration management database by at least one of the plurality of interrelated administrative objects.

摘要翻译： 全局服务管理配置包括多个相互关联的管理对象。 多个相互关联的管理对象中的一个或多个通过多个相互关联的管理对象中的至少一个提供对配置管理数据库的多个配置项中的一个或多个的访问控制。

公开(公告)号：US20070240162A1

公开(公告)日：2007-10-11

申请号：US11763726

申请日：2007-06-15

申请人： David Coleman ,  Steven Froehlich ,  Joseph Hellerstein ,  Lawrence Hsiung ,  Edwin Lassettre ,  Todd Mummert ,  Mukund Raghavachari ,  Lance Russell ,  Maheswaran Surendra ,  Noshir Wadia ,  Peng Ye

发明人： David Coleman ,  Steven Froehlich ,  Joseph Hellerstein ,  Lawrence Hsiung ,  Edwin Lassettre ,  Todd Mummert ,  Mukund Raghavachari ,  Lance Russell ,  Maheswaran Surendra ,  Noshir Wadia ,  Peng Ye

IPC分类号： G06F9/00

CPC分类号： G06F11/008

摘要： Automated or autonomic techniques for managing deployment of one or more resources in a computing environment based on varying workload levels. The automated techniques may comprise predicting a future workload level based on data associated with the computing environment. Then, an estimation is performed to determine whether a current resource deployment is insufficient, sufficient, or overly sufficient to satisfy the future workload level. Then, one or more actions are caused to be taken when the current resource deployment is estimated to be insufficient or overly sufficient to satisfy the future workload level. Actions may comprise resource provisioning, resource tuning and/or admission control.

摘要翻译： 基于不同的工作负载级别来管理计算环境中的一个或多个资源的部署的自动或自主技术。 自动化技术可以包括基于与计算环境相关联的数据预测未来的工作负载水平。 然后，执行估计以确定当前资源部署是否不充足，足够或过度足以满足未来的工作负载水平。 然后，当估计当前资源部署不足够或过度足以满足未来的工作负载级别时，会采取一个或多个动作。 动作可以包括资源调配，资源调整和/或准入控制。

公开(公告)号：US20070220509A1

公开(公告)日：2007-09-20

申请号：US11361783

申请日：2006-02-24

申请人： Larisa Shwartz ,  Naga Ayachitula ,  Maheswaran Surendra ,  Genady Grabarnik

发明人： Larisa Shwartz ,  Naga Ayachitula ,  Maheswaran Surendra ,  Genady Grabarnik

IPC分类号： G06F9/445

CPC分类号： G06F8/61

摘要： A system, method, and computer program product for provisioning software on at least one node in a plurality of computational nodes in a distributed information processing system are disclosed. The method includes accepting a plurality of requirements associated with a software product. The plurality of requirements is expanded into multiple sets of installation requirements. At least one set of installation requirements in the multiple sets of installation requirements is minimized to produce at least one minimized set of installation requirements. At least one installation topology is determined using Rough Set Theory for the software product based on the at least one minimized set of installation requirements. The at least one installation topology is compared to a set of capabilities included on at least one computational node to determine a respective set of missing resources for the at least one computational node.

摘要翻译： 公开了一种用于在分布式信息处理系统中的多个计算节点中的至少一个节点上配置软件的系统，方法和计算机程序产品。 该方法包括接受与软件产品相关联的多个需求。 多项要求扩展到多套安装要求。 将多组安装要求中的至少一组安装要求最小化，以产生至少一组最小化的安装要求。 基于至少一个最小化的安装要求集，至少使用用于软件产品的粗糙集理论来确定安装拓扑。 将所述至少一个安装拓扑与包括在至少一个计算节点上的一组功能进行比较，以确定所述至少一个计算节点的相应丢失资源集合。

公开(公告)号：US06678569B2

公开(公告)日：2004-01-13

申请号：US10013070

申请日：2001-11-06

申请人： Raymond J. Bunkofske ,  John Z. Colt, Jr. ,  James J McGill ,  Nancy T. Pascoe ,  Maheswaran Surendra ,  Marc A. Taubenblatt ,  Asif Ghias

发明人： Raymond J. Bunkofske ,  John Z. Colt, Jr. ,  James J McGill ,  Nancy T. Pascoe ,  Maheswaran Surendra ,  Marc A. Taubenblatt ,  Asif Ghias

IPC分类号： G06F1900

CPC分类号： G05B23/0221 ,  G05B2219/45031 ,  H01L22/20

摘要： A method and structure for controlling a manufacturing tool includes measuring different manufacturing parameters of the tool, transforming a plurality of time series of the manufacturing parameters into intermediate variables based on restrictions and historical reference statistics, generating a surrogate variable based on the intermediate variables, if the surrogate variable exceeds a predetermined limit, identifying a first intermediate variable, of the intermediate variables, that caused the surrogate variable to exceed the predetermined limit and identifying a first manufacturing parameter associated with the first intermediate variable, and inhibiting further operation of the tool until the first manufacturing parameter has been modified to bring the surrogate value within the predetermined limit.

摘要翻译： 用于控制制造工具的方法和结构包括测量工具的不同制造参数，基于限制和历史参考统计将多个制造参数的时间序列变换为中间变量，基于中间变量生成替代变量，如果 替代变量超过预定的限制，识别导致替代变量超过预定极限的中间变量的第一中间变量，并且识别与第一中间变量相关联的第一制造参数，并且禁止工具的进一步操作直到 修改了第一制造参数以使代理值在预定限度内。

公开(公告)号：US06521383B2

公开(公告)日：2003-02-18

申请号：US09981033

申请日：2001-10-17

申请人： Maheswaran Surendra ,  Douglas E. Benoit ,  Cameron J. Brooks

发明人： Maheswaran Surendra ,  Douglas E. Benoit ,  Cameron J. Brooks

IPC分类号： G03F900

CPC分类号： G03F1/22 ,  G03F1/84

摘要： A method of preparing an x-ray mask comprising providing a substrate, and applying sequentially to a surface of the substrate i) an etch stop layer resistant to etchant for an x-ray absorber, and ii) an x-ray absorber layer. The method then includes removing a portion of the substrate below the layers to create an active region of the substrate above the removed portion of the substrate and an inactive region over remaining portions of the substrate, applying a resist layer above the absorber layer, and exposing a portion of the resist layer using electron beam irradiation and developing the resist layer to form a latent mask image over the active region of the substrate. The method then includes removing the exposed portion of the resist layer to leave a resist layer mask image over the active region of the substrate, and etching the absorber layer to leave an absorber layer mask image over the designated active region of the substrate while simultaneously removing the absorber layer from the inactive region to form, for example, an x-ray mask, on the substrate.

公开(公告)号：US06365326B1

公开(公告)日：2002-04-02

申请号：US09307126

申请日：1999-05-07

申请人： Maheswaran Surendra ,  Douglas E. Benoit ,  Cameron J. Brooks

发明人： Maheswaran Surendra ,  Douglas E. Benoit ,  Cameron J. Brooks

IPC分类号： G03C500

CPC分类号： G03F1/22 ,  G03F1/84

摘要： A method of preparing an x-ray mask comprising providing a substrate, and applying sequentially to a surface of the substrate i) an etch stop layer resistant to etchant for an x-ray absorber, and ii) an x-ray absorber layer. The method then includes removing a portion of the substrate below the layers to create an active region of the substrate above the removed portion of the substrate and an inactive region over remaining portions of the substrate, applying a resist layer above the absorber layer, and exposing a portion of the resist layer using electron beam irradiation and developing the resist layer to form a latent mask image over the active region of the substrate. The method then includes removing the exposed portion of the resist layer to leave a resist layer mask image over the active region of the substrate, and etching the absorber layer to leave an absorber layer mask image over the designated active region of the substrate while simultaneously removing the absorber layer from the inactive region to form, for example, an x-ray mask, on the substrate.

摘要翻译： 一种制备x射线掩模的方法，包括提供衬底，并且顺序地施加到衬底的表面上i）抗x射线吸收体的蚀刻剂的蚀刻停止层，以及ii）x射线吸收层。 该方法然后包括去除层之下的衬底的一部分以在衬底的去除部分上方形成衬底的有源区，并且在衬底的剩余部分上形成非活性区域，在吸收层上施加抗蚀剂层，并暴露 使用电子束照射的抗蚀剂层的一部分，并且使抗蚀剂层显影以在衬底的有源区上形成潜掩模图像。 该方法然后包括去除抗蚀剂层的暴露部分以在衬底的有源区上留下抗蚀剂层掩模图像，并且蚀刻吸收层以在衬底的指定有源区上留下吸收层掩模图像，同时去除 来自非活性区域的吸收层，形成例如x射线掩模。

公开(公告)号：US5716486A

公开(公告)日：1998-02-10

申请号：US635056

申请日：1996-04-19

申请人： Gary S. Selwyn ,  Manoj Dalvie ,  C. Richard Guarnieri ,  James J. McGill ,  Gary W. Rubolff ,  Maheswaran Surendra

发明人： Gary S. Selwyn ,  Manoj Dalvie ,  C. Richard Guarnieri ,  James J. McGill ,  Gary W. Rubolff ,  Maheswaran Surendra

IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/683 ,  C23C14/50 ,  C23C16/00 ,  C23F1/02

CPC分类号： H01J37/32623 ,  H01J37/32532 ,  H01J37/32697 ,  H01L21/6831

摘要： A device for reducing plasma irregularities includes an electrode assembly capable of applying an electric potential to said plasma. The electrode assembly includes a portion for reducing the plasma irregularities. The portion which reduces the plasma irregularities includes alternately a buried portion which is capable of altering the potential within the buried element, or else a conditioned portion of the surface which controls reflectivity and/or emissivity of portions of a surface of the electrode assembly differently.

摘要翻译： 用于减小等离子体不规则的装置包括能够对所述等离子体施加电位的电极组件。 电极组件包括用于减小等离子体不规则的部分。 减少等离子体不规则的部分交替地包括能够改变掩埋元件内的电位的掩埋部分，或者表面的调节部分，其控制电极组件的表面的部分的反射率和/或发射率不同。

公开(公告)号：US07923786B2

公开(公告)日：2011-04-12

申请号：US11871249

申请日：2007-10-12

申请人： An L. Steegen ,  Maheswaran Surendra ,  Hsing-Jen Wann ,  Ying Zhang ,  Franz Zach ,  Robert Wong

发明人： An L. Steegen ,  Maheswaran Surendra ,  Hsing-Jen Wann ,  Ying Zhang ,  Franz Zach ,  Robert Wong

IPC分类号： H01L21/70

CPC分类号： H01L29/66651 ,  H01L21/823481 ,  H01L21/823878 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0653 ,  H01L29/66772

摘要： A first aspect of the present invention is a method of forming an isolation structure including: (a) providing a semiconductor substrate; (b) forming a buried N-doped region in the substrate; (c) forming a vertical trench in the substrate, the trench extending into the N-doped region; (d) removing the N-doped region to form a lateral trench communicating with and extending perpendicular to the vertical trench; and (e) at least partially filling the lateral trench and filling the vertical trench with one or more insulating materials.

摘要翻译： 本发明的第一方面是一种形成隔离结构的方法，包括：（a）提供半导体衬底; （b）在衬底中形成掩埋的N掺杂区域; （c）在所述衬底中形成垂直沟槽，所述沟槽延伸到所述N掺杂区域中; （d）去除所述N掺杂区域以形成与所述垂直沟槽连通并垂直于所述垂直沟槽延伸的横向沟槽; 和（e）至少部分地填充横向沟槽并用一种或多种绝缘材料填充垂直沟槽。