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45 条记录 (耗时 0.032 秒)

    Voltage tunable coplanar phase shifters with a conductive dome structure
    41.
    发明授权
    Voltage tunable coplanar phase shifters with a conductive dome structure 有权
    具有导电圆顶结构的电压可调共面移相器

    公开(公告)号：US06954118B2

    公开(公告)日：2005-10-11

    申请号：US10646018

    申请日：2003-08-22

    申请人： Andrey Kozyrev ,  Louise Sengupta ,  Youngfei Zhu

    发明人： Andrey Kozyrev ,  Louise Sengupta ,  Youngfei Zhu

    IPC分类号： H01P1/18 ,  H01P3/02 ,  H01P5/08

    CPC分类号： H01P1/181

    摘要： A phase shifter includes a substrate, a tunable dielectric film having a dielectric constant between 70 to 600, a tuning range of 20 to 60%, and a loss tangent between 0.008 to 0.03 at K and Ka bands positioned on a surface of the substrate, a coplanar waveguide positioned on a surface of the tunable dielectric film opposite the substrate, an input for coupling a radio frequency signal to the coplanar waveguide, an output for receiving the radio frequency signal from the coplanar waveguide, and a connection for applying a control voltage to the tunable dielectric film. A reflective termination coplanar waveguide phase shifter including a substrate, a tunable dielectric film having a dielectric constant between 70 to 600, a tuning range of 20 to 60%, and a loss tangent between 0.008 to 0.03 at K and Ka bands positioned on a surface of the substrate, first and second open ended coplanar waveguides positioned on a surface of the tunable dielectric film opposite the substrate, microstrip line for coupling a radio frequency signal to and from the first and second coplanar waveguides, and a connection for applying a control voltage to the tunable dielectric film.

    摘要翻译： 移相器包括基板，介电常数在70至600之间的调谐电介质膜，20至60％的调谐范围以及位于基板表面上的K和Ka波段的0.008至0.03之间的损耗角正切， 位于与衬底相对的可调电介质膜的表面上的共面波导，用于将射频信号耦合到共面波导的输入端，用于从共面波导接收射频信号的输出端以及用于施加控制电压的连接 到可调电介质膜。 一种反射式终端共面波导相移器，包括基底，介电常数在70至600之间的可调电介质膜，调谐范围为20至60％，损耗角正切为0.008至0.03，位于表面的K和Ka波段 位于可调电介质膜的与衬底相对的表面上的第一和第二开口共面波导，用于将射频信号耦合到第一和第二共面波导的微带线以及用于施加控制电压的连接 到可调电介质膜。

    Voltage tunable coplanar waveguide phase shifters
    43.
    发明授权
    Voltage tunable coplanar waveguide phase shifters 有权
    电压可调共面波导相移器

    公开(公告)号：US06646522B1

    公开(公告)日：2003-11-11

    申请号：US09644019

    申请日：2000-08-22

    申请人： Andrey Kozyrev ,  Louise Sengupta ,  Youngfei Zhu

    发明人： Andrey Kozyrev ,  Louise Sengupta ,  Youngfei Zhu

    IPC分类号： H01P118

    CPC分类号： H01P1/181

    摘要： A phase shifter includes a substrate, a tunable dielectric film having a dielectric constant between 70 to 600, a tuning range of 20 to 60%, and a loss tangent between 0.008 to 0.03 at K and Ka bands positioned on a surface of the substrate, a coplanar waveguide positioned on a surface of the tunable dielectric film opposite the substrate, an input for coupling a radio frequency signal to the coplanar waveguide, an output for receiving the radio frequency signal from the coplanar waveguide, and a connection for applying a control voltage to the tunable dielectric film. A reflective termination coplanar waveguide phase shifter including a substrate, a tunable dielectric film having a dielectric constant between 70 to 600, a tuning range of 20 to 60%, and a loss tangent between 0.008 to 0.03 at K and Ka bands positioned on a surface of the substrate, first and second open ended coplanar waveguides positioned on a surface of the tunable dielectric film opposite the substrate, microstrip line for coupling a radio frequency signal to and from the first and second coplanar waveguides, and a connection for applying a control voltage to the tunable dielectric film.

    摘要翻译： 移相器包括基板，介电常数在70至600之间的调谐电介质膜，20至60％的调谐范围以及位于基板表面上的K和Ka波段的0.008至0.03之间的损耗角正切， 位于与衬底相对的可调电介质膜的表面上的共面波导，用于将射频信号耦合到共面波导的输入端，用于从共面波导接收射频信号的输出端以及用于施加控制电压的连接 到可调电介质膜。 一种反射式终端共面波导相移器，包括基底，介电常数在70至600之间的可调电介质膜，调谐范围为20至60％，损耗角正切为0.008至0.03，位于表面的K和Ka波段 位于可调电介质膜的与衬底相对的表面上的第一和第二开口共面波导，用于将射频信号耦合到第一和第二共面波导的微带线以及用于施加控制电压的连接 到可调电介质膜。

    Ceramic ferroelectric composite material-BSTO-ZnO
    45.
    发明授权
    Ceramic ferroelectric composite material-BSTO-ZnO 失效
    陶瓷铁电复合材料-BSTO-ZnO

    公开(公告)号：US5635433A

    公开(公告)日：1997-06-03

    申请号：US528626

    申请日：1995-09-11

    申请人： Louise Sengupta

    发明人： Louise Sengupta

    IPC分类号： C04B35/453 ,  C04B35/465 ,  C04B35/468 ,  C04B35/47

    CPC分类号： C04B35/453 ,  C04B35/465

    摘要： A novel ceramic ferroelectric material having a high dielectric constant, aow loss tangent, a low threshold voltage, a high nonlinear voltage exponent and a high tunability. The material is a composite comprising Barium Strontium Titanate (BSTO) and zinc oxide (ZnO). The preferred composite is represented by Ba.sub.1-x Sr.sub.x TiO.sub.3 --ZnO, wherein x is greater than 0.00, but less than or equal to 0.75, and wherein the percent weight ratio between BSTO and ZnO ranges from approximately 99%-50% and 1%-50% respectively. The novel materials possess superior electronic properties, and they may be employed in multilayer capacitors, capacitor-varistors, non-volatile computer memory or phased array antenna systems.

    摘要翻译： 具有高介电常数，低损耗正切，低阈值电压，高非线性电压指数和高可调性的新型陶瓷铁电材料。 该材料是包含钛酸锶钡（BSTO）和氧化锌（ZnO）的复合材料。 优选的复合材料由Ba1-xSrxTiO3-ZnO表示，其中x大于0.00，但小于或等于0.75，并且其中BSTO和ZnO之间的百分比重量比范围为约99％-50％和1％-50 ％ 分别。 新型材料具有优越的电子性能，可用于多层电容器，电容器 - 变阻器，非易失性计算机存储器或相控阵天线系统。