公开(公告)号：US06765821B2

公开(公告)日：2004-07-20

申请号：US10662533

申请日：2003-09-16

申请人： Yoshiaki Saito ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Minoru Amano

发明人： Yoshiaki Saito ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Minoru Amano

IPC分类号： G11C1114

CPC分类号： G11C11/15

摘要： There are provided at least one wire, a magnetoresistive effect element having a storage layer whose magnetization direction varies according to a current magnetic field generated by causing a current to flow in the wire, and first yokes provided so as to be spaced from at least one pair of opposed side faces of the magnetoresistive effect element to form a magnetic circuit in cooperation with the magnetoresistive effect element when a current is caused to flow in the wire. Each of the first yokes has at least two soft magnetic layers which are stacked via a non-magnetic layer.

摘要翻译： 提供了至少一根导线，一个磁阻效应元件，其具有存储层，其磁化方向根据通过使电流在线中流动而产生的电流磁场而变化，并且第一磁轭设置成与至少一个 磁阻效应元件的一对相对的侧面，当电流在电线中流动时与磁阻效应元件协同地形成磁路。 每个第一轭具有至少两个通过非磁性层堆叠的软磁性层。

公开(公告)号：US07266011B2

公开(公告)日：2007-09-04

申请号：US11368496

申请日：2006-03-07

申请人： Minoru Amano ,  Tatsuya Kishi ,  Sumio Ikegawa ,  Yoshiaki Saito ,  Hiroaki Yoda

发明人： Minoru Amano ,  Tatsuya Kishi ,  Sumio Ikegawa ,  Yoshiaki Saito ,  Hiroaki Yoda

IPC分类号： G11C11/00

CPC分类号： G11C11/15

摘要： The magnetic memory includes a plurality of memory cells, each memory cell including: at least one writing wire; at least one data storage portion, provided on at least one portion of an outer periphery of the writing wire, which comprises a ferromagnetic material whose magnetization direction can be inverted by causing a current to flow in the writing wire; and at least one magneto-resistance effect element, disposed in the vicinity of the data storage portion, which senses the magnetization direction of the data storage portion.

摘要翻译： 磁存储器包括多个存储单元，每个存储单元包括：至少一个写入线; 至少一个数据存储部分，设置在所述书写线的外周的至少一部分上，所述至少一个数据存储部分包括铁磁材料，所述铁磁材料的磁化方向可以通过使电流在所述书写线中流动而被反转; 以及设置在所述数据存储部附近的至少一个感应所述数据存储部的磁化方向的磁阻效应元件。

公开(公告)号：US07038939B2

公开(公告)日：2006-05-02

申请号：US10696000

申请日：2003-10-30

申请人： Minoru Amano ,  Tatsuya Kishi ,  Sumio Ikegawa ,  Yoshiaki Saito ,  Hiroaki Yoda

发明人： Minoru Amano ,  Tatsuya Kishi ,  Sumio Ikegawa ,  Yoshiaki Saito ,  Hiroaki Yoda

IPC分类号： G11C11/00

CPC分类号： G11C11/15

摘要： The magnetic memory includes a plurality of memory cells, each memory cell including: at least one writing wire; at least one data storage portion, provided on at least one portion of an outer periphery of the writing wire, which comprises a ferromagnetic material whose magnetization direction can be inverted by causing a current to flow in the writing wire; and at least one magneto-resistance effect element, disposed in the vicinity of the data storage portion, which senses the magnetization direction of the data storage portion.

摘要翻译： 磁存储器包括多个存储单元，每个存储单元包括：至少一个写入线; 至少一个数据存储部分，设置在所述书写线的外周的至少一部分上，所述至少一个数据存储部分包括铁磁材料，所述铁磁材料的磁化方向可以通过使电流在所述书写线中流动而被反转; 以及设置在所述数据存储部附近的至少一个感应所述数据存储部的磁化方向的磁阻效应元件。

公开(公告)号：US07041603B2

公开(公告)日：2006-05-09

申请号：US10396435

申请日：2003-03-26

申请人： Minoru Amano ,  Tatsuya Kishi ,  Yoshiaki Saito ,  Tomomasa Ueda ,  Hiroaki Yoda

发明人： Minoru Amano ,  Tatsuya Kishi ,  Yoshiaki Saito ,  Tomomasa Ueda ,  Hiroaki Yoda

IPC分类号： H01L21/302

CPC分类号： G11C11/15 ,  Y10T29/49021

摘要： There is provided a magnetic memory device which has a small switching current for a writing line and which has a small variation therein. A method for producing such a magnetic memory device includes: forming a magnetoresistive effect element; forming a first insulating film so as to cover the magnetoresistive effect element; forming a coating film so as to cover the first insulating film; exposing a top face of the magnetoresistive effect element; forming an upper writing line on the magnetoresistive effect element; exposing the first insulating film on a side portion of the magnetoresistive effect element by removing a part or all of the coating film; and forming a yoke structural member so as to cover at least a side portion of the upper writing line and so as to contact the exposed first insulating film on the side portion of the magnetoresistive effect element.

公开(公告)号：US06522573B2

公开(公告)日：2003-02-18

申请号：US09893612

申请日：2001-06-29

申请人： Yoshiaki Saito ,  Kentaro Nakajima ,  Minoru Amano

发明人： Yoshiaki Saito ,  Kentaro Nakajima ,  Minoru Amano

IPC分类号： G11C1100

CPC分类号： H01L27/224 ,  B82Y10/00 ,  G11C11/15

摘要： According to the present invention, there is provided a solid-state magnetic memory including a semiconductor substrate, a ferromagnetic tunnel junction element facing the semiconductor substrate, first and second wirings sandwiching the ferromagnetic tunnel junction elements from both sides thereof, a third wiring facing the ferromagnetic tunnel junction element, and a diode at least part of which is formed in a surface region of the semiconductor substrate.

摘要翻译： 根据本发明，提供了一种包括半导体衬底，面向半导体衬底的铁磁隧道结元件的固态磁存储器，从其两侧将铁磁隧道结元件夹在中间的第一和第二配线，面向 铁磁隧道结元件，以及二极管，其至少一部分形成在半导体衬底的表面区域中。

公开(公告)号：US06949779B2

公开(公告)日：2005-09-27

申请号：US10653098

申请日：2003-09-03

申请人： Tadashi Kai ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Yoshiaki Saito

发明人： Tadashi Kai ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Yoshiaki Saito

IPC分类号： G01R33/09 ,  G11B5/39 ,  G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L29/76

CPC分类号： G11C11/15 ,  G11C11/16 ,  Y10T428/24917

摘要： There are provided a first reference layer, in which a direction of magnetization is fixed, and a storage layer including a main body, in which a length in an easy magnetization axis direction is longer than a length in a hard magnetization axis direction, and a projecting portion provided to a central portion of the main body in the hard magnetization axis direction, a direction of magnetization of the storage layer being changeable in accordance with an external magnetic field.

公开(公告)号：US07470963B2

公开(公告)日：2008-12-30

申请号：US11213869

申请日：2005-08-30

申请人： Tadashi Kai ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Yoshiaki Saito

发明人： Tadashi Kai ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Yoshiaki Saito

IPC分类号： H01L21/8246

CPC分类号： G11C11/15 ,  G11C11/16 ,  Y10T428/24917

摘要： There are provided a first reference layer, in which a direction of magnetization is fixed, and a storage layer including a main body, in which a length in an easy magnetization axis direction is longer than a length in a hard magnetization axis direction, and a projecting portion provided to a central portion of the main body in the hard magnetization axis direction, a direction of magnetization of the storage layer being changeable in accordance with an external magnetic field.

摘要翻译： 提供了固定有磁化方向的第一参考层和容易磁化轴方向的长度比硬磁化轴方向的长度长的主体的存储层，以及 在硬磁化轴方向上设置在主体的中心部的突出部，存储层的磁化方向根据外部磁场而变化。

公开(公告)号：US20050280043A1

公开(公告)日：2005-12-22

申请号：US11213869

申请日：2005-08-30

申请人： Tadashi Kai ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Yoshiaki Saito

发明人： Tadashi Kai ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Yoshiaki Saito

IPC分类号： G01R33/09 ,  G11B5/39 ,  G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L27/148

CPC分类号： G11C11/15 ,  G11C11/16 ,  Y10T428/24917

摘要： There are provided a first reference layer, in which a direction of magnetization is fixed, and a storage layer including a main body, in which a length in an easy magnetization axis direction is longer than a length in a hard magnetization axis direction, and a projecting portion provided to a central portion of the main body in the hard magnetization axis direction, a direction of magnetization of the storage layer being changeable in accordance with an external magnetic field.

摘要翻译： 提供了固定有磁化方向的第一参考层和容易磁化轴方向的长度比硬磁化轴方向的长度长的主体的存储层，以及 在硬磁化轴方向上设置在主体的中心部的突出部，存储层的磁化方向根据外部磁场而变化。

公开(公告)号：US08139403B2

公开(公告)日：2012-03-20

申请号：US12885833

申请日：2010-09-20

申请人： Tomoaki Inokuchi ,  Takao Marukame ,  Mizue Ishikawa ,  Hideyuki Sugiyama ,  Hisanori Aikawa ,  Masahiko Nakayama ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Yoshiaki Saito

发明人： Tomoaki Inokuchi ,  Takao Marukame ,  Mizue Ishikawa ,  Hideyuki Sugiyama ,  Hisanori Aikawa ,  Masahiko Nakayama ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Yoshiaki Saito

IPC分类号： G11C11/15 ,  G11C29/82

CPC分类号： H01L29/66984 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/1677 ,  G11C11/1697 ,  H01L27/224 ,  H01L43/08

摘要： Certain embodiments provide a spin memory including a memory cell including a ferromagnetic stacked film that has a stacked structure in which a first ferromagnetic layer, a first nonmagnetic layer, a second ferromagnetic layer, a second nonmagnetic layer, and a third ferromagnetic layer are stacked in this order or reverse order, the third ferromagnetic layer and the second ferromagnetic layer being antiferromagnetically exchange-coupled via the second nonmagnetic layer. The ferromagnetic stacked film includes a current path in which a first and second write currents flow from the first ferromagnetic layer to the third ferromagnetic layer to write a first and second magnetization states into the first ferromagnetic layer respectively, and the second write current is higher than the first write current.

摘要翻译： 某些实施例提供一种自旋存储器，其包括一个存储单元，该存储单元包括一个具有层叠结构的铁磁层叠膜，其中第一铁磁层，第一非磁性层，第二铁磁层，第二非磁性层和第三铁磁层堆叠在其中 该顺序或反向顺序，第三铁磁层和第二铁磁层经由第二非磁性层反铁磁交换耦合。 铁磁层叠膜包括电流路径，其中第一和第二写入电流从第一铁磁层流向第三铁磁层，以将第一和第二磁化状态分别写入第一铁磁层，并且第二写入电流高于 第一次写入电流。

公开(公告)号：US20110228596A1

公开(公告)日：2011-09-22

申请号：US12885833

申请日：2010-09-20

申请人： Tomoaki Inokuchi ,  Takao Marukame ,  Mizue Ishikawa ,  Hideyuki Sugiyama ,  Hisanori Aikawa ,  Masahiko Nakayama ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Yoshiaki Saito

发明人： Tomoaki Inokuchi ,  Takao Marukame ,  Mizue Ishikawa ,  Hideyuki Sugiyama ,  Hisanori Aikawa ,  Masahiko Nakayama ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Yoshiaki Saito

IPC分类号： G11C11/15 ,  H01L29/82

CPC分类号： H01L29/66984 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/1677 ,  G11C11/1697 ,  H01L27/224 ,  H01L43/08

摘要： Certain embodiments provide a spin memory including a memory cell including a ferromagnetic stacked film that has a stacked structure in which a first ferromagnetic layer, a first nonmagnetic layer, a second ferromagnetic layer, a second nonmagnetic layer, and a third ferromagnetic layer are stacked in this order or reverse order, the third ferromagnetic layer and the second ferromagnetic layer being antiferromagnetically exchange-coupled via the second nonmagnetic layer. The ferromagnetic stacked film includes a current path in which a first and second write currents flow from the first ferromagnetic layer to the third ferromagnetic layer to write a first and second magnetization states into the first ferromagnetic layer respectively, and the second write current is higher than the first write current.

摘要翻译： 某些实施例提供一种自旋存储器，其包括一个存储单元，该存储单元包括一个具有层叠结构的铁磁层叠膜，其中第一铁磁层，第一非磁性层，第二铁磁层，第二非磁性层和第三铁磁层堆叠在其中 该顺序或反向顺序，第三铁磁层和第二铁磁层经由第二非磁性层反铁磁交换耦合。 铁磁层叠膜包括电流路径，其中第一和第二写入电流从第一铁磁层流向第三铁磁层，以将第一和第二磁化状态分别写入第一铁磁层，并且第二写入电流高于 第一次写入电流。