公开(公告)号：US20060276510A1

公开(公告)日：2006-12-07

申请号：US11396621

申请日：2006-04-04

申请人： Susan Abu-Shakra ,  Julian Gray ,  Yoshiharu Yamanishi ,  Nobuyuki Mori

发明人： Susan Abu-Shakra ,  Julian Gray ,  Yoshiharu Yamanishi ,  Nobuyuki Mori

IPC分类号： A61K31/444

CPC分类号： A61K31/4412 ,  A61K31/444 ,  A61K31/445 ,  A61K2300/00

摘要： The invention provides methods for treating and/or preventing headaches by administering to patients therapeutically effective amounts of 1,2-dihydropyridine compounds, and, optionally, cholinesterase inhibitors and/or anti-migraine agents. The headaches may be primary headaches, such as migraines, or secondary headaches. The invention also provides combinations, commercial packages, and pharmaceutical compositions comprising therapeutically effective amounts of 1,2-dihydropyridine compounds and, optionally, cholinesterase inhibitors and/or anti-migraine agents. The 1,2-dihydropyridine compound may be, for example, 3-(2-cyanophenyl)-5-(2-pyridyl)-1-phenyl-1,2-dihydropyridin-2-one. The cholinesterase inhibitor may be, for example, 1-benzyl-4-((5,6-dimethoxy-1-indanon)-2-yl)methylpiperidine.

摘要翻译： 本发明提供了通过向患者施用治疗有效量的1,2-二氢吡啶化合物和任选的胆碱酯酶抑制剂和/或抗偏头痛药物来治疗和/或预防头痛的方法。 头痛可能是原发性头痛，如偏头痛或继发性头痛。 本发明还提供了包含治疗有效量的1,2-二氢吡啶化合物和任选的胆碱酯酶抑制剂和/或抗偏头痛药物的组合，商业包装和药物组合物。 1,2-二氢吡啶化合物可以是例如3-（2-氰基苯基）-5-（2-吡啶基）-1-苯基-1,2-二氢吡啶-2-酮。 胆碱酯酶抑制剂可以是例如1-苄基-4 - （（5,6-二甲氧基-1-茚满酮）-2-基）甲基哌啶。

公开(公告)号：US20060270709A1

公开(公告)日：2006-11-30

申请号：US11396555

申请日：2006-04-04

申请人： Julian Gray ,  Yoshiharu Yamanishi ,  Nobuyuki Mori ,  Scott Fields

发明人： Julian Gray ,  Yoshiharu Yamanishi ,  Nobuyuki Mori ,  Scott Fields

IPC分类号： A61K31/445 ,  A61K31/444

CPC分类号： A61K31/4412 ,  A61K31/444 ,  A61K31/445 ,  A61K2300/00

摘要： The invention provides methods for treating and/or preventing cognitive impairments, dementia, or neurodegenerative diseases and disorders (e.g., Alzheimer's disease, Parkinson's disease, Huntington's disease, amyotrophic lateral sclerosis) in patients by administering therapeutically effective amounts of an AMPA receptor antagonist (e.g., 1,2-dihydropyridine compounds) and therapeutically effective amounts of nootropics (e.g., cholinesterase inhibitors) to patients. The invention also provides combinations, commercial packages, and pharmaceutical compositions comprising therapeutically effective amounts of AMPA receptor antagonists (e.g., 1,2-dihydropyridine compounds) and therapeutically effective amounts nootropics (e.g., cholinesterase inhibitors). The 1,2-dihydropyridine compound may be, for example, 3-(2-cyanophenyl)-5-(2-pyridyl)-1-phenyl-1,2-dihydropyridin-2-one. The cholinesterase inhibitor may be, for example, donepezil.

摘要翻译： 本发明提供了通过施用治疗有效量的AMPA受体拮抗剂（例如，治疗和/或预防）的方法来治疗和/或预防患者的认知障碍，痴呆或神经变性疾病和障碍（例如，阿尔茨海默氏病，帕金森病，亨廷顿舞蹈病，肌萎缩性侧索硬化） ，1,2-二氢吡啶化合物）和治疗有效量的益智酸（例如胆碱酯酶抑制剂）给患者。 本发明还提供了包含治疗有效量的AMPA受体拮抗剂（例如1,2-二氢吡啶化合物）和治疗有效量的精神病药（例如胆碱酯酶抑制剂）的组合，商业包装和药物组合物。 1,2-二氢吡啶化合物可以是例如3-（2-氰基苯基）-5-（2-吡啶基）-1-苯基-1,2-二氢吡啶-2-酮。 胆碱酯酶抑制剂可以是例如多奈哌齐。

公开(公告)号：US20060113011A1

公开(公告)日：2006-06-01

申请号：US11284919

申请日：2005-11-23

申请人： Mutsumi Tanida ,  Nobuyuki Mori ,  Keiichi Nakamura

发明人： Mutsumi Tanida ,  Nobuyuki Mori ,  Keiichi Nakamura

IPC分类号： C21D9/08 ,  C22C38/24

CPC分类号： C21D9/08 ,  C21D2211/008

摘要： A martensitic stainless steel pipe, which comprises specified quantities of C, Si, Mn, P, S, Cr, Ni, Al, N, Cu, Ti, V, Mo, Nb, B and Ca, and the balance being Fe and impurities, has satisfactory toughness at a high strength of 650 MPa or more by yield strength and also excellent hot workability. Therefore, it can be used as a high-strength martensitic stainless steel pipe for carbon dioxide gas corrosion resistant use, to be used in oil and/or gas well environments containing no hydrogen sulfide but carbon dioxide gas. This high-strength martensitic stainless steel pipe is an inexpensive martensitic stainless steel pipe, which does not require an addition of large quantities of expensive elements such as Ni and Mo, and moreover does not require the control of the content of P to a value less than 0.010% by mass.

摘要翻译： 马氏体不锈钢管，其含有规定量的C，Si，Mn，P，S，Cr，Ni，Al，N，Cu，Ti，V，Mo，Nb，B和Ca，余量为Fe和杂质 在650MPa以上的高强度下，通过屈服强度和热加工性优异，具有令人满意的韧性。 因此，可用作耐高温二氧化碳气体的高强度马氏体不锈钢管，用于不含硫化氢或二氧化碳气体的油井和/或气井环境中。 这种高强度马氏体不锈钢管是廉价的马氏体不锈钢管，其不需要添加大量昂贵的元素如Ni和Mo，而且不需要将P的含量控制在较小的值 大于0.010质量％。

公开(公告)号：US09181610B2

公开(公告)日：2015-11-10

申请号：US12934241

申请日：2008-12-15

申请人： Nobuyuki Mori ,  Akihiro Sakamoto

发明人： Nobuyuki Mori ,  Akihiro Sakamoto

IPC分类号： C21D9/08 ,  F28F7/00 ,  C21D1/00 ,  C22C38/00 ,  C22C38/18 ,  C22C38/54 ,  C21D1/18 ,  F27D9/00 ,  C22C38/02 ,  C22C38/04

CPC分类号： C22C38/18 ,  C21D1/00 ,  C21D9/08 ,  C21D9/085 ,  C21D2211/008 ,  C22C38/02 ,  C22C38/04 ,  C22C38/54

摘要： An object of the present invention is to provide air cooling equipment for a heat treatment process for a martensitic stainless steel pipe, which is capable of shortening the time required for the heat treatment process by enhancing the cooling efficiency at the time when the inner surface of steel pipe is air cooled in the heat treatment ent process.Air cooling equipment 100 for a heat treatment process for a martensitic stainless steel pipe P in accordance with the present invention comprises: a conveying device 10 for intermittently conveying the steel pipe P in the direction substantially at right angles to the longitudinal direction of the steel pipe P; and an air cooling device 20 provided with a nozzle 21 for spraying air Bi toward the inner surface of the steel pipe P, the nozzle 21 being arranged along the longitudinal direction of the steel pipe P at a stop position of the steel pipe P intermittently conveyed by the conveying device 10 so as to face to an end of the steel pipe P.

摘要翻译： 本发明的目的是提供一种用于马氏体不锈钢管的热处理工艺的空气冷却设备，其能够通过提高热处理工艺的内表面时的冷却效率来缩短热处理工艺所需的时间 钢管在热处理工艺中进行空气冷却。 用于根据本发明的马氏体不锈钢管P的热处理工艺的空气冷却设备100包括：输送装置10，用于沿钢管的纵向方向基本上直角的方向间歇地输送钢管P. P; 以及空气冷却装置20，其设置有用于向钢管P的内表面喷射空气Bi的喷嘴21，喷嘴21沿着钢管P的纵向方向布置在钢管P的停止位置，间歇地传送 通过输送装置10与钢管P的端部相对。

公开(公告)号：US08456462B2

公开(公告)日：2013-06-04

申请号：US13020523

申请日：2011-02-03

申请人： Makoto Kohno ,  Nobuyuki Mori ,  Seiichi Mizukoshi

发明人： Makoto Kohno ,  Nobuyuki Mori ,  Seiichi Mizukoshi

IPC分类号： G09G5/00

CPC分类号： G09G3/3233 ,  G09G3/2033 ,  G09G3/2081 ,  G09G2300/0842 ,  G09G2310/0251 ,  G09G2310/0262 ,  G09G2320/0233 ,  G09G2320/0252 ,  G09G2320/0261 ,  G09G2320/0266

摘要： Display unevenness is suppressed. A display device includes pixels (22) arranged in matrix, each including a current-driven type light emitting element (EL) and a drive transistor (Tr3) for supplying a current to the current-driven type light emitting element (EL). The current-driven type light emitting element (EL) is driven by dividing each frame period into a plurality of sub-frame periods for lighting time. The drive transistor is controlled under current write driving using two write currents having a ratio of 1:1/2N and a sum of the two write currents.

摘要翻译： 显示不均匀被抑制。 显示装置包括以矩阵形式布置的像素（22），每个包括用于向电流驱动型发光元件（EL）提供电流的电流驱动型发光元件（EL）和驱动晶体管（Tr3）。 电流驱动型发光元件（EL）通过将每个帧周期分成用于点亮时间的多个子帧周期来驱动。 驱动晶体管在电流写入驱动下使用具有1：1 / 2N的比例和两个写入电流之和的两个写入电流进行控制。

公开(公告)号：US08416234B2

公开(公告)日：2013-04-09

申请号：US12393435

申请日：2009-02-26

申请人： Seiichi Mizukoshi ,  Makoto Kohno ,  Kouichi Onomura ,  Nobuyuki Mori

发明人： Seiichi Mizukoshi ,  Makoto Kohno ,  Kouichi Onomura ,  Nobuyuki Mori

IPC分类号： G09G5/00

CPC分类号： G09G3/3233 ,  G09G2320/0223 ,  G09G2320/0276 ,  G09G2320/0285 ,  G09G2320/043 ,  G09G2320/0673

摘要： To compensate for voltage drop on a power supply line. In a display device, pixel data is supplied to each of a plurality of pixels arranged in a matrix form and display is performed. Each pixel has a self-emissive element. A horizontal direction power supply line (horizontal direction PVDD) which supplies a power supply to each pixel is provided, and one end of the horizontal PVDD line is connected to a vertical power supply line (vertical PVDD line) that is connected to an external power supply terminal. Correction data corresponding to a voltage drop to the horizontal PVDD line due to a resistance in the vertical PVDD line is then obtained through a calculation based on pixel data, and the input pixel data is corrected using the correction data so as to reduce the influence of the voltage drop on the pixel current.

摘要翻译： 补偿电源线上的电压降。 在显示装置中，将像素数据提供给以矩阵形式布置的多个像素中的每一个，并执行显示。 每个像素具有自发射元件。 设置向每个像素供给电源的水平方向供电线（水平方向PVDD），并且水平PVDD线的一端连接到与外部电源连接的垂直电源线（垂直PVDD线） 供应终端。 然后通过基于像素数据的计算，获得对应于由于垂直PVDD线中的电阻而导致的对水平PVDD线的电压降的校正数据，并且使用校正数据来校正输入像素数据，以便减小 像素电流上的电压降。

公开(公告)号：US08294700B2

公开(公告)日：2012-10-23

申请号：US13020544

申请日：2011-02-03

申请人： Seiichi Mizukoshi ,  Nobuyuki Mori ,  Makoto Kohno

发明人： Seiichi Mizukoshi ,  Nobuyuki Mori ,  Makoto Kohno

IPC分类号： G09G3/30

CPC分类号： G09G3/3233 ,  G09G3/006 ,  G09G2300/0842 ,  G09G2300/0866 ,  G09G2310/0218 ,  G09G2320/0223 ,  G09G2320/0295 ,  G09G2320/043 ,  G09G2330/06

摘要： Noise on a current to be measured is removed. Horizontal power supply lines (PVDD) are arranged in a horizontal direction and supply a current to pixels in respective corresponding horizontal lines. A switch (8) connects a group of the horizontal power supply lines (PVDD) to a first power supply line (PVDDa) or a second power supply line (PVDDb) disposed outside a pixel region in a switchable manner. Only the horizontal power supply lines (PVDD) in a group to which a pixel to be measured belongs are supplied with power from the second power supply line (PVDDb) so as to measure a current of each pixel in the group, and a current flowing into a power source (PVDDa) connected to a group to which other pixels than the pixel to be measured belong is measured, to thereby calculate a pixel current based on a difference between the two measured currents.

摘要翻译： 去除待测电流的噪声。 水平电源线（PVDD）沿水平方向布置并且向相应的相应水平线中的像素提供电流。 开关（8）将一组水平电源线（PVDD）连接到以可切换的方式设置在像素区域外的第一电源线（PVDDa）或第二电源线（PVDDb）。 从第二电源线（PVDDb）仅供给要测量的像素所属的组中的水平电源线（PVDD）被供给电力，以便测量该组中的每个像素的电流，并且流过电流 测量与要测量的像素所属的其他像素所属的组连接的电源（PVDDa），从而基于两个测量电流之间的差来计算像素电流。

公开(公告)号：US20120097523A1

公开(公告)日：2012-04-26

申请号：US13266631

申请日：2010-04-27

申请人： Nobuyuki Mori ,  Hiroshi Yano ,  Toshiyuki Shiroishi ,  Takashi Ushida ,  Nobuhiro Shimizu ,  Noriyuki Takahashi ,  Toshihiro Mitsuzuka

发明人： Nobuyuki Mori ,  Hiroshi Yano ,  Toshiyuki Shiroishi ,  Takashi Ushida ,  Nobuhiro Shimizu ,  Noriyuki Takahashi ,  Toshihiro Mitsuzuka

IPC分类号： C01B33/037 ,  B01J19/08

CPC分类号： C01B33/037

摘要： [Objects] To improve productivity and reduce thermal energy consumption in manufacturing of high purity silicon as a raw material for metallurgical grade pure silicon.[Means to Solve]After conducting a first treatment of either removing boron by water-vapor added plasma arc heating or low-pressure oxygen plasma arc heating upon raw silicon contained in a hearth in a chamber to thereby putting the raw silicon into a high temperature molten state to thereby oxidizing and removing boron by evaporation, or removing phosphorus by electron beam irradiation to thereby putting the raw silicon into a high temperature molten state to thereby remove phosphorus by evaporation in an atmosphere suitable to the treatment; the atmosphere of the chamber is then changed to a vacuum atmosphere suitable to the remaining second treatment, while maintaining the silicon contained in the hearth in its molten state, and the second purification treatment is conducted; whereafter end(s) enriched in impurities is cut off by way of one-way coagulation method to obtain a high purity refined silicon ingot highly free from phosphorus, boron and other impurities.

摘要翻译： [对象]提高生产率，降低冶金级纯硅原料的高纯度硅制造中的热能消耗。 [解决方法]在室内的原料硅中，通过水蒸汽添加等离子体电弧加热或低压氧等离子体电弧加热进行第一次处理之后，将原料硅置于高温 从而通过蒸发氧化和除去硼，或通过电子束照射除去磷，从而将原料硅置于高温熔融状态，从而通过在适于处理的气氛中蒸发除去磷; 然后将室的气氛变成适合于剩余的第二处理的真空气氛，同时将包含在炉床中的硅保持在其熔融状态，并且进行第二净化处理; 然后通过单向凝结法切断富集杂质的末端，得到高度无磷，硼等杂质的高纯度精制硅锭。

公开(公告)号：US20110120691A1

公开(公告)日：2011-05-26

申请号：US12934241

申请日：2008-12-15

申请人： Nobuyuki Mori ,  Akihiro Sakamoto

发明人： Nobuyuki Mori ,  Akihiro Sakamoto

IPC分类号： F28F7/00

CPC分类号： C22C38/18 ,  C21D1/00 ,  C21D9/08 ,  C21D9/085 ,  C21D2211/008 ,  C22C38/02 ,  C22C38/04 ,  C22C38/54

摘要： An object of the present invention is to provide air cooling equipment for a heat treatment process for a martensitic stainless steel pipe, which is capable of shortening the time required for the heat treatment process by enhancing the cooling efficiency at the time when the inner surface of steel pipe is air cooled in the heat treatment ent process.Air cooling equipment 100 for a heat treatment process for a martensitic stainless steel pipe P in accordance with the present invention comprises: a conveying device 10 for intermittently conveying the steel pipe P in the direction substantially at right angles to the longitudinal direction of the steel pipe P; and an air cooling device 20 provided with a nozzle 21 for spraying air Bi toward the inner surface of the steel pipe P, the nozzle 21 being arranged along the longitudinal direction of the steel pipe P at a stop position of the steel pipe P intermittently conveyed by the conveying device 10 so as to face to an end of the steel pipe P.

摘要翻译： 本发明的目的是提供一种用于马氏体不锈钢管的热处理工艺的空气冷却设备，其能够通过提高热处理工艺的内表面时的冷却效率来缩短热处理工艺所需的时间 钢管在热处理工艺中进行空气冷却。 用于根据本发明的马氏体不锈钢管P的热处理工艺的空气冷却设备100包括：输送装置10，用于沿钢管的纵向方向大致直角的方向间歇地输送钢管P. P; 以及空气冷却装置20，其设置有用于向钢管P的内表面喷射空气Bi的喷嘴21，喷嘴21沿着钢管P的纵向方向布置在钢管P的停止位置，间歇地传送 通过输送装置10与钢管P的端部相对。

公开(公告)号：US20100213163A1

公开(公告)日：2010-08-26

申请号：US12389688

申请日：2009-02-20

申请人： Hisayoshi Watanabe ,  Toshiomi Yokoyama ,  Nobuyuki Mori ,  Akihiro Kaneko ,  Michitaka Nishiyama ,  Kenji Yokoyama

发明人： Hisayoshi Watanabe ,  Toshiomi Yokoyama ,  Nobuyuki Mori ,  Akihiro Kaneko ,  Michitaka Nishiyama ,  Kenji Yokoyama

IPC分类号： B44C1/22

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/3163 ,  Y10T29/49032

摘要： The present invention relates to a shaping method of a thin film layer and a manufacturing method of a perpendicular recording magnetic head using the same. In the thin film layer shaping method according to the present invention, since a second thin film of a lower etching rate is etched by a preliminary etching amount allowing for a difference between the etching rate of the second thin film and an etching rate of a first thin film in side-by-side relationship with each other, both the first and second thin films can be etched by the same etching amount through a subsequent etching step, so that the thin film layer can be shaped into a given shape. Thus, the surface of the thin film layer can be planarized.

摘要翻译： 本发明涉及薄膜层的成形方法和使用该薄膜层的垂直记录磁头的制造方法。 在根据本发明的薄膜层成形方法中，由于通过初步蚀刻量蚀刻蚀刻速率较低的第二薄膜，从而允许第二薄膜的蚀刻速率与第一薄膜的蚀刻速率之间的差异 薄膜彼此并排关系，通过后续的蚀刻步骤可以通过相同的蚀刻量来蚀刻第一和第二薄膜，使得薄膜层可以成形为给定的形状。 因此，可以平坦化薄膜层的表面。