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    PURIFICATION PROCESS FOR SEMICONDUCTING MONOMERS
    41.
    发明申请
    PURIFICATION PROCESS FOR SEMICONDUCTING MONOMERS 审中-公开
    半导体单体的纯化工艺

    公开(公告)号：US20100121004A1

    公开(公告)日：2010-05-13

    申请号：US12270088

    申请日：2008-11-13

    申请人： Yuning Li ,  Ping Liu ,  Yiliang Wu

    发明人： Yuning Li ,  Ping Liu ,  Yiliang Wu

    IPC分类号： C08F4/26 ,  C07D333/50 ,  C08F28/06

    CPC分类号： C07D333/50 ,  C08G61/126 ,  C08G2261/124 ,  C08G2261/1424 ,  C08G2261/3223 ,  C08G2261/3243 ,  C08G2261/43 ,  C08G2261/51 ,  C08G2261/92 ,  H01L51/0025

    摘要： Disclosed is a process for purifying monomers of Formula (II): wherein R1 and R2 are independently selected from alkyl, substituted alkyl, aryl, substituted aryl, alkoxy, substituted alkoxy, and halogen; and R′ is selected from hydrogen, alkyl, substituted alkyl, aryl, substituted aryl, alkoxy, substituted alkoxy, and halogen. After the monomer is synthesized, it is purified by column chromatography using neutral alumina and hexane as an eluent. The resulting product can also be further recrystallized using isopropanol, hexane, heptane, or toluene. Polymers formed from the purified monomer exhibit higher mobility and increased reproducibility of the mobility.

    摘要翻译： 公开了一种纯化式（II）单体的方法：其中R 1和R 2独立地选自烷基，取代的烷基，芳基，取代的芳基，烷氧基，取代的烷氧基和卤素; 并且R'选自氢，烷基，取代的烷基，芳基，取代的芳基，烷氧基，取代的烷氧基和卤素。 合成单体后，通过柱色谱纯化，使用中性氧化铝和己烷作为洗脱剂。 所得产物还可以使用异丙醇，己烷，庚烷或甲苯进一步重结晶。 由纯化单体形成的聚合物表现出更高的迁移率和增加迁移率的再现性。

    ORGANIC THIN FILM TRANSISTOR
    42.
    发明申请
    ORGANIC THIN FILM TRANSISTOR 有权
    有机薄膜晶体管

    公开(公告)号：US20090256138A1

    公开(公告)日：2009-10-15

    申请号：US12101942

    申请日：2008-04-11

    申请人： Yiliang Wu ,  Hualong Pan ,  Ping Liu ,  Yuning Li

    发明人： Yiliang Wu ,  Hualong Pan ,  Ping Liu ,  Yuning Li

    IPC分类号： H01L51/30 ,  H01L51/40

    CPC分类号： H01L21/02126 ,  H01L21/02282 ,  H01L21/3125 ,  H01L51/0036 ,  H01L51/0533

    摘要： Organic thin film transistors with improved mobility are disclosed. The semiconducting layer comprises a semiconductor material of Formula (I): wherein R1 and R2 are independently selected from alkyl, substituted alkyl, aryl, and substituted aryl; and R3 and R4 are independently selected from hydrogen, alkyl, substituted alkyl, aryl, and substituted aryl. A silanized interfacial layer is also present which has alkyl sidechains extending from its surface towards the semiconducting layer.

    摘要翻译： 公开了具有改进的移动性的有机薄膜晶体管。 半导体层包含式（I）的半导体材料：其中R1和R2独立地选自烷基，取代的烷基，芳基和取代的芳基; 并且R 3和R 4独立地选自氢，烷基，取代的烷基，芳基和取代的芳基。 还存在硅烷化界面层，其具有从其表面朝向半导体层延伸的烷基侧链。

    Poly[bis(ethynyl)heteroacene]s and electronic devices generated therefrom
    43.
    发明授权
    Poly[bis(ethynyl)heteroacene]s and electronic devices generated therefrom 有权
    聚[双（乙炔基）异亚丙基]和由其生成的电子器件

    公开(公告)号：US07449715B2

    公开(公告)日：2008-11-11

    申请号：US11399231

    申请日：2006-04-06

    申请人： Yuning Li ,  Ping Liu ,  Yiliang Wu ,  Beng S. Ong

    发明人： Yuning Li ,  Ping Liu ,  Yiliang Wu ,  Beng S. Ong

    IPC分类号： H01L29/08

    CPC分类号： H01L51/0074 ,  H01L51/0036 ,  H01L51/0073 ,  H01L51/0545

    摘要： An electronic device comprising a polymer of Formula or structure (I) wherein R1 is hydrogen, halogen, a suitable hydrocarbon, or a heteroatom containing group; R2 is hydrogen, a suitable hydrocarbon, a heteroatom containing group, or a halogen; R3 and R4 are independently a suitable hydrocarbon, hydrogen, a heteroatom containing group, or a halogen; Ar is an aromatic component; x, y, a, b, and c represent the number of groups or rings, respectively; Z represents sulfur, oxygen, selenium, or NR wherein R is hydrogen, alkyl, or aryl; and n represents the number of repeating units.

    摘要翻译： 一种包含式或其结构（I）的聚合物的电子器件，其中R 1是氢，卤素，合适的烃或含杂原子的基团; R 2是氢，适合的烃，含杂原子的基团或卤素; R 3和R 4独立地是合适的烃，氢，含杂原子的基团或卤素; Ar是芳香族成分; x，y，a，b和c分别表示基团或环的数目; Z表示硫，氧，硒或NR，其中R是氢，烷基或芳基; n表示重复单元的数量。

    POLYTHIOPHENES AND ELECTRONIC DEVICES COMPRISING THE SAME
    48.
    发明申请
    POLYTHIOPHENES AND ELECTRONIC DEVICES COMPRISING THE SAME 有权
    聚氧乙烯和包含该聚合物的电子器件

    公开(公告)号：US20100140555A1

    公开(公告)日：2010-06-10

    申请号：US12331794

    申请日：2008-12-10

    申请人： Ping Liu ,  Yiliang Wu ,  Yuning Li

    发明人： Ping Liu ,  Yiliang Wu ,  Yuning Li

    IPC分类号： C08G75/02 ,  H01B1/12

    CPC分类号： H01B1/127 ,  C08G61/126 ,  C08G2261/1412 ,  C08G2261/364 ,  C08G2261/51 ,  C08G2261/92 ,  H01L51/0036 ,  H01L51/0068 ,  H01L51/0558

    摘要： Disclosed are semiconducting polythiophenes comprising a repeating unit of Formula (A) or a copolythiophene of Formula (B): wherein A and B are each alkyl having from 1 to about 25 carbon atoms; and a, b, c, d, e, f, g, x, and y are as defined herein. These polythiophenes have high mobility and are soluble in common organic solvents, so that chlorinated solvents do not need to be used. They are useful for depositing semiconducting layers, particularly in organic thin-film transistors.

    摘要翻译： 公开了包含式（A）的重复单元或式（B）的共聚噻吩的半导体聚噻吩：其中A和B各自为具有1至约25个碳原子的烷基; 和a，b，c，d，e，f，g，x和y如本文所定义。 这些聚噻吩具有高迁移率并且可溶于普通有机溶剂，因此不需要使用氯化溶剂。 它们对于沉积半导体层是有用的，特别是在有机薄膜晶体管中。