-
公开(公告)号：US20090296075A1
公开(公告)日：2009-12-03
申请号：US12129448
申请日：2008-05-29
IPC分类号： G01N21/00
CPC分类号： G03F7/70633
摘要： An overlay error is determined using a diffraction based overlay target by generating a number of narrow band illumination beams that illuminate the overlay target. Each beam has a different range of wavelengths. Images of the overlay target are produced for each different range of wavelengths. An intensity value is then determined for each range of wavelengths. In an embodiment in which the overlay target includes a plurality of measurement pads, which may be illuminated and imaged simultaneously, an intensity value for each measurement pad in each image is determined. The intensity value may be determined statistically, such as by summing, finding the mean or median of the intensity values of pixels in the image. Spectra is then constructed using the determined intensity value, e.g., for each measurement pad. Using the constructed spectra, the overlay error may then be determined.
摘要翻译： 通过产生照亮覆盖目标的许多窄带照明光束，使用基于衍射的覆盖目标确定覆盖误差。 每个波束具有不同的波长范围。 为每个不同的波长范围产生覆盖目标的图像。 然后确定每个波长范围的强度值。 在其中覆盖目标包括可以同时照明和成像的多个测量焊盘的实施例中，确定每个图像中每个测量焊盘的强度值。 可以统计地确定强度值，例如通过求和，找到图像中的像素的强度值的平均值或中值。 然后使用确定的强度值构建光谱，例如，对于每个测量垫。 使用构造的光谱，可以确定覆盖误差。
-
公开(公告)号：US07615752B2
公开(公告)日：2009-11-10
申请号：US11361710
申请日：2006-02-24
申请人： Chris Raymond , Steve Hummel
发明人： Chris Raymond , Steve Hummel
IPC分类号： G01F23/00
CPC分类号： G01B11/0616 , G01B11/24 , G01B11/30 , G01N21/21 , G01N21/274 , G01N21/47 , G01N21/9501 , G01N21/956 , G01N23/2251 , G01N2021/4792 , G03F7/70625
摘要： Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.
-
公开(公告)号：US07502101B2
公开(公告)日：2009-03-10
申请号：US11361673
申请日：2006-02-24
申请人： Chris Raymond , Steve Hummel , Sean Liu
发明人： Chris Raymond , Steve Hummel , Sean Liu
IPC分类号： G01N21/00
CPC分类号： G01B11/0616 , G01B11/24 , G01B11/30 , G01N21/21 , G01N21/274 , G01N21/47 , G01N21/9501 , G01N21/956 , G01N23/2251 , G01N2021/4792 , G03F7/70625
摘要： Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.
摘要翻译： 散射计和使用散射测定法确定周期性微结构，伪周期结构以及特征尺寸小至100nm或更小的其它非常小的结构的几个参数的方法。 本发明的几个特定实施例在半导体工业中特别有用，以确定在微处理器，存储器件和其它半导体器件中形成的特征的宽度，深度，线边缘粗糙度，壁角度，膜厚度以及许多其它参数。 然而，本发明的散射仪和方法不限于半导体应用，并且可以在其它应用中同样适用。
-
公开(公告)号：US07450225B1
公开(公告)日：2008-11-11
申请号：US11735266
申请日：2007-04-13
申请人： Zhuan Liu , Yudong Hao , Ye Feng , Yongdong Liu
发明人： Zhuan Liu , Yudong Hao , Ye Feng , Yongdong Liu
CPC分类号： G01B11/0625
摘要： A metrology system performs optical metrology while holding a sample with an unknown focus offset. The measurements are corrected by fitting for the focus offset in a model regression analysis. Focus calibration is used to determine the optical response of the metrology device to the focus offset. The modeled data is adjusted based on the optical response to the focus offset and the model regression analysis fits for the focus offset as a variable parameter along with the sample characteristics that are to be measured. Once an adequate fit is determined, the values of the sample characteristics to be measured are reported. The adjusted modeled data may be stored in a library, or alternatively, modeled data may be adjusted in real-time.
摘要翻译： 测量系统执行光学测量，同时保持未知聚焦偏移的样本。 通过在模型回归分析中拟合聚焦偏移来校正测量值。 聚焦校准用于确定测量设备对焦偏移的光学响应。 基于对焦偏移的光学响应来调整建模数据，并且模型回归分析适合于将偏移量作为可变参数以及要测量的样本特征。 一旦确定了适当的拟合，就报告要测量的样品特性的值。 经调整的建模数据可以存储在库中，或者可以实时调整建模的数据。
-
公开(公告)号：US07446868B1
公开(公告)日：2008-11-04
申请号：US11528723
申请日：2006-09-26
CPC分类号： G01N21/6489
摘要： The invention relates to a method and apparatus for detecting defects in a semiconductor or silicon structure at room temperature, and in an efficient time, using photoluminescence. The invention employs the use of a high intensity beam of light preferably having a spot size between 0.1 mm 0.5 microns and a peak or average power density of 104-109 w/cm2 with a view to generating a high concentration of charge carriers, which charge characters detect defects in a semiconductor by interacting with same. These defects are visible by producing a photoluminescence image of the semiconductor. Several wavelengths may be selected to identify defects at a selective depth as well as confocal optics may be used.
摘要翻译： 本发明涉及一种用于在室温下和在有效时间内使用光致发光来检测半导体或硅结构中的缺陷的方法和装置。 本发明采用高强度光束，其优选地具有0.1mm×0.5微米的光点尺寸和10-4V的峰值或平均功率密度 以产生高浓度的电荷载体，这些电荷特性通过与半导体的相互作用来检测半导体中的缺陷。 通过产生半导体的光致发光图像可以看到这些缺陷。 可以选择几个波长来识别选择深度处的缺陷以及可以使用共焦光学器件。
-
46.发明授权Differential wavelength photoluminescence for non-contact measuring of contaminants and defects located below the surface of a wafer or other workpiece 有权用于非接触式测量污染物和位于晶片或其他工件表面下方的缺陷的差分光致发光公开(公告)号：US07446321B2
公开(公告)日：2008-11-04
申请号：US11427080
申请日：2006-06-28
CPC分类号： G01N21/6489 , G01N21/94 , G01N21/9501 , G01N21/9505 , G01N2021/646 , G01N2021/8867
摘要： A method for using photoluminescence to identify defects in a sub-surface region of a sample includes performing a first probe of the sample. A first data set, based on the first probe, is produced indicating defects located primarily in a surface layer of the sample. A second data set, based on a second probe, is produced indicating defects located in both the surface layer and a sub-surface region of the sample. The first data set is subtracted from the second data set to produce a third data set indicating defects located primarily in the sub-surface region of the sample. The first data set may optionally be normalized relative to the second data set before performing the subtraction. The first and second probes may advantageously be performed using a first laser and a second laser, respectively, having different wavelengths from each other.
摘要翻译： 使用光致发光来鉴定样品的子表面区域中的缺陷的方法包括执行样品的第一探针。 产生基于第一探针的第一数据集，指示主要位于样品的表面层中的缺陷。 产生基于第二探针的第二数据集，其指示位于样品的表面层和次表面区域中的缺陷。 从第二数据组中减去第一数据集以产生指示主要位于样本的子表面区域中的缺陷的第三数据集。 在执行减法之前，第一数据集可以可选地相对于第二数据集进行归一化。 第一和第二探针可以有利地使用分别具有不同波长的第一激光器和第二激光器来执行。
-
公开(公告)号：US07372565B1
公开(公告)日：2008-05-13
申请号：US11540990
申请日：2006-09-28
申请人： James M. Holden , William A. McGahan , Richard A. Yarussi , Pablo I. Rovira , Roger R. Lowe-Webb
发明人： James M. Holden , William A. McGahan , Richard A. Yarussi , Pablo I. Rovira , Roger R. Lowe-Webb
IPC分类号： G01J3/28
CPC分类号： G01N21/956 , G01N21/21 , G01N21/4788 , G01N21/4795
摘要： A normal incidence reflectometer includes a rotatable analyzer/polarizer for measurement of a diffracting structure. Relative rotation of the analyzer/polarizer with respect to the diffracting structure permits analysis of the diffracted radiation at multiple polarity orientations. A spectograph detects the intensity of the spectral components at different polarity orientations. Because the normal incidence reflectometer uses normally incident radiation and an analyzer/polarizer that rotates relative to the diffracting structure, or vice-versa, the orientation of the diffracting structure does not affect the accuracy of the measurement. Thus, the sample holding stage may use X, Y, and Z, as well as r-θ type movement and there is no requirement that the polarization orientation of the incident light be aligned with the grating of the diffraction structure. A non-linear multivariate regression process is used to adjust the parameters of an optical model, such as rigorous coupled-wave analysis, to provide a match with the measured data.
摘要翻译： 正常入射反射计包括用于测量衍射结构的可旋转分析器/偏振器。 分析器/偏振器相对于衍射结构的相对旋转允许以多极性取向分析衍射辐射。 分光镜检测不同极性取向的光谱分量的强度。 因为正常入射反射计使用正常入射的辐射和相对于衍射结构旋转的分析器/偏振器，反之亦然，衍射结构的取向不影响测量的精度。 因此，样品保持阶段可以使用X，Y和Z以及r-θ型运动，并且不要求入射光的偏振取向与衍射结构的光栅对准。 使用非线性多元回归过程来调整光学模型的参数，例如严格的耦合波分析，以提供与测量数据的匹配。
-
48.发明授权公开(公告)号：US07301623B1
公开(公告)日：2007-11-27
申请号：US10738190
申请日：2003-12-16
CPC分类号： H01L21/68742
摘要： A chuck that clamps a substrate to the top surface using, e.g., a vacuum, electrostatic force, or other appropriate means, includes a plurality of lift pins that can raise the substrate off the top surface of the chuck. The chuck may be used with a metrology device that measures the substrate using a first type of measurement, e.g., film thickness measurement, while the substrate is held flat, and measures the substrate using a second type of measurement, e.g., radius of curvature measurement, while the substrate is supported on the lift pins. The thickness and radius of curvature measurements may then be used to determine the stress on the substrate. The lift pins may include an aperture through which a vacuum is applied through the top surface of the lift pins to the bottom of the substrate to securely hold the substrate while moving.
摘要翻译： 使用例如真空，静电力或其他合适的方式将基板夹紧到顶表面的卡盘包括可以将基板从卡盘的顶表面上升起的多个提升销。 卡盘可以与测量装置一起使用，该测量装置使用第一类型的测量（例如膜厚度测量）来测量衬底，同时衬底保持平坦，并且使用第二类型的测量来测量衬底，例如曲率半径测量 而基板支撑在提升销上。 然后可以使用厚度和曲率半径测量来确定衬底上的应力。 提升销可以包括孔，通过该孔通过提升销的顶表面将真空施加到基板的底部，以在移动时牢固地保持基板。
-
公开(公告)号：US20070222991A1
公开(公告)日：2007-09-27
申请号：US11624666
申请日：2007-01-18
申请人： Blaine Spady , John Heaton , Robert Buchanan , Richard Yarussi
发明人： Blaine Spady , John Heaton , Robert Buchanan , Richard Yarussi
IPC分类号： G01B11/00
CPC分类号： G02B7/00
摘要： A metrology system includes a positioning system that produces linear and rotational motion between an imaging system and the wafer. The imaging system produces signals representing the image of the wafer in the field of view of the imaging system. A control system receives and processes the image signals, and generates corrected signals that compensate for rotational movement between the imaging system and the wafer. In response to the corrected signals, a monitor displays an image with the orientation of features on the wafer within the field of view unaffected by the rotational movement.
摘要翻译： 计量系统包括在成像系统和晶片之间产生线性和旋转运动的定位系统。 成像系统在成像系统的视野中产生表示晶片的图像的信号。 控制系统接收和处理图像信号，并产生补偿成像系统和晶片之间的旋转运动的校正信号。 响应于校正的信号，监视器在不受旋转运动影响的视场内显示具有晶片上的特征的取向的图像。
-
公开(公告)号：US06970255B1
公开(公告)日：2005-11-29
申请号：US10422232
申请日：2003-04-23
CPC分类号： G01D5/34707
摘要： An encoder includes a layer on the scale that has a thickness that varies as a function of position along the length of the scale. The position of the sensor head with respect to the scale may be determined by measuring the thickness of the layer or index of refraction, e.g., using a reflectometer, and converting the thickness to the lateral position. In one embodiment, the thickness of the layer is used to provide a rough position of the sensor head with respect to the scale and an alignment target that includes periodic patterns on both the sensor head and scale is used to provide a refined position.
摘要翻译： 编码器包括刻度上的层，其厚度随着刻度长度的位置而变化。 传感器头相对于刻度尺的位置可以通过测量层的厚度或折射率来确定，例如使用反射计，并将厚度转换成横向位置。 在一个实施例中，层的厚度用于提供传感器头相对于标尺的粗略位置，并且使用包括传感器头部和标尺上的周期性图案的对准目标来提供精细位置。
-
-
-
-
-
-
-
-
-
搜索结果
160 条记录 (耗时 0.026 秒)
