公开(公告)号：US3325254A

公开(公告)日：1967-06-13

申请号：US29850763

申请日：1963-07-29

Applicant: GIARDINI ARMANDO A ,  TYDINGS JOHN E

Inventor： GIARDINI ARMANDO A ,  TYDINGS JOHN E

IPC: B01J3/06

CPC classification number: B01J3/062 ,  B01J2203/0655 ,  B01J2203/068

公开(公告)号：US3303053A

公开(公告)日：1967-02-07

申请号：US26806663

申请日：1963-03-26

Applicant: GEN ELECTRIC

Inventor： STRONG HERBERT M ,  TUFT ROY E

IPC: B01J3/06

CPC classification number: B01J3/062 ,  B01J2203/061 ,  B01J2203/0655 ,  B01J2203/068 ,  Y10T428/24736 ,  Y10T428/24802 ,  Y10T428/30

公开(公告)号：US3125418A

公开(公告)日：1964-03-17

申请号：US3125418D

IPC: B01J3/06

CPC classification number: B01J3/062 ,  B01J2203/0655 ,  B01J2203/068 ,  C01B32/25 ,  Y10T428/2991 ,  Y10T428/31678

公开(公告)号：US3031269A

公开(公告)日：1962-04-24

申请号：US85578759

申请日：1959-11-27

Applicant: GEN ELECTRIC

Inventor： BOVENKERK HAROLD P

IPC: B01J3/06

CPC classification number: B01J3/067 ,  B01J3/062 ,  B01J3/065 ,  B01J2203/061 ,  B01J2203/0625 ,  B01J2203/0655 ,  B01J2203/068 ,  Y10S425/026 ,  Y10T117/1096

公开(公告)号：US2996763A

公开(公告)日：1961-08-22

申请号：US56258556

申请日：1956-01-31

Applicant: GEN ELECTRIC

Inventor： WENTORF JR ROBERT H

IPC: B01J3/06

CPC classification number: B01J3/062 ,  B01J3/065 ,  B01J2203/0655 ,  B01J2203/068 ,  B30B11/004 ,  Y10S425/026

公开(公告)号：US20180238115A1

公开(公告)日：2018-08-23

申请号：US15955050

申请日：2018-04-17

Applicant: Element Six Abrasives S.A.

Inventor： Nedret CAN ,  Kaveshini NAIDOO

IPC: E21B10/46 ,  E21B10/573 ,  C04B37/02 ,  B01J3/06 ,  B32B18/00 ,  B82Y30/00 ,  C04B35/52 ,  C04B35/626 ,  C04B35/63 ,  C04B35/645 ,  C01B32/25 ,  C22C26/00 ,  B22F5/00

CPC classification number: E21B10/46 ,  B01J3/062 ,  B01J2203/061 ,  B01J2203/0615 ,  B01J2203/062 ,  B01J2203/0625 ,  B01J2203/0655 ,  B01J2203/068 ,  B01J2203/0685 ,  B22F2005/001 ,  B32B18/00 ,  B32B2307/554 ,  B32B2307/704 ,  B82Y30/00 ,  C01B32/25 ,  C04B35/52 ,  C04B35/6261 ,  C04B35/62655 ,  C04B35/6303 ,  C04B35/645 ,  C04B37/021 ,  C04B2235/3813 ,  C04B2235/3839 ,  C04B2235/3843 ,  C04B2235/424 ,  C04B2235/425 ,  C04B2235/427 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/5472 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/588 ,  C04B2237/704 ,  C22C26/00 ,  C22C2026/005 ,  C22C2026/006 ,  E21B10/573

Abstract: A polycrystalline diamond structure comprises a first region and a second region adjacent the first region, the second region being bonded to the first region by intergrowth of diamond grains. The first region comprises a plurality of alternating strata or layers, each or one or more strata or layers in the first region having a thickness in the range of around 5 to 300 microns. The polycrystalline diamond (PCD) structure has a diamond content of at most about 95 percent of the volume of the PCD material, a binder content of at least about 5 percent of the volume of the PCD material, and one or more of the layers or strata in the first region comprise and/or the second region comprises diamond grains having a mean diamond grain contiguity of greater than about 60 percent and a standard deviation of less than about 2.2 percent. There is also disclosed a method of making such a polycrystalline diamond structure.

公开(公告)号：US09868100B2

公开(公告)日：2018-01-16

申请号：US13153176

申请日：2011-06-03

Applicant: Chien-Min Sung

Inventor： Chien-Min Sung

IPC: B24D11/00 ,  B01J3/06 ,  B24B53/017 ,  B24D3/24

CPC classification number: B01J3/062 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0645 ,  B01J2203/0655 ,  B01J2203/066 ,  B01J2203/068 ,  B24B53/017 ,  B24D3/24 ,  B24D11/001

Abstract: Superabrasive tools and methods for the making thereof are disclosed and described. In one aspect, superabrasive particles are chemically bonded to a matrix support material according to a predetermined pattern by a braze alloy. The brazing alloy may be provided as a powder, thin sheet, or sheet of amorphous alloy. A template having a plurality of apertures arranged in a predetermined pattern may be used to place the superabrasive particles on a given substrate or matrix support material.

公开(公告)号：US09487446B2

公开(公告)日：2016-11-08

申请号：US14650173

申请日：2013-12-05

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： Takeshi Sato ,  Katsuko Yamamoto ,  Kazuhiro Ikeda ,  Hitoshi Sumiya

IPC: C01B31/06 ,  C04B35/52 ,  B21C3/02 ,  C23C14/34 ,  C23C14/06 ,  C04B35/626 ,  B01J3/06 ,  C04B35/645

CPC classification number: C04B35/52 ,  B01J3/062 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/068 ,  B01J2203/0685 ,  B21C3/025 ,  B22F2005/002 ,  C01B32/25 ,  C04B35/6261 ,  C04B35/6281 ,  C04B35/62826 ,  C04B35/62831 ,  C04B35/62842 ,  C04B35/62884 ,  C04B35/645 ,  C04B2235/3201 ,  C04B2235/3213 ,  C04B2235/3272 ,  C04B2235/3281 ,  C04B2235/3291 ,  C04B2235/40 ,  C04B2235/401 ,  C04B2235/405 ,  C04B2235/407 ,  C04B2235/408 ,  C04B2235/425 ,  C04B2235/427 ,  C04B2235/444 ,  C04B2235/446 ,  C04B2235/5445 ,  C04B2235/725 ,  C04B2235/785 ,  C22C1/053 ,  C22C26/00 ,  C23C14/0611 ,  C23C14/34

Abstract: Provided are a diamond polycrystalline body having a longer life than conventional diamond polycrystalline bodies when it is slid, a method for manufacturing the same, and a tool. In a diamond polycrystalline body, at least one element whose sulfide or chloride has a melting point of less than or equal to 1000° C. is added thereto, and crystal grains have an average grain size of less than or equal to 500 nm. Thereby, wear of diamond can be suppressed, and the diamond polycrystalline body can have a longer life when it is slid.

Abstract translation: 提供一种金刚石多晶体，其在滑动时具有比常规金刚石多晶体更长的寿命，其制造方法和工具。 在金刚石多晶体中，向其中加入硫化物或氯化物的熔点小于或等于1000℃的至少一种元素，晶粒的平均粒径小于或等于500nm。 因此，可以抑制金刚石的磨损，并且金刚石多晶体在滑动时具有更长的寿命。

公开(公告)号：US09238875B2

公开(公告)日：2016-01-19

申请号：US12929567

申请日：2011-02-01

Applicant: Hexiang Zhu ,  Karl Pearson ,  Joo Ro Kim

Inventor： Hexiang Zhu ,  Karl Pearson ,  Joo Ro Kim

IPC: C30B29/04 ,  B01J3/06

CPC classification number: C30B29/04 ,  B01J3/062 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/068 ,  Y10T117/10

Abstract: A multi-layer structure in a reaction cell for a diamond growth is provided. The multi-layer structure includes: a diamond seed; a first metal catalyst layer provided on the diamond seed, the first metal catalyst layer containing a first concentration of carbon; a second metal catalyst layer provided on the first metal layer, the second metal catalyst layer containing a second concentration of carbon that is higher than the first concentration; and a carbon source layer provided on the second metal layer.

Abstract translation: 提供了用于金刚石生长的反应池中的多层结构。 多层结构包括：金刚石种子; 设置在所述金刚石晶种上的第一金属催化剂层，所述第一金属催化剂层含有第一浓度的碳; 设置在所述第一金属层上的第二金属催化剂层，所述第二金属催化剂层含有高于所述第一浓度的第二浓度的碳; 以及设置在第二金属层上的碳源层。

公开(公告)号：US09227166B2

公开(公告)日：2016-01-05

申请号：US11988891

申请日：2006-07-21

Applicant: Hitoshi Sumiya

Inventor： Hitoshi Sumiya

IPC: B01J3/06 ,  B82Y30/00 ,  C04B35/52 ,  C04B35/626 ,  C04B35/645

CPC classification number: B01J3/062 ,  B01J2203/0625 ,  B01J2203/0655 ,  B01J2203/068 ,  B01J2203/0685 ,  B82Y30/00 ,  C04B35/52 ,  C04B35/6261 ,  C04B35/645 ,  C04B2235/422 ,  C04B2235/425 ,  C04B2235/427 ,  C04B2235/528 ,  C04B2235/5288 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/656 ,  C04B2235/78 ,  C04B2235/781 ,  C04B2235/785 ,  C04B2235/96 ,  Y10T428/2982

Abstract: There are provided sufficiently strong, hard, and heat resistant, dense and homogenous polycrystalline diamond applicable to cutting tools, dressers, dies and other working tools and excavation bits and the like, and a cutting tool having a cutting edge of the polycrystalline diamond. The polycrystalline diamond is formed substantially only of diamond formed using a composition of material containing a non diamond type carbon material, the composition of material being converted directly into diamond and sintered at ultra high pressure and ultra high temperature without aid of a sintering aid or a catalyst, and has a mixed microstructure having a fine crystal grain of diamond having a maximal grain size of at most 100 nm and an average grain size of at most 50 nm and a coarse crystal grain of diamond in the form of one of a platelet and a granule having a grain size of at least 50 nm and at most 10,000 nm.