ACID CLEANING AND CORROSION INHIBITING COMPOSITIONS COMPRISING GLUCONIC ACID
    45.
    发明申请
    ACID CLEANING AND CORROSION INHIBITING COMPOSITIONS COMPRISING GLUCONIC ACID 审中-公开
    含有葡萄糖酸的酸清洗和腐蚀抑制组合物

    公开(公告)号:US20120108489A1

    公开(公告)日:2012-05-03

    申请号:US13344982

    申请日:2012-01-06

    Inventor: Altony Miralles

    Abstract: A biodegradable acid cleaning composition for cleaning stainless steel, and other surfaces is disclosed. The composition comprises urea sulfate in combination with gluconic acid which serves as a corrosion inhibitor. The composition retains the cleaning and corrosion prevention properties of similar phosphoric acid solutions but is safe for the environment and is less expensive to produce. Applicants have surprisingly found that the traditionally alkaline corrosion inhibitor, gluconic acid, can work effectively in an acidic cleaning composition.

    Abstract translation: 公开了一种用于清洁不锈钢和其它表面的可生物降解的酸清洗组合物。 该组合物包含与用作腐蚀抑制剂的葡萄糖酸组合的硫酸脲。 该组合物保持类似磷酸溶液的清洁和防腐性能,但对环境是安全的,并且生产成本较低。 申请人惊奇地发现传统的碱性腐蚀抑制剂葡萄糖酸可以在酸性清洁组合物中有效地起作用。

    Composition and method for cleaning semiconductor substrates comprising an alkyl diphosphonic acid
    46.
    发明授权
    Composition and method for cleaning semiconductor substrates comprising an alkyl diphosphonic acid 有权
    用于清洁包含烷基二膦酸的半导体衬底的组合物和方法

    公开(公告)号:US08148310B2

    公开(公告)日:2012-04-03

    申请号:US12888569

    申请日:2010-09-23

    Applicant: Wai Mun Lee

    Inventor: Wai Mun Lee

    Abstract: The compositions and methods herein relate to the method for the removal of residues and contaminants from metal or dielectric surfaces. Particularly, a composition and method of cleaning residues after chemical mechanical polishing of a copper or aluminum surface of the semiconductor substrates. A method of cleaning semiconductor substrates comprising contacting the substrates with a solution of water, and sufficient amount of alkyl diphosphonic acid comprising alkyl diphosphonic acid selected from the group of 1 hydroxyethane 1,1 diphosphonic acid, methylene disphosphonic acid, hydroxymethylene diphosphonic acid, dichloromethylene disphosphonic acid, hydroxycyclohexylmethylene disphosphonic acid, 1-hydroxy-3-aminopropane 1,1 diphosphonic acid, 1-hydroxy-4-aminobutane 1,1 diphosphonic acid mixed with dodecylbenzenesulfonic acid, xylenesulfonic acid, toluenesulfonic acid, phosphonoformic acid, sulfamic acid, 2-amino ethane sulfonic acid, or fluoroboric acid or an organic carboxylic acid and pH is adjusted to from greater than 6 to about 10 with a metal ion free base, and a surfactant.

    Abstract translation: 本文的组合物和方法涉及从金属或电介质表面去除残余物和污染物的方法。 特别是在对半导体基板的铜或铝表面进行化学机械抛光后清洗残留物的组合物和方法。 一种清洗半导体衬底的方法,包括使底物与水溶液接触,并含有足够量的烷基二膦酸,其选自1-羟基乙烷1,1-二膦酸,亚甲基膦酸,羟基亚甲基二膦酸,二氯亚甲基膦 酸,羟基环己基亚甲基二膦酸,1-羟基-3-氨基丙烷1,1-二膦酸,与十二烷基苯磺酸,二甲苯磺酸,甲苯磺酸,膦酰甲酸,氨基磺酸,2- 氨基乙磺酸或氟硼酸或有机羧酸,并且用金属离子游离碱和表面活性剂将pH调节至大于6至约10。

    Aqueous Highly Acidic Hard Surface Cleaning Compositions
    47.
    发明申请
    Aqueous Highly Acidic Hard Surface Cleaning Compositions 审中-公开
    水性高酸性硬表面清洁组合物

    公开(公告)号:US20120035091A9

    公开(公告)日:2012-02-09

    申请号:US12282276

    申请日:2007-03-01

    CPC classification number: C11D3/042 C11D1/72 C11D3/2068 C11D3/2075

    Abstract: Provided are highly aqueous liquid acidic hard surface cleaning composition having a pH of about 3 or less which comprise: an acid constituent, preferably comprising sulfamic acid and preferably at least one or more further co-acids, and preferably wherein the acid constituent comprises both sulfamic acid and formic acid; at least one nonionic surfactant based on monobranched alkoxylated C10/C11-fatty alcohols; an organic solvent constituent which comprises at least one glycol ether solvent, preferably a glycol ether solvent which desirably mitigates or masks malodors of the acid constituent, especially when the acid constituent comprises formic acid; optionally a cosurfactant constituent, including one or more nonionic, cationic, amphoteric or zwitterionic surfactants; optionally one or more further constituents selected coloring agents, fragrances and fragrance solubilizers, viscosity modifying agents including one or more thickeners, pH adjusting agents and pH buffers including organic and inorganic salts, optical brighteners, opacifying agents, hydrotropes, abrasives, and preservatives, as well as other optional constituents known to the art; and the balance, water, wherein water comprises at least 80% wt. of the composition.

    Abstract translation: 提供的pH为约3或更低的高含水液态酸性硬表面清洁组合物,其包含:酸组分,优选包含氨基磺酸,优选至少一种或多种另外的助酸,优选其中酸组分包含氨基磺酸 酸和甲酸; 至少一种基于单链烷氧基化的C10 / C11-脂肪醇的非离子表面活性剂; 包含至少一种二醇醚溶剂,优选二醇醚溶剂的有机溶剂成分,其优选减轻或掩蔽酸组分的恶臭,特别是当酸组分包含甲酸时; 任选的辅助表面活性剂组分,包括一种或多种非离子,阳离子,两性或两性离子表面活性剂; 任选的一种或多种其它成分选择着色剂,香料和香料增溶剂,粘度调节剂,包括一种或多种增稠剂,pH调节剂和pH缓冲剂,包括有机和无机盐,荧光增白剂,遮光剂,水溶助长剂,研磨剂和防腐剂,如 以及本领域已知的其它可选组分; 和余量,水,其中水包含至少80重量% 的组成。

    COMPOSITION AND METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATES
    50.
    发明申请
    COMPOSITION AND METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATES 有权
    用于清洁半导体衬底的组合物和方法

    公开(公告)号:US20110247650A1

    公开(公告)日:2011-10-13

    申请号:US13164474

    申请日:2011-06-20

    Applicant: WAI MUN LEE

    Inventor: WAI MUN LEE

    Abstract: The compositions and methods for the removal of residues and contaminants from metal or dielectric surfaces comprises at least one alkyl diphosphonic acid, at least one second acidic substance at a mole ratio of about 1:1 to about 10:1 in water, and pH is adjusted to from about 6 to about 10 with a basic compound, and optionally a surfactant. Particularly, a composition and method of cleaning residues after chemical mechanical polishing of a copper or aluminum surface of the semiconductor substrates. One of the embodiment is the method of using the compositions in dilution, wherein the solution may be diluted with DI water at dilution ratios, for example, of up to 1:10, up to 1:50, up to 1:100, up to 1:150, up to 1:250, and up to about 1:500 or any ratios therein.

    Abstract translation: 用于从金属或电介质表面去除残留物和污染物的组合物和方法包括至少一种烷基二膦酸,至少一种第二酸性物质,其水分摩尔比为约1:1至约10:1,pH为 用碱性化合物和任选的表面活性剂调节至约6至约10。 特别是在对半导体基板的铜或铝表面进行化学机械抛光后清洗残留物的组合物和方法。 其中一个实施方案是在稀释中使用组合物的方法,其中溶液可用稀释比例的DI水稀释,例如至多1:10,最高1:50,至1:100,向上 至1:150,高达1:250,高达约1:500或其中的任何比例。

Patent Agency Ranking