公开(公告)号：US4038171A

公开(公告)日：1977-07-26

申请号：US672402

申请日：1976-03-31

申请人： Ronald W. Moss ,  Edwin D. McClanahan, Jr. ,  Nils Laegreid

发明人： Ronald W. Moss ,  Edwin D. McClanahan, Jr. ,  Nils Laegreid

IPC分类号： C23C14/34 ,  C23C15/00

CPC分类号： C23C14/3478

摘要： A supported plasma sputtering apparatus is described having shaped electrical fields in the electron discharge region between the cathode and anode and the sputter region between the target and substrate while such regions are free of any externally applied magnetic field to provide a high deposition rate which is substantially uniform over a wide area. Plasma shaping electrodes separate from the anode and target shape the electrical fields in the electron discharge region and the sputter region to provide a high density plasma. The anode surrounds the target to cause substantially uniform sputtering over a large target area. In one embodiment the anode is in the form of an annular ring surrounding a flat target surface, such anode being provided with a ribbed upper surface which shields portions of the anode from exposure to sputtered material to maintain the electron discharge for a long stable operation. Several other embodiments accomplish the same result by using different anodes which either shield the anode from sputtered material, remove the sputtered coating on the anode by heating, or simultaneously mix sputtered metal from the auxiliary target with sputtered insulator from the main target so the resultant coating is conductive. A radio frequency potential alone or together with a D.C. potential, may be applied to the target for a greater sputtering rate.

公开(公告)号：US3779891A

公开(公告)日：1973-12-18

申请号：US3779891D

申请日：1971-10-26

申请人： EASTMAN KODAK CO

发明人： VEGH B ,  COATES A

IPC分类号： C23C14/34 ,  C23C15/00

CPC分类号： C23C14/3478

摘要： A triode sputtering apparatus to deposit material on the surface of an article. The apparatus comprises an enclosure means for evacuating the enclosure, a means for establishing an ion plasma in the enclosure. An ion target, including two members with surfaces of the material to be sputtered, is located in the enclosure with the surfaces facing the ion plasma. The target members are electrically biased so that ions from the plasma will impinge on their surfaces and sputter material therefrom. An article having a surface to be coated is mounted in the enclosure so that the surface faces the ion plasma and the sputtering surfaces of the target which are at an acute angle to the surface of the article. An electron funnel is used to funnel electrons being supplied to the plasma between the article and the target and an elongated anode is used to attract electrons from the plasma. The apparatus may be used to coat 11 by 11 inch glass plates with a metallic layer having substantially uniform optical density.

摘要翻译： 一种用于将物质沉积在物品表面上的三极管溅射装置。 该装置包括用于抽空外壳的外壳装置，用于在外壳中建立离子等离子体的装置。 离子靶，包括具有待溅射材料表面的两个构件，位于外壳中，其表面面向离子等离子体。 目标构件被电偏置，使得来自等离子体的离子将撞击在其表面上并从其溅射材料。 具有待涂覆表面的物品安装在外壳中，使得表面面对与制品表面成锐角的离子等离子体和靶的溅射表面。 电子漏斗用于漏斗供应到制品和靶之间的等离子体的电子，并且使用细长的阳极来吸引等离子体的电子。 该装置可用于用11英寸玻璃板涂覆具有基本均匀光密度的金属层。

公开(公告)号：US3707452A

公开(公告)日：1972-12-26

申请号：US3707452D

申请日：1970-01-22

申请人： IBM

发明人： LESTER WILLIAM CARL ,  NUCCIO CARLO ,  WARD ERNEST S

IPC分类号： H05B7/00 ,  B65H18/02 ,  C23C14/34 ,  C23C14/40 ,  H01J37/34 ,  C23C15/00

CPC分类号： B65H18/021 ,  C23C14/3478 ,  H01J37/34

摘要： AN RF SPUTTERING APPARATUS HAS AN ELONGATED HOLLOW CYLINDRICAL TARGET SURROUNDING AN ELONGATED CYLINDRICAL CATHODE TO SHIELD THE CATHODE FROM A PARTIALLY EVACUATED CHAMBER IN WHICH THE TARGET IS DISPOSED. AN ELONGATED HOLLOW CYLINDRICAL ANODE IS DISPOSED IN SURROUNDING RELATION TO THE TARGET. THE TARGET IS SPACED FROM THE CATHODE SO THAT COOLING OF THE TARGET MAY OCCUR BY DIELECTRIC COOLANT FLOWING THEREBETWEEN WITH THE DIELECTRIC COOLANT ALSO TRANSFERRING RF POWER TO THE TARGET FROM THE CATHODE WHEN RF POWER IS APPLIED BETWEEN THE CATHODE AND THE ANODE. IN AN EXTENSION TO CONTINUOUS MODE DEPOSITION (AS OPPOSED TO BATCH MODE DEPOSITION), SUBSTRATES CAN HAVE VARYING THICKNESSES OF MATERIAL DEPOSITED THEREON FROM THE TARGET UNDER THE SAME SPUTTERING CONDITIONS BY MOVING EACH SUBSTRATE INTO THE CHAMBER FOR SUPPORT ON THE INNER SURFACE OF THE ANODE, ROTATING THE ANODE ABOUT THE TARGET AT A CONSTANT VELOCITY, AND THEN REMOVING EACH SUBSTRATE AFTER A PERIOD OF TIME. THE AMOUNT OF TIME THAT EACH OF THE SUBSTRATES IS SUPPORTED ON THE ANODE DETERMINES THE THICKNESS OF THE DEPOSITED MATERIAL ON THE SUBSTRATE.

公开(公告)号：US3437888A

公开(公告)日：1969-04-08

申请号：US3437888D

申请日：1966-07-01

申请人： UNION CARBIDE CORP

发明人： HALL JOHN H

IPC分类号： C23C14/18 ,  C23C14/34 ,  H01L21/00 ,  H01L23/485 ,  H01L23/522 ,  H01L27/00 ,  H01L3/12 ,  H01L7/00

CPC分类号： H01L23/522 ,  C23C14/18 ,  C23C14/3478 ,  H01L21/00 ,  H01L23/485 ,  H01L27/00 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2924/3025 ,  Y10S148/158 ,  Y10S148/169 ,  H01L2924/00

公开(公告)号：US3296115A

公开(公告)日：1967-01-03

申请号：US35241664

申请日：1964-03-02

申请人： SCHJELDAHL CO G T

发明人： NILS LAEGREID ,  MOSESON ROGER M

IPC分类号： C23C14/34 ,  H01J37/34

CPC分类号： H01J37/34 ,  C23C14/3478