摘要:
A grating optical switch has at least one switch region for ON-OFF switch control of a signal light transmission and a signal light reflection, at least one input/output optical waveguide region for guiding the signal light to the switch, at least one coupler region for coupling the control light colinearly to the signal light and for guiding the control light to the switch region together with the signal light, and at least one separator region for separating the signal light and the control light. The switch region transmits the signal light when the control light is coupled while reflecting the signal light when the control light is not coupled.
摘要:
An optical switch having a plurality of channel waveguides. At least one of which is a gain-guided channel waveguide. In operation, a light beam incident on one end face of the optical switch through one of the channel waveguides exits from the switch through one or another of the channel waveguides in accordance with current injected into the gain-guided channel waveguide. As a result, a compact low-voltage optical switch is possible. The channel waveguides may run parallel to each other, or may come together in a center portion in a X-shape, separated by a relatively small distance, or as a third alternative may be formed in a Y-shape, with a small distance separating the branches of said Y-shape.
摘要:
A structure and a corresponding method for producing a permanent electric biasing field in an electrooptical device. Electrodes are embedded in an insulating layer formed over the device, which includes a substrate of electrooptical material and an optical waveguide formed in the substrate. The electrodes are electrostatically charged and encapsulated in the insulating layer, to produce the desired electric field without the need for an external voltage source.
摘要:
Embodiments include a method and associated apparatuses for phase-shifting an optical signal. The method comprises receiving, at a first end of an optical waveguide formed in a semiconductor layer and extending along a first axis, an optical signal having a first phase. The method further comprises transmitting, at a second end of the optical waveguide opposite the first end, a modified optical signal having a second phase different than the first phase. Transmitting a modified optical signal comprises applying a voltage signal between a first contact region and a second contact region formed in the semiconductor layer apart from the first axis. Applying a voltage signal causes an electrical current to be conducted along a dimension of the optical waveguide. The electrical current causes resistive heating of the optical waveguide and a desired phase shift between the first phase and the second phase.
摘要:
According to embodiments of the present invention, an optical device is provided. The optical device includes a channel waveguide, and a plurality of optical elements arranged along at least a portion of the channel waveguide to interact with light propagating in the channel waveguide, wherein a period of the plurality of optical elements changes nonlinearly along the portion of the channel waveguide. According to further embodiments of the present invention, a method for forming an optical device is also provided.
摘要:
An optical integrated circuit may include a substrate including a single crystalline semiconductor material, a passive element extending in a crystal orientation of the substrate and including the single crystalline semiconductor material, and an active element extending in a crystal orientation of the substrate and including the single crystalline semiconductor material.
摘要:
A method for manufacturing a semiconductor optical modulator includes forming a p-type semiconductor layer on a main surface of a p-type semiconductor substrate; forming a pair of stripe-shaped masks on the p-type semiconductor layer, the stripe-shaped masks extending in a first direction along the main surface of the p-type semiconductor substrate and being spaced apart from each other; simultaneously forming a hole and a pair of stripe structures extending in the first direction by etching the p-type semiconductor layer through the stripe-shaped masks, the pair of stripe structures defining the hole; after removing the stripe-shaped masks, forming a buried layer in the hole; forming a core layer on the buried layer and the stripe structures; and forming an upper cladding layer on the core layer. The buried layer is made of a semiconductor material with a lower optical absorption loss than that of the p-type semiconductor layer.
摘要:
It is an object to provide an optical control device capable of realizing speed matching between a microwave and a light wave or impedance matching of microwaves and of reducing a driving voltage. An optical control device including a thin plate 1 (11) which has an electro-optical effect and has a thickness of 10 μm or less, an optical waveguide 2 formed in the thin plate, and control electrodes for controlling light passing through the optical waveguide is characterized in that the control electrodes are configured to include a first electrode and a second electrode disposed to interpose the thin plate therebetween, the first electrode has a coplanar type electrode including at least a signal electrode 4 and a ground electrode 5, and the second electrode has at least a ground electrode 54 (55, 56) and is configured to apply an electric field to the optical waveguide in cooperation with the signal electrode of the first electrode.
摘要:
There is provided a waveguide type optical device whose parasitic capacitance is reduced to allow an increase in signal transmission speed. Bottom electrode 41 is formed on substrate 2, bottom cladding 51 is formed on bottom electrode 41, and bottom core 62 is formed on bottom cladding 51. Top core 61 is formed on bottom core 62, top cladding 53 is formed on top core 61, and top electrode 42 is formed on top cladding 53. Two sides of top core 61 and bottom core 62 are covered with side cladding layer 52. Vertically overlapping portions of top electrode 42 and bottom electrode 41 are located almost at a same place as a region for a core layer composed of top core 61 and bottom core 62. The width of one from among top core 61 and bottom core 62 is satisfying a single mode condition, and the width of the other is almost equal to or more than the width of a field distribution.
摘要:
A method for manufacturing a semiconductor optical modulator includes forming a p-type semiconductor layer on a main surface of a p-type semiconductor substrate; forming a pair of stripe-shaped masks on the p-type semiconductor layer, the stripe-shaped masks extending in a first direction along the main surface of the p-type semiconductor substrate and being spaced apart from each other; simultaneously forming a hole and a pair of stripe structures extending in the first direction by etching the p-type semiconductor layer through the stripe-shaped masks, the pair of stripe structures defining the hole; after removing the stripe-shaped masks, forming a buried layer in the hole; forming a core layer on the buried layer and the stripe structures; and forming an upper cladding layer on the core layer. The buried layer is made of a semiconductor material with a lower optical absorption loss than that of the p-type semiconductor layer.