-
公开(公告)号:US20230335561A1
公开(公告)日:2023-10-19
申请号:US18207175
申请日:2023-06-08
发明人: Shunpei YAMAZAKI , Jun KOYAMA , Hiroyuki MIYAKE
IPC分类号: H01L27/12 , H01L29/04 , H01L29/417 , H01L29/423 , H01L29/10 , H01L29/45 , H01L29/24 , G09G3/20 , G11C19/28 , H01L29/786
CPC分类号: H01L27/1229 , H01L29/045 , H01L29/41733 , H01L29/42372 , H01L29/1033 , H01L29/45 , H01L29/24 , G09G3/20 , G11C19/28 , H01L27/1225 , H01L27/1251 , H01L29/78648 , H01L29/7869 , H01L29/247 , H01L29/78693 , G09G2310/0267 , G09G2310/0275 , G09G2310/0286 , H10K59/1213
摘要: An object of an embodiment of the present invention is to manufacture a semiconductor device with high display quality and high reliability, which includes a pixel portion and a driver circuit portion capable of high-speed operation over one substrate, using transistors having favorable electric characteristics and high reliability as switching elements. Two kinds of transistors, in each of which an oxide semiconductor layer including a crystalline region on one surface side is used as an active layer, are formed in a driver circuit portion and a pixel portion. Electric characteristics of the transistors can be selected by choosing the position of the gate electrode layer which determines the position of the channel. Thus, a semiconductor device including a driver circuit portion capable of high-speed operation and a pixel portion over one substrate can be manufactured.
-
公开(公告)号:US11769834B2
公开(公告)日:2023-09-26
申请号:US17543627
申请日:2021-12-06
发明人: Jong Yun Kim , Taekyung Ahn , Youngdae Kim
IPC分类号: H01L29/786 , H01L29/45 , C22C27/04 , H01L27/12 , H10K59/121
CPC分类号: H01L29/78618 , C22C27/04 , H01L27/1225 , H01L27/1251 , H01L27/1255 , H01L29/45 , H01L29/454 , H01L29/458 , H01L29/7869 , H10K59/1216 , H01L2924/1205 , H01L2924/13069 , H10K59/1213
摘要: A display substrate including a base substrate, a first thin film transistor disposed on the base substrate and including a first gate electrode and a first semiconductor active layer; a second thin film transistor electrically connected to the first thin film transistor, the second thin film transistor including a second gate electrode and a second semiconductor active layer; and an organic light emitting device electrically connected to the second thin film transistor. The first semiconductor active layer includes a first material and the second semiconductor active layer includes a second material different from the first material.
-
公开(公告)号:US11765946B2
公开(公告)日:2023-09-19
申请号:US18085749
申请日:2022-12-21
发明人: Yoon-Jong Cho , Seok Je Seong , Seong Jun Lee
IPC分类号: H10K59/126 , G09G3/3233 , H10K59/121 , H01L27/12 , H01L29/786 , H01L29/04 , G09G3/3208 , H10K50/86 , H10K59/12 , H10K59/131
CPC分类号: H10K59/126 , G09G3/3233 , H10K59/1213 , G09G3/3208 , G09G2300/0426 , G09G2300/0819 , G09G2300/0852 , G09G2310/0254 , G09G2320/0238 , H01L27/1222 , H01L27/1225 , H01L27/1251 , H01L29/04 , H01L29/7869 , H01L29/78672 , H01L29/78675 , H10K50/865 , H10K59/12 , H10K59/1216 , H10K59/131
摘要: A display device includes a polycrystalline semiconductor including a channel and electrodes of a driving transistor; a gate electrode of the driving transistor on the channel of the driving transistor; a first storage electrode on the gate electrode of the driving transistor; a light blocking layer of a first transistor and a light blocking layer of a second transistor; an oxide semiconductor including a channel and electrodes of the first transistor, and a channel and electrodes of the second transistor; a gate electrode of the first transistor on the channel of the first transistor; and a gate electrode of the second transistor on the channel of the second transistor. The light blocking layer of the first transistor and the first storage electrode are on a same layer, and the light blocking layer of the second transistor and the gate electrode of the driving transistor are on a same layer.
-
公开(公告)号:US11711945B2
公开(公告)日:2023-07-25
申请号:US17447283
申请日:2021-09-09
发明人: Hyeonwoo Shin , Seokje Seong , Yunsik Joo
IPC分类号: G09G3/3233 , H10K59/121 , H10K59/131 , H01L29/786 , H01L27/12
CPC分类号: H10K59/1216 , G09G3/3233 , H10K59/1213 , H10K59/131 , G09G2300/0426 , G09G2300/0819 , G09G2300/0842 , G09G2330/021 , H01L27/124 , H01L27/1225 , H01L27/1251 , H01L27/1255 , H01L29/7869 , H01L29/78675
摘要: A display device is disclosed that may include a first active layer disposed on a substrate, a scan line disposed on the first active layer, extending in a first direction and including a first protruding portion protruding in a second direction crossing the first direction, a first compensation control line disposed on the first active layer, extending in the first direction and spaced apart from the scan line in the second direction, and a second active layer disposed on the scan line and the first compensation control line, overlapping the scan line and the first compensation control line and including a second protruding portion protruding in the first direction. The first protruding portion may be positioned outside the second active layer in the first direction in a plan view.
-
公开(公告)号:US11705461B2
公开(公告)日:2023-07-18
申请号:US17357347
申请日:2021-06-24
发明人: Dong Li , Yang Yu , Huijuan Zhang , Zheng Liu
IPC分类号: H01L27/12 , H10K59/121
CPC分类号: H01L27/1229 , H01L27/1225 , H01L27/1251 , H01L27/1255 , H01L27/1259 , H10K59/1213
摘要: Disclosed are a display substrate, a manufacturing method thereof, a display panel and a display device. The display panel comprises: a base substrate provided with a first area and a second area which are not overlapped with each other; a low temperature poly-silicon transistor arranged in the first area, the low temperature poly-silicon transistor comprises a poly-silicon active layer; an oxide transistor arranged in the second area, the oxide transistor comprises a first gate electrode; the first gate electrode is arranged in a same layer as the poly-silicon active layer, and a material of the first gate electrode is heavily-doped poly-silicon.
-
公开(公告)号:US11683958B2
公开(公告)日:2023-06-20
申请号:US17340236
申请日:2021-06-07
发明人: Seung Chan Lee , Beom Soo Park , Wang Jo Lee , Jae Bum Cho , Jae Ik Lim
IPC分类号: H01L27/14 , H10K59/121 , H10K59/131 , H01L27/12 , H01L29/786
CPC分类号: H10K59/1213 , H10K59/1216 , H10K59/131 , H01L27/124 , H01L27/1225 , H01L27/1251 , H01L27/1255 , H01L29/7869 , H01L29/78675
摘要: A display device includes: a substrate; a polycrystalline semiconductor layer which includes a first electrode, a channel, and a second electrode of a driving transistor disposed on the substrate; a first gate insulating layer disposed on the polycrystalline semiconductor layer; a gate electrode of the driving transistor which is disposed on the first gate insulating layer and overlaps the channel; a lower first scan line disposed on the first gate insulating layer; a second gate insulating layer disposed on the gate electrode and on the lower first scan line; a first lower boost electrode disposed on the second gate insulating layer; a first interlayer-insulating layer disposed on the first lower boost electrode; an oxide semiconductor layer disposed on the first interlayer-insulating layer and including a first upper boost electrode overlapping the first lower boost electrode; and a first connection electrode connecting the gate electrode and the first upper boost electrode.
-
公开(公告)号:US11676971B2
公开(公告)日:2023-06-13
申请号:US17673212
申请日:2022-02-16
发明人: Kei Takahashi , Hiroyuki Miyake
IPC分类号: H01L27/12 , G09G3/3233 , G09G3/3225 , G09G3/3266 , G09G3/3275 , G11C19/28
CPC分类号: H01L27/1225 , G09G3/3225 , G09G3/3233 , G09G3/3266 , H01L27/1222 , H01L27/1251 , H01L27/1255 , H01L27/1262 , G09G3/3275 , G09G2300/0426 , G09G2300/0465 , G09G2310/0286 , G09G2310/0291 , G09G2310/08 , G09G2330/023 , G09G2354/00 , G11C19/28
摘要: A display device including a display portion with an extremely high resolution is provided. The display device includes a pixel circuit and a light-emitting element. The pixel circuit includes a first element layer including a first transistor and a second element layer including a second transistor. A channel formation region of the first transistor includes silicon. The first transistor has a function of driving the light-emitting element. The second transistor functions as a switch. A channel formation region of the second transistor includes a metal oxide. The metal oxide functions as a semiconductor. The second element layer is provided over the first element layer.
-
公开(公告)号:US20230170357A1
公开(公告)日:2023-06-01
申请号:US17976865
申请日:2022-10-30
申请人: InnoLux Corporation
发明人: Chandra LIUS , Kuan-Feng LEE
CPC分类号: H01L27/1251 , H01L27/3234 , H01L27/3262 , H01L27/3272 , G06V40/1318
摘要: An electronic device allowing a light to pass through and an electronic module are disclosed. The electronic device includes a substrate, a silicon semiconductor disposed on the substrate, a first conductive layer disposed on the silicon semiconductor, an oxide semiconductor disposed on the substrate, and a second conductive layer disposed on the oxide semiconductor. One of the first conductive layer and the second conductive layer comprises a first opening through which the light is allowed to pass. The electronic module includes the electronic device and a fingerprint sensor or an image sensor disposed underneath the electronic device and configured to receive the light.
-
公开(公告)号:US20230169927A1
公开(公告)日:2023-06-01
申请号:US18155336
申请日:2023-01-17
申请人: InnoLux Corporation
发明人: Kuan-Feng LEE , Yuan-Lin WU
IPC分类号: G09G3/3266 , H01L27/12 , H01L23/544 , G06F3/041 , G06F3/044
CPC分类号: G09G3/3266 , H01L27/124 , H01L23/544 , G06F3/0412 , H01L27/1225 , H01L27/1251 , G06F3/04164 , G06F3/044 , G09G2310/0297 , H01L2223/54426
摘要: A substrate assembly includes a substrate having a first surface and a second surface opposite to the first surface. The substrate assembly includes a first conductive portion disposed on the first surface, and a second conductive portion disposed on the second surface. The substrate assembly includes a connective portion that is at least partially disposed in the substrate and penetrates from the first surface to the second surface. The first conductive portion is electrically connected to the second conductive portion through the connective portion. The substrate assembly includes a processing unit disposed on the first surface, and an electronic element disposed on the second surface. The first conductive portion, the second conductive portion and the connective portion are overlapped with either of the processing unit or the electronic element, and the other of the processing unit or the electronic element is electrically connected to the first conductive portion.
-
公开(公告)号:US20230163143A1
公开(公告)日:2023-05-25
申请号:US17919547
申请日:2021-11-17
发明人: Lizhong WANG , Ce NING , Tianmin ZHOU , Wei YANG , Yunping DI , Rui HUANG , Binbin TONG , Liping LEI
IPC分类号: H01L27/12 , G02F1/1362 , G02F1/1368
CPC分类号: H01L27/1251 , H01L27/124 , G02F1/136295 , H01L27/1225 , G02F1/13685 , G02F1/136209
摘要: An array substrate and a display panel, relating to the technical field of display. The array substrate includes a base substrate, and a thin film transistor group which is provided on one side of the base substrate and includes at least two thin film transistors, the thin film transistors being stacked in a direction perpendicular to the base substrate.
-
-
-
-
-
-
-
-
-