公开(公告)号：US20240204737A1

公开(公告)日：2024-06-20

申请号：US18380460

申请日：2023-10-16

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Junghwan MOON ,  Youngyoon Woo ,  Minsik Jun

IPC分类号： H03F3/24 ,  H03F1/32 ,  H04B1/04

CPC分类号： H03F3/245 ,  H03F1/3241 ,  H04B1/0475 ,  H03F2200/451 ,  H04B2001/0425

摘要： An electronic device may include: a processor; a power amplifier; a power supply configured to supply power to the power amplifier; a crest factor reduction (CFR) module; and a digital predistortion (DPD) module, wherein the processor is configured to: transmit a first radio frequency (RF) signal, based on a first state of each of the CFR module, the DPD module, and the power supply, in a first transmission interval, the first RF signal being generated from a first baseband signal; identify voltage information of a second RF signal associated with a second transmission interval after the first transmission interval; change a state of each of the CFR module, the DPD module, and the power supply from the first state to a second state, based on the voltage information, in a first reception interval between the first transmission interval and the second transmission interval; and transmit the second RF signal generated from a second baseband signal based on the second state of each of the CFR module, the DPD module, and the power supply, in the second transmission interval.

公开(公告)号：US20240195362A1

公开(公告)日：2024-06-13

申请号：US18063699

申请日：2022-12-09

申请人： Silicon Laboratories Inc.

发明人： Aslamali A. Rafi

IPC分类号： H03F1/02 ,  H03F3/195 ,  H03F3/24 ,  H04B1/04

CPC分类号： H03F1/0288 ,  H03F1/0227 ,  H03F3/195 ,  H03F3/245 ,  H04B1/0458 ,  H03F2200/451 ,  H03F2200/541 ,  H04B2001/0408

摘要： In on example, an apparatus includes: a first power amplifier (PA) to receive a first input radio frequency (RF) signal and output a first amplified RF signal; a second PA to receive a second input RF signal and output a second amplified RF signal; and a transformer circuit coupled to an output of the first PA and an output of the second PA. The transformer circuit is to provide, to a load circuit, an RF output signal comprising the first amplified RF signal and the second amplified RF signal.

公开(公告)号：US20240186964A1

公开(公告)日：2024-06-06

申请号：US18442884

申请日：2024-02-15

申请人： Skyworks Solutions, Inc.

发明人： Sabah Khesbak ,  Florinel G. Balteanu ,  Roman Zbigniew Arkiszewski ,  Jeffrey Gordon Strahler

IPC分类号： H03F3/24 ,  H03F3/195

CPC分类号： H03F3/245 ,  H03F3/195 ,  H03F2200/105 ,  H03F2200/165 ,  H03F2200/451

摘要： Apparatus and methods for adaptive power amplifier biasing are provided. In certain embodiments, a power amplifier system includes a power amplifier that provides amplification to a radio frequency (RF) signal, and a power amplifier bias control circuit that generates a bias signal of the power amplifier based on a bandwidth signal indicating a bandwidth of the RF signal. The power amplifier bias control circuit has a bandwidth that adapts to the bandwidth of the RF signal as indicated by the bandwidth signal.

公开(公告)号：US20240184969A1

公开(公告)日：2024-06-06

申请号：US18527145

申请日：2023-12-01

申请人： Skyworks Solutions, Inc.

发明人： Mackenzie Brian Cook

IPC分类号： G06F30/373 ,  G06F30/392 ,  H03F3/24

CPC分类号： G06F30/373 ,  G06F30/392 ,  H03F3/245 ,  G06F2115/08

摘要： A method for designing an electronic circuit includes providing a prototype electronic circuit comprising one or more capacitors and one or more other components, at least one of the one or more capacitors being a variable capacitor; testing the electronic circuit by adjusting the capacitance of the one or more variable capacitors to determine one or more first capacitance values of the one or more variable capacitors that cause the electronic circuit to have one or more operating parameters that meet one or more desired operating parameters of the electronic circuit; determining, based on the testing of the electronic circuit, capacitance values for one or more fixed-value capacitors to replace the one or more variable capacitors in the electronic circuit, each of the fixed-value capacitors having a second capacitance value equivalent to the first value of the corresponding variable capacitor. A method of designing such a prototype electronic circuit is also provided. An electronic circuit designed by using the method, a radio frequency module comprising such an electronic circuit, a wireless device comprising such an electronic circuit are also provided.

公开(公告)号：US20240171140A1

公开(公告)日：2024-05-23

申请号：US18420805

申请日：2024-01-24

申请人： Murata Manufacturing Co., Ltd.

发明人： Kenji TAHARA ,  Kensuke TAKIMOTO ,  Kae YAMAMOTO

IPC分类号： H03F3/24 ,  H03F1/02 ,  H04B1/04

CPC分类号： H03F3/245 ,  H03F1/0216 ,  H04B1/0475 ,  H03F2200/294 ,  H03F2200/451 ,  H03F2200/541 ,  H04B2001/0416

摘要： A power amplifier circuit that includes a carrier amplifier, peaking amplifiers, an input coil, an output coil, an input coil, an output coil, an output terminal to which one end of the output coil is connected, and ¼-wavelength transmission lines. The carrier amplifier is connected to one end of the input coil. The peaking amplifier is connected to one end of the ¼-wavelength transmission line. The peaking amplifier is connected to one end of the input coil. The peaking amplifier is connected to one end of the ¼-wavelength transmission line. The other end of the ¼-wavelength transmission line is connected to the other end of the input coil. The other end of the ¼-wavelength transmission line is connected to the other end of the input coil. One end of the output coil is connected to the other end of the output coil.

公开(公告)号：US20240171127A1

公开(公告)日：2024-05-23

申请号：US18416149

申请日：2024-01-18

申请人： HUAWEI TECHNOLOGIES CO., LTD.

发明人： Qiao LIU ,  Zhi ZHOU ,  Qianfu CHENG ,  Hua CAI

IPC分类号： H03F1/02 ,  H03F3/24 ,  H04B1/04

CPC分类号： H03F1/0233 ,  H03F3/245 ,  H04B1/04 ,  H03F2200/105 ,  H03F2200/451

摘要： A signal processing apparatus includes a power amplifier and a power supply modulator. The signal processing apparatus obtains a first non-linear coefficient, where the first non-linear coefficient indicates a non-linear characteristic of the power amplifier and a non-linear characteristic of the power supply modulator. The signal processing apparatus performs non-linear preprocessing and correction on a first baseband signal based on the first non-linear coefficient, to obtain a first intermediate signal and a second intermediate signal. The signal processing apparatus performs digital-to-analog conversion on the first intermediate signal and then performs up-conversion processing, to obtain a third intermediate signal. The signal processing apparatus performs envelope processing on the second intermediate signal, to obtain a first envelope signal. The signal processing apparatus modulates the first envelope signal by using the power supply modulator, to obtain a first control voltage signal.

公开(公告)号：US11984966B2

公开(公告)日：2024-05-14

申请号：US17509579

申请日：2021-10-25

申请人： Maxar Space LLC

发明人： Seyed Tabatabaei ,  Jim Sowers ,  Ghislain Turgeon

IPC分类号： H04B7/185 ,  H01Q1/28 ,  H03F1/02 ,  H03F3/195 ,  H03F3/24 ,  H04B1/04 ,  H04B1/18

CPC分类号： H04B7/18515 ,  H01Q1/288 ,  H03F1/0288 ,  H03F3/195 ,  H03F3/245 ,  H04B1/04 ,  H04B1/0458 ,  H04B1/0483 ,  H04B1/18 ,  H03F2200/451 ,  H04B2001/045

摘要： A solid state power amplifier uses a Doherty power amplifier that can be implemented as a monolithic microwave integrated circuit. By adjusting the DC bias of the amplifying stages in each branch of the Doherty amplifier, the output power, linearity, and DC power can be adjusted to provide a specified output, where the specification for the output can include the maintaining of desired DC power and linearity. The Doherty power amplifier can be used in a satellite payload or other application utilizing solid state power amplifiers, while providing the proper amount of RF output power and DC power. A single amplifier can have its bias levels adjusted for different output levels, helping to minimize the number of designs that are required for a given satellite payload, reducing the variety of parts in a satellite payload.

公开(公告)号：US20240154577A1

公开(公告)日：2024-05-09

申请号：US18280822

申请日：2021-08-26

申请人： Mitsubishi Electric Corporation

发明人： Guillaume REGNAT ,  Remi PERRIN ,  Guillaume LEFEVRE

IPC分类号： H03F1/32 ,  H03F1/02 ,  H03F3/24

CPC分类号： H03F1/3205 ,  H03F1/0216 ,  H03F3/245

摘要： The present invention concerns a linear amplifier for providing a sinusoidal waveform to a load, characterized in that the linear amplifier is composed of an asymmetric amplifier and a H-bridge module, the asymmetric amplifier comprises at least one transistor that amplifies a full wave rectified sinus signal that is transformed by the H bridge module into a sinewave signal that is provided to the load.

公开(公告)号：US11978786B2

公开(公告)日：2024-05-07

申请号：US17495588

申请日：2021-10-06

申请人： Murata Manufacturing Co., Ltd.

发明人： Isao Obu ,  Yasunari Umemoto ,  Masahiro Shibata ,  Shigeki Koya ,  Masao Kondo ,  Takayuki Tsutsui

IPC分类号： H01L29/737 ,  H01L21/02 ,  H01L21/285 ,  H01L21/306 ,  H01L21/308 ,  H01L21/311 ,  H01L23/00 ,  H01L27/102 ,  H01L29/08 ,  H01L29/10 ,  H01L29/205 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66 ,  H01L29/735 ,  H03F1/30 ,  H03F1/56 ,  H03F3/195 ,  H03F3/21 ,  H03F3/213 ,  H03F3/24

CPC分类号： H01L29/7371 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/28575 ,  H01L21/30612 ,  H01L21/308 ,  H01L21/31111 ,  H01L24/00 ,  H01L29/0813 ,  H01L29/0817 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/205 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/66318 ,  H03F1/56 ,  H03F3/195 ,  H03F3/211 ,  H03F3/213 ,  H03F3/245 ,  H01L29/452 ,  H03F1/302 ,  H03F2200/222 ,  H03F2200/267 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/451

摘要： A bipolar transistor includes a collector layer, a base layer, and an emitter layer that are formed in this order on a compound semiconductor substrate. The emitter layer is disposed inside an edge of the base layer in plan view. A base electrode is disposed on partial regions of the emitter layer and the base layer so as to extend from an inside of the emitter layer to an outside of the base layer in plan view. An insulating film is disposed between the base electrode and a portion of the base layer, with the portion not overlapping the emitter layer. An alloy layer extends from the base electrode through the emitter layer in a thickness direction and reaches the base layer. The alloy layer contains at least one element constituting the base electrode and elements constituting the emitter layer and the base layer.

公开(公告)号：US20240146262A1

公开(公告)日：2024-05-02

申请号：US18548214

申请日：2021-06-30

申请人： Mitsubishi Electric Corporation

发明人： Ko KANAYA ,  Kazuya YAMAMOTO

IPC分类号： H03F3/24 ,  H01L23/66 ,  H03F1/56 ,  H03F3/195

CPC分类号： H03F3/245 ,  H01L23/66 ,  H03F1/56 ,  H03F3/195 ,  H01L2223/6611 ,  H01L2223/6655 ,  H03F2200/451

摘要： A power amplifier according to the present disclosure includes an input terminal that receives a high-frequency signal from an outside, an MMIC that receives the high-frequency signal via the input terminal and amplifies the high-frequency signal, an input matching circuit, a transistor that receives, via the input matching circuit, the high-frequency signal amplified by the MMIC and amplifies the high-frequency signal, an output matching circuit, an output terminal that receives a drain voltage of the transistor from the outside, receives, via the output matching circuit, the high-frequency signal amplified by the transistor, and outputs the high-frequency signal to the outside and a drain bias circuit board that connects a drain of the transistor and a drain of the MMIC, wherein the transistor and the MMIC are conjugately matched at impedance smaller than 50 Ω.