SYSTEM AND METHOD FOR BARE WAFER INSPECTION
    511.
    发明申请

    公开(公告)号:US20200027693A1

    公开(公告)日:2020-01-23

    申请号:US16517390

    申请日:2019-07-19

    Inventor: Wei FANG Joe Wang

    Abstract: A wafer inspection system includes a controller in communication with an electron-beam inspection tool. The controller includes circuitry to: acquire, via an optical imaging tool, coordinates of defects on a sample; set a Field of View (FoV) of the electron-beam inspection tool to a first size to locate a subset of the defects; determine a position of each defect of the subset of the defects based on inspection data generated by the electron-beam inspection tool during a scanning of the sample; adjust the coordinates of the defects based on the determined positions of the subset of the defects; and set the FoV of the electron-beam inspection tool to a second size to locate additional defects based on the adjusted coordinates.

    METHOD AND APPARATUS FOR PURIFYING TARGET MATERIAL FOR EUV LIGHT SOURCE

    公开(公告)号:US20200015343A1

    公开(公告)日:2020-01-09

    申请号:US16572131

    申请日:2019-09-16

    Abstract: A deoxidation system for purifying target material for an EUV light source includes a furnace having a central region and a heater for heating the central region in a uniform manner. A vessel is inserted in the central region of the furnace, and a crucible is disposed within the vessel. A closure device covers an open end of the vessel to form a seal having vacuum and pressure capability. The system also includes a gas input tube, a gas exhaust tube, and a vacuum port. A gas supply network is coupled in flow communication with an end of the gas input tube and a gas supply network is coupled in flow communication with an end of the gas exhaust tube. A vacuum network is coupled in flow communication with one end of the vacuum port. A method and apparatus for purifying target material also are described.

    DETERMINATION OF STACK DIFFERENCE AND CORRECTION USING STACK DIFFERENCE

    公开(公告)号:US20200012198A1

    公开(公告)日:2020-01-09

    申请号:US16575711

    申请日:2019-09-19

    Abstract: A method including: obtaining a measurement of a metrology target on a substrate processed using a patterning process, the measurement having been obtained using measurement radiation; and deriving a parameter of interest of the patterning process from the measurement, wherein the parameter of interest is corrected by a stack difference parameter, the stack difference parameter representing an un-designed difference in physical configuration between adjacent periodic structures of the target or between the metrology target and another adjacent target on the substrate.

    Metrology recipe selection
    518.
    发明授权

    公开(公告)号:US10527953B2

    公开(公告)日:2020-01-07

    申请号:US15706625

    申请日:2017-09-15

    Abstract: A method including evaluating a plurality of substrate measurement recipes for measurement of a metrology target processed using a patterning process, against stack sensitivity and overlay sensitivity, and selecting one or more substrate measurement recipes from the plurality of substrate measurement recipes that have a value of the stack sensitivity that meets or crosses a threshold and that have a value of the overlay sensitivity within a certain finite range from a maximum or minimum value of the overlay sensitivity.

    LITHOGRAPHIC METHOD AND APPARATUS
    519.
    发明申请

    公开(公告)号:US20200004163A1

    公开(公告)日:2020-01-02

    申请号:US16558265

    申请日:2019-09-02

    Abstract: A measurement method comprising using multiple radiation poles to illuminate a diffraction grating on a mask at a mask side of a projection system of a lithographic apparatus, coupling at least two different resulting diffraction orders per illumination pole through the projection system, using the projection system to project the diffraction orders onto a grating on a wafer such that a pair of combination diffraction orders is formed by diffraction of the diffraction orders, coupling the combination diffraction orders back through the projection system to detectors configured to measure the intensity of the combination diffraction orders, and using the measured intensity of the combination diffraction orders to measure the position of the wafer grating.

Patent Agency Ranking