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    NANOTUBE BASED TRANSISTOR STRUCTURE, METHOD OF FABRICATION AND USES THEREOF
    517.
    发明申请
    NANOTUBE BASED TRANSISTOR STRUCTURE, METHOD OF FABRICATION AND USES THEREOF 审中-公开

    公开(公告)号：US20190018041A1

    公开(公告)日：2019-01-17

    申请号：US16120375

    申请日：2018-09-03

    Applicant: YEDA RESEARCH AND DEVELOPMENT CO. LTD.

    Inventor： Shahal ILANI ,  Sharon Pecker ,  Avishai Benyamini ,  Jonah Waissman ,  Assaf Hamo ,  Maayan Honig ,  Joseph Sulpizio ,  Lior Ella

    IPC: G01Q60/16 ,  H01L29/06 ,  H01L29/10 ,  H01L29/76

    Abstract: A method for use in construction of an electronic device and a transistor structure are presented. The method comprising: providing one or more nanotubes grown on a surface of a first substrate; providing a desired electrode arrangement fabricated on a surface of a second substrate. The electrode arrangement comprises at least two elevated source and drain electrodes and one or more gate electrodes located in between said elevated source and drain electrodes. The method also comprises bringing the electrode arrangement on the second substrate to close proximity with the first substrate such that surfaces of the first and second substrates face each other; scanning said first substrate with said electrode arrangement and determining contact of electrodes of the electrode arrangement with a nanotube located on the first substrate; and detaching said nanotube from the first substrate to provide a transistor structure comprising an isolated nanotube between the source and drain electrodes. The invention further provides systems comprising electronic devices and transistor structures of the invention. The invention further provides methods of use, the methods utilize electronic devices and transistor structures of the invention.

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