MEMORY COMPONENT HAVING INTERNAL READ-MODIFY-WRITE OPERATION

    公开(公告)号:US20220357893A1

    公开(公告)日:2022-11-10

    申请号:US17824665

    申请日:2022-05-25

    Applicant: Rambus Inc.

    Abstract: An memory component includes a memory bank and a command interface to receive a read-modify-write command, having an associated read address indicating a location in the memory bank and to either access read data from the location in the memory bank indicated by the read address after an adjustable delay period transpires from a time at which the read-modify-write command was received or to overlap multiple read-modify-write commands. The memory component further includes a data interface to receive write data associated with the read-modify-write command and an error correction circuit to merge the received write data with the read data to form a merged data and write the merged data to the location in the memory bank indicated by the read address.

    OPTIMIZING POWER IN A MEMORY DEVICE
    532.
    发明申请

    公开(公告)号:US20220350390A1

    公开(公告)日:2022-11-03

    申请号:US17748704

    申请日:2022-05-19

    Applicant: Rambus Inc.

    Abstract: Embodiments generally relate to a memory device. In one embodiment, the memory device includes a clock receiver circuit that receives an external clock signal and provides an internal clock signal. The memory device also includes a delay-locked loop circuit (DLL) having an input, and a circuit that receives the internal clock signal. The circuit selects which pulses of the internal clock signal are applied to the input of the DLL, such that no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval. In another embodiment, a method includes receiving an external clock signal at a clock receiver circuit, receiving an internal clock signal from the clock receiver circuit, and selecting which pulses of the internal clock signal are applied to an input of a DLL, where no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval.

    Dual-domain combinational logic circuitry

    公开(公告)号:US11481192B1

    公开(公告)日:2022-10-25

    申请号:US17363940

    申请日:2021-06-30

    Applicant: Rambus Inc.

    Abstract: A combinational logic circuit includes input circuitry to receive a first and second input signals that transition between supply voltages of first and second voltage domain, respectively. The input circuitry generates, based on the first and second input signals, a first internal signal that transitions between one of the supply voltages of the first voltage domain and one of the supply voltages of the second voltage domain. Output circuitry within the combinational logic circuit generates an output signal that transitions between the upper and lower supply voltages of the first voltage domain in response to transition of the first internal signal.

    Dynamically changing data access bandwidth by selectively enabling and disabling data links

    公开(公告)号:US11474590B2

    公开(公告)日:2022-10-18

    申请号:US16921159

    申请日:2020-07-06

    Applicant: Rambus Inc.

    Abstract: Bandwidth for information transfers between devices is dynamically changed to accommodate transitions between power modes employed in a system. The bandwidth is changed by selectively enabling and disabling individual control links and data links that carry the information. During a highest bandwidth mode for the system, all of the data and control links are enabled to provide maximum information throughout. During one or more lower bandwidth modes for the system, at least one data link and/or at least one control link is disabled to reduce the power consumption of the devices. At least one data link and at least one control link remain enabled during each low bandwidth mode. For these links, the same signaling rate is used for both bandwidth modes to reduce latency that would otherwise be caused by changing signaling rates. Also, calibration information is generated for disabled links so that these links may be quickly brought back into service.

    DRAM interface mode with improved channel integrity and efficiency at high signaling rates

    公开(公告)号:US11468925B2

    公开(公告)日:2022-10-11

    申请号:US17299554

    申请日:2019-12-02

    Applicant: Rambus Inc.

    Abstract: An IC memory controller includes a first controller command/address (C/A) interface to transmit first and second read commands for first and second read data to a first memory C/A interface of a first bank group of memory. A second command/address (C/A) interface transmits third and fourth read commands for third and fourth read data to a second memory C/A interface of a second bank group of memory. For a first operating mode, the first and second read data are received after respective first delays following transmission of the first and second read commands and at a first serialization ratio. For a second operating mode, the first and second read data are received after respective second and third delays following transmission of the first and second read commands. The second and third delays are different from the first delays and from each other. The first and second data are received at a second serialization ratio that is different than the first serialization ratio.

    Memory Controllers, Systems, and Methods Supporting Multiple Request Modes

    公开(公告)号:US20220301602A1

    公开(公告)日:2022-09-22

    申请号:US17665544

    申请日:2022-02-06

    Applicant: Rambus Inc.

    Abstract: A memory system includes a memory controller with a plurality N of memory-controller blocks, each of which conveys independent transaction requests over external request ports. The request ports are coupled, via point-to-point connections, to from one to N memory devices, each of which includes N independently addressable memory blocks. All of the external request ports are connected to respective external request ports on the memory device or devices used in a given configuration. The number of request ports per memory device and the data width of each memory device changes with the number of memory devices such that the ratio of the request-access granularity to the data granularity remains constant irrespective of the number of memory devices.

    Data transmission using delayed timing signals

    公开(公告)号:US11451218B2

    公开(公告)日:2022-09-20

    申请号:US16880694

    申请日:2020-05-21

    Applicant: Rambus Inc.

    Abstract: An integrated circuit includes a delay circuit and first and second interface circuits. The delay circuit delays a first timing signal by an internal delay to generate an internal timing signal. The first interface circuit communicates data to an external device in response to the internal timing signal. The second interface circuit transmits an external timing signal for capturing the data in the external device. An external delay is added to the external timing signal in the external device to generate a delayed external timing signal. The delay circuit sets the internal delay based on a comparison between the delayed external timing signal and a calibration signal transmitted by the first interface circuit.

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