摘要:
A thin film transistor array panel according to an embodiment of the present invention includes: a gate line; a data line intersecting the gate line; a thin film transistor connected to the gate line and the data line; a pixel electrode connected to the thin film transistor; and a shielding electrode electrically isolated from the data line, covering the data line at least in part, and having an aperture exposing the data line.
摘要:
A thin film transistor array panel according to an embodiment of the present invention includes: a gate line; a data line intersecting the gate line; a thin film transistor connected to the gate line and the data line; a pixel electrode connected to the thin film transistor; and a shielding electrode electrically isolated from the data line, covering the data line at least in part, and having an aperture exposing the data line.
摘要:
A display panel includes a plurality of gate lines, a plurality of source lines crossing the gate lines, a first integration gate line, a first pixel part, a second pixel part and a third pixel part. The first integration gate line integrates a (6K-5)-th gate line, a (6K-3)-th gate line and a (6K-1)-th gate line of the plurality of gate lines, where K is a natural number. The first pixel part, the second pixel part and the third pixel part are arranged in a same column. The first pixel part is driven by a first switching device electrically connected to the (6K-5)-th gate line and a (3K-2)-th source line of the plurality of source lines. The second pixel part is driven by a second switching device electrically connected to the (6K-3)-th gate line and a (3K-1)-th source line of the plurality of source lines. The third pixel part is driven by a third switching device electrically connected to the (6K-1)-th gate line and a 3K-th source line of the plurality of source lines.
摘要:
A thin film diode panel has a insulating substrate, a first and second gate lines (121, 122) formed on the insulating substrate, a reflection electrode (190a) and a transmission electrode (190b) formed on the insulating substrate, A first MIM diode (D1) is formed on the insulating substrate and connected to the first gate line (121) and the reflection electrode (190a). A second MIM diode (D2) is formed on the insulating substrate and connected to the second gate line (122) and the reflection electrode (190a). A third MIM diode (D1) is formed on the insulating substrate and connecting the first gate line (121) and the transmission electrode (190b). A fourth MIM diode (D21) is formed on the insulating substrate and connecting the second gate line (122) and the transmission electrode (190b). At least one of the first to fourth MIM diodes has a substantially different current-voltage (I-V) characteristic from the others.
摘要:
A thin film transistor array panel is provided, which includes: a substrate; a plurality of first signal lines formed on the substrate; a plurality of second signal lines intersecting the first signal lines to define pixel areas; first and second pixel electrodes disposed substantially in a pixel area and having different areas; a plurality of thin film transistors connected to the first and the second signal lines and at least one of the first and the second pixel electrodes; a coupling electrode overlapping the second pixel electrode; and a tilt direction defining member for determining tilt directions of liquid crystal molecules formed on the substrate.
摘要:
A liquid crystal display panel includes n-number of gate lines, (m+1)-number of data lines and (m×n)-number of pixels, wherein the ‘n’ and ‘m’ are natural numbers. The gate lines are extended in a first direction. The data lines are extended in a second direction that is substantially perpendicular to the first direction. The first and last data lines are electrically connected to each other. The pixels are arranged in a matrix shape. M-number of the pixels is arranged along the first direction, and n-number of the pixels is arranged along the second direction. A pixel electrode of the pixels arranged in the second direction are electrically connected to left and right data lines alternately to enhance a display quality and reduce power consumption.
摘要:
A thin film transistor is provided, which includes: a semiconductor layer including an intrinsic portion; a gate electrode overlapping the intrinsic portion; a gate insulating layer disposed between the semiconductor layer and the gate electrode; and source and drain electrodes that have edges opposing each other with respect to the intrinsic portion of the semiconductor layer and are connected to the semiconductor layer, wherein the intrinsic portion has a curved surface contacting the gate insulating layer.
摘要:
A thin film diode panel comprises a pixel electrode formed on a substrate, the pixel electrode including a stem portion and a plurality of branch portions extended from the stem portion, and a data electrode line formed on the substrate, the data electrode line including a plurality of branch electrodes formed parallel to the plurality of branch portions. The plurality of branch portions may extend in a direction perpendicular to the stem portion and the plurality of branch electrodes may extend in a direction perpendicular to the data electrode line.
摘要:
A liquid crystal display panel includes n-number of gate lines, (m+1)-number of data lines and (m×n)-number of pixels, wherein the ‘n’ and ‘m’ are natural numbers. The gate lines are extended in a first direction. The data lines are extended in a second direction that is substantially perpendicular to the first direction. The first and last data lines are electrically connected to each other. The pixels are arranged in a matrix shape. M-number of the pixels is arranged along the first direction, and n-number of the pixels is arranged along the second direction. A pixel electrode of the pixels arranged in the second direction are electrically connected to left and right data lines alternately to enhance a display quality and reduce power consumption.
摘要:
In connection with various example embodiments, an organic electronic device is provided with an organic material that is susceptible to decreased mobility due to the trapping of electron charge carriers in response to exposure to air. The organic material is doped with an n-type dopant that, when combined with the organic material, effects air stability for the doped organic material (e.g., exhibits a mobility that facilitates stable operation in air, such as may be similar to operation in inert environments). Other embodiments are directed to organic electronic devices n-doped and exhibiting such air stability.