AIR-STABLE N-CHANNEL ORGANIC ELECTRONIC DEVICES
    1.
    发明申请
    AIR-STABLE N-CHANNEL ORGANIC ELECTRONIC DEVICES 有权
    空气稳定的N沟道有机电子器件

    公开(公告)号:US20110248267A1

    公开(公告)日:2011-10-13

    申请号:US13079879

    申请日:2011-04-05

    IPC分类号: H01L21/22 H01L29/04

    摘要: In connection with various example embodiments, an organic electronic device is provided with an organic material that is susceptible to decreased mobility due to the trapping of electron charge carriers in response to exposure to air. The organic material is doped with an n-type dopant that, when combined with the organic material, effects air stability for the doped organic material (e.g., exhibits a mobility that facilitates stable operation in air, such as may be similar to operation in inert environments). Other embodiments are directed to organic electronic devices n-doped and exhibiting such air stability.

    摘要翻译: 结合各种示例实施例,有机电子器件被提供有有机材料,其由于电子电荷载体响应于暴露于空气而被俘获而易于降低迁移率。 有机材料掺杂有n型掺杂剂,当与有机材料组合时,掺杂的有机材料具有空气稳定性(例如,表现出促进在空气中稳定运行的迁移率,例如可以类似于在惰性中的操作) 环境)。 其他实施方案涉及n掺杂并表现出这种空气稳定性的有机电子器件。

    Air-stable n-channel organic electronic devices
    2.
    发明授权
    Air-stable n-channel organic electronic devices 有权
    空气稳定的n沟道有机电子器件

    公开(公告)号:US09040400B2

    公开(公告)日:2015-05-26

    申请号:US13079879

    申请日:2011-04-05

    摘要: In connection with various example embodiments, an organic electronic device is provided with an organic material that is susceptible to decreased mobility due to the trapping of electron charge carriers in response to exposure to air. The organic material is doped with an n-type dopant that, when combined with the organic material, effects air stability for the doped organic material (e.g., exhibits a mobility that facilitates stable operation in air, such as may be similar to operation in inert environments). Other embodiments are directed to organic electronic devices n-doped and exhibiting such air stability.

    摘要翻译: 结合各种示例实施例,有机电子器件被提供有有机材料,其由于电子电荷载体响应于暴露于空气而被俘获而易于降低迁移率。 有机材料掺杂有n型掺杂剂,当与有机材料组合时,掺杂的有机材料具有空气稳定性(例如,表现出促进在空气中稳定运行的迁移率,例如可以类似于在惰性中的操作) 环境)。 其他实施方案涉及n掺杂并表现出这种空气稳定性的有机电子器件。

    VERFAHREN ZUR HERSTELLUNG VON MIT RYLENTETRACARBONSAEUREDIIMIDEN BESCHICHTETEN SUBSTRATEN

    公开(公告)号:US20090078312A1

    公开(公告)日:2009-03-26

    申请号:US12212199

    申请日:2008-09-17

    CPC分类号: C07D471/04

    摘要: The present invention relates to a process for producing a substrate coated with rylenetetracarboximides, in which a substrate is treated with an N,N′-bisubstituted rylenetetracarboximide and the treated substrate is heated to a temperature at which the N,N′-bisubstituted rylenetetracarboximide is converted to the corresponding N,N′-unsubstituted compound. The present invention further relates to semiconductor units, organic solar cells, excitonic solar cells and organic light-emitting diodes which comprise a substrate produced by this process. The present invention further relates to a process for preparing N,N′-unsubstituted rylenetetracarboximides, in which the corresponding N,N′-bisubstituted rylenetetracarboximides are provided and heated to a temperature at which these compounds are converted to the corresponding N,N′-unsubstituted compounds.

    摘要翻译: 本发明涉及一种制备涂覆有四环四甲酰亚胺的基材的方法,其中用N,N'-二取代的三环四溴二酰亚胺处理基材,将处理过的基材加热至N,N'-二取代的四环四溴二酰亚胺 转化为相应的N,N'-未取代的化合物。 本发明还涉及半导体单元,有机太阳能电池,激子太阳能电池和有机发光二极管,其包括通过该方法制造的基板。 本发明进一步涉及制备N,N'-未取代的四环四甲酰亚胺的方法,其中提供相应的N,N'-二取代的四环四甲酰亚胺,加热至这些化合物转化为相应的N, 未取代的化合物。

    n-Type doped organic materials and methods therefor
    7.
    发明授权
    n-Type doped organic materials and methods therefor 有权
    n型掺杂有机材料及其方法

    公开(公告)号:US09133130B2

    公开(公告)日:2015-09-15

    申请号:US13080564

    申请日:2011-04-05

    申请人: Peng Wei Zhenan Bao

    发明人: Peng Wei Zhenan Bao

    摘要: In accordance with various embodiments, an organic electronic device includes an n-type dopant material including an imidazole-based material having a hydrogen-based material bonded between nitrogen atoms. The n-type dopant material n-dopes an organic material, and can be used to mitigate degradation in mobility due to conditions such as exposure to ambient atmosphere, which can effect an undesirable reduction in charge transport. Other embodiments are directed to carbon nanotubes or graphene structures with this type of n-type dopant, wherein the Fermi level for the carbon nanotubes or graphene structures is below −2.5 eV to effect such n-type doping.

    摘要翻译: 根据各种实施方案,有机电子器件包括n型掺杂剂材料,其包括在氮原子之间键合有氢基材料的咪唑类材料。 n型掺杂剂材料掺杂有机材料,并且可以用于减轻由于诸如暴露于环境大气的条件而导致的迁移率的降低,这可能导致电荷传输的不期望的减少。 其他实施方案涉及具有这种类型的n型掺杂剂的碳纳米管或石墨烯结构,其中碳纳米管或石墨烯结构的费米能级低于-2.5eV以实现这种n型掺杂。