公开(公告)号：US20120106935A1

公开(公告)日：2012-05-03

申请号：US13257273

申请日：2010-03-16

申请人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas G. Hegedus

发明人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas G. Hegedus

IPC分类号： F27D11/12

CPC分类号： C23C16/45565 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/4557 ,  C23C16/4583 ,  C23C16/54

摘要： Embodiments of the invention generally relate to apparatuses and methods for chemical vapor deposition (CVD). In one embodiment, a heating lamp assembly for a CVD reactor system is provided which includes a lamp housing disposed on an upper surface of a support base and containing a plurality of lamps extending from a first lamp holder to a second lamp holder. The lamps may have split filament lamps and/or non-split filament lamps, and in some examples, split and non-split filament may be alternately disposed between the first and second lamp holders. A reflector may be disposed on the upper surface of the support base between the first and second lamp holders. In another embodiment, the method includes exposing a lower surface of a wafer carrier to energy emitted from the heating lamp assembly and heating the wafer carrier to a predetermined temperature.

摘要翻译： 本发明的实施方案一般涉及用于化学气相沉积（CVD）的装置和方法。 在一个实施例中，提供了一种用于CVD反应器系统的加热灯组件，其包括设置在支撑基座的上表面上并包含从第一灯座延伸到第二灯座的多个灯的灯壳体。 灯可以具有裂开的灯丝灯和/或非分裂灯丝灯，并且在一些示例中，分裂和非分裂灯丝可以​​交替地设置在第一和第二灯座之间。 反射器可以设置在第一和第二灯座之间的支撑基座的上表面上。 在另一个实施例中，该方法包括将晶片载体的下表面暴露于从加热灯组件发射的能量并将晶片载体加热至预定温度。

公开(公告)号：US20120067286A1

公开(公告)日：2012-03-22

申请号：US13257264

申请日：2010-03-16

申请人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas G. Hegedus

发明人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas G. Hegedus

IPC分类号： C23C16/455 ,  C23C16/52 ,  C23C16/46

CPC分类号： C23C16/45565 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/4557 ,  C23C16/4583 ,  C23C16/54

摘要： Embodiments of the invention generally relate to apparatuses and methods for chemical vapor deposition (CVD) processes. In one embodiment, a CVD reactor has a reactor lid assembly disposed on a reactor body and containing a first showerhead assembly, an isolator assembly, a second showerhead assembly, and an exhaust assembly consecutively and linearly disposed next to each other on a lid support. The CVD reactor further contains first and second faceplates disposed on opposite ends of the reactor body, wherein the first showerhead assembly is disposed between the first faceplate and the isolator assembly and the exhaust assembly is disposed between the second showerhead assembly and the second faceplate. The reactor body has a wafer carrier disposed on a wafer carrier track and a lamp assembly disposed below the wafer carrier track and containing a plurality of lamps which may be utilized to heat wafers disposed on the wafer carrier.

摘要翻译： 本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置和方法。 在一个实施方案中，CVD反应器具有反应器盖组件，反应器盖组件设置在反应器主体上，并且在盖支撑件上彼此相邻并且连续并线性地设置有第一淋浴头组件，隔离器组件，第二淋浴头组件和排气组件。 CVD反应器还包含设置在反应器主体的相对端上的第一和第二面板，其中第一喷头组件设置在第一面板和隔离器组件之间，排气组件设置在第二喷头组件和第二面板之间。 反应器主体具有设置在晶片载体轨道上的晶片载体和设置在晶片载体轨道下方的灯组件，并且容纳可用于加热设置在晶片载体上的晶片的多个灯。

公开(公告)号：US20120055405A1

公开(公告)日：2012-03-08

申请号：US13294709

申请日：2011-11-11

申请人： Blake Koelmel ,  Alexander N. Lerner ,  Joseph M. Ranish ,  Kedarnath Sangam ,  Khurshed Sorabji

发明人： Blake Koelmel ,  Alexander N. Lerner ,  Joseph M. Ranish ,  Kedarnath Sangam ,  Khurshed Sorabji

IPC分类号： C23C16/458 ,  B05C13/02

CPC分类号： H01L21/6838 ,  H01L21/67115

摘要： An apparatus and method for supporting, positioning and rotating a substrate are provided. In one embodiment, a support assembly for supporting a substrate includes an upper base plate and a lower base plate. The substrate is floated on a thin layer of air over the upper base plate. A positioning assembly includes a plurality of air bearing edge rollers or air flow pockets used to position the substrate in a desired orientation inside above the upper base plate. A plurality of slanted apertures or air flow pockets are configured in the upper base plate for flowing gas therethrough to rotate the substrate to ensure uniform heating during processing.

摘要翻译： 提供了用于支撑，定位和旋转衬底的装置和方法。 在一个实施例中，用于支撑衬底的支撑组件包括上基板和下基板。 衬底浮在上层底板上的薄层空气上。 定位组件包括多个空气轴承边缘辊或气流袋，其用于将衬底定位在上部基板的上方所期望的取向。 多个倾斜的孔或气流袋被配置在上基板中，用于使气体流过其中以旋转基板以确保在加工期间的均匀加热。

公开(公告)号：US20100209626A1

公开(公告)日：2010-08-19

申请号：US12725318

申请日：2010-03-16

申请人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

发明人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

IPC分类号： C23C16/46

CPC分类号： C23C16/4583 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/481 ,  C23C16/54 ,  C30B25/025 ,  C30B25/10 ,  C30B29/40 ,  C30B29/42 ,  H01L21/67115 ,  H01L21/67784

摘要： Embodiments of the invention generally relate to methods for chemical vapor deposition (CVD) processes. In one embodiment, a method for heating a substrate or a substrate susceptor within a vapor deposition reactor system includes exposing a lower surface of a substrate susceptor, such as a wafer carrier, to energy emitted from a heating lamp assembly, and heating the substrate susceptor to a predetermined temperature. The heating lamp assembly generally contains a lamp housing disposed on an upper surface of a support base and contains at least one lamp holder, a plurality of lamps extending from the lamp holder, and a reflector disposed on the upper surface of the support base, next to the lamp holder, and below the lamps. The plurality of lamps may have split filament lamps and/or non-split filament lamps for heating inner and outer portions of the substrate susceptor.

摘要翻译： 本发明的实施方案一般涉及用于化学气相沉积（CVD）方法的方法。 在一个实施例中，一种用于加热气相沉积反应器系统内的衬底或衬底基座的方法包括将诸如晶片载体的衬底基座的下表面暴露于从加热灯组件发射的能量，以及加热衬底基座 达到预定温度。 加热灯组件通常包括设置在支撑基座的上表面上的灯壳，并且包含至少一个灯座，从灯座延伸的多个灯和设置在支撑座的上表面上的反射器 到灯座和灯下方。 多个灯可以具有用于加热衬底基座的内部和外部的分离的灯丝灯和/或非分裂灯丝灯。

公开(公告)号：US20100209620A1

公开(公告)日：2010-08-19

申请号：US12725296

申请日：2010-03-16

申请人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

发明人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

IPC分类号： C23C16/46

CPC分类号： C23C16/4583 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/481 ,  C23C16/54 ,  C30B25/025 ,  C30B25/12 ,  C30B29/40 ,  C30B29/42 ,  H01L21/67115 ,  H01L21/67784

摘要： Embodiments of the invention generally relate to methods for chemical vapor deposition (CVD) processes. In one embodiment, a method for processing a wafer within a vapor deposition reactor is provided which includes heating at least one wafer disposed on a wafer carrier by exposing a lower surface of the wafer carrier to radiation emitted from a lamp assembly and flowing a liquid through a passageway extending throughout the reactor to maintain the reactor lid assembly at a predetermined temperature, such as within a range from about 275° C. to about 325° C. The method further includes traversing the wafer carrier along a wafer carrier track through at least a chamber containing a showerhead assembly and an isolator assembly and another chamber containing a showerhead assembly and an exhaust assembly, and removing gases from the reactor through the exhaust assembly.

摘要翻译： 本发明的实施方案一般涉及用于化学气相沉积（CVD）方法的方法。 在一个实施例中，提供了一种用于在气相沉积反应器内处理晶片的方法，其包括通过将晶片载体的下表面暴露于从灯组件发射的辐射并使液体流过而使加热至少一个设置在晶片载体上的晶片 通过整个反应器延伸的通道，以将反应器盖组件保持在预定的温度，例如在约275℃至约325℃的范围内。该方法还包括至少通过晶片载体轨道横穿晶片载体 包含喷头组件和隔离器组件的腔室以及包含喷头组件和排气组件的另一腔室，以及通过排气组件从反应器中除去气体。

公开(公告)号：US07612491B2

公开(公告)日：2009-11-03

申请号：US11675145

申请日：2007-02-15

申请人： Joseph M. Ranish ,  Khurshed Sorabji

发明人： Joseph M. Ranish ,  Khurshed Sorabji

IPC分类号： H01J5/48

CPC分类号： H01K1/58 ,  H01K1/46 ,  H01L21/67115

摘要： A lamp assembly adapted for use in a substrate thermal processing chamber to heat the substrate to temperatures up to at least about 1100° C. is disclosed. In one embodiment, the lamp assembly comprises a bulb enclosing at least one radiation generating filament attached to a pair of leads, a lamp base configured to receive the pair of leads, a sleeve having a wall thickness of at least about 0.013 inches and a potting compound having a thermal conductivity greater than about 100 W/(K-m).

摘要翻译： 公开了适用于基板热处理室以将基板加热至高达至少约1100℃的温度的灯组件。 在一个实施例中，灯组件包括封闭连接到一对引线的至少一个辐射生成细丝的灯泡，被配置为容纳一对引线的灯座，具有至少约0.013英寸的壁厚的套管和一个灌封 具有大于约100W /（Km）的热导率的化合物。

公开(公告)号：US20080142497A1

公开(公告)日：2008-06-19

申请号：US11611061

申请日：2006-12-14

申请人： Khurshed Sorabji ,  Alexander N. Lerner

发明人： Khurshed Sorabji ,  Alexander N. Lerner

IPC分类号： H01L21/67 ,  F27D11/00 ,  H01L21/477 ,  F28F7/00

CPC分类号： H01L21/67098 ,  C30B31/14 ,  H01L21/30 ,  H01L21/67109 ,  H01L21/67115 ,  H01L22/10 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and apparatus for thermally processing a substrate is described. The apparatus includes a substrate support configured to move linearly and/or rotationally by a magnetic drive. The substrate support is also configured to receive a radiant heat source to provide heating region in a portion of the chamber. An active cooling region comprising a cooling plate is disposed opposite the heating region. The substrate may move between the two regions to facilitate rapidly controlled heating and cooling of the substrate.

摘要翻译： 描述了用于热处理衬底的方法和装置。 该装置包括被配置为通过磁驱动线性地和/或旋转移动的基板支撑件。 衬底支撑件还被配置为接收辐射热源以在腔室的一部分中提供加热区域。 包括冷却板的主动冷却区域设置在加热区域的对面。 衬底可以在两个区域之间移动，以便于快速控制衬底的加热和冷却。