公开(公告)号：US06729014B2

公开(公告)日：2004-05-04

申请号：US09953542

申请日：2001-09-17

申请人： Charles C. Lin ,  Cheng T. Horng ,  Min Li ,  Kochan Ju

发明人： Charles C. Lin ,  Cheng T. Horng ,  Min Li ,  Kochan Ju

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

摘要： A method for forming a top spin-valve SyAP GMR read sensor having a novel conductive lead overlay configuration and the sensor so formed. The lead overlay electrically contacts the sensor at a position within the SyAP pinned layer, thus simultaneously assuring improved electrical contact and destroying the GMR properties of the sensor at the junction to improve the definition of the sensor track width.

摘要翻译： 一种用于形成具有新型导电引线覆盖结构的顶部自旋阀SyAP GMR读取传感器的方法和如此形成的传感器。 引线覆盖层在SyAP钉扎层内的位置处电传感器接触传感器，从而同时确保改善的电接触并破坏传感器在接合处的GMR性能，以改善传感器轨道宽度的定义。

公开(公告)号：US06721143B2

公开(公告)日：2004-04-13

申请号：US09933963

申请日：2001-08-22

申请人： You Feng Zheng ,  Kochan Ju ,  Cheng T. Horng ,  Simon Liao ,  Ru Ying Tong

发明人： You Feng Zheng ,  Kochan Ju ,  Cheng T. Horng ,  Simon Liao ,  Ru Ying Tong

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

摘要： As the dimensions of spin valve heads continue to be reduced, a number of difficulties are being encountered. One such is with the longitudinal bias when an external magnetic field can cause reversal of the hard magnet, thereby causing a hysteric response by the head. This coercivity reduction becomes more severe as the hard magnet becomes thinner. This problem has been overcome by inserting a decoupling layer between the antiferromagnetic layer that is used to stabilize the pinned layer of the spin valve itself and the soft ferromagnetic layer that is used for longitudinal biasing. This soft ferromagnetic layer is pinned by a second antiferromagnetic layer deposited on it on its far side away from the first antiferromagnetic layer. The presence of the decoupling layer ensures that the magnetization of the soft layer is determined only by the second antiferromagnetic layer. The inclusion of the decoupling layer allows more latitude in etch depth control during manufacturing.

摘要翻译： 随着自旋阀头的尺寸不断减小，正在遇到许多困难。 当外部磁场可能导致硬磁体的反转时，其中之一是具有纵向偏置，从而导致头部的歇斯底里响应。 随着硬磁体变薄，矫顽力降低变得更严重。 通过在用于稳定自旋阀本身的被钉扎层的反铁磁性层和用于纵向偏置的软铁磁层之间插入去耦层已经克服了这个问题。 该软铁磁层由沉积在其上的远离第一反铁磁性层的远侧的第二反铁磁层固定。 去耦层的存在确保了软层的磁化仅由第二反铁磁层确定。 包含去耦层在制造过程中允许蚀刻深度控制的更大的纬度。

公开(公告)号：US06627390B2

公开(公告)日：2003-09-30

申请号：US09893225

申请日：2001-06-28

申请人： Xue Hua Wu ,  Yi-Chun Liu ,  Yining Hu ,  Jei-Wei Chang ,  Kochan Ju

发明人： Xue Hua Wu ,  Yi-Chun Liu ,  Yining Hu ,  Jei-Wei Chang ,  Kochan Ju

IPC分类号： G03C500

CPC分类号： G11B5/3163 ,  G11B5/3116 ,  G11B5/3967 ,  Y10T29/49032

摘要： A method for forming a plated layer. There is first provided a substrate. There is then formed over the substrate a masking frame employed for masking frame plating a masking frame plated layer within the masking frame, where the masking frame is fabricated to provide an overhang of an upper portion of the masking frame spaced further from the substrate with respect to a lower portion of the masking frame spaced closer to the substrate. Finally, there is then plated the masking frame plated layer within the masking frame. The method is useful for forming masking frame plated magnetic pole tip stack layers with enhanced planarity dimensional control within magnetic transducer elements.

摘要翻译： 一种形成镀层的方法。 首先提供基板。 然后在衬底上形成掩蔽框架，用于掩蔽在屏蔽框架内对屏蔽框架镀层进行屏蔽电镀，其中制造掩模框架以提供与衬底间隔开的掩蔽框架的上部的突出部分， 到掩蔽框架的较靠近衬底间隔的部分。 最后，然后将屏蔽框架镀层电镀在屏蔽框架内。 该方法对于在磁换能器元件内形成具有增强的平面度尺寸控制的掩模框架电镀磁极尖端堆叠层是有用的。

公开(公告)号：US06620530B1

公开(公告)日：2003-09-16

申请号：US09769813

申请日：2001-01-26

申请人： Min Li ,  Cheng T. Horng ,  Ru Ying Tong ,  Simon H. Liao ,  Kochan Ju

发明人： Min Li ,  Cheng T. Horng ,  Ru Ying Tong ,  Simon H. Liao ,  Kochan Ju

IPC分类号： G11B560

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G11B5/3163 ,  H01F10/3268 ,  H01F10/3295 ,  H01F41/302 ,  Y10S428/90 ,  Y10T428/11 ,  Y10T428/1121

摘要： A spin valve structure and a method for manufacturing it are described. The spin valve uses a modified pinned layer that consists of two cobalt iron layers separated by a layer of either ruthenium, iridium, or rhodium. A key feature of the invention is that this spacer layer is significantly thinner (typically 3-4 Angstroms) than similar layers in prior art structures. Normally, when such thin spacer layers are used, annealing fields in excess of 20,000 Oersted are needed to cause the two cobalt iron layers to become antiparallel. The present invention, however, teaches that much lower annealing fields (spanning a limited range) may be used with equal effect. The result is that a very high internal pinning field is created giving devices of this type greater pinned layer stability and reduced pinning reversal. These devices also exhibits a minimum amount of open looping in their hysteresis curves.

摘要翻译： 描述了一种自旋阀结构及其制造方法。 自旋阀使用由两层钴铁层组成的改性钉扎层，其由钌，铱或铑层分开。 本发明的一个关键特征是该间隔层比现有技术结构中相似的层明显更薄（通常为3-4埃）。 通常，当使用这种薄的间隔层时，需要超过20,000奥斯特的退火场，以使两个钴铁层变得反平行。 然而，本发明教导了可以使用相同效果的低得多的退火场（跨越有限范围）。 结果是产生非常高的内部钉扎场，使得这种类型的装置更大的被钉扎层稳定性并减少钉扎反转。 这些装置在其滞后曲线中也表现出最小量的开环。

公开(公告)号：US06596468B1

公开(公告)日：2003-07-22

申请号：US09659790

申请日：2000-09-11

申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Kochan Ju

发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Kochan Ju

IPC分类号： G03C556

CPC分类号： G11B5/313 ,  G11B5/3116 ,  G11B5/3163

摘要： A general process for filling a trench is described with particular emphasis on the formation of step P1 during the manufacture of a magnetic write head. The main feature of this process is that a liftoff mask is used for both the trench formation and the filling processes. As a result of this approach, the area surrounding the trench is not disturbed, the trench depth is not reduced, and the original overall planarity, prior to etching and filling, is maintained.

摘要翻译： 描述了用于填充沟槽的一般过程，其特别强调在制造磁写头期间形成步骤P1。 该过程的主要特征是使用剥离掩模进行沟槽形成和填充过程。 作为这种方法的结果，沟槽周围的区域不受干扰，沟槽深度不减小，并且在蚀刻和填充之前保持原始的整体平面度。

公开(公告)号：US06449131B2

公开(公告)日：2002-09-10

申请号：US09818963

申请日：2001-03-28

申请人： Yimin Guo ,  Kochan Ju ,  Po-Kang Wang ,  Cherng-Chyi Han ,  Hui-Chuan Wang

发明人： Yimin Guo ,  Kochan Ju ,  Po-Kang Wang ,  Cherng-Chyi Han ,  Hui-Chuan Wang

IPC分类号： G11B539

CPC分类号： G11B5/3954 ,  G11B5/3932 ,  H04R15/00 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A dual stripe magnetoresistive (DSMR) sensor element, and a method for fabricating the dual stripe magnetoresistive (DSMR) sensor element. When fabricating the dual stripe magnetoresistive (DSMR) sensor element while employing the method, there are employed two pair of patterned magnetic biasing layers formed of a single magnetic biasing material. The two pair of patterned magnetic biasing layers bias a pair of patterned magnetoresistive (MR) layers in a pair of opposite canted directions. The method employs multiple thermal annealing methods one of which employs a thermal annealing temperature, a thermal annealing exposure time and an extrinsic magnetic bias field such that a first pair of transversely magnetically biased patterned magnetic biasing layers is not substantially demagnetized when forming a second pair of transversely magnetically biased patterned magnetic biasing layers of anti-parallel transverse magnetic bias direction to the first pair of transversely magnetically biased patterned magnetic biasing layers.

摘要翻译： 双条带磁阻（DSMR）传感器元件，以及制造双条磁阻（DSMR）传感元件的方法。 当采用该方法制造双重磁阻（DSMR）传感器元件时，使用由单个磁偏置材料形成的两对图案化的磁偏置层。 两对图案化的磁偏置层在一对相反的倾斜方向上偏置一对图案化磁阻（MR）层。 该方法采用多种热退火方法，其中之一采用热退火温度，热退火暴露时间和非本征磁偏置场，使得当形成第二对的第一对成对的第一对横向磁偏压图案化磁偏置层时，基本上不消磁 向第一对横向磁偏置图案化磁偏置层的横向磁偏置图案化的反平行横向偏磁方向的偏置偏压层。

公开(公告)号：US06396671B1

公开(公告)日：2002-05-28

申请号：US09525670

申请日：2000-03-15

申请人： Cheng T. Horng ,  Mao-Min Chen ,  Kochan Ju ,  Min Li ,  Simon H. Liao ,  Ku-Ying Tong

发明人： Cheng T. Horng ,  Mao-Min Chen ,  Kochan Ju ,  Min Li ,  Simon H. Liao ,  Ku-Ying Tong

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3143 ,  G11B5/3903 ,  H01F10/3268 ,  H01F10/3295 ,  H01F41/325 ,  Y10T29/49044

摘要： A spin valve structure, and method for manufacturing it, are described. The valve is subject to only small bias point shifts by sense current fields while at the same time has good GMR characteristics. This is achieved by introducing a layer of about 15 Angstroms of ruthenium between the seed layer and the free layer. This acts as an effective bias control layer with the added benefit of providing interfaces (to both the seed and the free layer) that are highly favorable to specular reflection of the conduction electrons. The HCP crystal structure of this ruthenium layer also improves the crystalline quality of the free layer thereby improving its performance with respect to the GMR ratio.

摘要翻译： 自旋阀结构及其制造方法。 阀门只能通过感应电流场进行小的偏移点偏移，同时具有良好的GMR特性。 这通过在种子层和自由层之间引入约15埃的钌层来实现。 这充当有效的偏置控制层，具有提供对传导电子的镜面反射非常有利的界面（对种子和自由层）的附加益处。 该钌层的HCP晶体结构也改善了自由层的结晶质量，从而提高了其相对于GMR比的性能。

公开(公告)号：US06322640B1

公开(公告)日：2001-11-27

申请号：US09489969

申请日：2000-01-24

申请人： Rongfu Xiao ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang ,  Jei-Wei Chang ,  Cherng-Chyi Han ,  Kochan Ju

发明人： Rongfu Xiao ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang ,  Jei-Wei Chang ,  Cherng-Chyi Han ,  Kochan Ju

IPC分类号： H01F4100

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  H01F10/3268 ,  H01F41/302 ,  H01L43/12 ,  Y10T29/49034

摘要： A method for forming a magnetically biased magnetoresistive (MR) layer. There is first provided a substrate. There is then formed over the substrate a ferromagnetic magnetoresistive (MR) material layer. There is then forming contacting the ferromagnetic magnetoresistive (MR) material layer a magnetic material layer formed of a first crystalline phase, where the magnetic material layer is formed of a crystalline multiphasic magnetic material having the first crystalline phase which does not appreciably antiferromagnetically exchange couple with the ferromagnetic magnetoresistive (MR) material layer and a second crystalline phase which does appreciably antiferromagnetically exchange couple with the ferromagnetic magnetoresistive (MR) material layer. There is then annealed thermally while employing a first thermal annealing method employing an extrinsic magnetic bias field the magnetic material layer formed of the first crystalline phase to form a magnetically aligned magnetic material layer formed of the first crystalline phase. Finally, there is then annealed thermally while employing a second thermal annealing method without employing an extrinsic magnetic bias field the magnetically aligned magnetic material layer formed of the first crystalline phase to form an antiferromagnetically coupled magnetically aligned magnetic material layer formed of the second crystalline phase. The method may be employed for forming non-parallel antiferromagnetically biased multiple magnetoresistive (MR) layer magnetoresistive (MR) sensor elements while employing a single antiferromagnetic material.

摘要翻译： 一种用于形成磁偏置磁阻（MR）层的方法。 首先提供基板。 然后在衬底上形成铁磁磁阻（MR）材料层。 然后，形成使铁磁性磁阻（MR）材料层与由第一结晶相形成的磁性材料层接触，其中，磁性材料层由结晶多相磁性材料形成，该结晶多相磁性材料具有不明显地反铁磁性交换耦合的第一结晶相 铁磁磁阻（MR）材料层和第二结晶相，其明显地与铁磁性磁阻（MR）材料层反铁磁交换耦合。 然后在使用由第一结晶相形成的磁性材料层的外部磁偏置场的第一热退火方法进行退火，形成由第一结晶相形成的磁性取向的磁性材料层。 最后，在不使用由第一结晶相形成的磁性取向的磁性材料层的外部磁偏置场的情况下，采用第二热退火方法进行退火，形成由第二结晶相形成的反铁磁耦合的磁性取向的磁性材料层。 该方法可以用于在使用单个反铁磁材料的同时形成非平行的反铁磁偏振多磁阻（MR）层磁阻（MR）传感器元件。

公开(公告)号：US06291138B1

公开(公告)日：2001-09-18

申请号：US09360121

申请日：1999-07-23

申请人： Xuehua Wu ,  Yi-Chun Liu ,  Yining Hu ,  Jei-Wei Chang ,  Kochan Ju

发明人： Xuehua Wu ,  Yi-Chun Liu ,  Yining Hu ,  Jei-Wei Chang ,  Kochan Ju

IPC分类号： G03C500

CPC分类号： G11B5/3163 ,  G11B5/3116 ,  G11B5/3967 ,  Y10T29/49032

摘要： A method for forming a plated layer. There is first provided a substrate. There is then formed over the substrate a masking frame employed for masking frame plating a masking frame plated layer within the masking frame, where the masking frame is fabricated to provide an overhang of an upper portion of the masking frame spaced further from the substrate with respect to a lower portion of the masking frame spaced closer to the substrate. Finally, there is then plated the masking frame plated layer within the masking frame. The method is useful for forming masking frame plated magnetic pole tip stack layers with enhanced planarity dimensional control within magnetic transducer elements.

摘要翻译： 一种形成镀层的方法。 首先提供基板。 然后在衬底上形成掩蔽框架，用于掩蔽在屏蔽框架内对屏蔽框架镀层进行屏蔽电镀，其中制造掩模框架以提供与衬底间隔开的掩蔽框架的上部的突出部分， 到掩蔽框架的较靠近衬底间隔的部分。 最后，然后将屏蔽框架镀层电镀在屏蔽框架内。 该方法对于在磁换能器元件内形成具有增强的平面度尺寸控制的掩模框架电镀磁极尖端堆叠层是有用的。

公开(公告)号：US06291087B1

公开(公告)日：2001-09-18

申请号：US09336786

申请日：1999-06-21

申请人： Rongfu Xiao ,  Chyu-Jiuh Torng ,  Kochan Ju ,  Cheng Horng ,  Jei-Wei Chang

发明人： Rongfu Xiao ,  Chyu-Jiuh Torng ,  Kochan Ju ,  Cheng Horng ,  Jei-Wei Chang

IPC分类号： G11B566

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3954 ,  G11B5/66 ,  G11B2005/3996 ,  Y10S428/90 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T428/1121

摘要： A method for forming a magnetoresistive (MR) sensor element, and a magnetoresistive sensor element fabricated in accord with the method. There is first provided a substrate. There is then formed over the substrate a magnetoresistive (MR) layer comprising: (1) a bulk layer of the magnetoresistive (MR) layer formed of a first magnetoresistive (MR) material optimized to provide an enhanced magnetoresistive (MR) resistivity sensitivity of the magnetoresistive (MR) layer; and (2) a surface layer of the magnetoresistive (MR) layer formed of a second magnetoresistive (MR) material optimized to provide an enhanced magnetic exchange bias when forming a magnetic exchange bias layer upon the surface layer of the magnetoresistive (MR) layer. Finally, there is then formed upon the surface layer of the magnetoresistive (MR) layer the magnetic exchange bias layer. The method contemplates an magnetoresistive (MR) sensor element fabricated in accord with the method. The method is particularly useful for forming a dual stripe magnetoresistive (DSMR) sensor element by employing a single magnetic exchange bias material with separate blocking temperatures.

摘要翻译： 一种用于形成磁阻（MR）传感器元件的方法和根据该方法制造的磁阻传感器元件。 首先提供基板。 然后在衬底上形成磁阻（MR）层，包括：（1）由第一磁阻（MR）材料形成的磁阻（MR）层的体层，其被优化以提供增强的磁阻（MR）电阻率敏感性 磁阻（MR）层; 和（2）由第二磁阻（MR）材料形成的磁阻（MR）层的表面层，其优化以在磁阻（MR）层的表面层上形成磁交换偏置层时提供增强的磁交换偏压。 最后，在磁阻（MR）层的表面层上形成磁交换偏置层。 该方法考虑了根据该方法制造的磁阻（MR）传感器元件。 该方法对于通过采用具有单独的阻挡温度的单个磁交换偏压材料形成双重磁阻（DSMR）传感器元件特别有用。