摘要:
Molybdenum titanium sputter targets are provided. In one aspect, the targets are substantially free of the β(Ti, Mo) alloy phase. In another aspect, the targets are substantially comprised of single phase β(Ti, Mo) alloy. In both aspects, particulate emission during sputtering is reduced. Methods of preparing the targets, methods of bonding targets together to produce large area sputter targets, and films produced by the targets, are also provided.
摘要:
Concepts and technologies are described herein for managing recurring appointments without losing historical data associated with the recurring appointments. In accordance with the concepts and technologies disclosed herein, a recurring appointment definition can be modified without deleting the recurring appointment definition and/or losing exceptions, notes, and/or other data associated with the recurring appointment definition. Additionally, the concepts and technologies disclosed herein allow the modification of an existing recurring appointment definition without creating a new recurring appointment definition. Thus, synchronization between rules-based calendaring applications and expansion-based calendaring applications can be accomplished without creating multiple instances of related recurring appointments created due to modifications of the recurring appointment definition.
摘要:
Embodiments of the invention generally relate to solar cells having reduced carrier recombination and methods of forming the same. The solar cells have eutectic local contacts and passivation layers which reduce recombination by facilitating formation of a back surface field (BSF). A patterned aluminum back contact is disposed on the passivation layer for removing current form the solar cell. The patterned back contact reduces the cost-per-watt of the solar cell by using less material than a full-surface back contact. The methods of forming the solar cells include depositing a passivation layer including aluminum oxide and silicon nitride on a back surface of a solar cell, and then forming openings through the passivation layer. A patterned aluminum back contact is disposed on the passivation layer over the holes, and thermally processed to form a silicon-aluminum eutectic within the openings.
摘要:
In various embodiments, sputtering targets are refurbished by spray-depositing a powder within a furrow in the sputtering target to form a layer therein.
摘要:
Concepts and technologies are described herein for managing recurring appointments without losing historical data associated with the recurring appointments. In accordance with the concepts and technologies disclosed herein, a recurring appointment definition can be modified without deleting the recurring appointment definition and/or losing exceptions, notes, and/or other data associated with the recurring appointment definition. Additionally, the concepts and technologies disclosed herein allow the modification of an existing recurring appointment definition without creating a new recurring appointment definition. Thus, synchronization between rules-based calendaring applications and expansion-based calendaring applications can be accomplished without creating multiple instances of related recurring appointments created due to modifications of the recurring appointment definition.
摘要:
Refractory metal products, such as tantalum, can be rejuvenated after metal consumption in selected zones by filling the zones with powder and simultaneously applying focused radiant energy to the powder.
摘要:
The invention relates to high purity MoO2 powder by reduction of ammonium molybdate or molybdenum trioxide using hydrogen as the reducing agent in a rotary or boat furnace. Consolidation of the powder by press/sintering, hot pressing, and/or HIP is used to make discs, slabs, or plates, which are used as sputtering targets. The MoO2 disc, slab, or plate form is sputtered on a substrate using a suitable sputtering method or other physical means to provide a thin film having a desired film thickness. The thin films have properties such as electrical, optical, surface roughness, and uniformity comparable or superior to those of indium-tin oxide (ITO) and zinc-doped ITO in terms of transparency, conductivity, work function, uniformity, and surface roughness. The MoO2 and MoO2 containing thin films can be used in organic light-emitting diodes (OLED), liquid crystal display (LCD), plasma display panel (PDP), field emission display (FED), thin film solar cell, low resistivity ohmic contacts, and other electronic and semiconductor devices.
摘要:
The present invention is directed to a composition consisting essentially of: a) from about 60 to about 99 mole % of SnO2, and b) from about 1 to about 40 mole % of one or more materials selected from the group consisting of i) Nb2O5, ii) NbO, iii) NbO2, iv) WO2, v) a material selected consisting of a) a mixture of MoO2 and Mo and b) Mo, vi) W, vii) Ta2O5, and viii) mixtures thereof, wherein the mole %s are based on the total product and wherein the sum of components a) and b) is 100. The invention is also directed to the sintered product of such composition, a sputtering target made from the sintered product and a transparent electroconductive film made from the composition.
摘要翻译:本发明涉及一种基本上由以下组成的组合物:a)约60-约99摩尔%的SnO 2,和b)约1-约40摩尔%的一种或多种选自i)Nb 2 O 5 ,ii)NbO,iii)NbO 2,iv)WO 2,v)选自a)MoO 2和Mo的混合物和b)Mo,vi)W,vii)Ta 2 O 5和viii)其混合物的材料,其中所述摩尔 %s基于总产物,其中组分a)和b)的总和为100.本发明还涉及这种组合物的烧结产品,由烧结产品制成的溅射靶和由 组成。
摘要:
The invention relates to a sputtering target which has a fine uniform equiaxed grain structure of less than 44 microns, no preferred texture orientation as measured by electron back scattered diffraction (“EBSD”) and that displays no grain size banding or texture banding throughout the body of the target. The invention relates a sputtering target with a lenticular or flattened grain structure, no preferred texture orientation as measured by EBSD and that displays no grain size or texture banding throughout the body of the target and where the target has a layered structure incorporating a layer of the sputtering material and at least one additional layer at the backing plate interface, said layer has a coefficient of thermal expansion (“CTE”) value between the CTE of the backing plate and the CTE of the layer of sputtering material. The invention also relates to thin films and their use of using the sputtering target and other applications, such as coatings, solar devices, semiconductor devices etc. The invention further relates to a process to repair or rejuvenate a sputtering target.
摘要:
A substrate for semiconductor and integrated circuit components including: a core plate containing a Group VIB metal from the periodic table of the elements and/or an anisotropic material, having a first major surface and a second major surface and a plurality of openings extending, at least partially, from the first major surface to the second major surface; and a Group IB metal from the periodic table of the elements or other high thermally conductive material filling at least a portion of the space encompassed by at least some of the openings; and optionally, a layer containing a Group IB metal from the periodic table or other high thermally conductive material disposed over at least a portion of the first major surface and at least a portion of the second major surface. The substrate can be used in electronic devices, which can also include one or more semiconductor components.