Copolymers for photoresists and processes therefor
    52.
    发明授权
    Copolymers for photoresists and processes therefor 失效
    用于光刻胶及其工艺的共聚物

    公开(公告)号:US06872503B2

    公开(公告)日:2005-03-29

    申请号:US10257901

    申请日:2001-05-04

    Abstract: Fluoroolefin/acid group or protected acid group-containing copolymers for photoresist compositions and microlithography methods employing the photoresist compositions are described. These copolymer compositions comprise 1) at least one fluoroolefin, preferably hexafluoroisobutylene, and 2) an acid group or a protected acid group (e.g., a t-alkyl ester, preferably a t-butyl ester), which together impart high ultraviolet (UV) transparency and developability in basic media to these materials. The materials of this invention have high UV transparency, particularly at short wavelengths, e.g., 157 nm and 193 nm, which makes them useful for lithography at these short wavelengths.

    Abstract translation: 描述了用于光致抗蚀剂组合物的氟烯烃/酸基或被保护的含酸基的共聚物和使用光致抗蚀剂组合物的微光刻方法。 这些共聚物组合物包含1)至少一种氟代烯烃,优选六氟异丁烯,以及2)酸性基团或被保护的酸基团(例如,叔烷基酯,优选叔丁基酯),它们共同赋予高紫外(UV) 这些材料的基本媒体的透明度和可开发性。 本发明的材料具有高的UV透明度,特别是在短波长,例如157nm和193nm,这使得它们可用于在这些短波长处的光刻。

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