公开(公告)号：US06676098B2

公开(公告)日：2004-01-13

申请号：US10266725

申请日：2002-10-08

Applicant: Wen-Pin Lin

Inventor： Wen-Pin Lin

IPC: A47G2900

CPC classification number: E05D11/1007 ,  E05D11/087 ,  E05Y2900/606 ,  F16M11/10 ,  F16M2200/041 ,  Y10S248/917 ,  Y10S248/919 ,  Y10S248/923

Abstract: A plane display with a foldable support. The plane display comprises a base and a back plane mounted on a plane display panel. The back plane pivots on the base by a sleeve. The connecting rod is disposed in the sleeve, and slides between a first position and a second position. An L-shaped member is fixed on the connecting rod. When the connecting rod is in the first position, the L-shaped member secures the back plane to the base at a first angle. When the connecting rod is in the second position, the L-shaped member releases the back plane from the base, and the back plane rotates with respect to the base to a second angle.

Abstract translation: 具有可折叠支撑的平面显示。 平面显示器包括安装在平面显示面板上的底座和背面平面。 背板通过套筒在基座上枢转。 连杆设置在套筒中，并在第一位置和第二位置之间滑动。 L形构件固定在连杆上。 当连杆处于第一位置时，L形构件以第一角度将背板固定到基座。 当连杆处于第二位置时，L形构件从基座释放背板，并且背板相对于基座旋转至第二角度。

公开(公告)号：US6139396A

公开(公告)日：2000-10-31

申请号：US478137

申请日：2000-01-05

Applicant: Wen-Pin Lin

Inventor： Wen-Pin Lin

IPC: A63H23/08

CPC classification number: A63H23/08

Abstract: A transparent spherical toy includes upper and lower shell halves. The upper shell half has a bottom end face, a thickness reduced rim portion extending downwardly from the bottom end face, an outer recess formed outside of the inner space and extending upwardly from the bottom end face, and a male thread formed on the rim portion. The lower shell half has a top end face, an inner wall, a ring-shaped shoulder projecting into the inner space from the inner wall adjacent to the top end face so that the rim portion is seated against the shoulder, a female thread formed on the inner wall between the top end face and the shoulder and engaging the male thread, and a notch formed in the top end face above the female thread and aligned with the outer recess. The transparent spherical toy further includes a sealing ring disposed between the shoulder and the rim portion for providing sealing therebetween when the male and female threads engage each other tightly, and a dog mounted rotatably in the outer recess and extending therefrom into the notch for preventing the upper shell half from rotating relative to the lower shell half.

Abstract translation: 透明的球形玩具包括上半壳和下半壳。 上壳半体具有底端面，从底端面向下延伸的厚度减小的边缘部分，形成在内部空间外侧并从底端面向上延伸的外凹部，以及形成在边缘部分上的阳螺纹 。 下壳半体具有顶端面，内壁，环形肩部，从与顶端面相邻的内壁突出到内部空间中，使得边缘部分抵靠肩部安置，阴螺纹形成在 顶端面和肩部之间的内壁和外螺纹接合，以及形成在阴螺纹上方的顶端面中并与外凹部对准的凹口。 所述透明球形玩具还包括设置在所述肩部和所述边缘部分之间的密封环，用于当所述阳螺纹和阴螺纹彼此紧密接合时提供密封，以及可旋转地安装在所述外凹槽中并从其延伸到所述凹口中以防止 上壳半部相对于下半壳旋转一半。

公开(公告)号：US08625361B2

公开(公告)日：2014-01-07

申请号：US13345740

申请日：2012-01-08

Applicant: Pi-Feng Chiu ,  Shyh-Shyuan Sheu ,  Wen-Pin Lin ,  Chih-He Lin

Inventor： Pi-Feng Chiu ,  Shyh-Shyuan Sheu ,  Wen-Pin Lin ,  Chih-He Lin

IPC: G11C7/10 ,  G11C8/16

CPC classification number: G11C8/16 ,  G11C7/14 ,  G11C8/08 ,  G11C8/18 ,  G11C11/1675 ,  G11C11/1693 ,  G11C13/0004 ,  G11C13/0028 ,  G11C13/0061 ,  G11C13/0069 ,  G11C2013/0078

Abstract: A circuit and a method for controlling the write timing of a non-volatile memory are provided. The method includes the following steps. First, a resistance state switching of at least one memory cell of the non-volatile memory executing a writing operation is monitored to output a control signal. The memory cell stores data states with different resistance states. A write timing is input to the memory cell through a timing control line. Next, the write timing is generated based on a clock signal and the control signal. The write timing is enabled at the beginning of a cycle of the clock signal, and is disabled when the memory cell finishes the resistance state switching.

Abstract translation: 提供了用于控制非易失性存储器的写入定时的电路和方法。 该方法包括以下步骤。 首先，监视执行写入操作的非易失性存储器中的至少一个存储单元的电阻状态切换，以输出控制信号。 存储单元存储具有不同电阻状态的数据状态。 通过定时控制线将写时序输入到存储单元。 接下来，基于时钟信号和控制信号来生成写入定时。 写时序在时钟信号的周期开始时被使能，并且当存储器单元完成电阻状态切换时被禁止。

公开(公告)号：US08605493B2

公开(公告)日：2013-12-10

申请号：US13477884

申请日：2012-05-22

Applicant: Shyh-Shyuan Sheu ,  Pei-Chia Chiang ,  Wen-Pin Lin

Inventor： Shyh-Shyuan Sheu ,  Pei-Chia Chiang ,  Wen-Pin Lin

IPC: G11C11/00

CPC classification number: G11C13/0069 ,  G11C13/0004 ,  G11C2013/0092

Abstract: A phase change memory with an operating current that can be gradually increased or gradually decreased. The phase change memory has a phase change storage element, a transistor, and a control circuit. The transistor is operable to adjust the operating current flowing through the phase change storage element. The transistor has a first terminal coupled to a voltage source, a second terminal coupled to the phase change storage element, and a control terminal receiving a control signal from the control circuit. The control circuit is specially designed to limit the transistor in a linear region.

Abstract translation: 具有可逐渐增加或逐渐减小的工作电流的相变存储器。 相变存储器具有相变存储元件，晶体管和控制电路。 晶体管可操作以调节流过相变存储元件的工作电流。 晶体管具有耦合到电压源的第一端子，耦合到相变存储元件的第二端子以及从控制电路接收控制信号的控制端子。 控制电路专门设计用于将晶体管限制在线性区域。

公开(公告)号：US08568933B2

公开(公告)日：2013-10-29

申请号：US12907648

申请日：2010-10-19

Applicant: Wen-Pin Lin

Inventor： Wen-Pin Lin

IPC: H01M12/06

CPC classification number: H01M12/06 ,  B60L11/1896 ,  B60L2200/20 ,  H01M8/20 ,  Y02T90/34

Abstract: A metal-air fuel cell module includes a cap seat connected detachably to a casing and having a plug portion extending into an inner accommodating space in the casing for plugging an opening in the casing; a conductive gas-diffusion sheet disposed in the casing for covering sealingly air inlets in the casing, and permitting air to pass through; an electrolyte solution filled in the inner accommodating space; a metal sheet disposed in the inner accommodating space and connected detachably to the plug portion of the cap seat; a first electrode plate mounted on the casing, extending into the inner accommodating space and in electrical contact with the gas-diffusion sheet; and a second electrode plate mounted in the cap seat, extending into the inner accommodating space and in electrical contact with the metal sheet.

Abstract translation: 金属空气燃料电池模块包括可拆卸地连接到壳体并且具有延伸到壳体中的内部容纳空间中以堵塞壳体中的开口的插塞部分的帽座; 导电气体扩散片，设置在壳体中，用于密封地将盖子中的空气入口覆盖，并允许空气通过; 填充在内部容纳空间中的电解质溶液; 金属片，其设置在所述内部容纳空间中并且可拆卸地连接到所述帽座的所述插塞部分; 安装在壳体上的第一电极板，延伸到内部容纳空间中并与气体扩散片电接触; 以及安装在所述盖座中的第二电极板，延伸到所述内部容纳空间中并与所述金属片电接触。

公开(公告)号：US08422295B1

公开(公告)日：2013-04-16

申请号：US13332402

申请日：2011-12-21

Applicant: Chih-He Lin ,  Wen-Pin Lin ,  Pi-Feng Chiu ,  Shyh-Shyuan Sheu

Inventor： Chih-He Lin ,  Wen-Pin Lin ,  Pi-Feng Chiu ,  Shyh-Shyuan Sheu

IPC: G11C14/00

CPC classification number: G11C14/009

Abstract: A non-volatile random access memory (NV-RAM) and an operation method thereof are provided. The NV-RAM includes a latch unit, a switch, and a first to fourth non-volatile memory elements. First terminals of the first and the third non-volatile memory elements respectively couple to a first voltage and a second voltage. A second terminal of the first non-volatile memory element and a first terminal of the second non-volatile memory element are coupled to a first terminal of the latch unit. A second terminal of the third non-volatile memory element and a first terminal of the fourth non-volatile memory element are coupled to a second terminal of the latch unit. Second terminals of the second and the fourth non-volatile memory element are coupled to a first terminal of the switch. A second terminal of the switch is coupled to a third voltage.

Abstract translation: 提供了非易失性随机存取存储器（NV-RAM）及其操作方法。 NV-RAM包括锁存单元，开关和第一至第四非易失性存储元件。 第一和第三非易失性存储元件的第一端分别耦合到第一电压和第二电压。 第一非易失性存储元件的第二端子和第二非易失性存储器元件的第一端子耦合到锁存单元的第一端子。 第三非易失性存储元件的第二端子和第四非易失性存储元件的第一端子耦合到锁存单元的第二端子。 第二和第四非易失性存储元件的第二端子耦合到开关的第一端子。 开关的第二端子耦合到第三电压。

公开(公告)号：US20120018723A1

公开(公告)日：2012-01-26

申请号：US12967932

申请日：2010-12-14

Applicant: Keng-Li SU ,  Chih-Sheng Lin ,  Wen-Pin Lin ,  John H. Lau

Inventor： Keng-Li SU ,  Chih-Sheng Lin ,  Wen-Pin Lin ,  John H. Lau

IPC: H01L23/58 ,  H01L21/66

CPC classification number: H01L22/34

Abstract: A test structure including at least one ground pad, an input pad, at least one first through-silicon via (TSV), at least one second TSV and an output pad is disclosed. The ground pad receives a ground signal during a test mode. The input pad receives a test signal during the test mode. The first TSV is coupled to the input pad. The output pad is coupled to the second TSV. No connection line occurs between the first and the second TSVs. During the test mode, a test result is obtained according to the signal of at least one of the first and the second TSVs, and structural characteristics can be obtained according to the test result.

Abstract translation: 公开了包括至少一个接地焊盘，输入焊盘，至少一个第一穿透硅通孔（TSV），至少一个第二TSV和输出焊盘的测试结构。 接地焊盘在测试模式下接收接地信号。 在测试模式期间，输入焊盘接收测试信号。 第一TSV耦合到输入板。 输出焊盘耦合到第二TSV。 在第一和第二TSV之间不发生连接线。 在测试模式期间，根据第一和第二TSV中的至少一个的信号获得测试结果，并且可以根据测试结果获得结构特征。

公开(公告)号：US20110317483A1

公开(公告)日：2011-12-29

申请号：US13215491

申请日：2011-08-23

Applicant: Shyh-Shyuan Sheu ,  Lieh-Chiu Lin ,  Pei-Chia Chiang ,  Wen-Pin Lin

Inventor： Shyh-Shyuan Sheu ,  Lieh-Chiu Lin ,  Pei-Chia Chiang ,  Wen-Pin Lin

IPC: G11C11/00

CPC classification number: G11C11/5678 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/0078 ,  G11C2013/0092

Abstract: A data programming circuit for storing a writing data into a memory cell is provided. The data programming circuit includes a control circuit and a current generating circuit. The control circuit generates a control signal according to the writing data. The current generating circuit provides a writing current to the memory cell to change a crystalline state of the memory cell. The writing current has a pulse width corresponding to the writing data, and the crystalline state corresponds to the writing data.

Abstract translation: 提供了一种用于将写入数据存储到存储单元中的数据编程电路。 数据编程电路包括控制电路和电流产生电路。 控制电路根据写入数据生成控制信号。 电流产生电路向存储单元提供写入电流以改变存储单元的结晶状态。 写入电流具有对应于写入数据的脉冲宽度，并且结晶状态对应于写入数据。

公开(公告)号：US20110270555A1

公开(公告)日：2011-11-03

申请号：US12851547

申请日：2010-08-05

Applicant: Ku-Feng Lin ,  Meng-Fan Chang ,  Shyh-Shyuan Sheu ,  Pei-Chia Chiang ,  Wen-Pin Lin ,  Chih-He Lin

Inventor： Ku-Feng Lin ,  Meng-Fan Chang ,  Shyh-Shyuan Sheu ,  Pei-Chia Chiang ,  Wen-Pin Lin ,  Chih-He Lin

IPC: G06F19/00 ,  G01R19/00

CPC classification number: G01R31/2837 ,  G11C13/00 ,  G11C29/021 ,  G11C29/028 ,  G11C2029/0409 ,  H01L22/34

Abstract: A process variation detection apparatus and a process variation detection method are provided. The process variation detection apparatus includes a process variation detector and a compensation signal generator. The process variation detector includes a first process variation detection component, a second process variation detection component and a current comparator. The channel of the first process variation detection component is a first conductive type, and the channel of the second process variation detection component is a second conductive type, wherein the above-mentioned first conductive type is different from the second conductive type. The current comparator is connected to the first process variation detection component and the second process variation detection component for comparing the current difference between the two components and outputting a current comparison result. The compensation signal generator is connected to the process variation detector, and produces a corresponding compensation signal according to the current comparison result.

Abstract translation: 提供了一种过程变化检测装置和工艺变化检测方法。 过程变化检测装置包括处理变化检测器和补偿信号发生器。 过程变化检测器包括第一过程变化检测部件，第二过程变化检测部件和电流比较器。 第一处理变化检测部件的通道是第一导电型，第二处理变化检测部件的通道是第二导电型，其中上述第一导电类型与第二导电类型不同。 电流比较器连接到第一处理变化检测部件和第二处理变化检测部件，用于比较两个部件之间的电流差异并输出当前的比较结果。 补偿信号发生器连接到过程变化检测器，并根据当前比较结果产生相应的补偿信号。

公开(公告)号：US08014194B2

公开(公告)日：2011-09-06

申请号：US12561245

申请日：2009-09-16

Applicant: Shyh-Shyuan Sheu ,  Pei-Chia Chiang ,  Wen-Pin Lin

Inventor： Shyh-Shyuan Sheu ,  Pei-Chia Chiang ,  Wen-Pin Lin

IPC: G11C11/00

CPC classification number: G11C13/0069 ,  G11C13/0004

Abstract: A phase change memory (PCM) in which the phase change storage element is crystallized by a gradually increasing/decreasing operating current. The PCM comprises a switching circuit, the phase change storage element, a bit select switch, a pulse generating module, and a counting module. The switching circuit comprises a plurality of switches, selectively providing branch paths to an output terminal of a current source. The bit select switch controls the conduction between the phase change storage element and the output terminal of the current source. The pulse generating module outputs a pulse signal oscillating between high and low voltage levels. When enabled, the counting module counts the oscillations of the pulse signal, and outputs the count result by a set of digital data. The set of digital data are coupled to the switching circuit to control the switches therein.

Abstract translation: 相变存储元件通过逐渐增加/减小的工作电流而结晶化的相变存储器（PCM）。 PCM包括开关电路，相变存储元件，位选择开关，脉冲发生模块和计数模块。 开关电路包括多个开关，选择性地提供到电流源的输出端的分支路径。 位选择开关控制相变存储元件与电流源的输出端之间的导通。 脉冲发生模块输出在高电平和低电压电平之间振荡的脉冲信号。 当使能时，计数模块对脉冲信号的振荡进行计数，并通过一组数字数据输出计数结果。 该组数字数据耦合到开关电路以控制其中的开关。