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    Memory Cells, Integrated Devices, and Methods of Forming Memory Cells
    53.
    发明申请
    Memory Cells, Integrated Devices, and Methods of Forming Memory Cells 有权
    记忆单元，集成器件和形成存储器单元的方法

    公开(公告)号：US20130126812A1

    公开(公告)日：2013-05-23

    申请号：US13298722

    申请日：2011-11-17

    申请人： Andrea Redaelli ,  Ugo Russo ,  Agostino Pirovano ,  Simone Lavizzari

    发明人： Andrea Redaelli ,  Ugo Russo ,  Agostino Pirovano ,  Simone Lavizzari

    IPC分类号： H01L45/00

    CPC分类号： H01L45/06 ,  G11C13/0004 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/128 ,  H01L45/1286 ,  H01L45/141 ,  H01L45/144 ,  H01L45/16 ,  H01L45/1608 ,  H01L45/165 ,  H01L45/1675

    摘要： Some embodiments include integrated devices, such as memory cells. The devices may include chalcogenide material, an electrically conductive material over the chalcogenide material, and a thermal sink between the electrically conductive material and the chalcogenide material. The thermal sink may be of a composition that includes an element in common with the electrically conductive material and includes an element in common with the chalcogenide material. Some embodiments include a method of forming a memory cell. Chalcogenide material may be formed over heater material. Electrically conductive material may be formed over the chalcogenide material. A thermal sink may be formed between the electrically conductive material and the chalcogenide material. The thermal sink may be of a composition that includes an element in common with the electrically conductive material and includes an element in common with the chalcogenide material.

    摘要翻译： 一些实施例包括集成设备，诸如存储器单元。 这些装置可以包括硫族化物材料，在硫族化物材料上的导电材料，以及在导电材料和硫族化物材料之间的散热器。 散热器可以是包括与导电材料相同的元件的组合物，并且包括与硫族化物材料相同的元件。 一些实施例包括形成存储器单元的方法。 可以在加热器材料上形成硫族化物材料。 可以在硫属化物材料上形成导电材料。 可以在导电材料和硫族化物材料之间形成散热器。 散热器可以是包括与导电材料相同的元件的组合物，并且包括与硫族化物材料相同的元件。

    Electronic device containing semiconductor polymers and corresponding manufacturing process
    58.
    发明授权
    Electronic device containing semiconductor polymers and corresponding manufacturing process 有权
    含有半导体聚合物的电子器件及相应的制造工艺

    公开(公告)号：US08039831B2

    公开(公告)日：2011-10-18

    申请号：US11700541

    申请日：2007-01-30

    申请人： Riccardo Sotgiu ,  Agostino Pirovano

    发明人： Riccardo Sotgiu ,  Agostino Pirovano

    IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

    CPC分类号： H01L51/5203 ,  Y10S428/917

    摘要： Described herein is an electronic device provided with an electrode and a region of polymeric material set in contact with the electrode. The electrode has a polysilicon region and a silicide region, which coats the polysilicon region and is arranged, as interface, between the polysilicon region and the region of polymeric material. The polysilicon region is doped with a doping level that is a function of a desired work function at the interface with the region of polymeric material. The electronic device is, for example, a testing device for characterizing the properties of the polymeric material.

    摘要翻译： 这里描述的是一种电子装置，其具有设置成与电极接触的电极和聚合材料区域。 电极具有多晶硅区域和硅化物区域，其涂覆多晶硅区域并且作为界面设置在多晶硅区域和聚合物材料区域之间。 掺杂多晶硅区域的掺杂水平是在与聚合物材料区域的界面处所需的功函数的函数。 电子装置例如是用于表征聚合物材料的性质的测试装置。

    PROCESS FOR MANUFACTURING PROBES INTENDED TO INTERACT WITH A STORAGE MEDIUM AND PROBE OBTAINED THEREBY
    59.
    发明申请
    PROCESS FOR MANUFACTURING PROBES INTENDED TO INTERACT WITH A STORAGE MEDIUM AND PROBE OBTAINED THEREBY 有权
    用于制造与存储介质接触的探针的过程及其获得的探针

    公开(公告)号：US20080145603A1

    公开(公告)日：2008-06-19

    申请号：US11958977

    申请日：2007-12-18

    申请人： Agostino Pirovano

    发明人： Agostino Pirovano

    IPC分类号： B29C33/40 ,  B32B7/00

    CPC分类号： G11B9/1409 ,  B82Y10/00 ,  G11B9/02 ,  Y10S977/902 ,  Y10S977/943 ,  Y10S977/947 ,  Y10T428/24174

    摘要： A process manufactures a probe intended to interact with a storage medium of a probe-storage system, wherein a sacrificial layer is deposited on top of a substrate; a hole is formed in the sacrificial layer; a mold layer is deposited; the mold layer is etched via the technique for forming spacers so as to form a mold region delimiting an opening having an area decreasing towards the substrate. Then a stack of conductive layers is deposited on top of the sacrificial layer, the stack is etched so as to form a suspended structure, formed by a pair of supporting arms arranged to form a V, and an interaction tip projecting monolithically from the supporting arms. Then a stiffening structure is formed, of insulating material, and the suspended structure is fixed to a supporting wafer. The substrate, the sacrificial layer, and, last, the mold region are then removed.

    摘要翻译： 一种工艺制造用于与探针存储系统的存储介质相互作用的探针，其中牺牲层沉积在衬底的顶部上; 在牺牲层中形成孔; 沉积模具层; 通过用于形成间隔物的技术蚀刻模具层，以便形成限定具有朝向衬底减小面积的开口的模具区域。 然后将一叠导电层沉积在牺牲层的顶部上，对叠层进行蚀刻，以形成悬置结构，该悬挂结构由布置成形成V的一对支撑臂形成，并且相互作用的尖端从支撑臂 。 然后形成由绝缘材料制成的加强结构，并且悬挂结构固定在支撑晶片上。 然后去除衬底，牺牲层，以及最后的模具区域。

    Process for manufacturing probes intended to interact with a storage medium and probe obtained thereby
    60.
    发明授权
    Process for manufacturing probes intended to interact with a storage medium and probe obtained thereby 有权
    用于制造用于与存储介质相互作用的探针和由此获得的探针的方法

    公开(公告)号：US07854016B2

    公开(公告)日：2010-12-14

    申请号：US11958977

    申请日：2007-12-18

    申请人： Agostino Pirovano

    发明人： Agostino Pirovano

    IPC分类号： G01Q20/04 ,  G01Q70/12 ,  G01Q70/14 ,  G01Q80/00

    CPC分类号： G11B9/1409 ,  B82Y10/00 ,  G11B9/02 ,  Y10S977/902 ,  Y10S977/943 ,  Y10S977/947 ,  Y10T428/24174

    摘要： A process manufactures a probe intended to interact with a storage medium of a probe-storage system, wherein a sacrificial layer is deposited on top of a substrate; a hole is formed in the sacrificial layer; a mold layer is deposited; the mold layer is etched via the technique for forming spacers so as to form a mold region delimiting an opening having an area decreasing towards the substrate. Then a stack of conductive layers is deposited on top of the sacrificial layer, the stack is etched so as to form a suspended structure, formed by a pair of supporting arms arranged to form a V, and an interaction tip projecting monolithically from the supporting arms. Then a stiffening structure is formed, of insulating material, and the suspended structure is fixed to a supporting wafer. The substrate, the sacrificial layer, and, last, the mold region are then removed.

    摘要翻译： 一种工艺制造用于与探针存储系统的存储介质相互作用的探针，其中牺牲层沉积在衬底的顶部上; 在牺牲层中形成孔; 沉积模具层; 通过用于形成间隔物的技术蚀刻模具层，以便形成限定具有朝向衬底减小面积的开口的模具区域。 然后将一叠导电层沉积在牺牲层的顶部上，对叠层进行蚀刻，以形成悬置结构，该悬挂结构由布置成形成V的一对支撑臂形成，并且相互作用的尖端从支撑臂 。 然后形成由绝缘材料制成的加强结构，并且悬挂结构固定在支撑晶片上。 然后去除衬底，牺牲层，以及最后的模具区域。