Abstract:
A sensing structure for use in testing integrated circuits on a substrate. The sensing structure includes at least two sensing regions connectable to a probe and at least one first sensing element. Each of the at least one first sensing elements is directly connected to two sensing regions such that for each sensing region a different value of an electrical parameter is measurable between the sensing region and a first reference potential so as to reliably determine a drift direction of a probe.
Abstract:
A method of testing integrated circuits is provided. The method includes establishing at least one first physical communication channel between a test equipment and a respective group of integrated circuits under test by having probes of the test equipment contacting at least one corresponding physical contact terminal of each integrated circuit of the respective group. The method further includes having the test equipment exchanging, over the at least one first physical communication channel, the same test stimuli with each integrated circuit of the group. The method still further includes having each integrated circuit of the group establishing a corresponding second physical communication channel with the test equipment by having at least one physical contact terminal of the integrated circuit contacted by a corresponding probe of the test equipment. The method further includes having each integrated circuit of the group exchanging, over the second physical communication channel, a corresponding test response signal based on the received test stimuli with the test equipment. The test stimuli are exchanged by modulating at least one first carrier wave based on the test stimuli; the at least one first carrier wave has at least one first frequency. The test response signals of each integrated circuit of the group are exchanged by modulating at least one respective second carrier wave based on the test response signals; each second carrier wave have at least one respective second frequency.
Abstract:
A test circuit is described of a circuit integrated on wafer of the type comprising at least one antenna of the embedded type comprising at least one test antenna associated with said at least one embedded antenna that realizes its connection of the wireless loopback type creating a wireless channel for said at least one embedded antenna and allows its electric test, transforming an electromagnetic signal of communication between said at least one embedded antenna and said at least one test antenna into an electric signal that can be read by a test apparatus.
Abstract:
A MEMS probe adapted to contact a corresponding terminal of an integrated circuit, integrated on at least one chip of a semiconductor material wafer during a test phase of the wafer is provided. The probe includes a support structure comprising a first access terminal and a second access terminal; the support structure defines a conductive path between said first access terminal and said second access terminal. The probes further-includes a probe region connected to the support structure adapted to contact the corresponding terminal of the integrated circuit during the test phase for providing at least one test signal received from the first access terminal and the second access terminal to the integrated circuit through at least one portion of the conductive path, and/or providing at least one test signal generated by the integrated circuit to at least one between the first access terminal and the second access terminal trough at least one portion of the conductive path. The probe region is arranged on the conductive path of the support structure between said first access terminal and said second access terminal.
Abstract:
An integrated circuit integrated on a semiconductor material die and adapted to be at least partly tested wirelessly, wherein circuitry for setting a selected radio communication frequencies to be used for the wireless test of the integrated circuit are integrated on the semiconductor material die.