Scalable Large System Based on Organic Interconnect

    公开(公告)号:US20250157936A1

    公开(公告)日:2025-05-15

    申请号:US19020976

    申请日:2025-01-14

    Applicant: Apple Inc.

    Abstract: Multi-chip modules and methods of fabrication are described. The MCM may include a plurality of dies in which die-to-die routing can be partitioned within multiple metal routing layers for shorter die-to-die routings, while longer die-to-die routing can be routed primarily in a single metal routing layer. The plurality of dies may also be arranged in a spaced apart relationship to accommodate additional wiring area, while preserving direct routing areas for the longer die-to-die routing.

    Decoupling device using stored charge reverse recovery

    公开(公告)号:US12176803B2

    公开(公告)日:2024-12-24

    申请号:US18471868

    申请日:2023-09-21

    Applicant: Apple Inc.

    Abstract: Increases in current drawn from power supply nodes in a computer system can result in unwanted drops in the voltages of the power supply nodes until power supply circuits can compensate for the increased load. To lessen the effects of increases in load currents, a decoupling circuit that includes a diode may be coupled to the power supply node. During a charge mode, a control circuit applies a current to the diode to store charge in the diode. During a boost mode, the control circuit can couple the diode to the power supply node. When the voltage level of the power supply node begins to drop, the diode can source a current to the power supply node using the previously stored charge. The diode may be directly coupled to the power supply node or be part of a switch-based system that employs multiple diodes to increase the discharge voltage.

    3D System and Wafer Reconstitution with Mid-layer Interposer

    公开(公告)号:US20240103238A1

    公开(公告)日:2024-03-28

    申请号:US18458892

    申请日:2023-08-30

    Applicant: Apple Inc.

    CPC classification number: G02B6/428 G02B6/4279 G02B6/4283 G02B6/4293

    Abstract: A system in package structure and method of fabrication using wafer reconstitution are described. In an embodiment a 3D system includes a mid-layer interposer a first package level underneath the mid-layer interposer and a second package level over the mid-layer interposer. Second package level components can be bonded to the mid-layer interposer with metal-metal bonds and optionally dielectric-dielectric bonds, while the first package level components can be bonded to the mid-layer interposer with dielectric-dielectric and optionally metal-metal bonds. Dies within the first and/or second package levels may optionally be connected with one or more optical interconnect paths.

    SYSTEMS AND METHODS FOR INTERCONNECTING DIES

    公开(公告)号:US20230052432A1

    公开(公告)日:2023-02-16

    申请号:US17931343

    申请日:2022-09-12

    Applicant: Apple Inc.

    Abstract: Stitched die structures, and methods for interconnecting die are described. In an embodiment, a stitched die structure includes a semiconductor substrate that includes a first die area of a first die and a second die area of a second die separate from the first die area. A back-end-of-the-line (BEOL) build-up structure spans over the first die area and the second die area, and includes a first metallic seal directly over a first peripheral area of the first die area, a second metallic seal directly over a second peripheral area of the second die area, and a die-to-die routing extending through the first metallic seal and the second metallic seal to electrically connect the first die to the second die.

    Structure and Method for Sealing a Silicon IC

    公开(公告)号:US20230040308A1

    公开(公告)日:2023-02-09

    申请号:US17397834

    申请日:2021-08-09

    Applicant: Apple Inc.

    Abstract: Chip sealing structures and methods of manufacture are described. In an embodiment, a chip structure includes a main body area formed of a substrate, a back-end-of-the-line (BEOL) build-up structure spanning over the substrate, and chip edge sidewalls extending from a back surface of the substrate to a top surface of the BEOL build-up structure and laterally surrounding the substrate and the BEOL build-up structure. In accordance with embodiments, the chip structure may further include a conformal sealing layer covering at least a first chip edge sidewall of the chip edge sidewalls and a portion of the top surface of the BEOL build-up structure, and forming a lip around the top surface of the BEOL build-up structure.

Patent Agency Ranking