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    SELECTIVE GRAPHENE DEPOSITION
    51.
    发明申请
    SELECTIVE GRAPHENE DEPOSITION 有权

    公开(公告)号：US20230090280A1

    公开(公告)日：2023-03-23

    申请号：US17483273

    申请日：2021-09-23

    Applicant: Applied Materials, Inc.

    Inventor： Supriya Ghosh ,  Susmit Singha Roy ,  Abhijit Basu Mallick

    IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311

    Abstract: Exemplary semiconductor processing methods may include providing a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The substrate may include a low dielectric constant material defining one or more features, a liner extending across the low dielectric constant material and within the one or more features, and a metal-containing layer deposited on the liner and extending within the one or more features. The methods may include forming a layer of material on at least a portion of the liner and the metal-containing layer. The layer of material may include graphene. The methods may include removing substantially all of the portion of the layer of material on the liner.

    THERMAL DEPOSITION OF SILICON-GERMANIUM
    53.
    发明申请
    THERMAL DEPOSITION OF SILICON-GERMANIUM 有权

    公开(公告)号：US20220375750A1

    公开(公告)日：2022-11-24

    申请号：US17324352

    申请日：2021-05-19

    Applicant: Applied Materials, Inc.

    Inventor： Huiyuan Wang ,  Susmit Singha Roy ,  Abhijit Basu Mallick

    IPC: H01L21/02

    Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate. Subsequent a first period of time, the methods may include providing a germanium-containing precursor to the processing region of the semiconductor processing chamber. The methods may include thermally reacting the silicon-containing precursor and the germanium-containing precursor at a temperature greater than or about 400° C. The methods may include forming a silicon-and-germanium-containing layer on the substrate.

    CONFORMAL SILICON-GERMANIUM FILM DEPOSITION
    54.
    发明申请
    CONFORMAL SILICON-GERMANIUM FILM DEPOSITION 有权

    公开(公告)号：US20220165566A1

    公开(公告)日：2022-05-26

    申请号：US16953569

    申请日：2020-11-20

    Applicant: Applied Materials, Inc.

    Inventor： Huiyuan Wang ,  Susmit Singha Roy ,  Abhijit Basu Mallick

    IPC: H01L21/02

    Abstract: Methods for depositing a silicon-germanium film on a substrate are described. The method comprises exposing a substrate to a silicon precursor and a germanium precursor to form a conformal silicon-germanium film. The substrate comprises at least one film stack and at least one feature, the film stack comprising alternating layers of silicon and silicon-germanium. The silicon-germanium film has a conformality greater than 50%.

    DIFFUSION BARRIERS FOR GERMANIUM
    55.
    发明申请
    DIFFUSION BARRIERS FOR GERMANIUM 有权

    公开(公告)号：US20220068640A1

    公开(公告)日：2022-03-03

    申请号：US17004262

    申请日：2020-08-27

    Applicant: Applied Materials, Inc.

    Inventor： Huiyuan Wang ,  Susmit Singha Roy ,  Takehito Koshizawa ,  Bo Qi ,  Abhijit Basu Mallick ,  Nitin K. Ingle

    IPC: H01L21/02 ,  H01L29/16

    Abstract: Examples of the present technology include semiconductor processing methods to form diffusion barriers for germanium in a semiconductor structure. The methods may include forming a semiconductor layer stack from pairs of Si-and-SiGe layers. The Si-and-SiGe layer pairs may be formed by forming a silicon layer, and then forming the germanium barrier layer of the silicon layer. In some embodiments, the germanium-barrier layer may be less than or about 20 Å. A silicon-germanium layer may be formed on the germanium-barrier layer to complete the formation of the Si-and-SiGe layer pair. In some embodiments, the silicon layer may be an amorphous silicon layer, and the SiGe layer may be characterized by greater than or about 5 atom % germanium. Examples of the present technology also include semiconductor structures that include a silicon-germanium layer, a germanium-barrier layer, and a silicon layer.

    Linerless continuous amorphous metal films
    59.
    发明授权
    Linerless continuous amorphous metal films 有权

    公开(公告)号：US10930493B2

    公开(公告)日：2021-02-23

    申请号：US16596647

    申请日：2019-10-08

    Applicant: Applied Materials, Inc.

    Inventor： Susmit Singha Roy ,  Yong Wu ,  Srinivas Gandikota

    IPC: H01L21/02 ,  H01L21/324

    Abstract: Embodiments described herein generally relate to methods of depositing thin films and, more particularly, to depositing metal thin films. The methods herein provide a nucleation free conversion (NFC) approach which involves forming an amorphous silicon layer over the dielectric layer, and performing an NFC process which acts to convert the amorphous silicon layer into a thin metal film. In some embodiments, the NFC process is performed multiple times until the resulting thin metal film is continuous. A bulk metal is formed over the thin metal film.

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