公开(公告)号：US20090000547A1

公开(公告)日：2009-01-01

申请号：US12222679

申请日：2008-08-14

申请人： Katsuyuki Sekine ,  Seiji Inumiya ,  Motoyuki Sato ,  Akio Kaneko ,  Kazuhiro Eguchi

发明人： Katsuyuki Sekine ,  Seiji Inumiya ,  Motoyuki Sato ,  Akio Kaneko ,  Kazuhiro Eguchi

IPC分类号： B05C11/00 ,  C23C16/00

CPC分类号： H01L21/67253 ,  H01J37/32935 ,  H01L21/67069 ,  H01L22/14

摘要： According to the present invention, there is provided a semiconductor device fabrication method comprising:measuring light emission intensity of at least one type of wavelength contained in light emitted from a plasma, when one of nitriding, oxidation, and impurity doping is to be performed on a surface of a semiconductor substrate in a processing vessel by using the plasma;calculating, for each semiconductor substrate, an exposure time during which the semiconductor substrate is exposed to the plasma, on the basis of the measured light emission intensity; andexposing each semiconductor substrate to the plasma on the basis of the calculated exposure time, thereby performing one of the nitriding, oxidation, and impurity doping.

摘要翻译： 根据本发明，提供了一种半导体器件的制造方法，其特征在于，当对等离子体发射的光中包含的至少一种类型的波长的发光强度进行测量时，当氮化，氧化和杂质掺杂之一将对 通过使用等离子体在处理容器中的半导体衬底的表面; 基于所测量的发光强度，针对每个半导体衬底计算半导体衬底暴露于等离子体的曝光时间; 并根据计算出的曝光时间将各半导体衬底暴露于等离子体，从而进行氮化，氧化和杂质掺杂之一。

公开(公告)号：US20080265324A1

公开(公告)日：2008-10-30

申请号：US12081824

申请日：2008-04-22

申请人： Akio Kaneko ,  Seiji Inumiya ,  Katsuyuki Sekine ,  Kazuhiro Eguchi ,  Motoyuki Sato

发明人： Akio Kaneko ,  Seiji Inumiya ,  Katsuyuki Sekine ,  Kazuhiro Eguchi ,  Motoyuki Sato

IPC分类号： H01L29/786

CPC分类号： H01L21/28194 ,  H01L21/28079 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/495 ,  H01L29/513 ,  H01L29/517 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device according to the present invention comprises a semiconductor substrate, a gate insulating film which is composed of a material whose main component is a tetravalent metal oxide, a mixture of a tetravalent metal oxide and SiO2, or a mixture of a tetravalent metal oxide and SiON and which containing B when it is in an nMOS structure on the semiconductor substrate or containing at least one of P and As when it is in a pMOS structure on the semiconductor substrate, and a gate electrode made of a metal having a work function of 4 eV to 5.5 eV.

公开(公告)号：US07427518B2

公开(公告)日：2008-09-23

申请号：US11260253

申请日：2005-10-28

申请人： Katsuyuki Sekine ,  Seiji Inumiya ,  Motoyuki Sato ,  Akio Kaneko ,  Kazuhiro Eguchi

发明人： Katsuyuki Sekine ,  Seiji Inumiya ,  Motoyuki Sato ,  Akio Kaneko ,  Kazuhiro Eguchi

IPC分类号： H01L21/00

CPC分类号： H01L21/67253 ,  H01J37/32935 ,  H01L21/67069 ,  H01L22/14

摘要： According to the present invention, there is provided a semiconductor device fabrication method comprising: measuring light emission intensity of at least one type of wavelength contained in light emitted from a plasma, when one of nitriding, oxidation, and impurity doping is to be performed on a surface of a semiconductor substrate in a processing vessel by using the plasma; calculating, for each semiconductor substrate, an exposure time during which the semiconductor substrate is exposed to the plasma, on the basis of the measured light emission intensity; and exposing each semiconductor substrate to the plasma on the basis of the calculated exposure time, thereby performing one of the nitriding, oxidation, and impurity doping.

摘要翻译： 根据本发明，提供了一种半导体器件的制造方法，其特征在于，当对等离子体发射的光中包含的至少一种类型的波长的发光强度进行测量时，当氮化，氧化和杂质掺杂之一将对 通过使用等离子体在处理容器中的半导体衬底的表面; 基于所测量的发光强度，针对每个半导体衬底计算半导体衬底暴露于等离子体的曝光时间; 并根据计算出的曝光时间将各半导体衬底暴露于等离子体，从而进行氮化，氧化和杂质掺杂之一。

公开(公告)号：US20080146013A1

公开(公告)日：2008-06-19

申请号：US12010937

申请日：2008-01-31

申请人： Tsunehiro Ino ,  Akio Kaneko ,  Nobutoshi Aoki

发明人： Tsunehiro Ino ,  Akio Kaneko ,  Nobutoshi Aoki

IPC分类号： H01L21/28

CPC分类号： H01L21/28202 ,  H01L21/268 ,  H01L21/2686 ,  H01L21/28035 ,  H01L21/2807 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/28194 ,  H01L29/511 ,  H01L29/517

摘要： A method for manufacturing a semiconductor device is provided, which includes forming a gate insulating film on a semiconductor substrate, forming a first layer on the gate insulating film, the first layer containing a first p-type impurity and, an amorphous or polycrystalline formed of Si1-xGex (0≦x

摘要翻译： 提供一种制造半导体器件的方法，其包括在半导体衬底上形成栅极绝缘膜，在栅极绝缘膜上形成第一层，第一层包含第一p型杂质，以及由 （0 <= x <0.25），对第一层进行第一热处理，其中第一层在第一层被加热1毫秒以下 温度高于1100℃，在第一层上形成第二层，第二层含有第二p型杂质，由非晶硅或多晶硅形成，第二p型杂质的共价键半径小于 第一p型杂质的第二层，并在第二层进行第二次热处理以在800℃至1100℃的温度下加热第二层。

公开(公告)号：US20070197048A1

公开(公告)日：2007-08-23

申请号：US11785606

申请日：2007-04-19

申请人： Katsuyuki Sekine ,  Akio Kaneko ,  Motoyuki Sato ,  Seiji Inumiya ,  Kazuhiro Eguchi

发明人： Katsuyuki Sekine ,  Akio Kaneko ,  Motoyuki Sato ,  Seiji Inumiya ,  Kazuhiro Eguchi

IPC分类号： H01L21/31

CPC分类号： C23C16/401 ,  C23C16/56 ,  H01L21/02329 ,  H01L21/3145

摘要： According to the present invention, there is provided a semiconductor device comprising: a gate insulating film selectively formed on a predetermined region of a semiconductor substrate; a gate electrode formed on said gate insulating film; and a source region and drain region formed, in a surface portion of said semiconductor substrate, on two sides of a channel region positioned below said gate electrode, wherein a carbon concentration in an interface where said gate insulating film is in contact with said gate electrode is not more than 5×1022 atoms/cm3.

摘要翻译： 根据本发明，提供了一种半导体器件，包括：选择性地形成在半导体衬底的预定区域上的栅极绝缘膜; 形成在所述栅极绝缘膜上的栅电极; 以及在所述半导体衬底的表面部分中形成在位于所述栅极电极下方的沟道区域的两侧上的源极区和漏极区，其中所述栅极绝缘膜与所述栅电极接触的界面中的碳浓度 不大于5×10 22个原子/ cm 3。

公开(公告)号：US20070020901A1

公开(公告)日：2007-01-25

申请号：US11487994

申请日：2006-07-18

申请人： Tsunehiro Ino ,  Akio Kaneko ,  Nobutoshi Aoki

发明人： Tsunehiro Ino ,  Akio Kaneko ,  Nobutoshi Aoki

IPC分类号： H01L21/3205 ,  H01L21/44 ,  H01L21/4763

CPC分类号： H01L21/28202 ,  H01L21/268 ,  H01L21/2686 ,  H01L21/28035 ,  H01L21/2807 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/28194 ,  H01L29/511 ,  H01L29/517

摘要： A method for manufacturing a semiconductor device is provided, which includes forming a gate insulating film on a semiconductor substrate, forming a first layer on the gate insulating film, the first layer containing a first p-type impurity and, an amorphous or polycrystalline formed of Si1-xGex (0≦x

摘要翻译： 提供一种制造半导体器件的方法，其包括在半导体衬底上形成栅极绝缘膜，在栅极绝缘膜上形成第一层，第一层包含第一p型杂质，以及由 （0 <= x <0.25），对第一层进行第一热处理，其中第一层在第一层被加热1毫秒以下 温度高于1100℃，在第一层上形成第二层，第二层含有第二p型杂质，由非晶硅或多晶硅形成，第二p型杂质的共价键半径小于 第一p型杂质的第二层，并在第二层进行第二次热处理以在800℃至1100℃的温度下加热第二层。

公开(公告)号：US20050158932A1

公开(公告)日：2005-07-21

申请号：US10995296

申请日：2004-11-24

申请人： Seiji Inumiya ,  Akio Kaneko ,  Motoyuki Sato ,  Katsuyuki Sekine ,  Kazuhiro Eguchi ,  Yoshitaka Tsunashima

发明人： Seiji Inumiya ,  Akio Kaneko ,  Motoyuki Sato ,  Katsuyuki Sekine ,  Kazuhiro Eguchi ,  Yoshitaka Tsunashima

IPC分类号： H01L29/423 ,  H01L21/316 ,  H01L21/336 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L21/31 ,  H01L21/8234

CPC分类号： H01L29/6656 ,  H01L21/28202 ,  H01L21/823828 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/518

摘要： A method of manufacturing a semiconductor device, comprises: providing a gate insulation layer of a high dielectric constant containing a metal element on a surface of a semiconductor substrate, part of which becoming a channel; providing a first conductive layer containing a silicon element on the surface of said gate insulation layer, said first conductive layer being a gate electrode; and introducing nitrogen or oxygen onto an interface between said gate insulation layer and said first conductive layer by executing a thermal treatment upon said semiconductor substrate in a atmosphere containing a nitriding agent or an oxidizing agent.

摘要翻译： 一种制造半导体器件的方法，包括：在半导体衬底的表面上提供包含金属元素的高介电常数的栅极绝缘层，其中一部分变成沟道; 在所述栅极绝缘层的表面上提供含有硅元素的第一导电层，所述第一导电层是栅电极; 以及通过在包含氮化剂或氧化剂的气氛中对所述半导体衬底进行热处理，将氮或氧引入到所述栅极绝缘层和所述第一导电层之间的界面上。

公开(公告)号：US4464781A

公开(公告)日：1984-08-07

申请号：US281712

申请日：1981-07-09

申请人： Akio Kaneko ,  Hitoshi Kajiwara

发明人： Akio Kaneko ,  Hitoshi Kajiwara

IPC分类号： H03G1/00 ,  H03G5/02 ,  H04S1/00 ,  H04S7/00 ,  H03H5/00

CPC分类号： H04S1/007 ,  H03G5/025 ,  H04S7/40 ,  H04R2499/13

摘要： An equalizer apparatus for audio equipment capable of selecting between a 2-speaker system and a 4-speaker system, including a display device indicating proper operation of the control knobs of the equalizer. The display device includes a first illuminable element of a first color for indicating operation of one channel of stereophonic sound reproduction, a second illuminable element of a second color for indicating operation of the other channel of stereophonically reproduced sound, and color coded means corresponding to said first and second colors for indicating which of the control knobs produce data signals for the first channel and which of the control knobs produce data signals for the second channel. Further, the color coded means may indicate which of the control knobs produce data signals for each of the divided frequencies of the respective channels during operation of the audio equipment in the manner simulating quadriphonic sound.

摘要翻译： 一种能够在2扬声器系统和4扬声器系统之间进行选择的音频设备的均衡器装置，包括指示均衡器的控制旋钮的适当操作的显示装置。 显示装置包括：第一颜色的第一可照明元件，用于指示一个立体声再现声道的操作;第二颜色的第二可照明元件，用于指示立体声再生声音的另一声道的操作;以及对应于所述 第一和第二颜色，用于指示哪个控制旋钮产生用于第一通道的数据信号，以及哪个控制旋钮产生用于第二通道的数据信号。 此外，颜色编码装置可以指示在以模拟四弦声音的方式在音频设备的操作期间，哪个控制旋钮产生用于各个频道的每个分频的数据信号。