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    Method for producing silane
    52.
    发明授权
    Method for producing silane 失效
    硅烷的制造方法

    公开(公告)号：US06852301B2

    公开(公告)日：2005-02-08

    申请号：US10450207

    申请日：2001-11-21

    申请人： Hans-Dieter Block ,  Leslaw Mleczko ,  Andreas Bulan ,  Rainer Weber ,  Sigurd Buchholz ,  Torsten Sill

    发明人： Hans-Dieter Block ,  Leslaw Mleczko ,  Andreas Bulan ,  Rainer Weber ,  Sigurd Buchholz ,  Torsten Sill

    IPC分类号： C01B33/04 ,  C01B33/18

    CPC分类号： C01B33/046 ,  C01B33/043 ,  C01B33/18

    摘要： The invention relates to a method for producing silane (SiH4) by a) reacting metallurgical silicon with silicon tetrachloride (SiCl4) and hydrogen (H2), to form a crude gas stream containing trichlorosilane (SiHCl3) and silicon tetrachloride (SiCl4), b) removing impurities from the resulting crude gas stream by washing with condensed chlorosilanes, c) condensing and subsequently, separating the purified crude gas stream by distillation, d) returning the partial stream consisting essentially of SiCl4 to the reaction of metallurgical silicon with SiCl4 and H2, e) disproportionating the partial stream containing SiHCl3, to form SiCl4 and SiH4 and f) returning the SiH4 formed by disproportionation to the reaction of metallurgical silicon with SiCl4 and H2, the crude gas stream containing trichlorosilane and silicon tetrachloride being liberated from solids as far as possible by gas filtration before being washed with the condensed chlorosilanes. The washing process with the condensed chlorosilanes is carried out at a pressure of 25 to 40 bar and at a temperature of at least 150° C. in a single-stage distillation column and is carried out in such a way that 0.1 to 3 wt. % of the crude gas stream containing trichlorosilane and silicon tetrachloride is recovered in the form of a condensed liquid phase consisting essentially of SiCl4, this liquid phase then being removed from the SiCl4 circuit and expanded to a pressure of 1 bar outside said SiCl4 circuit and cooled to a temperature of 10 to 40° C., whereby dissolved impurities separate out and are then removed by filtration.

    摘要翻译： 本发明涉及一种通过以下步骤制备硅烷（SiH 4）的方法：a）使冶金硅与四氯化硅（SiCl 4）和氢（H 2）反应，形成含有三氯硅烷（SiHCl 3）和四氯化硅（SiCl 4）的粗气流，b） 通过用冷凝的氯硅烷洗涤从所得粗气流中除去杂质，c）冷凝并随后通过蒸馏分离纯化的粗气流，d）将基本上由SiCl 4组成的部分流返回到冶金硅与SiCl 4和H 2的反应中， e）歧化含SiHCl3的部分流，以形成SiCl4和SiH4，以及f）将通过歧化形成的SiH 4返回至冶金硅与SiCl4和H2的反应，将含有三氯硅烷和四氯化硅的粗气流从固体释放至 在用冷凝的氯硅烷洗涤之前可能通过气体过滤。 冷凝氯硅烷的洗涤过程在单级蒸馏塔中在25至40巴的压力和至少150℃的温度下进行，并以0.1至3重量％ 含有三氯硅烷和四氯化硅的粗气流的％以基本上由SiCl 4组成的冷凝液相的形式回收，然后将该液相从SiCl4回路除去并在SiCl 4回路外扩张至1巴的压力，并冷却 温度为10〜40℃，由此分离出溶解的杂质，然后通过过滤除去。

    PREPARATION OF CNTS
    54.
    发明申请
    PREPARATION OF CNTS 审中-公开
    CNTS的准备

    公开(公告)号：US20130011328A1

    公开(公告)日：2013-01-10

    申请号：US13574321

    申请日：2011-01-20

    申请人： Ralph Weber ,  Volker Michele ,  Leslaw Mleczko

    发明人： Ralph Weber ,  Volker Michele ,  Leslaw Mleczko

    IPC分类号： D01F9/12 ,  B82Y40/00

    CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/168

    摘要： The present invention relates to a process comprising the steps a) synthesis of carbon nanotubes, b) optional inerting and c) cooling of the product. The process permits problem-free handling and packing of the carbon nanotube material that is produced.

    摘要翻译： 本发明涉及包括以下步骤的方法：a）碳纳米管的合成，b）任选的惰性化和c）产物的冷却。 该方法允许无问题地处理和包装所生产的碳纳米管材料。

    Method for producing highly pure, granular silicon in a fluidised bed
    58.
    发明授权
    Method for producing highly pure, granular silicon in a fluidised bed 失效
    在流化床中生产高纯度颗粒状硅的方法

    公开(公告)号：US07553466B2

    公开(公告)日：2009-06-30

    申请号：US10478608

    申请日：2002-04-10

    申请人： Heiko Herold ,  H. Günter Holdenried ,  Leslaw Mleczko ,  Matthias Pfaffelhuber ,  Karl-Theodor König

    发明人： Heiko Herold ,  H. Günter Holdenried ,  Leslaw Mleczko ,  Matthias Pfaffelhuber ,  Karl-Theodor König

    IPC分类号： C01B33/02

    CPC分类号： B01J8/388 ,  B01J8/003 ,  B01J8/0055 ,  B01J2208/00168 ,  B01J2208/00761 ,  C01B33/027

    摘要： The present invention relates to a method for producing highly pure, granular silicon with a narrow particle-size distribution by decomposing silanes or halosilanes in a fluidised bed and epitaxially growing silicon on silicon seed particles, which method is characterised in that the gas containing silicon is supplied to the reaction chamber in an upward flow and the contents of the fluidised bed are separated in a continuous or discontinuous manner, whereby a particle stream from the fluidised bed is supplied to a separator mounted outside the fluidised bed, particles of the desired size are separated and undersized particles are returned to the fluidised bed. The invention also relates to a device and the use thereof for carrying out said method.

    摘要翻译： 本发明涉及通过在流化床中分解硅烷或卤代硅烷并在硅种子颗粒上外延生长硅来生产具有窄粒度分布的高纯度粒状硅的方法，该方法的特征在于含硅气体为 以向上的流动供应到反应室，并且流化床的内容物以连续或不连续的方式分离，由此来自流化床的颗粒物流被供应到安装在流化床外部的分离器，所需尺寸的颗粒是 分离和尺寸过小的颗粒返回到流化床。 本发明还涉及一种用于执行所述方法的装置及其用途。

    Device for electrically heating a vertically erect chamber
    60.
    发明授权
    Device for electrically heating a vertically erect chamber 失效
    用于电加热垂直竖立室的装置

    公开(公告)号：US07078656B2

    公开(公告)日：2006-07-18

    申请号：US10481762

    申请日：2002-04-09

    申请人： Heiko Herold ,  Günter Holdenried ,  Leslaw Mleczko ,  Matthias Pfaffelhuber ,  Theo König

    发明人： Heiko Herold ,  Günter Holdenried ,  Leslaw Mleczko ,  Matthias Pfaffelhuber ,  Theo König

    IPC分类号： H05B3/00

    CPC分类号： F24H9/1863 ,  F24H3/081

    摘要： A device for electrically heating a vertically erect chamber comprising several heating zones arranged vertically one above the other. The components of the device, with the exception of the insulating components, are made from graphite materials. Each zone (Z) comprises a number of supports (1), arranged in an essentially even distribution around the chamber for heating, which simultaneously serve as electrical supplies for the heater, and the heater for each zone (Z) is fixed at one end and longitudinally displaceable at the other end.

    摘要翻译： 一种用于对垂直竖立的室进行电加热的装置，包括垂直地布置在另一个上的多个加热区。 除了绝缘部件之外，器件的部件由石墨材料制成。 每个区域（Z）包括多个支撑件（1），其布置成围绕加热室的基本均匀的分布，其同时用作加热器的电源，并且每个区域（Z）的加热器固定在一端 并在另一端纵向移位。