公开(公告)号：US09842735B2

公开(公告)日：2017-12-12

申请号：US14908678

申请日：2015-07-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yanan Niu ,  Chao Liu ,  Zengsheng He ,  Lei Chen ,  Yujun Zhang

IPC: H01L21/00 ,  H01L21/84 ,  H01L21/02 ,  H01L29/78 ,  H01L29/786 ,  H01L21/308 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L21/02675 ,  H01L21/02057 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02686 ,  H01L21/3085 ,  H01L21/3086 ,  H01L27/1222 ,  H01L27/1274 ,  H01L27/1285 ,  H01L27/1288 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78675

Abstract: A method of manufacturing a low temperature polycrystalline silicon thin film and a thin film transistor, a thin film transistor, a display panel and a display device are provided. The method includes: forming an amorphous silicon thin film (01) on a substrate (1); forming a pattern of a silicon oxide thin film (02) covering the amorphous silicon thin film (01), a thickness of the silicon oxide thin film (02) located at a preset region being larger than that of the silicon oxide thin film (02) located at other regions; and irradiating the silicon oxide thin film (02) by using excimer laser to allow the amorphous silicon thin film (01) forming an initial polycrystalline silicon thin film (04), the initial polycrystalline silicon thin film (04) located at the preset region being a target low temperature polycrystalline silicon thin film (05). The polycrystalline silicon thin film has more uniform crystal size.

公开(公告)号：US09768312B2

公开(公告)日：2017-09-19

申请号：US14913048

申请日：2015-07-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hongwei Tian ,  Yanan Niu ,  Zuqiang Wang ,  Liang Sun

IPC: H01L29/786 ,  H01L21/77 ,  H01L21/02 ,  H01L21/225 ,  H01L21/30 ,  H01L21/306 ,  H01L27/12 ,  H01L29/10 ,  H01L29/66

CPC classification number: H01L29/78675 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02675 ,  H01L21/2251 ,  H01L21/3003 ,  H01L21/30604 ,  H01L21/77 ,  H01L27/1222 ,  H01L27/127 ,  H01L27/1285 ,  H01L29/1033 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78696

Abstract: Embodiments of the present invention disclose a manufacturing method of a thin film transistor, a thin film transistor, an array substrate and a display device. The manufacturing method of a thin film transistor includes a step of forming an active layer, and the step of forming an active layer includes: forming a first poly-silicon layer and a second poly-silicon layer on the first poly-silicon layer separately, and adding dopant ions into the second poly-silicon layer and an upper surface layer of the first poly-silicon layer. By using the manufacturing method of a thin film transistor, defect states and unstable factors of interface in the thin film transistor can be reduced, thereby improving stability of the LTPS thin film transistor and obtaining an array substrate and a display device having more stable performance.