公开(公告)号：US20190131410A1

公开(公告)日：2019-05-02

申请号：US15940043

申请日：2018-03-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Guangyao Li ,  Guangcai Yuan ,  Dongfang Wang ,  Jun Wang ,  Qinghe Wang ,  Ning Liu

IPC: H01L29/24 ,  H01L29/45 ,  H01L29/49 ,  H01L29/786 ,  H01L29/84 ,  H01L31/0392 ,  H01L31/032 ,  H01L31/113 ,  H01L29/66 ,  H01L21/02 ,  H01L21/445

CPC classification number: H01L29/24 ,  H01L21/02568 ,  H01L21/445 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/283 ,  H01L29/1606 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78642 ,  H01L29/78696 ,  H01L29/84 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/03926 ,  H01L31/1136 ,  H01L51/05

Abstract: Provided is a thin film transistor, a production method thereof, and an electronic apparatus. The thin film transistor comprises a substrate, and a gate electrode, a gate insulator layer, a source electrode, a drain electrode and an active layer on the substrate, wherein the active layer comprises a stack of two or more layers of graphene-like two-dimensional semiconductor material. The electronic apparatus comprises the thin film transistor, and may be used as an optical or mechanical sensor.