公开(公告)号：US10060033B2

公开(公告)日：2018-08-28

申请号：US14915330

申请日：2014-08-04

申请人： MERCK PATENT GMBH

发明人： Klaus Bonrad ,  Joerg Schneider ,  Rudolf Hoffman ,  Mareiki Kaloumenos

IPC分类号： C07F9/66 ,  C23C18/12 ,  C07F3/00 ,  C07F5/00 ,  C07F7/00 ,  C07F7/22 ,  C07F3/06 ,  H01G4/10 ,  H01G4/33 ,  H01L21/02 ,  H01L21/445 ,  H01L29/45 ,  H01L29/66 ,  H01L29/786

CPC分类号： C23C18/1216 ,  C07F3/003 ,  C07F3/06 ,  C07F5/003 ,  C07F7/003 ,  C07F7/2204 ,  C07F7/2224 ,  C23C18/1291 ,  H01G4/10 ,  H01G4/33 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02628 ,  H01L21/02664 ,  H01L21/445 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

摘要： The present invention relates to novel precursors in the form of metal complexes with 2-substituted 1,3-diketones and to a process for the preparation thereof. The invention furthermore relates to the use thereof for the production of thin metal-oxide layers. The latter are constituents in a very wide variety of electronic components and devices having various functions.

公开(公告)号：US09490169B2

公开(公告)日：2016-11-08

申请号：US12917828

申请日：2010-11-02

申请人： Zoltan Ring ,  Scott Thomas Sheppard ,  Helmut Hagleitner

发明人： Zoltan Ring ,  Scott Thomas Sheppard ,  Helmut Hagleitner

IPC分类号： H01L29/12 ,  H01L21/768 ,  H01L29/417 ,  H01L29/778 ,  H01L29/812 ,  H01L21/445 ,  H01L29/16 ,  H01L29/20 ,  H01L29/45

CPC分类号： H01L29/452 ,  H01L21/30604 ,  H01L21/3081 ,  H01L21/445 ,  H01L21/76898 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/7787 ,  H01L29/812

摘要： A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding that can otherwise cause undesired inductance. The method includes fabricating a semiconductor device including a Group III-V semiconductor layer on a surface on a silicon carbide substrate, wherein the semiconductor device defines at least one via through the silicon carbide substrate and the epitaxial layer.

摘要翻译： 公开了一种在碳化硅衬底上制造集成电路的方法，其消除了否则会导致不期望的电感的引线接合。 该方法包括在碳化硅衬底的表面上制造包括III-V族半导体层的半导体器件，其中半导体器件限定通过碳化硅衬底和外延层的至少一个通孔。

公开(公告)号：US09312146B2

公开(公告)日：2016-04-12

申请号：US14354320

申请日：2013-10-29

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Xiangyong Kong ,  Jun Cheng ,  Dongfang Wang ,  Guangcai Yuan

IPC分类号： H01L21/8234 ,  H01L21/445 ,  H01L29/417 ,  H01L29/786 ,  H01L29/66 ,  H01L29/423 ,  H01L27/12

CPC分类号： H01L21/445 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/41758 ,  H01L29/41775 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78621 ,  H01L29/7869 ,  H01L2029/42388

摘要： Embodiments of the invention provide a thin film transistor and a manufacturing method thereof and a display device. The thin film transistor includes a gate electrode, a gate insulation layer, an active layer, an ohmic contact layer, a source electrode and a drain electrode, and the source electrode and the drain electrode are connected to the active layer by the ohmic contact layer. The ohmic contact layer is provided at a lateral side of the active layer and contacts the lateral side of the active layer.

摘要翻译： 本发明的实施例提供一种薄膜晶体管及其制造方法和显示装置。 薄膜晶体管包括栅电极，栅极绝缘层，有源层，欧姆接触层，源电极和漏电极，源电极和漏电极通过欧姆接触层连接到有源层 。 欧姆接触层设置在有源层的侧面并接触有源层的侧面。

公开(公告)号：US20150140711A1

公开(公告)日：2015-05-21

申请号：US14399323

申请日：2013-05-08

申请人： KONINKLIJKE PHILIPS N.V.

发明人： Jipu Lei ,  Alexander H. Nickel ,  Stefano Schiaffino ,  Grigoriy Basin

IPC分类号： H01L27/12

CPC分类号： H01L27/1266 ,  H01L21/02697 ,  H01L21/0273 ,  H01L21/441 ,  H01L21/445 ,  H01L21/7806 ,  H01L27/1262 ,  H01L27/1288 ,  H01L33/0062 ,  H01L33/0079 ,  H01L33/0083 ,  H01L33/0095 ,  H01L33/38 ,  H01L33/385 ,  H01L2933/0016

摘要： A method according to embodiments of the invention includes providing a wafer comprising a semiconductor structure grown on a growth substrate. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. The wafer includes trenches defining individual semiconductor devices. The trenches extend through an entire thickness of the semiconductor structure to reveal the growth substrate. The method further includes forming a thick conductive layer on the semiconductor structure. The thick conductive layer is configured to support the semiconductor structure when the growth substrate is removed. The method further includes removing the growth substrate.

摘要翻译： 根据本发明的实施例的方法包括提供包括在生长衬底上生长的半导体结构的晶片。 半导体结构包括设置在n型区域和p型区域之间的发光层。 晶片包括限定各个半导体器件的沟槽。 沟槽延伸穿过半导体结构的整个厚度以露出生长衬底。 该方法还包括在半导体结构上形成厚的导电层。 当导电层被去除时，厚的导电层构造成支撑半导体结构。 该方法还包括去除生长衬底。

公开(公告)号：US20150028334A1

公开(公告)日：2015-01-29

申请号：US14382604

申请日：2013-03-14

申请人： RICOH COMPANY, LTD.

发明人： Shinji Matsumoto ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Mikiko Takada ,  Yuji Sone ,  Ryoichi Saotome

IPC分类号： H01L29/786 ,  H01L29/45

CPC分类号： H01L29/7869 ,  H01L21/445 ,  H01L23/5328 ,  H01L27/1292 ,  H01L29/45 ,  H01L29/458 ,  H01L2924/0002 ,  H01L2924/00

摘要： To provide an electroconductive thin film, containing: a metal oxide containing indium and tin; and gold.

摘要翻译： 提供导电薄膜，其包含：含有铟和锡的金属氧化物; 和黄金。

公开(公告)号：US5512511A

公开(公告)日：1996-04-30

申请号：US248135

申请日：1994-05-24

申请人： Murray H. Kalisher

发明人： Murray H. Kalisher

IPC分类号： H01L21/368 ,  H01L21/445 ,  H01L31/18 ,  H01L21/20

CPC分类号： H01L31/1832 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02551 ,  H01L21/02562 ,  H01L21/02625 ,  H01L21/445

摘要： A method for fabricating a two layer epitaxial structure by a liquid phase epitaxy (LPE) process, the structure being comprised of a Group II-VI semiconductor material. The method includes the steps of providing an LPE growth chamber that contains a molten Group II-VI semiconductor material 24, the molten Group II-VI semiconductor material having a first temperature (T.sub.1); growing, at the first temperature, a base layer (22) from the molten Group II-VI semiconductor material, the base layer being grown to have a first bandgap energy; employing a shutter mechanism (30) to isolate the base layer from the molten Group II-VI semiconductor material without removing the base layer from the growth chamber; reducing the first temperature of the molten Group II-VI semiconductor material to a second temperature (T.sub.2); and growing from the same molten Group II-VI semiconductor material a contact layer (32) upon a surface (22a) of the base layer, the contact layer being grown to have a second bandgap energy that is narrower than the first bandgap energy. The base layer is not removed from the growth chamber until after the growth of the contact layer, and is thus not required to be exposed to the atmosphere or to any other sources of contaminates.

摘要翻译： 一种通过液相外延（LPE）工艺制造双层外延结构的方法，该结构由II-VI族半导体材料组成。 该方法包括以下步骤：提供含有熔融的II-VI族半导体材料24，具有第一温度（T1）的熔融II-VI族半导体材料的LPE生长室; 在第一温度下，从熔融的II-VI族半导体材料生长基底层（22），生长基底层以具有第一带隙能量; 使用快门机构（30）将基底层与熔融的II-VI族半导体材料隔离，而不从生长室移除基底层; 将熔融的II-VI族半导体材料的第一温度降低到第二温度（T2）; 并且从相同的熔融的II-VI族半导体材料生长在所述基底层的表面（22a）上的接触层（32），所述接触层被生长以具有比所述第一带隙能量窄的第二带隙能量。 直到接触层生长之后基底层才从生长室中除去，因此不需要暴露于大气或任何其它污染源。

公开(公告)号：US5399524A

公开(公告)日：1995-03-21

申请号：US133545

申请日：1993-10-07

申请人： Nikhil R. Taskar ,  Babar A. Khan ,  Donald R. Dorman

发明人： Nikhil R. Taskar ,  Babar A. Khan ,  Donald R. Dorman

IPC分类号： H01L21/28 ,  H01L21/445 ,  H01L33/00 ,  H01L33/28 ,  H01L33/40 ,  H01L21/44 ,  H01L21/48

CPC分类号： H01L33/40 ,  H01L21/445 ,  H01L33/28

摘要： A method of providing an improved ohmic contact on an p-type ZnSe or ZnSSe layer provided on a substrate comprising immersing the layer in a Hg bath heated to a temperature in excess of 200.degree. C. for more than two hours.

摘要翻译： 在衬底上提供的p型ZnSe或ZnSSe层上提供改进的欧姆接触的方法，包括将该层浸入加热到超过200℃的Hg浴中超过2小时。

公开(公告)号：US4085500A

公开(公告)日：1978-04-25

申请号：US727814

申请日：1976-09-29

申请人： Robert J. Hager ,  Eric S. Johnson ,  M. Walter Scott ,  Ernest L. Stelzer

发明人： Robert J. Hager ,  Eric S. Johnson ,  M. Walter Scott ,  Ernest L. Stelzer

IPC分类号： H01L21/445 ,  H01L29/221 ,  H01L29/45 ,  H01L31/103 ,  B01J17/00

CPC分类号： H01L31/1032 ,  H01L21/445 ,  H01L24/05 ,  H01L29/221 ,  H01L29/45 ,  H01L2224/04042 ,  H01L2224/48463 ,  H01L2924/12043 ,  H01L2924/15747

摘要： Ohmic contacts to p-type mercury cadmium telluride are prepared by depositing a Column IB metal on a surface of the p-type mercury cadmium telluride, depositing a buffer material on the Column IB metal, and contacting the buffer material with a bonding material which is capable of alloying with the Column IB metal. The buffer material prevents alloying between the Column IB metal and the bonding material.

摘要翻译： 通过在p型汞镉碲的表面上沉积柱状IB金属制备p型碲化镉碲的欧姆接触，在第1B栏金属上沉积缓冲材料，并将缓冲材料与粘结材料接触， 能够与IB柱金属合金化。 缓冲材料防止了柱IB金属和粘合材料之间的合金化。

公开(公告)号：US20180019347A1

公开(公告)日：2018-01-18

申请号：US15465740

申请日：2017-03-22

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人： Doo Hyeb Youn ,  Sun Jin YUN ,  Changbong YEON ,  Young-Jun YU

IPC分类号： H01L29/786 ,  H01L29/45 ,  H01L29/24 ,  H01L29/16 ,  H01L21/4763 ,  H01L21/445 ,  H01L29/66 ,  H01L21/04

CPC分类号： H01L29/78618 ,  H01L21/043 ,  H01L21/445 ,  H01L21/47635 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/45 ,  H01L29/66045 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/78684 ,  H01L29/78696

摘要： Disclosed are an electronic device and a method of fabricating the same. The method of fabricating an electronic device comprises providing on a substrate a channel layer including a two-dimensional material, providing a metal fiber layer on a first surface of a conductive layer, providing the metal fiber layer on the channel layer, and performing a thermal treatment process to form a junction layer where a portion of the metal fiber layer is covalently bonded to a portion of the channel layer.

公开(公告)号：US20170179304A1

公开(公告)日：2017-06-22

申请号：US15453089

申请日：2017-03-08

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Joel P. de Souza ,  Keith E. Fogel ,  Jeehwan Kim ,  Devendra K. Sadana

IPC分类号： H01L29/786 ,  H01L29/417 ,  H01L27/12 ,  H01L21/445 ,  H01L21/425 ,  H01L21/768 ,  H01L29/45 ,  H01L29/66

CPC分类号： H01L29/0847 ,  H01L21/02488 ,  H01L21/02521 ,  H01L21/02551 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02587 ,  H01L21/425 ,  H01L21/445 ,  H01L21/76895 ,  H01L21/84 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/0638 ,  H01L29/263 ,  H01L29/267 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66772 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/78654 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

摘要： A semiconductor device includes an extremely thin semiconductor-on-insulator substrate (ETSOI) having a base substrate, a thin semiconductor layer and a buried dielectric therebetween. A device channel is formed in the thin semiconductor layer. Source and drain regions are formed at opposing positions relative to the device channel. The source and drain regions include an n-type material deposited on the buried dielectric within a thickness of the thin semiconductor layer. A gate structure is formed over the device channel.