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    Water soluble negative tone photoresist
    52.
    发明授权
    Water soluble negative tone photoresist 有权
    水溶性负色光致抗蚀剂

    公开(公告)号：US07524607B2

    公开(公告)日：2009-04-28

    申请号：US11373648

    申请日：2006-03-10

    Applicant: Bang-Chien Ho ,  Jian-Hong Chen

    Inventor： Bang-Chien Ho ,  Jian-Hong Chen

    IPC: G03F7/038

    CPC classification number: G03F7/40 ,  G03F7/0035 ,  G03F7/038

    Abstract: A method is described for reducing the space width of holes in a first resist pattern and simultaneously removing unwanted holes to change the pattern density in the resulting second pattern. This technique provides holes with a uniform space width as small as 100 nm or less that is independent of pattern density in the second pattern. A positive resist is patterned to form holes with a first pattern density and first space width. A water soluble negative resist is coated over the first resist and selectively exposed to form a second patterned layer consisting of water insoluble plugs in unwanted holes in the first pattern and a thin water insoluble layer on the first resist pattern in unexposed portions. The plugs may form dense and isolated hole arrays while the thin insoluble layer reduces space width to the same extent in remaining holes in the second pattern.

    Abstract translation: 描述了一种用于减小第一抗蚀剂图案中的孔的空间宽度并同时去除不需要的孔以改变所得第二图案中的图案密度的方法。 该技术提供具有小于100nm或更小的均匀空间宽度的孔，其与第二图案中的图案密度无关。 图案化正性抗蚀剂以形成具有第一图案密度和第一空间宽度的孔。 将水溶性负性抗蚀剂涂覆在第一抗蚀剂上并选择性地暴露以形成第二图案层，该第二图案层由第一图案中不想要的孔中的水不溶性塞子和未曝光部分中的第一抗蚀剂图案上的薄水不溶性层组成。 塞子可以形成致密和隔离的孔阵列，而薄不溶层在第二图案中的剩余孔中减小相同程度的空间宽度。

    MATERIAL AND METHOD FOR PHOTOLITHOGRAPHY
    53.
    发明申请
    MATERIAL AND METHOD FOR PHOTOLITHOGRAPHY 有权
    光刻技术的材料与方法

    公开(公告)号：US20080286682A1

    公开(公告)日：2008-11-20

    申请号：US11748322

    申请日：2007-05-14

    Applicant: Hsiao-Wei Yeh ,  Jen-Chieh Shih ,  Jian-Hong Chen

    Inventor： Hsiao-Wei Yeh ,  Jen-Chieh Shih ,  Jian-Hong Chen

    IPC: G03C1/00 ,  G03C5/00

    CPC classification number: G03F7/0397 ,  G03F7/11 ,  G03F7/168 ,  G03F7/2041 ,  Y10S430/108 ,  Y10S430/111

    Abstract: A photosensitive material for use in semiconductor manufacture comprises a copolymer that includes a plurality of photoresist chains and a plurality of hydrophobic chains, each hydrophobic chain attached to the end of one of the photoresist chains. The copolymer in response to externally applied energy will self-assemble to a photoresist layer and a hydrophobic layer.

    Abstract translation: 用于半导体制造的感光材料包括共聚物，其包括多个光致抗蚀剂链和多个疏水链，每个疏水链连接到一个光致抗蚀剂链的末端。 响应于外部施加的能量的共聚物将自组装到光致抗蚀剂层和疏水层。

    Dual damascene process
    54.
    发明授权
    Dual damascene process 有权
    双镶嵌工艺

    公开(公告)号：US07253112B2

    公开(公告)日：2007-08-07

    申请号：US10915633

    申请日：2004-08-10

    Applicant: Bang-Chien Ho ,  Jian-Hong Chen ,  Tsang-Jiuh Wu ,  Li-Te Lin ,  Li-Chih Chao ,  Hua-Tai Lin ,  Shyue-Sheng Lu

    Inventor： Bang-Chien Ho ,  Jian-Hong Chen ,  Tsang-Jiuh Wu ,  Li-Te Lin ,  Li-Chih Chao ,  Hua-Tai Lin ,  Shyue-Sheng Lu

    IPC: H01L21/311

    CPC classification number: H01L21/76808

    Abstract: A method of fabricating semiconductor devices using dual damascene processes to form plugs in the via holes composed of various high etch materials and bottom anti-reflection coating (BARC) materials. After via hole etch, a layer of high etch rate plug material is spin coated to fill the via holes. Next, a layer of photoresist is applied. The photoresist is then exposed through a mask and developed to form an etch opening. Using the remaining photoresist as an etch mask and with a bottom anti-reflection coating (BARC) as protection, the oxide or low k layer is etched to form subsequent wiring. The etch step is known as a damascene etch step. The remaining photoresist is removed and the trench/via openings are filled with metal forming inlaid metal interconnect wiring and contact vias.

    Abstract translation: 使用双镶嵌工艺制造半导体器件的方法来在由各种高蚀刻材料和底部抗反射涂层（BARC）材料组成的通孔中形成插塞。 在通孔蚀刻之后，旋涂一层高蚀刻速率的塞材料以填充通孔。 接下来，施加一层光致抗蚀剂。 然后将光致抗蚀剂通过掩模曝光并显影以形成蚀刻开口。 使用剩余的光致抗蚀剂作为蚀刻掩模和底部防反射涂层（BARC）作为保护，氧化物或低k层被蚀刻以形成后续布线。 蚀刻步骤被称为镶嵌蚀刻步骤。 去除剩余的光致抗蚀剂，并且通过金属形成金属互连布线和接触通孔填充沟槽/通孔开口。

    Water soluble negative tone photoresist
    55.
    发明申请
    Water soluble negative tone photoresist 有权

    公开(公告)号：US20060154177A1

    公开(公告)日：2006-07-13

    申请号：US11373648

    申请日：2006-03-10

    Applicant: Bang-Chien Ho ,  Jian-Hong Chen

    Inventor： Bang-Chien Ho ,  Jian-Hong Chen

    IPC: G03C1/76

    CPC classification number: G03F7/40 ,  G03F7/0035 ,  G03F7/038

    Abstract: A method is described for reducing the space width of holes in a first resist pattern and simultaneously removing unwanted holes to change the pattern density in the resulting second pattern. This technique provides holes with a uniform space width as small as 100 nm or less that is independent of pattern density in the second pattern. A positive resist is patterned to form holes with a first pattern density and first space width. A water soluble negative resist is coated over the first resist and selectively exposed to form a second patterned layer consisting of water insoluble plugs in unwanted holes in the first pattern and a thin water insoluble layer on the first resist pattern in unexposed portions. The plugs may form dense and isolated hole arrays while the thin insoluble layer reduces space width to the same extent in remaining holes in the second pattern.

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