公开(公告)号：US07399709B1

公开(公告)日：2008-07-15

申请号：US10256401

申请日：2002-09-27

申请人： Burn-Jeng Lin ,  Hua-Tai Lin ,  Ru-Gun Liu ,  Tsai-Sheng Gau ,  Bang-Chien Ho

发明人： Burn-Jeng Lin ,  Hua-Tai Lin ,  Ru-Gun Liu ,  Tsai-Sheng Gau ,  Bang-Chien Ho

IPC分类号： H01L21/302

CPC分类号： H01L21/31144 ,  H01L21/0271 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/32139 ,  H01L21/76802 ,  H01L21/76808 ,  H01L2221/1026

摘要： An image reversal method is described that removes the etch resistance requirement from a resist. A high resolution resist pattern comprised of islands, lines, or trenches is formed with a large process window by exposing through one or more masks including phase edge masks and optionally with resolution enhancement techniques. A complementary material replacement (CMR) layer comprised of an organic polymer or material such as fluorosilicate glass which has a lower etch rate than the resist is coated over the resist pattern. CMR and resist layers are etched simultaneously to provide an image reversed pattern in the CMR layer which is etch transferred into a substrate. The method avoids edge roughness like bird's beak defects in the etched pattern and is useful for applications including forming contact holes in dielectric layers, forming polysilicon gates, and forming trenches in a damascene process. It is also valuable for direct write methods where an image reversal scheme is desired.

摘要翻译： 描述了去除抗蚀剂的耐蚀刻性要求的图像反转方法。 由岛，线或沟槽组成的高分辨率抗蚀剂图案通过暴露于包括相位边缘掩模的一个或多个掩模以及可选地具有分辨率增强技术而由大的工艺窗口形成。 由有机聚合物或诸如氟硅酸盐玻璃的材料组成的互补材料置换（CMR）层被涂覆在抗蚀剂图案上。 同时蚀刻CMR和抗蚀剂层以在CMR层中提供图像反转图案，其被蚀刻转移到衬底中。 该方法避免了像蚀刻图案中的鸟喙缺陷那样的边缘粗糙度，并且可用于包括在电介质层中形成接触孔，形成多晶硅栅极以及在镶嵌工艺中形成沟槽的应用。 对于需要图像反转方案的直接写入方法也是有价值的。

公开(公告)号：US07033735B2

公开(公告)日：2006-04-25

申请号：US10714998

申请日：2003-11-17

申请人： Bang-Chien Ho ,  Jian-Hong Chen

发明人： Bang-Chien Ho ,  Jian-Hong Chen

IPC分类号： G03C1/735

CPC分类号： G03F7/40 ,  G03F7/0035 ,  G03F7/038

摘要： A method is described for reducing the space width of holes in a first resist pattern and simultaneously removing unwanted holes to change the pattern density in the resulting second pattern. This technique provides holes with a uniform space width as small as 100 nm or less that is independent of pattern density in the second pattern. A positive resist is patterned to form holes with a first pattern density and first space width. A water soluble negative resist is coated over the first resist and selectively exposed to form a second patterned layer consisting of water insoluble plugs in unwanted holes in the first pattern and a thin water insoluble layer on the first resist pattern in unexposed portions. The plugs may form dense and isolated hole arrays while the thin insoluble layer reduces space width to the same extent in remaining holes in the second pattern.

公开(公告)号：US20050014362A1

公开(公告)日：2005-01-20

申请号：US10915633

申请日：2004-08-10

申请人： Bang-Chien Ho ,  Jian-Hong Chen ,  Tsang-Jiuh Wu ,  Li-Te Lin ,  Li-Chih Chao ,  Hua-Tai Lin ,  Shyue-Sheng Lu

发明人： Bang-Chien Ho ,  Jian-Hong Chen ,  Tsang-Jiuh Wu ,  Li-Te Lin ,  Li-Chih Chao ,  Hua-Tai Lin ,  Shyue-Sheng Lu

IPC分类号： H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/76808

摘要： A method of fabricating semiconductor devices using dual damascene processes to form plugs in the via holes composed of various high etch materials and bottom anti-reflection coating (BARC) materials. After via hole etch, a layer of high etch rate plug material is spin coated to fill the via holes. Next, a layer of photoresist is applied. The photoresist is then exposed through a mask and developed to form an etch opening. Using the remaining photoresist as an etch mask and with a bottom anti-reflection coating (BARC) as protection, the oxide or low k layer is etched to form subsequent wiring. The etch step is known as a damascene etch step. The remaining photoresist is removed and the trench/via openings are filled with metal forming inlaid metal interconnect wiring and contact vias.

摘要翻译： 使用双镶嵌工艺制造半导体器件的方法来在由各种高蚀刻材料和底部抗反射涂层（BARC）材料构成的通孔中形成插塞。 在通孔蚀刻之后，旋涂一层高蚀刻速率的塞材料以填充通孔。 接下来，施加一层光致抗蚀剂。 然后将光致抗蚀剂通过掩模曝光并显影以形成蚀刻开口。 使用剩余的光致抗蚀剂作为蚀刻掩模和底部防反射涂层（BARC）作为保护，氧化物或低k层被蚀刻以形成后续布线。 蚀刻步骤被称为镶嵌蚀刻步骤。 去除剩余的光致抗蚀剂，并且通过金属形成金属互连布线和接触通孔填充沟槽/通孔开口。

公开(公告)号：US07524607B2

公开(公告)日：2009-04-28

申请号：US11373648

申请日：2006-03-10

申请人： Bang-Chien Ho ,  Jian-Hong Chen

发明人： Bang-Chien Ho ,  Jian-Hong Chen

IPC分类号： G03F7/038

CPC分类号： G03F7/40 ,  G03F7/0035 ,  G03F7/038

摘要： A method is described for reducing the space width of holes in a first resist pattern and simultaneously removing unwanted holes to change the pattern density in the resulting second pattern. This technique provides holes with a uniform space width as small as 100 nm or less that is independent of pattern density in the second pattern. A positive resist is patterned to form holes with a first pattern density and first space width. A water soluble negative resist is coated over the first resist and selectively exposed to form a second patterned layer consisting of water insoluble plugs in unwanted holes in the first pattern and a thin water insoluble layer on the first resist pattern in unexposed portions. The plugs may form dense and isolated hole arrays while the thin insoluble layer reduces space width to the same extent in remaining holes in the second pattern.

摘要翻译： 描述了一种用于减小第一抗蚀剂图案中的孔的空间宽度并同时去除不需要的孔以改变所得第二图案中的图案密度的方法。 该技术提供具有小于100nm或更小的均匀空间宽度的孔，其与第二图案中的图案密度无关。 图案化正性抗蚀剂以形成具有第一图案密度和第一空间宽度的孔。 将水溶性负性抗蚀剂涂覆在第一抗蚀剂上并选择性地暴露以形成第二图案层，该第二图案层由第一图案中不想要的孔中的水不溶性塞子和未曝光部分中的第一抗蚀剂图案上的薄水不溶性层组成。 塞子可以形成致密和隔离的孔阵列，而薄不溶层在第二图案中的剩余孔中减小相同程度的空间宽度。

公开(公告)号：US07253112B2

公开(公告)日：2007-08-07

申请号：US10915633

申请日：2004-08-10

申请人： Bang-Chien Ho ,  Jian-Hong Chen ,  Tsang-Jiuh Wu ,  Li-Te Lin ,  Li-Chih Chao ,  Hua-Tai Lin ,  Shyue-Sheng Lu

发明人： Bang-Chien Ho ,  Jian-Hong Chen ,  Tsang-Jiuh Wu ,  Li-Te Lin ,  Li-Chih Chao ,  Hua-Tai Lin ,  Shyue-Sheng Lu

IPC分类号： H01L21/311

CPC分类号： H01L21/76808

摘要： A method of fabricating semiconductor devices using dual damascene processes to form plugs in the via holes composed of various high etch materials and bottom anti-reflection coating (BARC) materials. After via hole etch, a layer of high etch rate plug material is spin coated to fill the via holes. Next, a layer of photoresist is applied. The photoresist is then exposed through a mask and developed to form an etch opening. Using the remaining photoresist as an etch mask and with a bottom anti-reflection coating (BARC) as protection, the oxide or low k layer is etched to form subsequent wiring. The etch step is known as a damascene etch step. The remaining photoresist is removed and the trench/via openings are filled with metal forming inlaid metal interconnect wiring and contact vias.

摘要翻译： 使用双镶嵌工艺制造半导体器件的方法来在由各种高蚀刻材料和底部抗反射涂层（BARC）材料组成的通孔中形成插塞。 在通孔蚀刻之后，旋涂一层高蚀刻速率的塞材料以填充通孔。 接下来，施加一层光致抗蚀剂。 然后将光致抗蚀剂通过掩模曝光并显影以形成蚀刻开口。 使用剩余的光致抗蚀剂作为蚀刻掩模和底部防反射涂层（BARC）作为保护，氧化物或低k层被蚀刻以形成后续布线。 蚀刻步骤被称为镶嵌蚀刻步骤。 去除剩余的光致抗蚀剂，并且通过金属形成金属互连布线和接触通孔填充沟槽/通孔开口。

公开(公告)号：US20060154177A1

公开(公告)日：2006-07-13

申请号：US11373648

申请日：2006-03-10

申请人： Bang-Chien Ho ,  Jian-Hong Chen

发明人： Bang-Chien Ho ,  Jian-Hong Chen

IPC分类号： G03C1/76

CPC分类号： G03F7/40 ,  G03F7/0035 ,  G03F7/038

摘要： A method is described for reducing the space width of holes in a first resist pattern and simultaneously removing unwanted holes to change the pattern density in the resulting second pattern. This technique provides holes with a uniform space width as small as 100 nm or less that is independent of pattern density in the second pattern. A positive resist is patterned to form holes with a first pattern density and first space width. A water soluble negative resist is coated over the first resist and selectively exposed to form a second patterned layer consisting of water insoluble plugs in unwanted holes in the first pattern and a thin water insoluble layer on the first resist pattern in unexposed portions. The plugs may form dense and isolated hole arrays while the thin insoluble layer reduces space width to the same extent in remaining holes in the second pattern.

公开(公告)号：US20050106493A1

公开(公告)日：2005-05-19

申请号：US10714998

申请日：2003-11-17

申请人： Bang-Chien Ho ,  Jian-Hong Chen

发明人： Bang-Chien Ho ,  Jian-Hong Chen

IPC分类号： G03C5/00 ,  G03F7/00 ,  G03F7/038 ,  G03F7/40

CPC分类号： G03F7/40 ,  G03F7/0035 ,  G03F7/038

摘要： A method is described for reducing the space width of holes in a first resist pattern and simultaneously removing unwanted holes to change the pattern density in the resulting second pattern. This technique provides holes with a uniform space width as small as 100 nm or less that is independent of pattern density in the second pattern. A positive resist is patterned to form holes with a first pattern density and first space width. A water soluble negative resist is coated over the first resist and selectively exposed to form a second patterned layer consisting of water insoluble plugs in unwanted holes in the first pattern and a thin water insoluble layer on the first resist pattern in unexposed portions. The plugs may form dense and isolated hole arrays while the thin insoluble layer reduces space width to the same extent in remaining holes in the second pattern.

摘要翻译： 描述了一种用于减小第一抗蚀剂图案中的孔的空间宽度并同时去除不需要的孔以改变所得第二图案中的图案密度的方法。 该技术提供具有小于100nm或更小的均匀空间宽度的孔，其与第二图案中的图案密度无关。 图案化正性抗蚀剂以形成具有第一图案密度和第一空间宽度的孔。 将水溶性负性抗蚀剂涂覆在第一抗蚀剂上并选择性地暴露以形成第二图案层，该第二图案层由第一图案中不想要的孔中的水不溶性塞子和未曝光部分中的第一抗蚀剂图案上的薄水不溶性层组成。 塞子可以形成致密和隔离的孔阵列，而薄不溶层在第二图案中的剩余孔中减小相同程度的空间宽度。