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68 条记录 (耗时 0.031 秒)

    Four-Terminal Reconfigurable Devices
    51.
    发明申请
    Four-Terminal Reconfigurable Devices 有权
    四端可重构设备

    公开(公告)号：US20100038621A1

    公开(公告)日：2010-02-18

    申请号：US12544089

    申请日：2009-08-19

    申请人： Kuan-Neng Chen ,  Lia Krusin-Elbaum

    发明人： Kuan-Neng Chen ,  Lia Krusin-Elbaum

    IPC分类号： H01L45/00

    CPC分类号： H01L45/148 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/126 ,  H01L45/144

    摘要： Reconfigurable devices and methods for the fabrication thereof are provided. In one aspect, a reconfigurable device is provided. The reconfigurable device comprises a substrate; a first dielectric layer on the substrate; a conductive layer recessed into at least a portion of a side of the first dielectric layer opposite the substrate; at least one second dielectric layer over the side of the first dielectric layer opposite the substrate, so as to cover the conductive layer; a heater within the second dielectric layer; at least one programmable via extending through the second dielectric layer, extending through and surrounded by the heater and in contact with the conductive layer, the programmable via comprising at least one phase change material; a capping layer over the programmable via; a first conductive via and a second conductive via, each extending through the second dielectric layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive layer.

    摘要翻译： 提供了可重构的装置及其制造方法。 在一个方面，提供了可重新配置的设备。 可重构装置包括基板; 基底上的第一介电层; 导电层，凹入到与衬底相对的第一电介质层的一侧的至少一部分中; 在所述第一电介质层的与所述衬底相对的一侧上的至少一个第二电介质层，以覆盖所述导电层; 第二介电层内的加热器; 至少一个可编程通道延伸穿过第二电介质层，延伸穿过并被加热器包围并与导电层接触，该可编程通孔包括至少一个相变材料; 可编程通道上的覆盖层; 第一导电通孔和第二导电通孔，每个延伸通过第二介电层并与加热器接触; 以及延伸穿过第二介电层并与导电层接触的第三导电通孔。

    Smoothing and stabilization of domain walls in perpendicularly polarized magnetic films
    53.
    发明授权
    Smoothing and stabilization of domain walls in perpendicularly polarized magnetic films 失效

    公开(公告)号：US06579635B2

    公开(公告)日：2003-06-17

    申请号：US09916660

    申请日：2001-07-26

    申请人： Lia Krusin-Elbaum ,  Takasada Shibauchi

    发明人： Lia Krusin-Elbaum ,  Takasada Shibauchi

    IPC分类号： G11B566

    CPC分类号： H01F41/32 ,  B82Y25/00 ,  G11B5/66 ,  G11B2005/0005 ,  H01F10/16 ,  H01F10/30 ,  H01F10/3286

    摘要： A ferromagnetic film suitable for ultra-high density perpendicular recording, and a process for producing the film. The process generally entails forming a film of ferromagnetic material on a surface of a substrate, such that the film is characterized by perpendicular magnetic anisotropy and comprises a plurality of magnetic domains defined by domain walls perpendicular to a major surface of the film. The ferromagnetic film is formed to have a linear strain defect for the purpose of smoothing and stabilizing the domain walls during subsequent magnetization reversal of the ferromagnetic material. Such smoothing and stabilizing serves to control temporal magnetic noise due to motion of magnetic domains, arrest domain wall motion (reducing velocity) when the film is subjected to the magnetic reversal fields, and controls spatial magnetic noise due to domain wall jaggedness.

    Programmable via structure and method of fabricating same
    55.
    发明授权
    Programmable via structure and method of fabricating same 有权
    可编程通孔结构及其制造方法

    公开(公告)号：US07652278B2

    公开(公告)日：2010-01-26

    申请号：US11612631

    申请日：2006-12-19

    申请人： Kuan-Neng Chen ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Albert M. Young

    发明人： Kuan-Neng Chen ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Albert M. Young

    IPC分类号： H01L29/02 ,  H01L21/06

    CPC分类号： H01L45/122 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1286 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683

    摘要： A programmable via structure is provided as well as a method of fabricating the same. The inventive programmable via a semiconductor substrate. An oxide layer such as a thermal oxide is located on a surface of the semiconductor substrate. A patterned heating material is located on a surface of the oxide layer. The inventive structure also includes a patterned dielectric material having a least one via filled with a phase change material (PCM). The patterned dielectric material including the PCM filled via is located on a surface of the patterned heating material. A patterned diffusion barrier is located on an exposed surface of said at least one via filled with the phase change material. The inventive structure also includes contact vias that extend through the patterned dielectric material. The contact vias are filled with a conductive material which also extends onto the upper surface of the patterned dielectric material. A conductive material which serves as the input of the device is located atop the patterned diffusion barrier that is located directly above the via that is filled with the phase change material.

    摘要翻译： 提供了可编程通孔结构以及其制造方法。 本发明可编程通过半导体衬底。 诸如热氧化物的氧化物层位于半导体衬底的表面上。 图案化的加热材料位于氧化物层的表面上。 本发明的结构还包括具有填充有相变材料（PCM）的至少一个通孔的图案化电介质材料。 包括PCM填充通孔的图案化电介质材料位于图案化加热材料的表面上。 图案化扩散阻挡层位于所述至少一个充满相变材料的通孔的暴露表面上。 本发明的结构还包括延伸通过图案化电介质材料的接触孔。 接触通孔填充有也延伸到图案化电介质材料的上表面上的导电材料。 用作器件输入的导电材料位于图案化的扩散阻挡层的顶部，其位于通过相变材料填充的正上方。

    Four-Terminal Reconfigurable Devices
    56.
    发明申请
    Four-Terminal Reconfigurable Devices 失效
    四端可重构设备

    公开(公告)号：US20090014885A1

    公开(公告)日：2009-01-15

    申请号：US11776295

    申请日：2007-07-11

    申请人： Kuan-Neng Chen ,  Lia Krusin-Elbaum

    发明人： Kuan-Neng Chen ,  Lia Krusin-Elbaum

    IPC分类号： H01L23/52 ,  H01L21/4763

    CPC分类号： H01L45/148 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/126 ,  H01L45/144

    摘要： Reconfigurable devices and methods for the fabrication thereof are provided. In one aspect, a reconfigurable device is provided. The reconfigurable device comprises a substrate, a first dielectric layer on the substrate; a conductive layer recessed into at least a portion of a side of the first dielectric layer opposite the substrate; at least one second dielectric layer over the side of the first dielectric layer opposite the substrate, so as to cover the conductive layer; a heater within the second dielectric layer; at least one programmable via extending through the second dielectric layer, extending through and surrounded by the heater and in contact with the conductive layer the programmable via comprising at least one phase change material; a capping layer over the programmable via; a first conductive via and a second conductive via, each extending through the second dielectric layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive layer.

    摘要翻译： 提供了可重构的装置及其制造方法。 在一个方面，提供了可重新配置的设备。 所述可重构装置包括基板，所述基板上的第一介电层; 导电层，凹入到与衬底相对的第一电介质层的一侧的至少一部分中; 在所述第一电介质层的与所述衬底相对的一侧上的至少一个第二电介质层，以覆盖所述导电层; 第二介电层内的加热器; 至少一个可编程通孔延伸穿过第二电介质层，延伸并通过加热器包围并与导电层接触，可编程通孔包括至少一个相变材料; 可编程通道上的覆盖层; 第一导电通孔和第二导电通孔，每个延伸通过第二介电层并与加热器接触; 以及延伸穿过第二介电层并与导电层接触的第三导电通孔。

    Hall sensor with high spatial resolution in two directions concurrently
    58.
    发明授权
    Hall sensor with high spatial resolution in two directions concurrently 失效
    霍尔传感器同时具有两个方向的高空间分辨率

    公开(公告)号：US5543988A

    公开(公告)日：1996-08-06

    申请号：US479252

    申请日：1995-06-07

    申请人： Michael J. Brady ,  Lia Krusin-Elbaum ,  William T. Masselink ,  Padmanabhan Santhanam ,  Tsuyoshi Tamegai

    发明人： Michael J. Brady ,  Lia Krusin-Elbaum ,  William T. Masselink ,  Padmanabhan Santhanam ,  Tsuyoshi Tamegai

    IPC分类号： G01R33/06 ,  G11B5/012 ,  G11B5/37 ,  H01L43/06 ,  H01L29/82

    CPC分类号： G11B5/376 ,  G01R33/06 ,  G11B5/012 ,  H01L43/065

    摘要： A magnetic sensor, memory, and magnetic imager has been described for sensing a magnetic field in two directions concurrently incorporating a bar of semiconductor material having a rectangular cross-section, electrodes for introducing current along the length of the semiconductor material, and electrodes positioned on respective corners of the rectangular cross-section at a common distance along the current path whereby the Hall voltage may be detected concurrently in two directions. The memory includes the above magnetic sensor plus a disk having a magnetic layer thereon for storing information, a positioner for moving the disk, a memory control circuit and a signal processor circuit. The magnetic imager includes a plurality of magnetic field sensors positioned in a one or two-dimensional array. The invention overcomes the problem of mapping magnetic fields with high spatial resolution with high magnetic sensitivity in two directions concurrently.

    摘要翻译： 已经描述了一种磁传感器，存储器和磁性成像器，用于感测两个方向上的磁场，同时结合具有矩形横截面的半导体材料棒，用于沿半导体材料的长度引入电流的电极和位于 在沿着电流路径的公共距离处的矩形横截面的各个角部，由此可以在两个方向上同时检测霍尔电压。 存储器包括上述磁传感器加上用于存储信息的磁层上的磁盘，用于移动磁盘的定位器，存储器控制电路和信号处理器电路。 磁性成像器包括以一维或二维阵列定位的多个磁场传感器。 本发明克服了在两个方向同时映射具有高磁敏度的高空间分辨率磁场的问题。

    Four-terminal reconfigurable devices
    59.
    发明授权
    Four-terminal reconfigurable devices 有权
    四端可重新配置设备

    公开(公告)号：US08053752B2

    公开(公告)日：2011-11-08

    申请号：US12987089

    申请日：2011-01-08

    申请人： Kuan-Neng Chen ,  Lia Krusin-Elbaum

    发明人： Kuan-Neng Chen ,  Lia Krusin-Elbaum

    IPC分类号： H01L29/04

    CPC分类号： H01L45/148 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/126 ,  H01L45/144

    摘要： Reconfigurable devices and methods for the fabrication thereof are provided. In one aspect, a reconfigurable device is provided. The reconfigurable device comprises a substrate; a first dielectric layer on the substrate; a conductive layer recessed into at least a portion of a side of the first dielectric layer opposite the substrate; at least one second dielectric layer over the side of the first dielectric layer opposite the substrate, so as to cover the conductive layer; a heater within the second dielectric layer; at least one programmable via extending through the second dielectric layer, extending through and surrounded by the heater and in contact with the conductive layer, the programmable via comprising at least one phase change material; a capping layer over the programmable via; a first conductive via and a second conductive via, each extending through the second dielectric layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive layer.

    摘要翻译： 提供了可重构的装置及其制造方法。 在一个方面，提供了可重新配置的设备。 可重构装置包括基板; 基底上的第一介电层; 导电层，凹入到与衬底相对的第一电介质层的一侧的至少一部分中; 在所述第一电介质层的与所述衬底相对的一侧上的至少一个第二电介质层，以覆盖所述导电层; 第二介电层内的加热器; 至少一个可编程通道延伸穿过第二电介质层，延伸穿过并被加热器包围并与导电层接触，该可编程通孔包括至少一个相变材料; 可编程通道上的覆盖层; 第一导电通孔和第二导电通孔，每个延伸通过第二介电层并与加热器接触; 以及延伸穿过第二介电层并与导电层接触的第三导电通孔。

    PROGRAMMABLE VIA STRUCTURE AND METHOD OF FABRICATING SAME
    60.
    发明申请
    PROGRAMMABLE VIA STRUCTURE AND METHOD OF FABRICATING SAME 有权
    可编程通过结构和制作方法

    公开(公告)号：US20090311858A1

    公开(公告)日：2009-12-17

    申请号：US12538120

    申请日：2009-08-08

    申请人： Kuan-Neng Chen ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Albert M. Young

    发明人： Kuan-Neng Chen ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Albert M. Young

    IPC分类号： H01L21/768

    CPC分类号： H01L45/122 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1286 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683

    摘要： A programmable via structure is provided as well as a method of fabricating the same. The inventive programmable via a semiconductor substrate. An oxide layer such as a thermal oxide is located on a surface of the semiconductor substrate. A patterned heating material is located on a surface of the oxide layer. The inventive structure also includes a patterned dielectric material having a least one via filled with a phase change material (PCM). The patterned dielectric material including the PCM filled via is located on a surface of the patterned heating material. A patterned diffusion barrier is located on an exposed surface of said at least one via filled with the phase change material. The inventive structure also includes contact vias that extend through the patterned dielectric material. The contact vias are filled with a conductive material which also extends onto the upper surface of the patterned dielectric material. A conductive material which serves as the input of the device is located atop the patterned diffusion barrier that is located directly above the via that is filled with the phase change material.

    摘要翻译： 提供了可编程通孔结构以及其制造方法。 本发明可编程通过半导体衬底。 诸如热氧化物的氧化物层位于半导体衬底的表面上。 图案化的加热材料位于氧化物层的表面上。 本发明的结构还包括具有填充有相变材料（PCM）的至少一个通孔的图案化电介质材料。 包括PCM填充通孔的图案化电介质材料位于图案化加热材料的表面上。 图案化扩散阻挡层位于所述至少一个充满相变材料的通孔的暴露表面上。 本发明的结构还包括延伸通过图案化电介质材料的接触孔。 接触通孔填充有也延伸到图案化电介质材料的上表面上的导电材料。 用作器件输入的导电材料位于图案化的扩散阻挡层的顶部，其位于通过相变材料填充的正上方。