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28 条记录 (耗时 0.023 秒)

    Compound with room temperature electrical resistivity comparable to that of elemental copper
    3.
    发明授权
    Compound with room temperature electrical resistivity comparable to that of elemental copper 失效
    具有与元素铜相当的室温电阻率的化合物

    公开(公告)号：US5288456A

    公开(公告)日：1994-02-22

    申请号：US021146

    申请日：1993-02-23

    申请人： Mohamed O. Aboelfotoh ,  Michael J. Brady ,  Lia Krusin-Elbaum

    发明人： Mohamed O. Aboelfotoh ,  Michael J. Brady ,  Lia Krusin-Elbaum

    IPC分类号： C22C1/00 ,  C22C9/00 ,  C23C14/06

    CPC分类号： C22C9/00 ,  H01L23/53233 ,  H01L2924/0002

    摘要： The present invention relates to novel compounds that exhibit unusually low electrical resistivity at room temperature. More specifically, it has been discovered that the incorporation of at least 1 to 15 atomic percent of gallium and/or at least 1 to 15 atomic percent gold into stoichiometric copper germanide (Cu.sub.3 Ge) compound results in a room temperature resistivity comparable to elemental copper, but with superior chemical and electronic stability upon exposure to air or oxygen at high temperatures. Furthermore, the compounds of the present invention have none of the problems associated with the diffusion of copper into elemental and compound semiconductors which oftentimes lead to the degradation of the semiconductor device characteristics. Additionally, the present invention relates to a method of preparing the novel compounds mentioned previously hereinabove.

    摘要翻译： 本发明涉及在室温下表现出非常低的电阻率的新型化合物。 更具体地，已经发现，将至少1至15原子％的镓和/或至少1至15原子％的金掺入化学计量的锗化锗（Cu 3 Ge）化合物中导致与元素铜相当的室温电阻率， 但在高温下暴露于空气或氧气时具有优异的化学和电子稳定性。 此外，本发明的化合物没有与铜扩散到元素和化合物半导体中的任何问题，这常常导致半导体器件特性的劣化。 另外，本发明涉及一种制备上述前述新颖化合物的方法。

    Process of deposition and solid state reaction for making alloyed highly conductive copper germanide
    4.
    发明授权
    Process of deposition and solid state reaction for making alloyed highly conductive copper germanide 失效
    用于制造合金化高导电性锗酸锗的沉积和固态反应过程

    公开(公告)号：US5330592A

    公开(公告)日：1994-07-19

    申请号：US148593

    申请日：1993-11-08

    申请人： Mohamed O. Aboelfotoh ,  Michael J. Brady ,  Lia Krusin-Elbaum

    发明人： Mohamed O. Aboelfotoh ,  Michael J. Brady ,  Lia Krusin-Elbaum

    IPC分类号： C22C1/00 ,  C22C9/00 ,  C23C14/06

    CPC分类号： C22C9/00 ,  H01L23/53233 ,  H01L2924/0002

    摘要： The present invention relates to novel compounds that exhibit unusually low electrical resistivity at room temperature. More specifically, it has been discovered that the incorporation of at least 1 to 15 atomic percent of gallium and/or at least 1 to 15 atomic percent gold into stoichiometric copper germanide (Cu.sub.3 Ge) compound results in a room temperature resistivity comparable to elemental copper, but with superior chemical and electronic stability upon exposure to air or oxygen at high temperatures. Furthermore, the compounds of the present invention have none of the problems associated with the diffusion of copper into elemental and compound semiconductors which oftentimes lead to the degradation of the semiconductor device characteristics. Additionally, the present invention relates to a method of preparing the novel compounds mentioned previously hereinabove.

    摘要翻译： 本发明涉及在室温下表现出非常低的电阻率的新型化合物。 更具体地，已经发现，将至少1至15原子％的镓和/或至少1至15原子％的金掺入化学计量的锗化锗（Cu 3 Ge）化合物中导致与元素铜相当的室温电阻率， 但在高温下暴露于空气或氧气时具有优异的化学和电子稳定性。 此外，本发明的化合物没有与铜扩散到元素和化合物半导体中的任何问题，这常常导致半导体器件特性的劣化。 另外，本发明涉及一种制备上述前述新颖化合物的方法。

    Hall sensor with high spatial resolution in two directions concurrently
    5.
    发明授权
    Hall sensor with high spatial resolution in two directions concurrently 失效
    霍尔传感器同时具有两个方向的高空间分辨率

    公开(公告)号：US5543988A

    公开(公告)日：1996-08-06

    申请号：US479252

    申请日：1995-06-07

    申请人： Michael J. Brady ,  Lia Krusin-Elbaum ,  William T. Masselink ,  Padmanabhan Santhanam ,  Tsuyoshi Tamegai

    发明人： Michael J. Brady ,  Lia Krusin-Elbaum ,  William T. Masselink ,  Padmanabhan Santhanam ,  Tsuyoshi Tamegai

    IPC分类号： G01R33/06 ,  G11B5/012 ,  G11B5/37 ,  H01L43/06 ,  H01L29/82

    CPC分类号： G11B5/376 ,  G01R33/06 ,  G11B5/012 ,  H01L43/065

    摘要： A magnetic sensor, memory, and magnetic imager has been described for sensing a magnetic field in two directions concurrently incorporating a bar of semiconductor material having a rectangular cross-section, electrodes for introducing current along the length of the semiconductor material, and electrodes positioned on respective corners of the rectangular cross-section at a common distance along the current path whereby the Hall voltage may be detected concurrently in two directions. The memory includes the above magnetic sensor plus a disk having a magnetic layer thereon for storing information, a positioner for moving the disk, a memory control circuit and a signal processor circuit. The magnetic imager includes a plurality of magnetic field sensors positioned in a one or two-dimensional array. The invention overcomes the problem of mapping magnetic fields with high spatial resolution with high magnetic sensitivity in two directions concurrently.

    摘要翻译： 已经描述了一种磁传感器，存储器和磁性成像器，用于感测两个方向上的磁场，同时结合具有矩形横截面的半导体材料棒，用于沿半导体材料的长度引入电流的电极和位于 在沿着电流路径的公共距离处的矩形横截面的各个角部，由此可以在两个方向上同时检测霍尔电压。 存储器包括上述磁传感器加上用于存储信息的磁层上的磁盘，用于移动磁盘的定位器，存储器控制电路和信号处理器电路。 磁性成像器包括以一维或二维阵列定位的多个磁场传感器。 本发明克服了在两个方向同时映射具有高磁敏度的高空间分辨率磁场的问题。

    Magnetostrictive/electrostrictive thin film memory
    8.
    发明授权
    Magnetostrictive/electrostrictive thin film memory 失效
    磁致伸缩/电致伸缩薄膜记忆

    公开(公告)号：US5239504A

    公开(公告)日：1993-08-24

    申请号：US684635

    申请日：1991-04-12

    申请人： Michael J. Brady ,  Stephane S. Dana ,  Richard J. Gambino

    发明人： Michael J. Brady ,  Stephane S. Dana ,  Richard J. Gambino

    IPC分类号： G11B11/10 ,  G11B5/00 ,  G11B5/49 ,  G11B11/105 ,  G11B11/11 ,  G11C11/14

    CPC分类号： G11B5/00 ,  G11B11/10504 ,  G11B11/11 ,  G11C11/14 ,  G11B5/4907 ,  G11B5/4938

    摘要： A data storage system is described which includes a magnetostrictive, anisotropic, ferromagnetic film whose domains exhibit a preferred orientation and are initially poled in one direction along the preferred orientation. A field is applied in opposition to the one direction, the field being insufficient to cause a switching of the poled domains. An electrostrictive film is placed in contact with the ferromagnetic film and a writing system is provided to actuate the electrostrictive film to impart stresses to the ferromagnetic film at selected locations. The induced stresses reduce the anisotropy energy of the ferromagnetic film at the selected locations and enable the domains thereat to become poled in accordance with the applied field. In one version of the invention, the writing means comprises a directed energy beam such as a laser or electron beam. In another version, the writing system employs surface acoustic waves in combination with a scanned energy beam.

    摘要翻译： 描述了一种数据存储系统，其包括磁致伸缩，各向异性的铁磁膜，其磁畴表现出优选的取向，并且沿着优选的取向开始沿一个方向极化。 与一个方向相反地施加一个场，该场不足以引起极化域的切换。 将电致伸缩膜放置成与铁磁膜接触，并且提供书写系统来致动电致伸缩膜以在选定位置向强磁性膜赋予应力。 感应应力降低了所选择的位置处的铁磁性膜的各向异性能，并且使得其上的畴根据所施加的场而变得极化。 在本发明的一个版本中，写入装置包括诸如激光或电子束的定向能量束。 在另一个版本中，书写系统使用表面声波与扫描能量束组合。