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    Tunable photonic band gap structures for microwave signals
    51.
    发明申请
    Tunable photonic band gap structures for microwave signals 有权
    微波信号的可调光子带隙结构

    公开(公告)号：US20050046523A1

    公开(公告)日：2005-03-03

    申请号：US10652460

    申请日：2003-09-02

    申请人： Jay Wu ,  Chunong Qiu ,  Cindy Qiu ,  Ishiang Shih

    发明人： Jay Wu ,  Chunong Qiu ,  Cindy Qiu ,  Ishiang Shih

    IPC分类号： H01P1/20 ,  H01P1/203

    CPC分类号： H01P1/2039 ,  H01P1/2005

    摘要： Photonic Band Gap (PBG) structures are utilized in microwave components as filters to suppress unwanted signals because they have the ability to produce a bandstop effect at certain frequency range depending on the structural dimensions. The unique property of PBG structures is due to the periodic change of the dielectric permittivity so interferences are created with the traveling electromagnetic waves. Such periodic arrangement could exist either inside of the dielectric substrate or in the ground plane of a microstrip transmission line structure. This invention provides tunable or switchable planar PBG structures, which contains lattice pattern of periodic perforations inside of the ground plane. The tuning or switching of the bandstop characteristics is achieved by depositing a conducting island surrounded by a layer of controllable thin film with variable conductivities. The controllable thin film layer could be photoconductive or temperature sensitive that allows change in its conductivity to occur by means of light illumination or temperature variation. Instead of depositing the controllable thin film with variable conductivity, freestanding thin film such as MEMS structures can also be utilized as the medium between the conducting islands and the ground plane. According to this invention, bandstop characteristics of the planar PBG structure are switched off when the controllable thin film is conductive or the freestanding thin film is in contact with the conducting islands and the ground plane. Meanwhile the bandstop characteristics are switched on when the controllable thin film is resistive or the freestanding thin film is not in contact with the conducting islands. At the end, switching uniplanar-compact PBG (UC-PBG) structures with photoconductive or temperature sensitive material, which is deposited inside of the gaps located in the ground plane, is also described.

    摘要翻译： 光子带隙（PBG）结构用于微波部件作为滤波器以抑制不期望的信号，因为它们具有根据结构尺寸在特定频率范围产生带阻效应的能力。 PBG结构的独特性质是由于介电常数的周期性变化，因此随行进电磁波产生干扰。 这种周期性布置可以存在于电介质基板的内部或微带传输线结构的接地平面内。 本发明提供了可调谐或可切换的平面PBG结构，其包含接地平面内的周期性穿孔的格子图案。 通过沉积由具有可变电导率的可控薄膜层包围的导电岛来实现带阻特性的调谐或切换。 可控薄膜层可以是光导或温度敏感的，其允许通过光照或温度变化发生其导电性的变化。 代替沉积具有可变电导率的可控薄膜，也可以使用诸如MEMS结构的独立薄膜作为导电岛和接地平面之间的介质。 根据本发明，当可控薄膜导电或独立薄膜与导电岛和接地平面接触时，平面PBG结构的阻带特性被切断。 同时，当可控薄膜是电阻性的或独立的薄膜不与导电岛接触时，阻带特性被接通。 最后，还介绍了沉积在位于接地平面中的间隙内的光导或温敏材料的开关单面紧凑型PBG（UC-PBG）结构。

    Methods for roof, wall or floor leak detection
    54.
    发明授权
    Methods for roof, wall or floor leak detection 失效
    屋顶，墙壁或地面泄漏检测方法

    公开(公告)号：US5081422A

    公开(公告)日：1992-01-14

    申请号：US579034

    申请日：1990-09-07

    申请人： Ishiang Shih

    发明人： Ishiang Shih

    IPC分类号： G01M3/16 ,  G08B21/20

    CPC分类号： E04D13/006 ,  G01M3/16 ,  G08B21/20

    摘要： The present invention describes a method to detect leaks in a roof or leaks in basement walls or floors of a building. The detection is achieved by placing a two wire detector in the region to be monitored and measuring the current with a voltage applied across the two wires. The location of the leak is determined by placing several wire detector pairs in a mesh fashion and then scanning the leakage current through each wire pair. A complete detection and scanning system is also described.

    摘要翻译： 本发明描述了一种用于检测屋顶中的泄漏或建筑物的基底墙或地板的泄漏的方法。 通过将两线检测器放置在要监测的区域中并通过施加在两根电线上的电压来测量电流来实现检测。 通过将几根线检测器对以网格方式放置，然后通过每根线对扫描泄漏电流来确定泄漏的位置。 还描述了完整的检测和扫描系统。

    Methods to fabricate thin film transistors and circuits
    55.
    发明授权
    Methods to fabricate thin film transistors and circuits 有权
    制造薄膜晶体管和电路的方法

    公开(公告)号：US06225149B1

    公开(公告)日：2001-05-01

    申请号：US09303743

    申请日：1999-05-03

    申请人： Feng Yuan Gan ,  Ishiang Shih

    发明人： Feng Yuan Gan ,  Ishiang Shih

    IPC分类号： H01L2100

    CPC分类号： H01L29/66765 ,  H01L29/78609

    摘要： A method for fabricating a thin film field effect transistor is described in this invention. The active layer of the thin film transistor (TFT) is formed by a low cost chemical bath deposition method. The fabrication procedure includes deposition of a metal layer on an insulating substrate, patterning of the metal layer to form a metal gate, formation of the di-electric layer, deposition of the active layer and formation of source and drain contacts.

    摘要翻译： 在本发明中描述了制造薄膜场效应晶体管的方法。 薄膜晶体管（TFT）的有源层通过低成本的化学浴沉积方法形成。 制造方法包括在绝缘基板上沉积金属层，图案化金属层以形成金属栅极，形成双电层，沉积有源层以及形成源极和漏极触点。

    Methods and devices to determine the wavelength of a laser beam
    56.
    发明授权
    Methods and devices to determine the wavelength of a laser beam 失效
    确定激光束波长的方法和装置

    公开(公告)号：US5999271A

    公开(公告)日：1999-12-07

    申请号：US88438

    申请日：1998-06-01

    申请人： Ishiang Shih ,  Linh Ngo Phong ,  Shaolin Shi ,  Cindy Xing Qiu

    发明人： Ishiang Shih ,  Linh Ngo Phong ,  Shaolin Shi ,  Cindy Xing Qiu

    IPC分类号： G01J3/51 ,  G01J9/00 ,  G01S7/483 ,  G01N21/25

    CPC分类号： G01J9/00 ,  G01J3/51 ,  G01S7/483 ,  G01J3/0213

    摘要： Methods for wavelength determination of a monochromatic light beam are described. The methods involve a detector unit containing at least one pair of photo detectors. One of the detectors in each detector pair is covered with a variable attenuator and the other is not covered by the variable attenuator. The optical transmission coefficient of the variable attenuator is a monotonic function of wavelength. Under illumination of a monochromatic light, the photocurrents produced in the detectors with and without the variable attenuator are compared. The relative values of the photocurrents are used to determine the wavelength of the monochromatic light.

    摘要翻译： 描述了单色光束的波长确定方法。 该方法涉及包含至少一对光电检测器的检测器单元。 每个检测器对中的一个检测器被可变衰减器覆盖，另一个不被可变衰减器覆盖。 可变衰减器的光透射系数是波长的单调函数。 在单色光的照明下，比较具有和不具有可变衰减器的检测器中产生的光电流。 光电流的相对值用于确定单色光的波长。

    Methods of forming field emission devices with self-aligned gate structure
    57.
    发明授权
    Methods of forming field emission devices with self-aligned gate structure 失效
    用自对准栅极结构形成场发射器件的方法

    公开(公告)号：US5857885A

    公开(公告)日：1999-01-12

    申请号：US743279

    申请日：1996-11-04

    申请人： Philips Laou ,  Ishiang Shih

    发明人： Philips Laou ,  Ishiang Shih

    IPC分类号： H01J9/02

    CPC分类号： H01J9/025

    摘要： Methods of forming a field emission device with self-aligned gate structure, comprising a substrate on which at least one wedge or tip electrode and one accelerating or gate electrode are provided. The only photolithographic step involved is to pattern an integrated gate electrode opening on high quality, thermally grown oxide which can withstand a strong electric field. The formation of the emissive electrode by etching starts at the edge of the integrated gate electrode opening defined by the oxide material layer. As a result, the distance between the emissive electrode and the gate electrode is minimum. Simple wet chemical etching may be used to form the emissive electrode.

    摘要翻译： 形成具有自对准栅极结构的场发射器件的方法，包括其上设置有至少一个楔形或尖端电极和一个加速栅极或栅电极的衬底。 所涉及的唯一的光刻步骤是在能够承受强电场的高质量的热生长氧化物上图案化集成栅电极开口。 通过蚀刻形成发射电极在由氧化物层限定的集成栅电极开口的边缘处开始。 结果，发射电极和栅电极之间的距离是最小的。 可以使用简单的湿化学蚀刻来形成发射电极。