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254 条记录 (耗时 0.049 秒)

    Method of making a nanotube-based shadow random access memory
    54.
    发明授权
    Method of making a nanotube-based shadow random access memory 有权
    制造基于纳米管的阴影随机存取存储器的方法

    公开(公告)号：US07944735B2

    公开(公告)日：2011-05-17

    申请号：US12550975

    申请日：2009-08-31

    申请人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

    发明人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

    IPC分类号： G11C14/00

    CPC分类号： G11C11/412 ,  B82Y10/00 ,  G11C13/025 ,  G11C14/00 ,  G11C23/00 ,  G11C2213/17 ,  H01H1/0094 ,  H01H1/027 ,  H01L27/28 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/73 ,  H01L29/78 ,  H01L51/0048 ,  H01L51/0508 ,  Y10S977/936 ,  Y10S977/938 ,  Y10S977/943 ,  Y10T29/49002

    摘要： Random access memory including nanotube switching elements. A memory cell includes first and second nanotube switching elements and an electronic memory. Each nanotube switching element includes conductive terminals, a nanotube article and control circuitry capable of controllably form and unform an electrically conductive channel between the conductive terminals. The electronic memory is a volatile storage device capable of storing a logic state in response to electrical stimulus. In certain embodiment the electronic memory has cross-coupled first and second inverters in electrical communication with the first and second nanotube switching elements. The cell can operate as a normal electronic memory, or can operate in a shadow memory or store mode (e.g., when power is interrupted) to transfer the electronic memory state to the nanotube switching elements. The device may later be operated in a recall mode where the state of the nanotube switching elements may be transferred to the electronic memory.

    摘要翻译： 随机存取存储器包括纳米管开关元件。 存储单元包括第一和第二纳米管切换元件和电子存储器。 每个纳米管切换元件包括导电端子，纳米管制品和能够可控地形成和取消导电端子之间的导电通道的控制电路。 电子存储器是能够响应于电刺激而存储逻辑状态的易失性存储装置。 在某些实施例中，电子存储器具有与第一和第二纳米管切换元件电连通的交叉耦合的第一和第二反相器。 电池可以作为普通电子存储器工作，或者可以在阴影存储器或存储模式（例如，当电力中断时）操作以将电子存储器状态传送到纳米管开关元件。 该装置可以稍后在调谐模式下操作，其中纳米管切换元件的状态可以被传送到电子存储器。

    Nanotube-based switching element
    56.
    发明授权
    Nanotube-based switching element 有权
    基于纳米管的开关元件

    公开(公告)号：US07652337B2

    公开(公告)日：2010-01-26

    申请号：US11542524

    申请日：2006-10-03

    申请人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

    发明人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

    IPC分类号： H01L29/76

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  H01H1/0094 ,  H01H2001/0005 ,  H01L27/28 ,  H01L29/0673 ,  H01L29/73 ,  H01L29/78 ,  H01L51/0048 ,  H01L51/0508 ,  Y10S977/708 ,  Y10S977/762

    摘要： Nanotube-based switching elements and logic circuits. Under one aspect, a switching element includes an input node; an output node; a nanotube channel element comprising a ribbon of nanotube fabric; and a control electrode disposed in relation to the nanotube channel element to form an electrically conductive channel between the input node and the output node, wherein the electrically conductive channel at least includes the nanotube channel element. Under another aspect, a switching element includes an input node; an output node; a nanotube channel element comprising at least one electrically conductive nanotube, the nanotube being clamped at both ends by a clamping structure; and a control electrode disposed in relation to the nanotube channel element to form an electrically conductive channel between the input node and the output node, wherein the electrically conductive channel at least includes the nanotube channel element.

    摘要翻译： 基于纳米管的开关元件和逻辑电路。 在一个方面，开关元件包括输入节点; 输出节点; 包括纳米管织物带的纳米管通道元件; 以及控制电极，其相对于所述纳米管通道元件设置，以在所述输入节点和所述输出节点之间形成导电通道，其中所述导电通道至少包括所述纳米管通道元件。 另一方面，开关元件包括输入节点; 输出节点; 包括至少一个导电纳米管的纳米管通道元件，所述纳米管通过夹持结构夹在两端; 以及控制电极，其相对于所述纳米管通道元件设置，以在所述输入节点和所述输出节点之间形成导电通道，其中所述导电通道至少包括所述纳米管通道元件。

    Electromechanical three-trace junction devices
    57.
    发明授权
    Electromechanical three-trace junction devices 有权
    机电三迹交界器件

    公开(公告)号：US07521736B2

    公开(公告)日：2009-04-21

    申请号：US11454216

    申请日：2006-06-15

    申请人： Thomas Rueckes ,  Brent M. Segal ,  Claude L. Bertin

    发明人： Thomas Rueckes ,  Brent M. Segal ,  Claude L. Bertin

    IPC分类号： H01L29/00

    CPC分类号： G11C11/56 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/77 ,  H01H1/0094 ,  Y10S977/742 ,  Y10S977/932 ,  Y10S977/936 ,  Y10S977/943

    摘要： Three-trace electromechanical devices and methods of using same are described. The device of the present invention includes first and second electrically conductive elements with a nanotube ribbon (or other electromechanical elements) disposed therebetween. The nanotube ribbon is capable of maintaining its position after removing an electrical stimulus applied to at least one of the first and second electrically conductive elements. Such devices may be formed into arrays of cells. One of the conductive elements may be used to create an attractive force to cause the nanotube ribbon to contact a conductive element, and the other conductive element may be used to create an attractive force to pull the nanotube ribbon from contact with the contacted conductive element. The electrically conductive traces may be aligned or unaligned with one another.

    摘要翻译： 描述了三轨机电装置及其使用方法。 本发明的器件包括第一和第二导电元件，其间设置有纳米管带（或其他机电元件）。 在除去施加到第一和第二导电元件中的至少一个的电刺激之后，纳米管带能够保持其位置。 这样的器件可以形成为单元阵列。 可以使用导电元件之一来产生引导纳米管带与导电元件接触的吸引力，并且另一个导电元件可用于产生吸引力以将纳米管带拉离与接触的导电元件接触。 导电迹线可以彼此对准或不对准。

    Nanotube-based switching elements with multiple controls
    58.
    发明授权
    Nanotube-based switching elements with multiple controls 有权
    基于纳米管的开关元件具有多个控制

    公开(公告)号：US07339401B2

    公开(公告)日：2008-03-04

    申请号：US11197196

    申请日：2005-08-04

    申请人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

    发明人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

    IPC分类号： H03K19/20

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/17 ,  H01H1/0094 ,  H01H1/027 ,  H01L27/28 ,  H01L29/0673 ,  H01L29/73 ,  H01L29/78 ,  H01L51/0048 ,  H01L51/0508 ,  Y10S977/708 ,  Y10S977/932 ,  Y10S977/936 ,  Y10S977/938 ,  Y10S977/94 ,  Y10S977/943

    摘要： Nanotube-based switching elements with multiple controls and circuits made from such. A switching element includes an input node, an output node, and a nanotube channel element having at least one electrically conductive nanotube. A control structure is disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said input node and said output node. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. The control structure includes a control electrode and a release electrode, disposed on opposite sides of the nanotube channel element. The control and release may be used to form a differential input, or if the device is constructed appropriately to operate the circuit in a non-volatile manner. The switching elements may be arranged into logic circuits and latches having differential inputs and/or non-volatile behavior depending on the construction.

    摘要翻译： 基于纳米管的开关元件具有由此制成的多个控制和电路。 开关元件包括输入节点，输出节点和具有至少一个导电纳米管的纳米管通道元件。 相对于纳米管通道元件设置控制结构，以可控地形成和取消所述输入节点和所述输出节点之间的导电通道。 输出节点的构造和布置使得通道形成基本上不受输出节点的电气状态的影响。 控制结构包括设置在纳米管通道元件的相对侧上的控制电极和释放电极。 控制和释放可用于形成差分输入，或者如果该装置被适当地构造以以非易失性方式操作电路。 根据结构，开关元件可以被布置成具有差分输入和/或非易失性行为的逻辑电路和锁存器。

    Field effect devices having a gate controlled via a nanotube switching element
    59.
    发明授权
    Field effect devices having a gate controlled via a nanotube switching element 有权
    具有通过纳米管开关元件控制的栅极的场效应器件

    公开(公告)号：US07211854B2

    公开(公告)日：2007-05-01

    申请号：US10864682

    申请日：2004-06-09

    申请人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

    发明人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

    IPC分类号： H01L29/78

    CPC分类号： H01L29/78 ,  B82Y10/00 ,  B82Y99/00 ,  G11C7/065 ,  G11C13/025 ,  G11C16/0416 ,  G11C17/16 ,  G11C17/165 ,  G11C23/00 ,  G11C2213/16 ,  G11C2213/17 ,  G11C2213/79 ,  H01H1/0094 ,  H01L27/10 ,  H01L27/1052 ,  H01L27/112 ,  H01L27/11206 ,  H01L27/115 ,  H01L27/286 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/42324 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0508 ,  Y10S977/708 ,  Y10S977/724 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/936 ,  Y10S977/938 ,  Y10S977/94 ,  Y10S977/943

    摘要： Field effect devices having a gate controlled via a nanotube switching element. Under one embodiment, a non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a respective terminal. A channel region of a second semiconductor type of material is disposed between the source and drain region. A gate structure is disposed over an insulator over the channel region and has a corresponding terminal. A nanotube switching element is responsive to a first control terminal and a second control terminal and is electrically positioned in series between the gate structure and the terminal corresponding to the gate structure. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the gate structure and its corresponding terminal. When the nanotube switching element is in the closed state, the channel conductivity and operation of the device is responsive to electrical stimulus at the terminals corresponding to the source and drain regions and the gate structure.

    摘要翻译： 具有通过纳米管开关元件控制的栅极的场效应器件。 在一个实施例中，非易失性晶体管器件包括第一半导体类型的材料的源极区域和漏极区域，并且各自与相应的端子电连通。 第二半导体类型的材料的沟道区域设置在源区和漏区之间。 栅极结构设置在沟道区域上方的绝缘体上并具有对应的端子。 纳米管开关元件响应于第一控制端子和第二控制端子，并且电连接地定位在栅极结构和对应于栅极结构的端子之间。 纳米管开关元件在机械上可操作地处于打开和关闭状态之一，从而打开或关闭栅极结构及其对应端子之间的电连通路径。 当纳米管开关元件处于闭合状态时，器件的沟道导电性和操作响应于对应于源极和漏极区域以及栅极结构的端子处的电刺激。

    Nanotube device structure and methods of fabrication
    60.
    发明授权
    Nanotube device structure and methods of fabrication 有权
    纳米管器件结构及其制造方法

    公开(公告)号：US07071023B2

    公开(公告)日：2006-07-04

    申请号：US10918181

    申请日：2004-08-13

    申请人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

    发明人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

    IPC分类号： H01L51/40 ,  H01L21/335 ,  H03H9/00

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  H01H1/0094 ,  H01H1/027 ,  H01H2001/0005 ,  H01L27/28 ,  H01L29/0673 ,  H01L29/73 ,  H01L29/78 ,  H01L51/0048 ,  H01L51/0508 ,  Y10S977/725 ,  Y10S977/733 ,  Y10S977/755 ,  Y10S977/938 ,  Y10T29/49105

    摘要： Nanotube device structures and methods of fabrication. Under one embodiment, a method of forming a nanotube switching element includes forming a first structure having at least one output electrode, forming a conductive article having at least one nanotube, and forming a second structure having at least one output electrode and positioning said second structure in relation to the first structure and the conductive article such that the output electrode of the first structure is opposite the output electrode of the second structure and such that a portion of the conductive article is positioned therebetween. At least one signal electrode is provided in electrical communication with the conductive article having at least one nanotube, and at least one control electrode is provided in relation to the conductive article such that the conductive electrode may control the conductive article to form a channel between the signal electrode and at least one of the output electrodes. The first and second structures each include a respective second output electrode and wherein the second electrodes are positioned opposite each other with the conductive article positioned therebetween. The control electrode and the second control electrode includes an insulator layer on a surface facing the conductive article.

    摘要翻译： 纳米管器件结构和制造方法。 在一个实施例中，形成纳米管切换元件的方法包括形成具有至少一个输出电极的第一结构，形成具有至少一个纳米管的导电制品，并形成具有至少一个输出电极的第二结构，并且将所述第二结构 相对于第一结构和导电制品，使得第一结构的输出电极与第二结构的输出电极相对，并且导电制品的一部分位于它们之间。 提供至少一个信号电极与具有至少一个纳米管的导电制品电连通，并且相对于导电制品提供至少一个控制电极，使得导电电极可以控制导电制品以在导电制品之间形成通道 信号电极和至少一个输出电极。 第一和第二结构各自包括相应的第二输出电极，并且其中第二电极彼此相对定位，导电制品位于它们之间。 控制电极和第二控制电极在面向导电物品的表面上包括绝缘体层。